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    • 31. 发明申请
    • MACHINING WORKPIECES
    • 加工工作
    • WO0047365A2
    • 2000-08-17
    • PCT/FI0000088
    • 2000-02-08
    • ROBOTIC TECHNOLOGY SYSTEMS FINRAAMI JUHA
    • RAAMI JUHA
    • B23Q1/03B23Q1/66B23Q3/06B23Q3/15B25J9/00B23Q3/00
    • B23Q1/66B23Q1/03B23Q3/06B23Q3/15B25J9/00
    • The present invention relates to a machining arrangement and a method of maching. A robot (1) capable of performing movements in a three dimensional space is provided with a drive unit (2), wherein the drive unit is arranged to rotate a rotating tool (14) used for machining of the workpieces. A control unit (4) is arranged to control the operation of said robot and drive unit. A workbench (10) is used for holding the workpiece to be machined, said workbench comprising a frame (10') and a turntable (8) attached pivotally to said frame. The arrangement is such that the different surfaces of the turntable can be turned to face the working area of the robot (1). Clamping means are also provided for attaching the workpiece (3) on the surface of said turntable.
    • 本发明涉及加工装置和加工方法。 能够在三维空间中进行运动的机器人(1)设置有驱动单元(2),其中驱动单元布置成旋转用于加工工件的旋转工具(14)。 控制单元(4)被布置成控制所述机器人和驱动单元的操作。 工作台(10)用于保持要加工的工件,所述工作台包括框架(10')和枢转地附接到所述框架的转盘(8)。 这种布置使得转台的不同表面可以转动以面对机器人(1)的工作区域。 还提供夹紧装置用于将工件(3)附接在所述转台的表面上。
    • 32. 发明申请
    • METHOD AND APPARATUS FOR IMPROVED RETENTION OF A SEMICONDUCTOR WAFER WITHIN A SEMICONDUCTOR WAFER PROCESSING SYSTEM
    • 用于改善在半导体波长处理系统中的半导体波形的保持的方法和装置
    • WO98057371A1
    • 1998-12-17
    • PCT/US1998/011877
    • 1998-06-08
    • B23Q3/15B65G49/07H01L21/683H01L21/68
    • H01L21/6833Y10T279/23
    • Method and apparatus for retaining a semiconductor wafer upon a pedestal within semiconductor wafer processing equipment. An electrostatic chuck contains a wafer support having a surface. Embedded beneath the surface is a number of electrodes defining a number of chucking zones. The electrodes are energized by a number of non-zero voltages thereby creating a variable, non-zero chucking force in each of the chucking zones. The method of retaining a substrate to a substrate support consists of biasing at least one of the electrodes with a first voltage of a first magnitude and biasing each previously unbiased electrode with a voltage of unequal magnitude of the initially biased electrode and every other previously unbiased electrode such that a non-zero chucking force exists in every zone. Wafer chucking zones of differing force improve uniformity of heat transfer gas layer distribution.
    • 将半导体晶片保持在半导体晶片处理设备内的基座上的方法和装置。 静电卡盘包含具有表面的晶片支架。 嵌入在表面下方的是定义多个夹持区域的多个电极。 电极由多个非零电压激励,从而在每个夹持区域中产生可变的非零夹紧力。 将衬底保持到衬底支撑件的方法包括:利用第一大小的第一电压偏压至少一个电极,并且利用初始偏置电极和每个其它先前无偏置电极的不等大小的电压来偏置每个先前无偏置的电极 使得每个区域中都存在非零夹紧力。 不同力的晶片夹紧区域提高传热气体层分布的均匀性。