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1. 发明申请

WO2015119832A1 ELECTROSTATIC DISCHARGE PROTECTION DEVICE 审中-公开
标题翻译：静电放电保护装置
公开(公告)号：WO2015119832A1
公开(公告)日：2015-08-13
申请号：PCT/US2015/013592
申请日：2015-01-29
申请人： TRIQUINT SEMICONDUCTOR, INC.
发明人： HENDERSON, Timothy, S. , KNAPP, Robert, E.
IPC分类号： H01L27/04
CPC分类号： H01L29/732 , H01L27/0248 , H01L29/0692 , H01L29/0804 , H01L29/0813 , H01L29/20 , H01L29/41708 , H01L29/66272 , H01L29/6631
摘要： Various embodiments provide an electrostatic discharge (ESD) protection device. The ESD protection device may include a subcollector, collector, base, and emitter formed in layers on top of one another. The emitter may include a different semiconductor than a semiconductor included in the base to form a heterojunction. The ESD protection device may include a collector contact disposed on the subcollector and an emitter contact disposed on the emitter. The ESD protection device may be a two-terminal device, with no conductive base contact coupled with the base.
摘要翻译：各种实施例提供静电放电（ESD）保护装置。 ESD保护装置可以包括彼此顶部上形成层的子集电极，集电极，基极和发射极。发射极可以包括与包括在基底中的半导体不同的半导体，以形成异质结。 ESD保护装置可以包括设置在子集电极上的集电极触点和设置在发射极上的发射极触点。 ESD保护器件可以是两端器件，其中没有与基极耦合的导电基极接触。

2. 发明申请

WO2010120423A3 FIELD EFFECT TRANSISTOR HAVING A PLURALITY OF FIELD PLATES 审中-公开
公开(公告)号：WO2010120423A3
公开(公告)日：2010-10-21
申请号：PCT/US2010/027486
申请日：2010-03-16
申请人： TRIQUINT SEMICONDUCTOR, INC. , TSERNG, Hua, Quen , DUMKA, Deep, C. , JONES, Martin, E. , CAMPBELL, Charles, F. , BALISTRERI, Anthony, M.
发明人： TSERNG, Hua, Quen , DUMKA, Deep, C. , JONES, Martin, E. , CAMPBELL, Charles, F. , BALISTRERI, Anthony, M.
IPC分类号： H01L29/78 , H01L21/336
摘要： Embodiments include but are not limited to apparatuses and systems including a field-effect transistor switch. A field-effect transistor switch may include a first field plate coupled with a gate electrode, the first field plate disposed substantially equidistant from a source electrode and a drain electrode. The field- effect transistor switch may also include a second field plate proximately disposed to the first field plate and disposed substantially equidistant from the source electrode and the drain electrode. The first and second field plates may be configured to reduce an electric field between the source electrode and the gate electrode and between the drain electrode and the gate electrode.

3. 发明申请

WO2010054100A2 RADIO FREQUENCY AMPLIFICATION CIRCUIT UTILIZING VARIABLE VOLTAGE GENERATOR 审中-公开
标题翻译：使用可变电压发生器的无线电频率放大电路
公开(公告)号：WO2010054100A2
公开(公告)日：2010-05-14
申请号：PCT/US2009/063424
申请日：2009-11-05
申请人： TRIQUINT SEMICONDUCTOR, INC. , LESAGE, Steve
发明人： LESAGE, Steve
IPC分类号： H04B1/14 , H03F1/30
CPC分类号： H03F3/24 , H03F1/0272 , H03F3/189 , H03F2200/204 , H03F2200/27 , H03F2200/451 , H03F2200/471 , H03F2200/78 , H03G3/3042 , H04B2001/0416
摘要： Embodiments of apparatuses, methods, and systems for a radio frequency amplification circuit utilizing a variable voltage generator are generally described herein. Other embodiments may be described and claimed.
摘要翻译：这里通常描述利用可变电压发生器的射频放大电路的装置，方法和系统的实施例。可以描述和要求保护其他实施例。

