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81. 发明申请

WO01027350A1 OPTIMAL OFFSET, PAD SIZE AND PAD SHAPE FOR CMP BUFFING AND POLISHING 审中-公开
标题翻译：用于CMP缓冲和抛光的最佳偏移，焊盘尺寸和焊盘形状
公开(公告)号：WO01027350A1
公开(公告)日：2001-04-19
申请号：PCT/US2000/027271
申请日：2000-10-03
IPC分类号： B24B37/013 , B24B37/20 , B24B37/26 , H01L21/306 , C23F1/02 , H01L21/302 , H01L21/461
CPC分类号： H01L21/02024 , B24B37/013 , B24B37/20 , B24B37/26
摘要： An improvement to chemical-mechanical polishing. The improvement includes using a buffing pad having a geometrically optimized shape along with optimizing the buff head diameter, offset O and overlay L . In one embodiment, the buffing pad is smaller than the buff head and is mounted eccentrically. In another embodiment, the buffing pad has a generally square outer shape. In another embodiment, the buff pad is circular and is the same size as the circular buff head. In another embodiment, the buffing pad has at least three radially extending arms. The optimal configuration is determined iteratively for a selected process by changing the buffing pad shape, buff head diameter, the offset and the overlay. For example, increasing the offset generally tends to increase the removal rate toward the edge of the wafer. Increasing the overlap generally tends to increase the removal rate toward the center of the wafer. Removing portions of the buffing pad near the pad's edge tends to decrease the removal rate over the entire wafer radius but more so near the center and the edge of the wafer. By empirically testing various configurations, the optimal configuration can be found for a particular application.
摘要翻译：化学机械抛光的改进。该改进包括使用具有几何优化形状的抛光垫以及优化抛光头直径，偏移量O和覆盖层L。在一个实施例中，抛光垫小于抛光头并偏心安装。在另一个实施例中，抛光垫具有大致正方形的外部形状。在另一个实施例中，抛光垫是圆形的并且具有与圆形抛光头相同的尺寸。在另一个实施例中，抛光垫具有至少三个径向延伸的臂。通过改变抛光垫形状，抛光头直径，偏移和重叠，迭代地确定所选择的处理的最佳配置。例如，增加偏移通常趋向于增加朝向晶片边缘的去除率。增加重叠通常趋向于增加朝向晶片中心的去除率。去除衬垫边缘附近的抛光垫的部分倾向于降低整个晶片半径上的去除速率，但是更靠近晶片的中心和边缘。通过经验地测试各种配置，可以针对特定应用找到最佳配置。

82. 发明申请

WO01013416A1 METHOD AND APPARATUS FOR DEPOSITING AND CONTROLLING THE TEXTURE OF A THIN FILM 审中-公开
标题翻译：沉积和控制薄膜纹理的方法和装置
公开(公告)号：WO01013416A1
公开(公告)日：2001-02-22
申请号：PCT/US2000/040626
申请日：2000-08-09
IPC分类号： B24B37/04 , B24B37/20 , B24B37/22 , B24B37/24 , B24B37/26 , C25D5/00 , C25D5/02 , C25D5/06 , C25D5/22 , C25D7/12 , C25D17/14 , C25F7/00 , H01L21/00 , H01L21/288 , H01L21/321 , H01L21/768 , H01L23/532 , H01L23/522
CPC分类号： H01L23/53238 , B24B37/042 , B24B37/20 , B24B37/22 , B24B37/24 , B24B37/26 , C25D5/00 , C25D5/02 , C25D5/06 , C25D5/22 , C25D5/50 , C25D7/123 , C25D17/14 , C25D21/02 , C25F7/00 , H01L21/2885 , H01L21/3212 , H01L21/6715 , H01L21/76838 , H01L21/76877 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： The present invention provides a method and apparatus for plating a conductive material to a substrate and also modifying the physical properties of a conductive film (18b, 18c) while the substrate is being plated. The present invention further provides a method and apparatus that plates a conductive material on a workpiece surface in a "proximity" plating manner while a pad type material or other fixed feature is making contact with the workpiece surface in a "cold worked" manner. In this manner, energy stored in the cold worked regions (19b, 19c) of the plated layer is used to accelerate and enhance micro-structural recovery and growth. Thus, large grain size is obtained in the plated material at a lower annealing temperature and a shorter annealing time.
摘要翻译：本发明提供了一种用于将导电材料电镀到基底上的方法和装置，并且还在电镀衬底时修饰导电膜（18b，18c）的物理性能。本发明还提供了一种方法和装置，其以“接近”电镀方式在工件表面上平板化导电材料，同时衬垫型材料或其它固定特征以“冷加工”方式与工件表面接触。以这种方式，存储在镀层的冷加工区域（19b，19c）中的能量用于加速和增强微结构回收和生长。因此，在较低的退火温度和较短的退火时间下，在镀覆材料中获得大的晶粒尺寸。

