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21. 发明申请

WO2011078625A3 물방울의 표면부착 특성 조절이 가능한 알루미늄의 표면 처리방법 审中-公开
公开(公告)号：WO2011078625A3
公开(公告)日：2011-06-30
申请号：PCT/KR2010/009331
申请日：2010-12-24
申请人： 고려대학교 산학협력단 , 이규백 , 이원배 , 박보기
发明人： 이규백 , 이원배 , 박보기
IPC分类号： C25D11/04 , C23F1/02 , C25D11/18 , C23F1/20
摘要： 본 발명은 물방울의 표면부착 특성 조절이 가능한 알루미늄의 표면 처리방법에 관한 것으로, 보다 구체적으로는 알루미늄의 표면을 단계적 양극 산화 기법에 의하여 다중 미세구조로 형성하고 그 표면에 초소수성 개질을 통하여 양극 산화 코팅의 기존 장점을 모두 살리면서 이에 더하여 초소수적 점착 제어 특성이 부여되도록 알루미늄을 표면 처리하는 방법에 관한 것이다. 본 발명에 따르면, 양극 산화 피막 형성을 단계적으로 조절하고 자기 조립 단분자막을 형성하여 초소수성 점착특성의 조절이 가능한 알루미늄 표면 처리방법이 제공될 수 있어 다양한 기능성을 지닌 고부가가치의 알루미늄 제공이 가능하다.

22. 发明申请

WO2011010872A3 ETCHANT COMPOSITION FOR FORMING A METAL LINE 审中-公开
标题翻译：用于形成金属线的蚀刻组合物
公开(公告)号：WO2011010872A3
公开(公告)日：2011-04-21
申请号：PCT/KR2010004782
申请日：2010-07-21
申请人： DONGWOO FINE CHEM CO LTD , LIM MIN-KI , LEE SUCK-JUN , JANG SANG-HOON , PARK YOUNG-CHUL
发明人： LIM MIN-KI , LEE SUCK-JUN , JANG SANG-HOON , PARK YOUNG-CHUL
IPC分类号： C23F1/44 , C23F1/20 , C23F1/26
CPC分类号： C23F1/20 , C23F1/26 , C23F1/44 , H01L21/32134
摘要： The present invention relates to an etchant composition for forming a metal line. The etchant composition can wet-etch, in a batch, a single-layer film formed of one or more metals selected from a group consisting of titanium, titanium alloy, aluminum, and an aluminum alloy, or a multi-layer film including a double-layer film, thus etching a large number of substrates and significantly improving the productivity of the etching process. Further, the etchant composition of the present invention has a high etching rate, prevents damage to a lower film and equipment, enables uniform etching between a pattern and an area without a pattern, provides excellent etching characteristics, eliminates the need for expensive equipment, is advantageous when used for large display devices, and provides remarkable economical advantages.
摘要翻译：本发明涉及用于形成金属线的蚀刻剂组合物。蚀刻剂组合物可以一次性地湿法蚀刻由选自钛，钛合金，铝和铝合金的一种或多种金属形成的单层膜，或者包含双重层的多层膜从而蚀刻大量基板并显着提高蚀刻工艺的生产率。此外，本发明的蚀刻剂组合物具有高蚀刻速率，防止对下膜和设备的损害，能够在图案和不带图案的区域之间进行均匀蚀刻，提供优异的蚀刻特性，消除了昂贵的设备的需要，是有利于大型显示设备的使用，并提供了显着的经济优势。

23. 发明申请

WO2010021769A1 METHOD FOR REMOVING BRAZING RESIDUES FROM ALUMINUM ARTICLES 审中-公开
标题翻译：从铝制品中去除剪切残留物的方法
公开(公告)号：WO2010021769A1
公开(公告)日：2010-02-25
申请号：PCT/US2009/042552
申请日：2009-05-01
申请人： CARRIER CORPORATION , JAWOROWSKI, Mark, R. , ESFORMES, Jack, Leon , MAGDEFRAU, Neal , TARAS, Michael, F.
发明人： JAWOROWSKI, Mark, R. , ESFORMES, Jack, Leon , MAGDEFRAU, Neal , TARAS, Michael, F.
IPC分类号： C25F1/02 , C25F3/20 , C23F1/20
CPC分类号： C23G1/24 , C23G5/00 , C25F1/04
摘要： In a method of preparing an aluminum surface, flux is applied to the aluminum surface and the aluminum surface is brazed. Residual flux and metal oxides are removed from the aluminum surface using an aqueous fluid having a pH between about 5 and about 9.
摘要翻译：在制备铝表面的方法中，将焊剂施加到铝表面并且铝表面被钎焊。使用pH在约5至约9之间的水性流体，从铝表面除去残余通量和金属氧化物。

