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    • 1. 发明申请
    • SILICON CONTROLLED RECTIFIER WITH PROPAGATING TRIGGER
    • 硅酮控制整流器与传播触发器
    • WO2017048240A1
    • 2017-03-23
    • PCT/US2015/050221
    • 2015-09-15
    • INTEL CORPORATIONPOON, Steven S.JACK, Nathan D.
    • POON, Steven S.JACK, Nathan D.
    • H02H7/12
    • H01L27/0262H01L29/87
    • A silicon controlled rectifier may be used to protect an integrated circuit from excessive voltage encountered during an electrostatic discharge (ESD) event. An ESD protected circuit may be conductively coupled to an anode of a first silicon controlled rectifier (SCR) and to an anode and gate of a second SCR disposed proximate and on the same substrate as the first SCR. A trigger current may be used to trigger and latch-up the first SCR in the event of an ESD. A stray current may develop in the substrate responsive to the first SCR latching-up. This stray current may cause a charge accumulation at an N-well (i.e., gate) of the second SCR and may be used to sympathetically trigger and latch-up the second SCR in the absence of an externally supplied trigger current to the second SCR.
    • 可以使用可控硅整流器来保护集成电路免于在静电放电(ESD)事件期间遇到的过大的电压。 ESD保护电路可以导电耦合到第一可控硅整流器(SCR)的阳极以及布置在与第一SCR相邻并在同一衬底上的第二SCR的阳极和栅极。 在ESD的情况下,可以使用触发电流来触发和锁存第一个SCR。 响应于第一SCR闭锁,衬底中会产生杂散电流。 该杂散电流可能导致第二SCR的N阱(即,栅极)处的电荷累积,并且可以在没有外部提供的触发电流到第二SCR的情况下用于同时触发和锁存第二SCR。