83. 发明申请

WO00053371A1 SECONDARY DUAL PURPOSE STATION FOR WORKPIECE POLISHING MACHINE 审中-公开
标题翻译：工程抛光机二次双用途站
公开(公告)号：WO00053371A1
公开(公告)日：2000-09-14
申请号：PCT/US2000/005870
申请日：2000-03-07
IPC分类号： B24B37/20 , B24B37/34 , B24B57/02 , B24D9/10 , B24B37/04 , B24B41/047
CPC分类号： B24B37/345 , B24B37/20 , B24B57/02 , B24D9/10
摘要： The present invention provides a dual purpose workpiece handoff station (22) for intermediately staging a semiconductor wafer (21), or other workpiece, being transferred between processing stations in, for example, a Chemical-Mechanical Planarization (CMP) machine. The handoff station (22) includes a workpiece processing surface (88); such as a polishing pad or buffing pad, defining a plurality of apertures (92, 94) for applying fluid, including water, chemicals, slurry, or vacuum, to the surface of a workpiece (21). In operation, a workpiece carrier (18) moves a polished wafer (21) from a primary polishing surface (16) to the handoff station (22), and polishes, buffs, or cleans the wafer (21) in the handoff station by rotating the wafer (21) and oscillating the wafer (27) across the handoff station polishing surface (88) while pressing the wafer (21) thereon.
摘要翻译：本发明提供了一种用于在例如化学机械平面化（CMP）机器中的处理站之间转移的半导体晶片（21）或其他工件的中间阶段的双用途工件切换站（22）。切换站（22）包括工件处理表面（88）; 例如抛光垫或抛光垫，其限定用于将包括水，化学品，浆料或真空的流体施加到工件（21）的表面的多个孔（92,94）。在操作中，工件托架（18）将抛光的晶片（21）从主抛光表面（16）移动到切换站（22），并通过旋转来抛光，抛光或清洁切换站中的晶片（21）晶片（21）并且在将晶片（21）压在其上的同时使晶片（27）摆动越过切换站抛光表面（88）。

84. 发明申请

WO1998015384A1 POLISHING PAD CONTOUR INDICATOR FOR MECHANICAL OR CHEMICAL-MECHANICAL PLANARIZATION 审中-公开
标题翻译：用于机械或化学机械平面化的抛光垫面指示器
公开(公告)号：WO1998015384A1
公开(公告)日：1998-04-16
申请号：PCT/US1997017799
申请日：1997-10-03
申请人： MICRON TECHNOLOGY, INC.
发明人： MICRON TECHNOLOGY, INC. , HENDERSON, Gary, O.
IPC分类号： B24B37/04
CPC分类号： B24B37/20 , B24B37/26
摘要： A contour indicator that visually indicates non-uniformities in the planarity of the planarizing surface of a polishing pad. In one embodiment of the invention, a polishing pad has a polishing body with a planarizing surface facing the wafer and a contour indicator embedded in the polishing body. The contour indicator is preferably the material of the polishing body dyed to a color or shade that is visually distinguishable from the polishing body. The contour indicator preferably has first and second sidewalls spaced apart from one another at the planarizing surface of the polishing body, and the contour indicator also has a cross-sectional shape so that the distance between the first and second sidewalls changes with increasing the depth within the pad. In operation, the distance between the first and second sidewalls of the contour indicator changes as material is removed from the planarizing surface, and the distance between the first and second sidewalls at the planarizing surface indicates the contour of the planarizing surface.
摘要翻译：轮廓指示器，其可视地表示抛光垫的平坦化表面的平坦度的不均匀性。在本发明的一个实施例中，抛光垫具有抛光体，其具有面向晶片的平坦化表面和嵌入抛光体中的轮廓指示器。轮廓指示器优选地是被抛光到颜色或阴影的抛光体的材料，其在视觉上可与抛光体相区别。轮廓指示器优选地具有在抛光体的平坦化表面处彼此间隔开的第一和第二侧壁，并且轮廓指示器还具有横截面形状，使得第一和第二侧壁之间的距离随着内部深度的增加而变化垫在操作中，轮廓指示器的第一和第二侧壁之间的距离随着材料从平坦化表面移除而变化，平坦化表面处的第一和第二侧壁之间的距离表示平坦化表面的轮廓。

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