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1. 发明申请

WO2018063826A1 CIRCUIT BOARD WITH MULTIPLE DENSITY REGIONS 审中-公开
标题翻译：多密度区域的电路板
公开(公告)号：WO2018063826A1
公开(公告)日：2018-04-05
申请号：PCT/US2017/051831
申请日：2017-09-15
申请人： ADVANCED MICRO DEVICES, INC.
发明人： MCLELLAN, Robert
IPC分类号： H01L23/538
摘要： Various circuit boards and methods of fabricating and using the same are disclosed. In one aspect, a system (10) is provided that includes a circuit board (15) that has a first region (55) including a first group of circuit structures adapted to interconnect two or more semiconductor chips (25, 30) and arranged according to a first design rule of a first density. A second region (60) is external to the first region and includes a second group of circuit structures arranged according to a second design rule of a second density lower than the first density.
摘要翻译：公开了各种电路板及其制造和使用方法。在一个方面，提供了一种包括电路板（15）的系统（10），所述电路板具有包括第一组电路结构的第一区域（55），所述第一组电路结构适于互连两个或更多个半导体芯片（25,30）到第一密度的第一设计规则。第二区域（60）在第一区域的外部，并且包括根据低于第一密度的第二密度的第二设计规则布置的第二组电路结构。

2. 发明申请

WO2014074327A3 ADAPTIVE CONNECTED STANDBY FOR A COMPUTING DEVICE 审中-公开
公开(公告)号：WO2014074327A3
公开(公告)日：2014-05-15
申请号：PCT/US2013/066800
申请日：2013-10-25
申请人： ADVANCED MICRO DEVICES, INC.
发明人： SADOWSKI, Greg , BRANOVER, Alexander , STEINMAN, Maurice
IPC分类号： G06F1/32
摘要： Various computing devices and methods of managing the power consumption thereby are disclosed. In one aspect, a method of managing power consumption of a computing device (10) that has a battery (30) is provided. The method includes cycling the computing device (10) between a connected standby active state and a connected standby idle state. The duration of the connected standby idle state is set based at least in part on a charge level of the battery (30).

3. 发明申请

WO2012094145A1 CONTROL PANEL AND RING INTERFACE FOR COMPUTING SYSTEMS 审中-公开
标题翻译：用于计算系统的控制面板和环接口
公开(公告)号：WO2012094145A1
公开(公告)日：2012-07-12
申请号：PCT/US2011/066075
申请日：2011-12-20
申请人： ADVANCED MICRO DEVICES, INC. , HERZ, William , GOERTZ, Charles , GREENFIELD, Susan
发明人： HERZ, William , GOERTZ, Charles , GREENFIELD, Susan
IPC分类号： H04N5/445 , G06F3/048
CPC分类号： H04N21/4312 , G06F3/0482 , H04N5/44513 , H04N2005/44517
摘要： In a system (10) including a display (20) and a selection device, a method of providing and selecting multiple control panels (505, 605) on the display (20) includes providing a user interface on the display (20). The user interface includes an object that has an axis (510) and is user-scrollable about the axis (510) to selectively bring each of the multiple control panels (505, 605) into and out of view.
摘要翻译：在包括显示器（20）和选择装置的系统（10）中，在显示器（20）上提供和选择多个控制面板（505,605）的方法包括在显示器（20）上提供用户界面。用户界面包括具有轴（510）并且可以围绕轴（510）进行用户可滚动的对象，以选择性地使多个控制面板（505,605）中的每一个进入和离开视野。