24. 发明申请

WO2005013321A3 ETCHING OF SOLAR CELL MATERIALS 审中-公开
标题翻译：太阳能电池材料的蚀刻
公开(公告)号：WO2005013321A3
公开(公告)日：2006-02-02
申请号：PCT/US2004023198
申请日：2004-07-19
申请人： SUNPOWER CORP , ROSE DOUGLAS H , URALWONG PONGSTHORN , SMITH DAVID D
发明人： ROSE DOUGLAS H , URALWONG PONGSTHORN , SMITH DAVID D
IPC分类号： H01L20060101 , H01L31/00 , H01L31/18 , C23F1/00 , C23F1/18 , C23F1/20 , C23F1/34 , C23F1/36
CPC分类号： H01L31/022425 , H01L31/02008 , H01L31/18
摘要： A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer in the solar cell is etched (506) without substantially etching a topmost metallic layer comprising tin. For example, an etchant comprising sulfuric acid and hydrogen peroxide may be employed to etch the copper layer selective to the tin layer. A particular example of the aforementioned etchant is a Co-Bra Etch® etchant modified to comprise about 1% by volume of sulfuric acid, about 4% by volume of phosphoric acid, and about 2% by volume of stabilized hydrogen peroxide. In one embodiment, an aluminum layer in the solar cell is etched (514) without substantially etching the tin layer. For example, an etchant comprising potassium hydroxide may be employed to etch the aluminum layer without substantially etching the tin layer.
摘要翻译：通过蚀刻其一个或多个层而不基本上蚀刻太阳能电池的另一层来制造太阳能电池。在一个实施例中，在基本上蚀刻包含锡的最顶层的金属层的同时蚀刻太阳能电池中的铜层（506）。例如，可以使用包含硫酸和过氧化氢的蚀刻剂来蚀刻对锡层有选择性的铜层。上述蚀刻剂的一个具体实例是改性为包含约1体积％的硫酸，约4体积％的磷酸和约2体积％的稳定的过氧化氢的Co-Bra Etch蚀刻剂。在一个实施例中，蚀刻（514）太阳能电池中的铝层而基本上不蚀刻锡层。例如，可以使用包含氢氧化钾的蚀刻剂来蚀刻铝层而基本上不蚀刻锡层。

25. 发明申请

WO0210480A3 ETCHING COMPOSITION AND USE THEREOF WITH FEEDBACK CONTROL OF HF IN BEOL CLEAN 审中-公开
标题翻译：清洁环境中的HF反馈控制组合物及其使用方法
公开(公告)号：WO0210480A3
公开(公告)日：2002-10-31
申请号：PCT/US0123905
申请日：2001-07-30
申请人： INFINEON TECHNOLOGIES CORP
发明人： RAMACHANDRAN RAVIKUMAR , PENNER KLAUS , NICHTERWITZ MARION , NITSCHKE CHRISTIANE , KRAUSE HOLGE
IPC分类号： C09K13/08 , C23F1/18 , C23F1/20 , G03F7/42 , H01L21/02 , H01L21/306 , H01L21/3213 , C23G1/00 , G01N1/00
CPC分类号： H01L21/02071 , C09K13/08 , C11D3/3942 , C11D3/3947 , C11D7/08 , C11D11/0047 , C23F1/00 , C23F1/18 , C23F1/20 , G03F7/423 , G03F7/426 , H01L21/02052 , H01L21/02063
摘要： A process for providing an aqueous back-end-of-line (BEOL) clean with feed-back control to monitor the active component of HF in the clean, for a wiring/interconnect of a reactive ion etched semiconductor device, comprising: subjecting the reactive ion etched semiconductor device to a post metal RIE clean using an etchant composition comprising about 0.01 to about 15 percent by weight of sulfuric acid; about 0.1 to about 100 ppm of a fluoride containing compound; and a member selected from the group consisting of about 0.01 to about 20 percent by weight of hydrogen peroxide or about 1 to about 30 ppm of ozone, comprising: a) mixing water, sulfuric acid and hydrogen peroxide in a mixing tank; b) mixing HF directly into the mixing tank or adding HF into a separate vessel for wafer processing, either before, during or after the mixture water, sulfuric acid and hydrogen peroxide as a mixture is transported to the separate tank for wafer processing; c) taking a sample comprising HR from the mixing tank or HF from the wafer processing tank and sending the sample through a feedback loop; d) comprising the sample to a standard dilute solution of HF to obtain a value of HF concentration in the sample; e) inputting the value to a tank tool recipe control to cause any needed adjustment in concentration of HF to a predetermined range, either in the mixing tank or the wafer processing vessel; and f) subjecting the wiring/interconnect of the semiconductor device to etching by the etchant composition to remove sidewall polymer, polymer rails and via residue without etching conductive materials during removal of sidewall polymer, polymer rails, and via residue.
摘要翻译：一种用于反馈控制以提供水性生产线后端（BEOL）清洁的方法，用于监视清洁过程中HF的活性成分，用于反应离子蚀刻半导体器件的布线/互连，包括：使所述使用包含约0.01重量％至约15重量％的硫酸的蚀刻剂组合物对所述反应离子蚀刻的半导体器件进行后金属RIE清洁; 约0.1至约100ppm的含氟化合物; 和选自约0.01至约20重量％的过氧化氢或约1至约30ppm的臭氧的成员，包括：a）在混合罐中混合水，硫酸和过氧化氢; b）将HF直接混入混合罐或将HF加入单独的容器中用于晶片处理，或者在混合物水之前，之中或之后，将硫酸和过氧化氢混合物输送到单独的罐中进行晶片处理; c）从混合罐中取出包含HR的样品或从晶片处理罐取出HF，并通过反馈回路发送样品; d）将样品包含在HF的标准稀释溶液中以获得样品中HF浓度的值; e）将该值输入到罐工具配方控制中，以在混合罐或晶圆处理容器中引起HF浓度到预定范围的任何需要的调整; 以及f）在除去侧壁聚合物，聚合物轨道和通孔残留物期间，不蚀刻导电材料，通过蚀刻剂组合物对半导体器件的布线/互连进行蚀刻以去除侧壁聚合物，聚合物轨道和通孔残余物。

