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1. 发明申请

WO2003023094A1 酸化物高温超伝導体およびその作製方法审中-公开
标题翻译：氧化物高温超导体及其生产方法
公开(公告)号：WO2003023094A1
公开(公告)日：2003-03-20
申请号：PCT/JP2002/009049
申请日：2002-09-05
申请人：伊原良子 , 伊原英世 , 伊原英宇 , 伊原玄英 , 伊原智哲 , アシナラヤナンスンダレサン
发明人：アシナラヤナンスンダレサン
IPC分类号： C30B29/22
CPC分类号： H01L39/2461 , C30B23/02 , C30B29/22 , C30B29/225 , H01L39/2458 , Y10S505/782 , Y10S505/783
摘要： An oxide high-temperature superconductor in which an oxide high-temperature superconductive thin film high in crystal perfection and excellent in crystal orientation is formed on a crystal substrate of low dielectric constant and its production method are disclosed. When an oxide high-temperature superconductor in which an oxide high-temperature superconductive thin film containing Ba as a constituent element is formed on a sapphire R-face 1, -1, 0, 2 substrate is produced, a first buffer layer made of CeO3 for relaxing the lattice mismatching between the sapphire R-face 1, -1, 0, 2 substrate and the oxide high-temperature superconductive thin film is formed on the the sapphire R-face 1, -1, 0, 2 substrate, a second buffer layer in which Ba of the oxide high-temperature superconductor is replaced with Sr is formed on the first buffer layer, and an oxide high-temperature superconductive thin film is epitaxially grown on the second buffer layer. Even if the material of the firt buffer layer for relaxing the lattice mismatching of the oxide high-temperature superconductive thin film tends to cause an interface reaction with Ba in the oxide high-temperature superconductive thin film, the second buffer layer prevents the interface reaction, thereby epitaxially growing an oxide high-temperature superconductive thin film excellent in crystal perfection and crystal orientation.
摘要翻译：公开了一种氧化物高温超导体，其中在低介电常数的晶体基板上形成晶体完整且晶体取向优异的氧化物高温超导薄膜及其制造方法。当在蓝宝石R面1，...，0,2衬底上形成含有Ba作为构成元素的氧化物高温超导薄膜的氧化物高温超导体时，由CeO 3制成的第一缓冲层为了缓和在蓝宝石R面1，...，0,2衬底上形成蓝宝石R面1，...，2，2衬底和氧化物高温超导薄膜之间的晶格不匹配，第二个在第一缓冲层上形成氧化物高温超导体的Ba替代为Sr的缓冲层，在第二缓冲层上外延生长氧化物高温超导薄膜。即使用于缓和氧化物高温超导薄膜的晶格失配的缓冲层的材料也容易在氧化物高温超导薄膜中引起与Ba的界面反应，所以第二缓冲层防止界面反应，从而外延生长晶体完整性和晶体取向优异的氧化物高温超导薄膜。

2. 发明申请

WO2002103815A1 ナノドットを利用した柱状ピン止め中心を有する超伝導薄膜及びその製造方法审中-公开
标题翻译：使用纳米光束制造具有柱状引线保持中心的薄膜
公开(公告)号：WO2002103815A1
公开(公告)日：2002-12-27
申请号：PCT/JP2002/006007
申请日：2002-06-17
申请人：伊原良子 , 伊原英世 , 伊原英宇 , 伊原玄英 , 伊原智哲 , クリシャンユアン・アンドリアン
发明人：クリシャンユアン・アンドリアン
IPC分类号： H01L39/02
CPC分类号： H01L39/2483 , Y10T428/24612
摘要： A superconducting thin film having a columnar pin retaining center using nano−dots, comprising three−dimension−shaped nano−dots (3) formed in an insular form on a substrate (2) and consisting of a material other than that of the substrate and a superconducting substance, columnar defects (4) grown on the nano−dots (3) and consisting of a superconducting substance, lattice defects (6) formed in the columnar defects, and a superconducting thin film (5) formed on portions other than columnar defect portions of the substrate, wherein a substance other than a superconducting substance is deposited and aggregated with the temperature and film thickness of the substrate (2) controlled to form nano−dots (3), and a superconducting thin film (5) is grown and formed on the substrate (2). A superconducting thin film having a critical current density at least 10 times higher is implemented regardless of types of superconducting thin films and can be produced at lower costs, thereby providing a superconducting thin film suitably applied to such technical fields as cryoelectronics and microwave and being large in critical superconducting current density and critical superconducting magnetic field.
摘要翻译：一种具有使用纳米点的柱状销保持中心的超导薄膜，包括在基板（2）上以岛状形成并且由除基板之外的材料构成的三维形状的纳米点（3）超导物质，在纳米点（3）上生长并由超导物质形成的柱状缺陷（4），形成在柱状缺陷中的晶格缺陷（6）和形成在柱状以外的部分上的超导薄膜（5）基板的缺陷部分，其中除了超导物质之外的物质被沉积并且被控制成形成纳米点的基板（2）的温度和膜厚度（3），并且生长超导薄膜（5）并形成在基板（2）上。实现了具有至少10倍以上的临界电流密度的超导薄膜，而不管类型的超导薄膜，并且可以以较低的成本生产，从而提供适用于诸如低温电子和微波等技术领域的超导薄膜在临界超导电流密度和临界超导磁场中。

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