4. 发明申请

WO2012034064A1 SEMICONDUCTOR CHIP DEVICE WITH UNDERFILL 审中-公开
标题翻译：半导体芯片设备
公开(公告)号：WO2012034064A1
公开(公告)日：2012-03-15
申请号：PCT/US2011/051075
申请日：2011-09-09
申请人： ADVANCED MICRO DEVICES, INC. , ATI TECHNOLOGIES ULC , SU, Michael, Z. , FU, Lei , REFAI-AHMED, Gamal , BLACK, Bryan
发明人： SU, Michael, Z. , FU, Lei , REFAI-AHMED, Gamal , BLACK, Bryan
IPC分类号： H01L21/56
CPC分类号： H01L21/563 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/0655 , H01L25/50 , H01L2224/13025 , H01L2224/16146 , H01L2224/16235 , H01L2224/17181 , H01L2224/26145 , H01L2224/26175 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/81815 , H01L2224/92125 , H01L2224/94 , H01L2924/10252 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1431 , H01L2924/1433 , H01L2924/1434 , H01L2924/15159 , H01L2924/15311 , H01L2224/16225 , H01L2924/00 , H01L2224/81
摘要： A method of manufacturing is provided that includes placing a removable cover (195, 195 ', 195 ") on a surface (215) of a substrate (120). The substrate includes a first semiconductor chip (1 10) positioned on the surface. The first semiconductor chip includes a first sidewall (170). The removable cover includes a second sidewall (200) positioned opposite the first sidewall. A first underfill (155) is placed between the first semiconductor chip and the surface wherein the second sidewall provides a barrier to flow of the first underfill. Various apparatus are also disclosed.
摘要翻译：提供了一种制造方法，其包括将可移除的盖子（195,195'，195“）放置在基板（120）的表面（215）上。该基板包括位于表面上的第一半导体芯片（110）。第一半导体芯片包括第一侧壁（170），可移除的盖包括与第一侧壁相对设置的第二侧壁（200），第一底部填充物（155）被放置在第一半导体芯片和表面之间，其中第二侧壁提供第一底部填充物的流动障碍。还公开了各种装置。

5. 发明申请

WO2011084362A2 SEMICONDUCTOR CHIP DEVICE WITH SOLDER DIFFUSION PROTECTION 审中-公开
标题翻译：具有焊接扩展保护功能的半导体芯片器件
公开(公告)号：WO2011084362A2
公开(公告)日：2011-07-14
申请号：PCT/US2010/059981
申请日：2010-12-11
申请人： ADVANCED MICRO DEVICES, INC. , SU, Michael, Z.
发明人： SU, Michael, Z.
IPC分类号： H01L25/065
CPC分类号： H01L25/0657 , H01L21/54 , H01L23/055 , H01L23/3185 , H01L23/3737 , H01L23/42 , H01L23/433 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L2224/131 , H01L2224/16 , H01L2224/16225 , H01L2224/26175 , H01L2224/2747 , H01L2224/29011 , H01L2224/29023 , H01L2224/29101 , H01L2224/29105 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/29164 , H01L2224/29169 , H01L2224/2919 , H01L2224/29298 , H01L2224/321 , H01L2224/73103 , H01L2224/73203 , H01L2224/81801 , H01L2224/83191 , H01L2224/83192 , H01L2224/83801 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06589 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01057 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1517 , H01L2924/15311 , H01L2924/1579 , H01L2924/16152 , H01L2924/00014 , H01L2924/01014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2924/00 , H01L2924/00012
摘要： Various methods and apparatus for establishing thermal pathways for a semiconductor device are disclosed. In one aspect, a method of manufacturing is provided that includes providing a first semiconductor chip (20) that has a substrate and a first active circuitry portion (40) extending a first distance into the substrate. A barrier (135) is formed in the first semiconductor chip (20) that surrounds but is laterally separated from the first active circuitry portion (40) and extends into the substrate a second distance greater than the first distance.
摘要翻译：公开了用于建立半导体器件的热通路的各种方法和装置。在一个方面，提供一种制造方法，其包括提供具有基板的第一半导体芯片（20）和向基板延伸第一距离的第一有源电路部分（40）。在第一半导体芯片（20）中形成屏障（135），该第一半导体芯片（20）围绕第一半导体芯片（20），但是与第一有源电路部分（40）横向分离，并延伸到基板中比第一距离大的第二距离。

