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1. 发明申请

WO2015112444A1 METHODS AND SYSTEMS FOR MEASURING PERIODIC STRUCTURES USING MULTI-ANGLE X-RAY REFLECTANCE SCATTEROMETRY (XRS) 审中-公开
标题翻译：使用多角度X射线反射散射测量（XRS）测量周期结构的方法和系统
公开(公告)号：WO2015112444A1
公开(公告)日：2015-07-30
申请号：PCT/US2015/011753
申请日：2015-01-16
申请人： REVERA, INCORPORATED
发明人： POIS, Heath A. , REED, David A. , SCHUELER, Bruno W. , SMEDT, Rodney , FANTON, Jeffrey T.
IPC分类号： G01B15/00 , G01N23/223 , H01L21/66
CPC分类号： G01N23/201 , G01N2223/054 , H01L22/12
摘要： Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.
摘要翻译：公开了使用多角度X射线反射散射法（XRS）测量周期性结构的方法和系统。例如，通过X射线反射散射测定样品的方法包括将入射的X射线束照射在具有周期性结构的样品上以产生散射的X射线束，入射的X射线束同时提供多个入射角和多个方位角。该方法还涉及收集散射的X射线束的至少一部分。

2. 发明申请

WO2017079322A1 METHOD AND SYSTEM FOR NON-DESTRUCTIVE METROLOGY OF THIN LAYERS 审中-公开
标题翻译：用于薄层的非破坏性计量的方法和系统
公开(公告)号：WO2017079322A1
公开(公告)日：2017-05-11
申请号：PCT/US2016/060147
申请日：2016-11-02
申请人： REVERA INCORPORATED
发明人： LEE, Wei Ti , POIS, Heath , KLARE, Mark , BOZDOG, Cornel
IPC分类号： H01L21/00
CPC分类号： G01N23/2208 , G01B11/06 , G01B15/02 , G01N23/223 , G01N23/2273 , G01N2223/305 , G01N2223/633 , H01L22/12
摘要： Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
摘要翻译：通过执行以下步骤来实现确定集成电路（IC）的层的属性，所述层形成在底层上方：照射IC以由此从IC喷射电子; 收集从IC发射的电子并确定发射的电子的动能，从而计算从该层发射的电子和从底层发射的电子的发射强度，计算从该层发射的电子的发射强度与从该层发射的电子的比率底层; 并使用该比率来确定层的材料组成或厚度。照射IC和收集电子的步骤可以使用X射线光电子能谱（XPS）或X射线荧光能谱（XRF）来进行。

3. 发明申请

WO2016130690A1 SYSTEMS AND APPROACHES FOR SEMICONDUCTOR METROLOGY AND SURFACE ANALYSIS USING SECONDARY ION MASS SPECTROMETRY 审中-公开
标题翻译：使用二次离子质谱法的半导体计量学和表面分析的系统和方法
公开(公告)号：WO2016130690A1
公开(公告)日：2016-08-18
申请号：PCT/US2016/017370
申请日：2016-02-10
申请人： REVERA, INCORPORATED
发明人： REED, David A. , SCHUELER, Bruno W. , NEWCOME, Bruce H. , SMEDT, Rodney , BEVIS, Chris
IPC分类号： H01J49/26 , H01J49/10 , H01L21/66
CPC分类号： H01J49/142 , G01N23/22 , G01Q10/04 , H01J49/26 , H01L22/12
摘要： Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
摘要翻译：公开了使用二次离子质谱（SIMS）的半导体测量和表面分析的系统和方法。在一个实例中，二次离子质谱（SIMS）系统包括样品台。一次离子束被引导到样品台。提取透镜指向样品台。提取透镜被配置为为从样品台上的样品发射的二次离子提供低提取场。磁扇区光谱仪沿着SIMS系统的光路耦合到提取透镜。磁扇区光谱仪包括耦合到磁扇区分析仪（MSA）的静电分析仪（ESA）。