4. 发明申请

WO2008100889A3 GALLIUM NITRIDE TRAVELING WAVE STRUCTURES 审中-公开
标题翻译： GALLIUM NITRIDE行驶波浪结构
公开(公告)号：WO2008100889A3
公开(公告)日：2009-08-06
申请号：PCT/US2008053659
申请日：2008-02-12
申请人： LOCKHEED CORP , TRIQUINT SEMICONDUCTOR INC , ROBINSON KEVIN L , SAUNIER PAUL , TSERNG HUA-QUEN
发明人： ROBINSON KEVIN L , SAUNIER PAUL , TSERNG HUA-QUEN
IPC分类号： H01L29/20
CPC分类号： H03F3/54 , H03F3/607
摘要： A traveling wave device employs an active Gallium Nitride FET. The Gallium Nitride FET has a plurality of gate feeding fingers connecting to an input gate transmission line. The FET has a drain electrode connected to an output drain transmission line with the source electrode connected to a point of reference potential. The input and output transmission lines are terminated with terminating impedances which are not matched to the gate and drain transmission lines. The use of Gallium Nitride enables the terminating impedance to be at much higher levels than in the prior art. The use of Gallium Nitride permits multiple devices to be employed, thus resulting in higher gain amplifiers with higher voltage operation and higher frequency operation. A cascode traveling wave amplifier employing GaN FETs is also described having high gain and bandwidth.
摘要翻译：行波装置采用有源氮化镓FET。氮化镓FET具有连接到输入栅极传输线的多个栅极馈电指状物。 FET具有连接到输出漏极传输线的漏电极，源电极连接到参考电位点。输入和输出传输线由端接阻抗端接，其与栅极和漏极传输线不匹配。使用氮化镓可使端接阻抗比现有技术高得多。使用氮化镓允许使用多个器件，从而导致具有较高电压操作和较高频率操作的较高增益放大器。还描述了采用GaN FET的共源共栅行波放大器具有高增益和带宽。

5. 发明申请

WO2008027802A3 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT FOR COMPOUND SEMICONDUCTOR DEVICES AND CIRCUITS 审中-公开
公开(公告)号：WO2008027802A3
公开(公告)日：2008-03-06
申请号：PCT/US2007/076724
申请日：2007-08-24
申请人： TRIQUINT SEMICONDUCTOR, INC. , PING, Andrew, T. , OGBONNAH, Dominic, J.
发明人： PING, Andrew, T. , OGBONNAH, Dominic, J.
IPC分类号： H05F3/00
摘要： An apparatus and method is disclosed for providing an electrostatic discharge protection circuit for compound semiconductor devices and circuits. The electrostatic discharge protection circuit comprises a first terminal and a second terminal. The electrostatic discharge protection circuit further comprises a transistor shunt element that is operably coupled between the first terminal and the second terminal; the transistor shunt element is capable of providing a bi-directional discharge path between the first terminal and the second terminal. The electrostatic discharge protection circuit further comprises a shut-off element that is operably coupled with the second terminal; the shut-off element is capable of keeping the transistor shunt element turned-off.

6. 发明申请

WO2005074549A3 BIPOLAR JUNCTION TRANSISTOR GEOMETRY 审中-公开
标题翻译：双极晶体管几何
公开(公告)号：WO2005074549A3
公开(公告)日：2007-02-08
申请号：PCT/US2005002752
申请日：2005-01-31
申请人： TRIQUINT SEMICONDUCTOR INC
发明人： APEL THOMAS R , MIDDLETON JEREMY R
IPC分类号： H01L27/082 , H01L27/102 , H01L29/06 , H01L29/70 , H01L29/737 , H01L31/11
CPC分类号： H01L29/737 , H01L29/0692
摘要： The invention pertains to an integrated circuit comprising a bipolar junction transistor (100) in which a base contact region (120) forms a fishbone configuration and an emitter region (110) is adjacent to the periphery of the fishbone configuration.
摘要翻译：本发明涉及一种集成电路，其包括双极结型晶体管（100），其中基极接触区域（120）形成鱼骨形状，并且发射极区域（110）邻近鱼骨构造的外围。