6. 发明申请

WO2010107542A1 THERMAL INTERFACE MATERIAL WITH SUPPORT STRUCTURE 审中-公开
标题翻译：具有支撑结构的热界面材料
公开(公告)号：WO2010107542A1
公开(公告)日：2010-09-23
申请号：PCT/US2010/024589
申请日：2010-02-18
申请人： ADVANCED MICRO DEVICES, INC. , ATI TECHNOLOGIES ULC , TOUZELBAEV, Maxat , BLACK, Bryan , YANG, Yizhang , REFAI-AHMED, Gamal
发明人： TOUZELBAEV, Maxat , BLACK, Bryan , YANG, Yizhang , REFAI-AHMED, Gamal
IPC分类号： H01L23/42
CPC分类号： H01L23/42 , H01L2224/0554 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/13025 , H01L2224/16225 , H01L2224/29076 , H01L2224/29109 , H01L2224/29111 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29169 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/73204 , H01L2924/00014 , H01L2924/15311 , H01L2924/00 , H01L2924/01047 , H01L2924/013 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip (15, 115) and a heat spreader (30) is provided. The method includes placing a thermal interface material layer (35, 35 ', 35 ", 35 " ', 35 " ") containing a support structure (40, 40') on the first semiconductor chip (15, 115). The heat spreader (30) is positioned proximate the thermal interface material layer (35, 35 ', 35 ", 35 " ', 35 " "). The thermal interface material layer (35, 35 ', 35 ", 35 " ', 35 "") is reflowed to establish thermal contact with both the first semiconductor chip (15, 115) and the heat spreader (30).
摘要翻译：公开了各种半导体芯片热界面材料的方法和装置。一方面，提供了在第一半导体芯片（15,115）和散热器（30）之间建立热接触的方法。该方法包括将包含支撑结构（40,40'）的热界面材料层（35,35'，35“，35”'，35“）放置在第一半导体芯片（15,115）上。散热器（30）位于热界面材料层（35,35'，35“，35”'，35“”）附近。热界面材料层（35,35'，35“，35”'，35“”）被回流以与第一半导体芯片（15,115）和散热器（30）建立热接触。

7. 发明申请

WO2020117406A1 CIRCUIT BOARD WITH COMPACT PASSIVE COMPONENT ARRANGEMENT 审中-公开
公开(公告)号：WO2020117406A1
公开(公告)日：2020-06-11
申请号：PCT/US2019/058459
申请日：2019-10-29
申请人： ADVANCED MICRO DEVICES, INC.
发明人： BHAGAVAT, Milind, S. , AGARWAL, Rahul
IPC分类号： H01L25/065 , H01L23/31 , H01L23/528
摘要： Various circuit boards with mounted passive components and method of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes at least partially encapsulating a first plurality of passive components (235) in a molding material (240) to create a first molded passive component group (233a). The first molded passive component group is mounted on a surface of a circuit board (210). The first plurality of passive components are electrically connected to the circuit board.

8. 发明申请

WO2020106323A1 INTEGRATED HEAT SPREADER WITH CONFIGURABLE HEAT FINS 审中-公开
公开(公告)号：WO2020106323A1
公开(公告)日：2020-05-28
申请号：PCT/US2019/039783
申请日：2019-06-28
申请人： ADVANCED MICRO DEVICES, INC.
发明人： MCNAMARA, Andrew , KALVE, Swagata
IPC分类号： H01L23/367 , H05K7/20
摘要： Various integrated heat spreaders and methods of making the same are disclosed. In one aspect, an integrated heat spreader (115) to provide thermal management of a first heat generating component (117) on a circuit board (105) is provided. The integrated heat spreader includes a shell (118) that has an internal space (130), at least one inlet port (l20a) to receive a coolant (140) to cool the first heat generating component and at least one outlet port (l20b) to discharge the coolant. Plural heat fins (l35a, 135b) are connected to the shell in the internal space. The heat fins are selectively connectable to the shell in multiple arrangements to provide selected flow rates of the coolant in one or more regions of the internal space.