4. 发明申请

WO2006118811A2 TECHNIQUES FOR ANALYZING DATA GENERATED BY INSTRUMENTS 审中-公开
标题翻译：用于分析仪器生成数据的技术
公开(公告)号：WO2006118811A2
公开(公告)日：2006-11-09
申请号：PCT/US2006/014942
申请日：2006-04-19
申请人： REVERA INCORPORATED , ORROCK, James , LARSON, Thomas, C. , SCHUELER, Bruno , BOT, Lawrence , QUIGLEY, James , GURER, Emir
发明人： ORROCK, James , LARSON, Thomas, C. , SCHUELER, Bruno , BOT, Lawrence , QUIGLEY, James , GURER, Emir
IPC分类号： G06F15/00
CPC分类号： G01N23/2273
摘要： According to one embodiment of the invention, a method for analyzing data from an instrument is disclosed. The raw data generated by the instrument, along with configuration data generated by a user, is packaged into a calling model. The raw data may include, for example, counts having a certain kinetic energy when analyzing photoelectron spectroscopy data. The configuration data may include several parameters selected by the user based on the composition and configuration of the structure being measured. The calling model may serve as an interface between the instrument and an engine for generating an algorithm for returning desired results to the user. The engine then generates the algorithm as well as the results specified by the user, and the calling model returns the results to the user. This allows a specific algorithm and results for a specific measured sample or structure to be generated using known algorithms and functions.
摘要翻译：根据本发明的一个实施例，公开了一种用于分析来自仪器的数据的方法。由仪器生成的原始数据以及用户生成的配置数据被打包成一个呼叫模型。原始数据可以包括例如在分析光电子能谱数据时具有一定动能的计数。配置数据可以包括基于所测量结构的组成和配置的用户选择的几个参数。呼叫模型可以用作仪器和引擎之间的接口，用于生成用于将期望结果返回给用户的算法。然后，引擎生成算法以及用户指定的结果，调用模型将结果返回给用户。这允许使用已知的算法和功能来生成特定的测量样本或结构的特定算法和结果。

5. 发明申请

WO2015164417A1 SILICON GERMANIUM THICKNESS AND COMPOSITION DETERMINATION USING COMBINED XPS AND XRF TECHNOLOGIES 审中-公开
标题翻译：使用组合XPS和XRF技术的硅锗厚度和组成测定
公开(公告)号：WO2015164417A1
公开(公告)日：2015-10-29
申请号：PCT/US2015/026935
申请日：2015-04-21
申请人： REVERA, INCORPORATED
发明人： POIS, Heath A. , LEE, Wei Ti
IPC分类号： G01D21/02 , G01B15/02 , G01N23/227 , G01N23/223
CPC分类号： G01N23/2206 , G01B15/02 , G01N23/2208 , G01N23/223 , G01N23/2273 , G01N2223/61 , G01N2223/6116
摘要： Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.
摘要翻译：描述了使用组合XPS和XRF技术的硅锗厚度和成分测定的系统和方法。在一个示例中，用于表征硅锗膜的方法包括产生X射线束。样品位于所述X射线束的通路中。收集通过用所述X射线束轰击所述样品产生的X射线光电子能谱（XPS）信号。还收集通过用所述X射线束轰击所述样品产生的X射线荧光（XRF）信号。硅锗膜的厚度或组成或两者均由XRF信号或XPS信号或两者确定。

