专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2012094454A2 HAZARDOUS WASTE SANITATION AND REMOVAL DEVICE, METHODS OF USE AND APPLICATIONS THEREOF 审中-公开
标题翻译：危险废物卫生和移除装置，其使用方法及其应用
公开(公告)号：WO2012094454A2
公开(公告)日：2012-07-12
申请号：PCT/US2012/020273
申请日：2012-01-05
申请人： TRINOVA MEDICAL WASTE SOLUTIONS, LLC
发明人： BARBERI, Steven , JAKOBI, Felix, J. , BENNETTT, James, F. , WEBBER, Leslie, G. , BARBERI, Louis, J. , RADONSKI, Tadeusz, J. , ENGLRAM, Paul, B. , KILHAM, Keith
IPC分类号： B02C19/00 , F26B5/14
CPC分类号： B30B9/12 , A61L2/183 , A61L2/186 , A61L11/00 , B01D33/03 , B01D36/008 , B02C19/0075 , B02C23/10 , B09B3/00 , B09B3/0075
摘要： Hazardous waste sanitation and removal devices are described that include: a) a unitary shredder system, b) a transport system, a pre-treatment system or a combination thereof, comprising a reciprocating operation system, c) a treatment system, d) a dewatering system, a desolutionizing system or a combination thereof, and e) a collection system for disposal. Methods of sanitizing hazardous waste material are described and include: a) providing a unitary shredder system, b) providing a transport system, a pre-treatment system or a combination thereof, comprising a reciprocating operation system, c) providing a treatment system, d) providing a dewatering system, a desolutionizing system or a combination thereof, e) providing a collection system for disposal, f) providing a hazardous waste material, g) introducing the hazardous waste material into the shredder system to produce a shredded waste material, h) transporting the shredded waste material to the treatment system utilizing the transport system, the pre-treatment system or a combination thereof, wherein the treatment system, the pre-treatment system or the combination thereof comprises a reciprocating operation system, i) treating the shredded waste material to produce a shredded treated material, j) dewatering or desolutionizing the shredded treated material, and k) collecting the shredded treated material in the collection system. Dewatering processes are also disclosed that includes at least one collection of wastes, at least one screw press, at least one conveyor system that carries the at least one collection of wastes after interaction with the at least one screw press, and at least one filter system.
摘要翻译：描述了危险废物卫生和清除装置，其包括：a）整体粉碎系统，b）运输系统，预处理系统或其组合，包括往复运动系统，c）处理系统，d）脱水系统，脱气系统或其组合，以及e）用于处理的收集系统。描述了消毒危险废物的方法，包括：a）提供整体粉碎系统，b）提供运输系统，预处理系统或其组合，包括往复运动系统，c）提供处理系统d 提供脱水系统，脱气系统或其组合，e）提供用于处置的收集系统，f）提供危险废物，g）将危险废物引入粉碎系统以产生粉碎的废料，h ）使用运输系统，预处理系统或其组合将切碎的废料运输到处理系统，其中处理系统，预处理系统或其组合包括往复操作系统，i）处理切碎的废料，以生产切碎的处理材料，j）将切碎的处理过的材料脱水或去真空，并且k）收集该树脂收集系统中处理过的材料。还公开了脱水方法，其包括至少一个废物集合，至少一个螺旋压榨机，至少一个输送系统，其在与所述至少一个螺旋压榨机相互作用之后承载所述至少一个废物集合，以及至少一个过滤系统。