9. 发明申请

WO2013148925A1 DIE STACKING WITH COUPLED ELECTRICAL INTERCONNECTS TO ALIGN PROXIMITY INTERCONNECTS 审中-公开
标题翻译：具有耦合电气互连的DIE堆叠以对准接近互连
公开(公告)号：WO2013148925A1
公开(公告)日：2013-10-03
申请号：PCT/US2013/034232
申请日：2013-03-28
申请人： ADVANCED MICRO DEVICES, INC.
发明人： BLACK, Bryan , SU, Michael , MCLELLAN, Neil , SIEGEL, Joe , ALFANO, Michael
IPC分类号： H01L25/065
CPC分类号： H01L25/0657 , H01L23/48 , H01L24/11 , H01L24/13 , H01L24/81 , H01L2224/03912 , H01L2224/0401 , H01L2224/11452 , H01L2224/1146 , H01L2224/1147 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13164 , H01L2224/13562 , H01L2224/13611 , H01L2224/16 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2224/81193 , H01L2224/81203 , H01L2224/81815 , H01L2224/8191 , H01L2224/83102 , H01L2225/06513 , H01L2225/06531 , H01L2924/00014 , H01L2924/01047 , H01L2924/01029 , H01L2924/014
摘要： A method of manufacturing is provided that includes forming a first proximity interconnect (60) on a first side (77) of a first semiconductor chip (15) and a first plurality of interconnect structures (100b) projecting from the first side. A second proximity interconnect (65) is formed on a second side (82) of a second semiconductor chip (20) and a second plurality of interconnect structures (100b) are formed projecting from the second side. The second semiconductor chip (20) is coupled to the first semiconductor chip (15) so that the second side faces the first side and the first interconnect structures are coupled to the second interconnect structures. The first and second proximity interconnects (60, 65) cooperate to provide a proximity interface. The coupling of the first interconnect structures (100b) to the second interconnect structures (110b) provides desired vertical and lateral alignment of the first and second proximity interconnects (60, 65).
摘要翻译：提供一种制造方法，其包括在第一半导体芯片（15）的第一侧（77）上形成第一邻近互连（60）和从第一侧突出的第一多个互连结构（100b）。第二接近互连（65）形成在第二半导体芯片（20）的第二侧（82）上，并且第二多个互连结构（100b）从第二侧突出形成。第二半导体芯片（20）耦合到第一半导体芯片（15），使得第二侧面向第一侧，并且第一互连结构耦合到第二互连结构。第一和第二邻近互连（60,65）协作以提供接近接口。第一互连结构（100b）与第二互连结构（110b）的耦合提供了第一和第二邻近互连（60,65）的期望的垂直和横向对准。

10. 发明申请

WO2013085808A1 BUOYANT CLAMP FOR TUBULAR MEMBERS 审中-公开
标题翻译：管AR。。。。。。。。
公开(公告)号：WO2013085808A1
公开(公告)日：2013-06-13
申请号：PCT/US2012/067233
申请日：2012-11-30
申请人： SPECIALIZED SEAL DESIGN AND DISTRIBUTION, INC.
发明人： OTTEN, Gregory, K. , MANNELLA, Eugene, J.
IPC分类号： F16L3/22 , F16L3/223 , F16L3/08
CPC分类号： B65D63/00 , E21B17/012 , E21B17/026 , F16B7/0426 , F16L1/24
摘要： Various clamps (10, 10', 10", 10"', 10"") for connecting one tubular member (15) to another (20), methods of using and making such clamps are disclosed. In one aspect a clamp (10) for coupling a first tubular member (15) to a second tubular member (20) is provided. The clamp includes a first clamp half (25) and a second clamp half (30) engageable with the first clamp half (25). The first and second clamp halves (25, 30) define a first through bore (202) to accommodate the first tubular member (15) and a second through bore (203) to accommodate the second tubular member (20). A strap (35) is adapted to circumscribe at least a portion of and bring into engagement the first and second clamp halves. The clamp (10) is buoyant in water.
摘要翻译：公开了用于将一个管状构件（15）连接到另一个（20）的各种夹具（10,10'，10“，10”'，10“”），使用和制造这种夹具的方法。在一个方面，提供了用于将第一管状构件（15）联接到第二管状构件（20）的夹具（10）。夹具包括可与第一夹具半部（25）接合的第一夹具半部（25）和第二夹具半部（30）。第一和第二夹具半部（25,30）限定第一通孔（202）以容纳第一管状构件（15）和第二通孔（203）以容纳第二管状构件（20）。带子（35）适于围绕第一和第二夹具半部的至少一部分并使其接合。夹具（10）在水中浮力。

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