6. 发明申请

WO2007037931A2 A PHOTOELECTRON SPECTROSCOPY APPARATUS AND METHOD OF USE 审中-公开
标题翻译：一种光电子光谱设备和使用方法
公开(公告)号：WO2007037931A2
公开(公告)日：2007-04-05
申请号：PCT/US2006/034781
申请日：2006-09-08
申请人： REVERA INCORPORATED , SCHUELER, Bruno, W. , REED, David, A.
发明人： SCHUELER, Bruno, W. , REED, David, A.
IPC分类号： H01J40/00
CPC分类号： G01N23/2273 , G01N2223/085 , G01N2223/6116 , H01J2235/08
摘要： According to one aspect of the present invention, a substrate processing system is provided. The system may include a chamber wall enclosing a chamber, a substrate support positioned within the chamber to support a substrate, an electromagnetic radiation source to emit electromagnetic radiation onto the substrate on the substrate support, the electromagnetic radiation causing photoelectrons to be emitted from a material on the substrate, an analyzer to capture the photoelectrons emitted from the substrate, and a magnetic field generator to generate a magnetic field within the chamber and guide the photoelectrons from the substrate to the analyzer.
摘要翻译：根据本发明的一个方面，提供了一种基板处理系统。该系统可以包括封闭腔室的腔室壁，定位在腔室内以支撑基底的基底支撑件，用于将电磁辐射发射到基底支撑件上的基底上的电磁辐射源，电磁辐射导致光电子从材料在衬底上，捕获从衬底发射的光电子的分析器，以及在室内产生磁场并将光电子从衬底引导到分析器的磁场发生器。

7. 发明申请

WO2006088527A2 A SEMICONDUCTOR SUBSTRATE PROCESSING METHOD AND APPARATUS 审中-公开
标题翻译：一种半导体基板处理方法和装置
公开(公告)号：WO2006088527A2
公开(公告)日：2006-08-24
申请号：PCT/US2005/042863
申请日：2005-11-28
申请人： REVERA, INCORPORATED , PIKE, Alger, C.
发明人： PIKE, Alger, C.
IPC分类号： H01L21/00 , H01L21/68
CPC分类号： H01L21/67259 , H01L21/67242 , H01L21/67253 , H01L21/681
摘要： According to one aspect of the invention, a semiconductor substrate processing apparatus and a method for processing semiconductor substrates are provided. The method may include providing a semiconductor substrate having a surface and a plurality of features on the surface, each feature being positioned on the surface at a first respective point in a first coordinate system, plotting the position of each feature at a second respective point in a second coordinate system; and generating a translation between the first and the second coordinate systems. The generating of the translation may include calculating an offset between the first and the second coordinate systems. The calculating of the offset may include calculating an offset distance between a reference point of the first coordinate system and a reference point of the second coordinate system and calculating an offset angle between an axis of the first coordinate system and an axis of the second coordinate system.
摘要翻译：根据本发明的一个方面，提供半导体衬底处理装置和半导体衬底的处理方法。该方法可以包括提供在表面上具有表面和多个特征的半导体衬底，每个特征位于第一坐标系中的第一相应点处的表面上，绘制每个特征在第二个相应点处的位置第二坐标系; 以及产生第一和第二坐标系之间的平移。平移的产生可以包括计算第一和第二坐标系之间的偏移。偏移的计算可以包括计算第一坐标系的参考点和第二坐标系的参考点之间的偏移距离，并计算第一坐标系的轴与第二坐标系的轴之间的偏移角。

8. 发明申请

WO2016130603A1 A METHOD OF MEASUREMENT AND CONTROL OF THE SURFACE POTENTIAL OF A SAMPLE 审中-公开
标题翻译：测量和控制样品表面电位的方法
公开(公告)号：WO2016130603A1
公开(公告)日：2016-08-18
申请号：PCT/US2016/017224
申请日：2016-02-10
申请人： REVERA INCORPORATED
发明人： BEVIS, Christofer, Frederic , NEWCOME, Bruce , REED, David, A. , SHUELER, Bruno, W. , SMEDT, Rodney
IPC分类号： H01J49/26 , H01J49/10 , G01N23/22 , G01Q10/06
CPC分类号： H01J49/142 , G01N23/22 , G01Q10/04 , H01J49/26 , H01L22/12
摘要： A method of measurement and control of the surface potential of a sample using measuring the distribution of kinetic energy of charged particles emitted from a surface of a sample. A shift in kinetic energy of the charged particles is determined and the surface potential of the surface of the sample is changed in response the shift in kinetic energy of the charged particles.
摘要翻译：使用测量从样品表面发射的带电粒子的动能的分布来测量和控制样品的表面电位的方法。确定带电粒子的动能的变化，并且样品表面的表面电位响应于带电粒子的动能的变化而改变。