2. 发明申请

WO2007027670A1 THERMAL INTERFACE MATERIALS, METHODS OF PREPARATION THEREOF AND THEIR APPLICATIONS 审中-公开
标题翻译：热界面材料及其制备方法及其应用
公开(公告)号：WO2007027670A1
公开(公告)日：2007-03-08
申请号：PCT/US2006/033661
申请日：2006-08-28
申请人： HONEYWELL INTERNATIONAL INC. , RUCHERT, Brian , FLINT, James Patrick , TOWNSEND, Richard
发明人： RUCHERT, Brian , FLINT, James Patrick , TOWNSEND, Richard
IPC分类号： H01L23/427
CPC分类号： H01L23/4275 , F28F2013/006 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： Thermal interface materials are described herein that include at least one phase change material, and at least one solvent, solvent mixture or combination thereof, wherein the at least one solvent, solvent mixture or combination thereof at least partially solvates the at least one phase change material. Methods of producing thermal interface materials are also described that include providing at least one phase change material; providing at least one solvent, solvent mixture or combination thereof, wherein the at least one solvent, solvent mixture or combination thereof at least partially solvates the at least one phase change material; and physically coupling the at least one phase change material and the at least one solvent, solvent mixture or combination thereof.
摘要翻译：本文描述了热界面材料，其包括至少一种相变材料和至少一种溶剂，溶剂混合物或其组合，其中所述至少一种溶剂，溶剂混合物或其组合至少部分地溶解所述至少一种相变材料。还描述了生产热界面材料的方法，其包括提供至少一种相变材料; 提供至少一种溶剂，溶剂混合物或其组合，其中所述至少一种溶剂，溶剂混合物或其组合至少部分地溶解所述至少一种相变材料; 并物理耦合所述至少一种相变材料和所述至少一种溶剂，溶剂混合物或其组合。

3. 发明申请

WO2006115476A2 NOVEL RUTHENIUM-BASED MATERIALS AND RUTHENIUM ALLOYS, THEIR USE IN VAPOR DEPOSITION OR ATOMIC LAYER DEPOSITION AND FILMS PRODUCED THEREFROM 审中-公开
标题翻译：新型的基于钌的材料和钌合金，它们在蒸发沉积或原子层沉积中的应用及其生产的膜
公开(公告)号：WO2006115476A2
公开(公告)日：2006-11-02
申请号：PCT/US2005/013663
申请日：2005-04-21
申请人： HONEYWELL INTERNATIONAL INC. , LEE, Eal , TRUONG, Nicole , PRATER, Robert , MORALES, Diana
发明人： LEE, Eal , TRUONG, Nicole , PRATER, Robert , MORALES, Diana
IPC分类号： C22C5/04
CPC分类号： C22C5/04 , B32B15/018 , C23C14/0036 , C23C14/0641 , C23C14/165 , C23C14/3414 , C23C14/58 , H01L21/28079 , H01L21/28088 , H01L21/2855 , H01L21/76843 , H01L21/76846 , H01L21/76873 , H01L29/495 , H01L29/4966 , H01L2924/0002 , Y10T428/1266 , Y10T428/12806 , Y10T428/12819 , Y10T428/12826 , Y10T428/1284 , H01L2924/00
摘要： An alloy for use in vapor deposition or atomic layer deposition is described herein that includes ruthenium and at least one element from group IV, V or VI of the Periodic Chart of the Elements or a combination thereof. In addition, a layered material is described herein that comprises at least one layer that includes a ruthenium-based material or ruthenium-based alloy and at least one layer that includes at least one element from group IV, V or VI of the Periodic Chart of the Elements or a combination thereof.
摘要翻译：本文描述了用于气相沉积或原子层沉积的合金，其包括钌和元素周期图的IV，V或VI族中的至少一种元素或其组合。此外，本文描述的层状材料包括至少一层包括钌基材料或钌基合金的层，以及至少一层，其包括至少一种元素周期表IV，V或VI族元素元素或其组合。

4. 发明申请

WO2006031250A2 SELECTIVE HIGH DIELECTRIC CONSTANT MATERIAL ETCHANT 审中-公开
标题翻译：选择性高介电常数材料
公开(公告)号：WO2006031250A2
公开(公告)日：2006-03-23
申请号：PCT/US2005/009172
申请日：2005-03-18
申请人： HONEYWELL INTERNATIONAL INC. , STARZYNSKI, John
发明人： STARZYNSKI, John
IPC分类号： C03C15/00 , B44C1/22 , C09K13/04
CPC分类号： H01L21/31111 , C09K13/08
摘要： Etchants for selective removal of high dielectric constant materials are described herein that comprise at least one fluorin-based constituent; water and at least one solvent or solvent mixture. Methods are also described herein for producing a wet etching chemistry solution that include providing at least one fluorine-based constituent, providing water, providing at least one solvent mixture, and combining the fluorine-based constituent and water into the least one solvent or solvent mixture to form the wet etching chemistry solution.
摘要翻译：本文描述了选择性去除高介电常数材料的蚀刻剂，其包含至少一种基于氟的成分; 水和至少一种溶剂或溶剂混合物。本文还描述了用于生产湿蚀刻化学溶液的方法，其包括提供至少一种氟基组分，提供水，提供至少一种溶剂混合物，并将氟基组分和水混合到至少一种溶剂或溶剂混合物以形成湿蚀刻化学溶液。

