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61. 发明申请

WO2008116285A1 COATING REMOVAL FROM VANE RINGS VIA TUMBLE STRIP 审中-公开
标题翻译：从VANE环上涂抹去除薄带
公开(公告)号：WO2008116285A1
公开(公告)日：2008-10-02
申请号：PCT/CA2008/000437
申请日：2008-03-07
申请人： PRATT & WHITNEY CANADA CORP. , TOPA, Robert
发明人： TOPA, Robert
IPC分类号： C23F1/44 , C23F1/20 , F01D5/12
CPC分类号： C23F1/44 , B24B31/00 , F01D5/005 , F05D2230/80 , F05D2230/90
摘要： A method of removing a coating layer from a gas turbine component (20), including a step of applying both mechanical and chemical actions in a tumble stripping process (10) to the coating layer of the gas turbine component (20), wherein the gas turbine component (20) is bathed in an acid solution (24) while being rubbed by a plurality of hard media elements (26) in a tumbling motion.
摘要翻译：一种从燃气轮机部件（20）去除涂层的方法，包括在转鼓剥离工艺（10）中将机械和化学作用施加到燃气轮机部件（20）的涂层上的步骤，其中气体涡轮机部件（20）被沐浴在酸性溶液（24）中，同时以滚动运动被多个硬介质元件（26）摩擦。

62. 发明申请

WO2007024556A3 METHODS AND COMPOSITIONS FOR ACID TREATMENT OF A METAL SURFACE 审中-公开
标题翻译：用于酸处理金属表面的方法和组合物
公开(公告)号：WO2007024556A3
公开(公告)日：2007-08-09
申请号：PCT/US2006031786
申请日：2006-08-15
申请人： HOUGHTON METAL FINISHING COMPA , BASALY MORES
发明人： BASALY MORES
IPC分类号： C23F1/20 , C23F1/16 , C23F3/03 , C23G1/12
CPC分类号： C23F1/20 , C11D3/042 , C11D3/046 , C11D3/2082 , C11D11/0029 , C23F1/16 , C23F3/03 , C23G1/125 , C25D11/16 , Y10T428/12993
摘要： The invention relates to compositions and methods that are useful in etching a metal surface. In particular, the invention relates to novel acid compositions and methods of using such compositions in etching a metal surface, preferably an aluminum surface prior to anodizing to dissolve impurities, imperfections, scale, and oxide. The compositions are effective in maintaining their etching capacity and in removing smut produced by the etching of a surface as well as in general cleaning.
摘要翻译：本发明涉及用于蚀刻金属表面的组合物和方法。特别地，本发明涉及新的酸组合物和在阳极氧化之前蚀刻金属表面，优选铝表面以溶解杂质，不完美，氧化皮和氧化物的方法。该组合物在保持其蚀刻能力以及通过蚀刻表面而产生的杂质以及通常的清洁方面是有效的。

63. 发明申请

WO2005022592A2 NOVEL AQUEOUS BASED METAL ETCHANT 审中-公开
标题翻译：新型水性金属蚀变剂
公开(公告)号：WO2005022592A2
公开(公告)日：2005-03-10
申请号：PCT/US2004026921
申请日：2004-08-19
申请人： ARCH SPEC CHEM INC
发明人： GONZALEZ FRANK , KNEER EMIL , ELDERKIN MICHELLE , LEON VINCE
IPC分类号： C23F1/20 , C23F1/44 , H01L21/3213 , H01L21/60 , H01L
CPC分类号： H01L21/32134 , C23F1/20 , C23F1/44 , H01L24/11 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01067 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/19041
摘要： The present invention provides an aluminum etchant solution for etching an aluminum surface in the presence of solder bumps. The etchant solution includes about 42% to about 80% phosphoric acid; about 0.1% to about 6% nitric acid; about 5% to about 40% acetic acid; about 0.0005% to about 5% of an amine oxide surfactant; about 0.1% to about 8% of a Pb solubilizing additive; and about 5 to about 25% de-ionized water; wherein the solder bumps are substantially phosphate free after the etching. Also provided is a process for etching an exposed aluminum surface in a semiconductor structure in the presence of solder bumps including the steps of: contacting the exposed aluminum surface with the etchant solution; rinsing the semiconductor structure with de-ionized water; and drying the semiconductor structure to remove residual water; wherein the solder bumps are substantially phosphate free after the etching.
摘要翻译：本发明提供了一种用于在存在焊料凸块的情况下蚀刻铝表面的铝蚀刻剂溶液。蚀刻剂溶液包括约42％至约80％的磷酸; 约0.1％至约6％的硝酸; 约5％至约40％乙酸; 约0.0005％至约5％的氧化胺表面活性剂; 约0.1％至约8％的Pb增溶添加剂; 和约5至约25％的去离子水; 其中在蚀刻之后，焊料凸块基本上不含磷酸盐。还提供了一种用于在存在焊料凸块的情况下蚀刻半导体结构中的暴露的铝表面的方法，包括以下步骤：使暴露的铝表面与蚀刻剂溶液接触; 用去离子水冲洗半导体结构; 并干燥半导体结构以除去残留水; 其中在蚀刻之后，焊料凸块基本上不含磷酸盐。