9. 发明申请

WO2015200112A1 FEED-FORWARD OF MULTI-LAYER AND MULTI-PROCESS INFORMATION USING XPS AND XRF TECHNOLOGIES 审中-公开
标题翻译：使用XPS和XRF技术进行多层次多进程信息的传输和多进程信息
公开(公告)号：WO2015200112A1
公开(公告)日：2015-12-30
申请号：PCT/US2015/036619
申请日：2015-06-19
申请人： REVERA, INCORPORATED
发明人： POIS, Heath, A. , LEE, Wei, Ti , BOT, Lawrence, V. , KWAN, Michael, C. , KLARE, Mark , LARSON, Charles, Thomas
IPC分类号： G01N23/22 , G01N23/223 , G01N23/227 , G01B15/02
CPC分类号： G01B15/02 , G01N23/223 , G01N23/2273
摘要： Methods and systems for feed- forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. A thickness of the first layer is determined based on the first XPS and XRF intensity signals. The information for the first layer and for the substrate is combined to estimate an effective substrate. Second XPS and XRF intensity signals are measured for a sample having a second layer above the first layer above the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.
摘要翻译：披露了使用XPS和XRF技术进行多层和多工艺信息前馈的方法和系统。在一个示例中，薄膜表征的方法包括测量具有衬底上方的第一层的样品的第一XPS和XRF强度信号。基于第一XPS和XRF强度信号确定第一层的厚度。组合第一层和底物的信息以估计有效的底物。对于在衬底上方的第一层上方具有第二层的样品测量第二XPS和XRF强度信号。该方法还涉及基于第二XPS和XRF强度信号来确定第二层的厚度，其计算有效衬底的厚度。

10. 发明申请

WO2015026824A1 METHODS AND SYSTEMS FOR FABRICATING PLATELETS OF A MONOCHROMATOR FOR X-RAY PHOTOELECTRON SPECTROSCOPY 审中-公开
标题翻译：用于制备X射线光电子能谱分光光度计板的方法和系统
公开(公告)号：WO2015026824A1
公开(公告)日：2015-02-26
申请号：PCT/US2014/051688
申请日：2014-08-19
申请人： REVERA INCORPORATED
发明人： FANTON, Jeffrey T. , SMEDT, Rodney , SCHUELER, Bruno W. , REED, David A.
IPC分类号： G01N23/22 , G01N23/227 , H01J49/48 , H01J37/256
CPC分类号： G01N23/20 , B23Q17/20 , G01N23/2273 , G21K1/06 , G21K2201/064 , H01J37/256 , Y10T29/49764 , Y10T29/49769 , Y10T29/49771 , Y10T29/53022
摘要： Methods and systems for fabricating platelets of a monochromator for X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a method of fabricating a platelet of a monochromator for X-ray photoelectron spectroscopy involves placing a crystal on a stage of an X-ray measuring apparatus, the crystal having a top surface. The method also involves measuring, by X-ray reflection, an orientation of a crystal plane of the crystal, the crystal plane beneath the top surface of the crystal and having a primary axis. The method also involves measuring a surface angle of the top surface of the crystal by measuring a light beam reflected from the top surface of the crystal.
摘要翻译：公开了用于制造用于X射线光电子能谱（XPS）的单色仪的血小板的方法和系统。例如，制造用于X射线光电子能谱的单色仪的血小板的方法包括将晶体放置在X射线测量装置的台上，该晶体具有顶面。该方法还包括通过X射线反射测量晶体的晶面的取向，晶体的顶表面下方的晶面并具有主轴。该方法还包括通过测量从晶体顶表面反射的光束来测量晶体顶表面的表面角度。

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