7. 发明申请

WO2004045065A2 ACCURATE POWER DETECTION FOR A MULTI-STAGE AMPLIFIER 审中-公开
标题翻译：准确检测多级放大器的功率
公开(公告)号：WO2004045065A2
公开(公告)日：2004-05-27
申请号：PCT/US2003/033464
申请日：2003-10-20
申请人： TRIQUINT SEMICONDUCTOR, INC.
发明人： LIU, Li , SOUCHUNS, Christopher, C. , LI, Ping , HENDERSON, Gregory, N.
IPC分类号： H03F
CPC分类号： H03F1/0205 , H03F3/189 , H03F3/68
摘要： A multi-stage amplifier is coupled with a power detector. The multi-stage amplifier includes a plurality of amplifier stages in series, with a signal path extending through them. The power detector is coupled to an interior node of the amplifier along the signal path, and is operable to sample a first signal being transmitted on the signal path. The power detector outputs a second signal reflective of a power of the first signal. In one embodiment, the interior node is in a matching network of the amplifier disposed between a first amplifier stage and a final amplifier stage of the amplifier. The second signal may be used in a feedback network to adjust an amount of amplification of the first signal by the amplifier.
摘要翻译：多级放大器与功率检测器耦合。多级放大器包括串联的多个放大器级，信号路径延伸穿过它们。功率检测器沿着信号路径耦合到放大器的内部节点，并且可操作以对在信号路径上传输的第一信号进行采样。功率检测器输出反映第一信号的功率的第二信号。在一个实施例中，内部节点位于设置在放大器的第一放大器级和末级放大器级之间的放大器的匹配网络中。第二信号可以用在反馈网络中以调整放大器对第一信号的放大量。

8. 发明申请

WO2004027984A1 EFFICIENT POWER CONTROL OF A POWER AMPLIFIER BY PERIPHERY SWITCHING 审中-公开
标题翻译：通过外设切换功率放大器的有效功率控制
公开(公告)号：WO2004027984A1
公开(公告)日：2004-04-01
申请号：PCT/US2003/027839
申请日：2003-08-29
申请人： TRIQUINT SEMICONDUCTOR, INC.
发明人： APEL, Thomas R.
IPC分类号： H03F1/14
CPC分类号： H03F1/0277 , H03F1/0244 , H03F1/0261 , H03F1/302 , H03F2203/21178 , H03F2203/7206 , H03F2203/7236
摘要： A power amplifier having a first amplifier output stage and a parallel second amplifier output stage is provided. The first amplifier output stage is enabled (i.e., fully biased) during both high power and low power operating modes. The second amplifier output stage is disabled during the low power operating mode, and enabled during the high power operating mode. Because neither the first nor second amplifier output stage is operated in an extremely low quiescent current state, the linearity of the power amplifier is maintained for both high power and low power operating modes.
摘要翻译：提供具有第一放大器输出级和并行第二放大器输出级的功率放大器。在高功率和低功率操作模式期间，第一放大器输出级被使能（即完全偏置）。第二个放大器输出级在低功耗工作模式下被禁止，并在高功率工作模式下使能。由于第一和第二放大器输出级都不工作在极低的静态电流状态，所以功率放大器的线性度保持在高功率和低功率工作模式。

