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    • 47. 发明申请
    • ARRANGEMENT FOR REDUCING CONTAMINATION IN A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 减少微波投影曝光装置污染的装置
    • WO2016113113A1
    • 2016-07-21
    • PCT/EP2015/081412
    • 2015-12-30
    • CARL ZEISS SMT GMBHHARTJES, JoachimGRUNER, Toralf
    • HARTJES, JoachimGRUNER, Toralf
    • G03F7/20
    • G03F7/70916G03F7/70033H05G2/005H05G2/008
    • The invention relates to an arrangement for reducing contamination in a microlithographic projection exposure apparatus, wherein the projection exposure apparatus is designed for operation in the EUV and comprises an illumination device, wherein during the operation of the projection exposure apparatus EUV light generated by a plasma excitation of a target material brought about by a first laser light source enters the illumination device via an intermediate focus (IF). The arrangement comprises a second laser light source (140), which directs directional electromagnetic radiation into a region adjoining the intermediate focus (IF) within the illumination device, wherein said second laser light source (140) is designed in such a way that the directional electromagnetic radiation of the second laser light source (140) brings about an evaporation or plasma excitation for at least part of target material that has entered said region during the operation of the projection exposure apparatus.
    • 本发明涉及一种用于减少微光刻投影曝光装置中的污染的装置,其中投影曝光装置被设计为在EUV中操作并且包括照明装置,其中在投影曝光装置的操作期间由等离子体激发产生的EUV光 由第一激光光源引起的目标材料经由中间焦点(IF)进入照明装置。 该装置包括第二激光源(140),其将定向电磁辐射引导到与照明装置内的中间聚焦(IF)相邻的区域中,其中所述第二激光源(140)被设计成使得定向 第二激光光源(140)的电磁辐射在投影曝光装置的操作期间对已经进入所述区域的目标材料的至少一部分产生蒸发或等离子体激发。
    • 49. 发明申请
    • METHOD FOR OPERATING A PROJECTION EXPOSURE TOOL AND CONTROL APPARATUS
    • 投影曝光工具和控制装置的操作方法
    • WO2012031765A2
    • 2012-03-15
    • PCT/EP2011/004535
    • 2011-09-08
    • CARL ZEISS SMT GMBHGERHARD, MichaelDÖRBRAND, BerndGRUNER, Toralf
    • GERHARD, MichaelDÖRBRAND, BerndGRUNER, Toralf
    • G03F7/20
    • G03F7/70191G03F7/70266G03F7/706G03F7/70833G03F7/70891
    • A method for operating a projection exposure tool (10) for microlithography is provided. The projection exposure tool (10) comprises an optical system (24; 18) which comprises a number of optical elements (26) which, during an imaging process, convey electromagnetic radiation (16, 16a, 16b, 16c), all of the surfaces of the optical elements (26) interacting with the electromagnetic radiation (16) during the imaging process forming an overall optical surface of the optical system (24; 18). The method comprises the steps: determining respective individual thermal expansion coefficients (52) at at least two different locations of the overall optical surface, calculating a change to an optical property of the optical system (24; 18) brought about by heat emission of the electromagnetic radiation (16, 16a, 16b, 16c) during the imaging process upon the basis of the thermal expansion coefficients (52), and imaging mask structures into an image plane (34) by means of the projection exposure tool (10) with adaptation of the imaging characteristics of the projection exposure tool (10) such that the calculated change to the optical property is at least partially compensated.
    • 提供了一种用于操作用于微光刻的投影曝光工具(10)的方法。 投影曝光工具(10)包括光学系统(24; 18),该光学系统包括多个光学元件(26),其在成像过程期间传送电磁辐射(16,16a,16b,16c),所有表面 的光学元件(26)在成像过程中与电磁辐射(16)相互作用,形成光学系统(24; 18)的整个光学表面。 该方法包括以下步骤:确定在整个光学表面的至少两个不同位置处的各自的热膨胀系数(52),计算由所述光学系统的热发射引起的光学系统(24; 18)的光学特性的变化 基于热膨胀系数(52)在成像过程期间的电磁辐射(16,16a,16b,16c),以及借助于具有适应性的投影曝光工具(10)将掩模结构成像到图像平面(34) 的投影曝光工具(10)的成像特性,使得计算出的对光学特性的改变至少部分地被补偿。