64. 发明申请

WO02010480A2 ETCHING COMPOSITION AND USE THEREOF WITH FEEDBACK CONTROL OF HF IN BEOL CLEAN 审中-公开
标题翻译：蚀刻组合物及其在BEO清洁中的HF反馈控制的应用
公开(公告)号：WO02010480A2
公开(公告)日：2002-02-07
申请号：PCT/US2001/023905
申请日：2001-07-30
IPC分类号： C09K13/08 , C23F1/18 , C23F1/20 , G03F7/42 , H01L21/02 , H01L21/306 , H01L21/3213 , C23G1/00
CPC分类号： H01L21/02071 , C09K13/08 , C11D3/3942 , C11D3/3947 , C11D7/08 , C11D11/0047 , C23F1/00 , C23F1/18 , C23F1/20 , G03F7/423 , G03F7/426 , H01L21/02052 , H01L21/02063
摘要： A process for providing an aqueous back-end-of-line (BEOL) clean with feed-back control to monitor the active component of HF in the clean, for a wiring/interconnect of a reactive ion etched semiconductor device, comprising: subjecting the reactive ion etched semiconductor device to a post metal RIE clean using an etchant composition comprising about 0.01 to about 15 percent by weight of sulfuric acid; about 0.1 to about 100 ppm of a fluoride containing compound; and a member selected from the group consisting of about 0.01 to about 20 percent by weight of hydrogen peroxide or about 1 to about 30 ppm of ozone, comprising: a) mixing water, sulfuric acid and hydrogen peroxide in a mixing tank; b) mixing HF directly into the mixing tank or adding HF into a separate vessel for wafer processing, either before, during or after the mixture water, sulfuric acid and hydrogen peroxide as a mixture is transported to the separate tank for wafer processing; c) taking a sample comprising HR from the mixing tank or HF from the wafer processing tank and sending the sample through a feedback loop; d) comprising the sample to a standard dilute solution of HF to obtain a value of HF concentration in the sample; e) inputting the value to a tank tool recipe control to cause any needed adjustment in concentration of HF to a predetermined range, either in the mixing tank or the wafer processing vessel; and f) subjecting the wiring/interconnect of the semiconductor device to etching by the etchant composition to remove sidewall polymer, polymer rails and via residue without etching conductive materials during removal of sidewall polymer, polymer rails, and via residue.
摘要翻译：一种用于提供具有反馈控制的水性后端（BEOL）清洁的方法，用于监测清洁中的HF的有源分量，用于反应离子蚀刻半导体器件的布线/互连，包括：使用包含约0.01至约15重量％的硫酸的蚀刻剂组合物将反应离子蚀刻的半导体器件转化为后金属RIE清洁; 约0.1至约100ppm的含氟化合物; 和选自约0.01至约20重量％的过氧化氢或约1至约30ppm的臭氧的成员，其包括：a）在混合罐中混合水，硫酸和过氧化氢; b）将HF直接混合到混合罐中或将HF加入到用于晶片加工的单独的容器中，在混合物之前，期间或之后，将混合物中的硫酸和过氧化氢输送到用于晶片处理的单独的罐中; c）从混合罐或HF从晶片处理槽中取出包含HR的样品，并通过反馈回路发送样品; d）将样品包含到标准稀释的HF溶液中以获得样品中HF浓度的值; e）将所述值输入到罐工具配方控制中，以使所述HF的浓度在所述混合罐或所述晶片处理容器中进行任何所需的HF浓度调整至预定范围; 以及f）在除去侧壁聚合物，聚合物轨道和通孔残留物之前，通过蚀刻剂组合物对半导体器件的布线/互连线进行蚀刻以去除侧壁聚合物，聚合物轨道和通孔残留物而不蚀刻导电材料。

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