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1. 发明申请

WO2006054996A1 SELECTIVE REMOVAL CHEMISTRIES FOR SEMICONDUCTOR APPLICATIONS, METHODS OF PRODUCTION AND USES THEREOF 审中-公开
标题翻译：用于半导体应用的选择性去除化学品，其生产方法及其用途
公开(公告)号：WO2006054996A1
公开(公告)日：2006-05-26
申请号：PCT/US2004/038761
申请日：2004-11-19
申请人： HONEYWELL INTERNATIONAL INC. , YELLOWAGA, Deborah, L. , PALMER, Ben , STARZYNSKI, John, S. , MCFARLAND, John, A.
发明人： YELLOWAGA, Deborah, L. , PALMER, Ben , STARZYNSKI, John, S. , MCFARLAND, John, A.
IPC分类号： C09K13/06
CPC分类号： C09K13/08 , C11D1/004 , C11D3/042 , C11D7/08 , C11D7/50 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/31111 , H01L21/31133
摘要： Removal chemistry solutions are described herein that include at least one low H 2 O content fluorine-based constituent and at least one solvent or solvent mixture. Removal chemistry solutions also include: hydrogen fluoride gas, and at least one solvent or solvent mixture. Methods are described herein for producing removal chemistry solutions that include providing at least one gaseous low H 2 O content fluorine-based constituent, providing at least one solvent or solvent mixture, and bubbling the at least one low H 2 O content fluorine-based constituent into the at least one solvent or solvent mixture to form the removal chemistry solution. Methods for producing removal chemistry solutions are also described that include: providing at least one low H 2 O content fluorine-based constituent, providing at least one solvent or solvent mixture, and blending the at least one low H 2 O content fluorine-based constituent into the at least one solvent or solvent mixture to form the removal chemistry solution. Additional methods of forming a removal chemistry solution include: providing at least one gaseous anhydrous fluorine-based constituent, providing at least one solvent or solvent mixture, and bubbling the at least one anhydrous fluorine-based constituent into the at least one solvent or solvent mixture to form the solution. Also, methods of forming a removal chemistry solution, as described herein include: providing hydrogen fluoride gas, providing at least one solvent or solvent mixture, and bubbling the hydrogen fluoride gas into the at least one solvent or solvent mixture to form the solution.
摘要翻译：本文描述了除去化学溶液，其包括至少一种低H 2 O 2含量的氟基组分和至少一种溶剂或溶剂混合物。去除化学溶液还包括：氟化氢气体和至少一种溶剂或溶剂混合物。本文描述了用于产生除去化学溶液的方法，其包括提供至少一种低含量H 2 O 2的低含量气态成分，提供至少一种溶剂或溶剂混合物，并鼓泡至少一种低H 将含O 2的含氟基成分加入到至少一种溶剂或溶剂混合物中以形成去除化学溶液。还描述了用于产生除去化学溶液的方法，其包括：提供至少一种低H 2 O 2含量的氟基组分，提供至少一种溶剂或溶剂混合物，并将至少一种低H 将含O 2的含氟基成分加入到至少一种溶剂或溶剂混合物中以形成去除化学溶液。形成去除化学溶液的其它方法包括：提供至少一种无水氟化基的气态成分，提供至少一种溶剂或溶剂混合物，并将至少一种无水氟基成分鼓泡到至少一种溶剂或溶剂混合物中形成解决方案。此外，如本文所述形成去除化学溶液的方法包括：提供氟化氢气体，提供至少一种溶剂或溶剂混合物，并将氟化氢气体鼓泡到至少一种溶剂或溶剂混合物中以形成溶液。

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