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    • 49. 发明申请
    • PYROLYTIC CHEMICAL VAPOR DEPOSITION OF SILICONE FILMS
    • 硅胶膜的热塑性化学气相沉积
    • WO99004911A1
    • 1999-02-04
    • PCT/US1998/015560
    • 1998-07-27
    • B05D7/24C08F2/46C09D4/00C23C16/30C23C16/40C23C16/44C23C16/50G02B6/13G11B7/254G11B7/2542
    • B05D1/60B05D1/62C09D4/00C23C16/30C23C16/44C23C16/50G11B7/254G11B7/2542C08G77/04
    • Provided are pyrolytic chemical vapor deposition techniques for producing thin silicone-like films by way of processes that eliminate electron impact, ion bombardment, and UV irradiation events. To form a silicone film on a surface of a structure in accordance with the invention, the structure surface is exposed to a substantially electrically neutral reactive gaseous phase that includes organosilicon molecular fragments, while the structure surface is maintained substantially at a temperature lower than that of the reactive gaseous phase. An organosilicon compound is exposed to a pyrolyzing environment, where the conditions of the pyrolyzing environment are characterized as producing, in the vicinity of the structure surface, a substantially electrically neutral reactive gaseous phase that includes organosilicon molecular fragments. The structure surface is maintained substantially at a temperature lower than that of the pyrolyzing environment. A plasma environment can be provided simultaneously with the pyrolyzing environment, and can be further provided before or after the pyrolyzing environment. Silicone films of the invention are mechanically robust, environmentally stable, and photosensitive.
    • 提供了通过消除电子撞击,离子轰击和UV照射事件的方法来生产薄硅氧烷膜的热解化学气相沉积技术。 为了在根据本发明的结构的表面上形成硅酮膜,结构表面暴露于包括有机硅分子片段的基本上电中性的反应性气相,而结构表面基本保持在低于 反应性气相。 有机硅化合物暴露于热解环境,其中热解环境的条件被表征为在结构表面附近产生包括有机硅分子片段的基本上电中性的反应性气相。 结构表面基本保持在低于热解环境的温度。 可以与热解环境同时提供等离子体环境,并且可以在热解环境之前或之后进一步提供。 本发明的硅氧烷膜具有机械稳固性,环境稳定性和光敏性。