9. 发明申请

WO02054583A3 RF POWER AMPLIFIER WITH DISTRIBUTED BIAS CIRCUIT 审中-公开
标题翻译：具有分布式偏置电路的RF功率放大器
公开(公告)号：WO02054583A3
公开(公告)日：2004-03-25
申请号：PCT/US0148212
申请日：2001-12-13
申请人： TRIQUINT SEMICONDUCTOR INC
发明人： APEL THOMAS R , KNAPP ROBERT E
IPC分类号： H03F1/30 , H03F3/19 , H03F3/21
CPC分类号： H03F1/302
摘要： An improved amplifier circuit is disclosed. In one embodiment, the amplifier circuit includes an amplifier transistor that has a base terminal connected to receive an input signal. The amplifier circuit also includes a reference voltage source that generates a reference voltage at a reference voltage output node. A local bias circuit provides a bias voltage to the base terminal of the amplifier transistor. The local bias circuit includes a first transistor that has an emitter terminal coupled to the reference voltage output node, a collector terminal coupled to a supply voltage node, and a base terminal connected to the collector terminal. The local bias circuit also includes a second transistor that has a base terminal coupled to the base terminal of the first transistor, a collector terminal coupled to the supply voltage node, and an emitter terminal coupled to the base terminal of the amplifier transistor. The bias circuit provides a robust, thermally compensated bias voltage to any number of amplifier cells. The bias circuit is ballasted to prevent thermal runaway in any one of the amplifier cells.
摘要翻译：公开了一种改进的放大器电路。在一个实施例中，放大器电路包括放大器晶体管，其具有连接的基极端子以接收输入信号。放大器电路还包括在参考电压输出节点处产生参考电压的参考电压源。局部偏置电路向放大器晶体管的基极提供偏置电压。局部偏置电路包括具有耦合到参考电压输出节点的发射极端子，耦合到电源电压节点的集电极端子和连接到集电极端子的基极端子的第一晶体管。局部偏置电路还包括第二晶体管，其具有耦合到第一晶体管的基极端子的基极端子，耦合到电源电压节点的集电极端子和耦合到放大器晶体管的基极端子的发射极端子。偏置电路为任何数量的放大器单元提供稳健的热补偿偏置电压。偏置电路被镇流以防止任何一个放大器单元中的热失控。

10. 发明申请

WO2002095865A1 THREE-LEVEL BALUN AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：三级巴伦及其制造方法
公开(公告)号：WO2002095865A1
公开(公告)日：2002-11-28
申请号：PCT/US2002/015652
申请日：2002-05-13
申请人： TRIQUINT SEMICONDUCTOR, INC.
发明人： APEL, Thomas, R. , CAMPBELL, Richard, L.
IPC分类号： H01P5/10
CPC分类号： H01P5/10
摘要： A three-level semiconductor balun (10) is disclosed. In one embodiment, the balun (10) includes a first spiral-shaped transmission line (14) overlying a substrate. The first transmission line (14) has first and second ends. A second spiral-shaped transmission line (13) is substantially vertically aligned with the first transmission line (14). The second transmission line (13) has a first end electrically connected to the second end of the first transmission line (14). A third spiral-shaped transmission line (12) is substantially vertically aligned with the first and second transmission lines (14,13). The third transmission line (12) has a first end electrically connected to a second end of the second transmission line (13). The balun (10) may be integrated on the same chip with other RF circuit components, and is suitable for use at higher frequencies than most conventional baluns.
摘要翻译：公开了一种三电平半导体平衡 - 不平衡变压器（10）。在一个实施例中，平衡 - 不平衡变换器（10）包括覆盖在衬底上的第一螺旋形传输线（14）。第一传输线（14）具有第一和第二端。第二螺旋形传输线（13）与第一传输线（14）基本垂直对准。第二传输线（13）具有电连接到第一传输线（14）的第二端的第一端。第三螺旋形传输线（12）与第一和第二传输线（14）大致垂直对准。第三传输线（12）具有电连接到第二传输线（13）的第二端的第一端。平衡 - 不平衡转换器（10）可以与其他RF电路组件集成在同一芯片上，并且适用于比大多数常规平衡 - 不平衡变换器更高的频率。

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