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1. 发明申请

WO2002095865A1 THREE-LEVEL BALUN AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：三级巴伦及其制造方法
公开(公告)号：WO2002095865A1
公开(公告)日：2002-11-28
申请号：PCT/US2002/015652
申请日：2002-05-13
申请人： TRIQUINT SEMICONDUCTOR, INC.
发明人： APEL, Thomas, R. , CAMPBELL, Richard, L.
IPC分类号： H01P5/10
CPC分类号： H01P5/10
摘要： A three-level semiconductor balun (10) is disclosed. In one embodiment, the balun (10) includes a first spiral-shaped transmission line (14) overlying a substrate. The first transmission line (14) has first and second ends. A second spiral-shaped transmission line (13) is substantially vertically aligned with the first transmission line (14). The second transmission line (13) has a first end electrically connected to the second end of the first transmission line (14). A third spiral-shaped transmission line (12) is substantially vertically aligned with the first and second transmission lines (14,13). The third transmission line (12) has a first end electrically connected to a second end of the second transmission line (13). The balun (10) may be integrated on the same chip with other RF circuit components, and is suitable for use at higher frequencies than most conventional baluns.
摘要翻译：公开了一种三电平半导体平衡 - 不平衡变压器（10）。在一个实施例中，平衡 - 不平衡变换器（10）包括覆盖在衬底上的第一螺旋形传输线（14）。第一传输线（14）具有第一和第二端。第二螺旋形传输线（13）与第一传输线（14）基本垂直对准。第二传输线（13）具有电连接到第一传输线（14）的第二端的第一端。第三螺旋形传输线（12）与第一和第二传输线（14）大致垂直对准。第三传输线（12）具有电连接到第二传输线（13）的第二端的第一端。平衡 - 不平衡转换器（10）可以与其他RF电路组件集成在同一芯片上，并且适用于比大多数常规平衡 - 不平衡变换器更高的频率。

2. 发明申请

WO2002060002A1 INTEGRATED BROADSIDE COUPLED TRANSMISSION LINE ELEMENT 审中-公开
标题翻译：集成式广泛耦合传输线元件
公开(公告)号：WO2002060002A1
公开(公告)日：2002-08-01
申请号：PCT/US2002/001529
申请日：2002-01-16
申请人： TRIQUINT SEMICONDUCTOR, INC.
发明人： APEL, Thomas, R. , CAMPBELL, Richard, L.
IPC分类号： H01P5/10
CPC分类号： H01P5/187 , H01P5/10
摘要： A novel broadside-coupled transmission line element is disclosed. The element includes a first metallization layer that has a first spiral-shaped transmission line and at least one bridge segment formed therein. The element also includes a second metallization layer that has a second spiral-shaped transmission line and connector segments formed therein. The connector segments provide respective electrical conduction paths between the inner area of the first and second transmission lines and the outer area of the first and second transmission lines. A first one of the connector segments is electrically connected to the inner terminus of the second transmission line. The second transmission line has a gap at each intersection with the connector segments. A dielectric layer lies between the first and second metallization layers. The dielectric layer has a plurality of apertures formed therein for providing electrical connections between the second transmission line and the bridge segment(s) of the first metallization layer, and for providing an electrical connection between the inner terminus of the first transmission line and a second one of the connector segments. The element is realized in an integrated circuit environment, and may be used to create various circuit elements such as baluns, balanced and unbalanced transformers and current and voltage inverters for operation at high frequencies.
摘要翻译：公开了一种新颖的宽边耦合传输线元件。元件包括第一金属化层，其具有形成在其中的第一螺旋形传输线和至少一个桥接段。元件还包括第二金属化层，其具有形成在其中的第二螺旋形传输线和连接器段。连接器段在第一和第二传输线的内部区域和第一和第二传输线的外部区域之间提供相应的导电路径。连接器段中的第一个电连接到第二传输线的内部末端。第二传输线在与连接器段的每个交叉处具有间隙。电介质层位于第一和第二金属化层之间。介电层具有形成在其中的多个孔，用于提供第二传输线与第一金属化层的桥接段之间的电连接，并且用于在第一传输线的内部末端和第二传输线之间提供电连接其中一个连接器部分。该元件在集成电路环境中实现，并且可用于创建各种电路元件，例如巴伦，平衡和不平衡变压器以及用于在高频下操作的电流和电压逆变器。

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