5. 发明申请

WO2006054996A1 SELECTIVE REMOVAL CHEMISTRIES FOR SEMICONDUCTOR APPLICATIONS, METHODS OF PRODUCTION AND USES THEREOF 审中-公开
标题翻译：用于半导体应用的选择性去除化学品，其生产方法及其用途
公开(公告)号：WO2006054996A1
公开(公告)日：2006-05-26
申请号：PCT/US2004/038761
申请日：2004-11-19
申请人： HONEYWELL INTERNATIONAL INC. , YELLOWAGA, Deborah, L. , PALMER, Ben , STARZYNSKI, John, S. , MCFARLAND, John, A.
发明人： YELLOWAGA, Deborah, L. , PALMER, Ben , STARZYNSKI, John, S. , MCFARLAND, John, A.
IPC分类号： C09K13/06
CPC分类号： C09K13/08 , C11D1/004 , C11D3/042 , C11D7/08 , C11D7/50 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/31111 , H01L21/31133
摘要： Removal chemistry solutions are described herein that include at least one low H 2 O content fluorine-based constituent and at least one solvent or solvent mixture. Removal chemistry solutions also include: hydrogen fluoride gas, and at least one solvent or solvent mixture. Methods are described herein for producing removal chemistry solutions that include providing at least one gaseous low H 2 O content fluorine-based constituent, providing at least one solvent or solvent mixture, and bubbling the at least one low H 2 O content fluorine-based constituent into the at least one solvent or solvent mixture to form the removal chemistry solution. Methods for producing removal chemistry solutions are also described that include: providing at least one low H 2 O content fluorine-based constituent, providing at least one solvent or solvent mixture, and blending the at least one low H 2 O content fluorine-based constituent into the at least one solvent or solvent mixture to form the removal chemistry solution. Additional methods of forming a removal chemistry solution include: providing at least one gaseous anhydrous fluorine-based constituent, providing at least one solvent or solvent mixture, and bubbling the at least one anhydrous fluorine-based constituent into the at least one solvent or solvent mixture to form the solution. Also, methods of forming a removal chemistry solution, as described herein include: providing hydrogen fluoride gas, providing at least one solvent or solvent mixture, and bubbling the hydrogen fluoride gas into the at least one solvent or solvent mixture to form the solution.
摘要翻译：本文描述了除去化学溶液，其包括至少一种低H 2 O 2含量的氟基组分和至少一种溶剂或溶剂混合物。去除化学溶液还包括：氟化氢气体和至少一种溶剂或溶剂混合物。本文描述了用于产生除去化学溶液的方法，其包括提供至少一种低含量H 2 O 2的低含量气态成分，提供至少一种溶剂或溶剂混合物，并鼓泡至少一种低H 将含O 2的含氟基成分加入到至少一种溶剂或溶剂混合物中以形成去除化学溶液。还描述了用于产生除去化学溶液的方法，其包括：提供至少一种低H 2 O 2含量的氟基组分，提供至少一种溶剂或溶剂混合物，并将至少一种低H 将含O 2的含氟基成分加入到至少一种溶剂或溶剂混合物中以形成去除化学溶液。形成去除化学溶液的其它方法包括：提供至少一种无水氟化基的气态成分，提供至少一种溶剂或溶剂混合物，并将至少一种无水氟基成分鼓泡到至少一种溶剂或溶剂混合物中形成解决方案。此外，如本文所述形成去除化学溶液的方法包括：提供氟化氢气体，提供至少一种溶剂或溶剂混合物，并将氟化氢气体鼓泡到至少一种溶剂或溶剂混合物中以形成溶液。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式