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    • 40. 发明申请
    • APPARATUS AND METHOD TO OPTIMIZE STT-MRAM SIZE AND WRITE ERROR RATE
    • 优化STT-MRAM尺寸和写错误率的装置和方法
    • WO2015047337A1
    • 2015-04-02
    • PCT/US2013/062421
    • 2013-09-27
    • INTEL CORPORATION
    • MANIPATRUNI, SasikanthNIKONOV, Dmitri E.YOUNG, Ian A.
    • G11C11/15
    • G11C13/0069G11C7/12G11C11/16G11C11/1653G11C11/1655G11C11/1673G11C11/1675G11C11/1693G11C11/5607G11C2213/79G11C2213/82
    • Described is an apparatus comprising: a first select-line; a second select-line; a bit-line; a first bit-cell including a resistive memory element and a transistor, the first bit-cell coupled to the first select-line and the bit-line; a buffer with an input coupled to the first select-line and an output coupled to the second select-line; and a second bit-cell including a resistive memory element and a transistor, the second bit-cell coupled to the second select-line and the bit-line. Described is a magnetic random access memory (MRAM) comprising: a plurality of rows, each row including: a plurality of bit-cells, each bit-cell having an MTJ device coupled to a transistor; and a plurality of buffers, each of which to buffer a select-line signal for a group of bit-cells among the plurality of bit-cells; and a plurality of bit-lines, each row sharing a single bit-line among the plurality of bit-cells in that row.
    • 描述了一种装置,包括:第一选择线; 第二选择线; 有点线 第一位单元,包括电阻存储元件和晶体管,所述第一位单元耦合到所述第一选择线和所述位线; 具有耦合到第一选择线的输入和耦合到第二选择线的输出的缓冲器; 以及包括电阻存储元件和晶体管的第二位单元,所述第二位单元耦合到所述第二选择线和所述位线。 描述了一种磁性随机存取存储器(MRAM),包括:多行,每行包括:多个位单元,每个位单元具有耦合到晶体管的MTJ器件; 以及多个缓冲器,每个缓冲器用于缓冲所述多个位单元中的一组位单元的选择线信号; 和多个位线,每行在该行中的多个位单元之中共享单个位线。