26. 发明申请

WO01067496A1 METHOD FOR OPENING KEY PATTERNS ON SEMICONDUCTOR 审中-公开
标题翻译：在半导体上打开关键图案的方法
公开(公告)号：WO01067496A1
公开(公告)日：2001-09-13
申请号：PCT/KR2001/000287
申请日：2001-02-26
IPC分类号： H01L21/027 , C23F1/20 , C23F1/26 , H01L21/306 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/30604 , C23F1/20 , C23F1/26 , H01L21/31111 , H01L21/32134
摘要： The present invention relates to methods for opening key pattern, and more particularly, to opening methods that can etch an opaque part formed on key pattern by injecting wet etchant using narrow and hollow tube with nanometer or micrometer diameter. The present invention reduces the number of processing steps for opening key patterns.
摘要翻译：本发明涉及用于打开键图案的方法，更具体地说，涉及通过使用具有纳米或微米直径的窄空心管注入湿蚀刻剂来蚀刻形成在键图案上的不透明部分的打开方法。本发明减少了打开键图案的处理步骤的数量。

27. 发明申请

WO99058256A1 LOW ETCH ALKALINE ZINCATE COMPOSITION AND PROCESS FOR ZINCATING ALUMINUM 审中-公开
标题翻译：低含量碱性锌酸盐组合物和铝锌合金工艺
公开(公告)号：WO99058256A1
公开(公告)日：1999-11-18
申请号：PCT/US1999/007453
申请日：1999-04-05
IPC分类号： B32B15/01 , C23C18/18 , C23C18/22 , C23C18/31 , C23F1/20 , C25D5/44 , G11B5/84 , B05D5/04 , B32B15/00
CPC分类号： C25D5/44 , C23C18/1651 , C23C18/1844 , C23C18/31 , C23C18/54 , C23F1/20
摘要： A method is provided for zincating aluminum substrates for metal plating thereon wherein the plated aluminum product has smoothness, dimensional integrity and increased production yield of the plated products. The substrates also have enhanced paramagnetic thermal stability of ENP coatings used on memory disk products. A zincate bath contains as additives Fe and NaNO3, and a chelator to chelate the iron, with a preferred iron chelator being Rochelle Salt and with the amount of Fe being controlled at a preferred concentration of 0.2 to 0.3 g/l. A preferred zincating method employs an etchant composition comprising HNO3, H2SO4 and H3PO4 to etch the aluminum substrate prior to zincating. Use of this etchant composition, either alone or with the zincate bath of the invention, is particularly effective for aluminum substrates which have been ground to a smoothness of less than 100 ANGSTROM . The etchant is non-aggressive and removes metal oxides formed by the grinding and annealing process to form the aluminum substrates used to fabricate the memory disks. The etchant also preserves the dimensional integrity of the substrate and prepares the surface for zincate deposition. It is highly preferred to use the etchant and zincate bath of the invention in the same metal plating process to provide an enhanced process and metal plated product. The etchant or zincating bath may also be used alone in other plating processes requiring these type substrate treatments.
摘要翻译：提供了一种用于镀锌铝基板以进行金属镀覆的方法，其中镀铝产品具有平滑度，尺寸完整性和提高的镀覆产品的生产成本。基板还具有增强的记忆盘产品上使用的ENP涂层的顺磁性热稳定性。锌酸盐浴包含添加剂Fe +和NaNO 3，螯合剂螯合铁，优选的铁螯合剂为罗谢尔盐，Fe 2+的量控制在0.2至0.3的优选浓度克/升。优选的锌化方法使用包含HNO 3，H 2 SO 4和H 3 PO 4的蚀刻剂组合物在锌化之前蚀刻铝基材。单独使用或与本发明的锌酸盐浴的这种蚀刻剂组合物的使用对于已被研磨成小于100安培的平滑度的铝基材特别有效。蚀刻剂是非侵蚀性的，并且去除通过研磨和退火工艺形成的金属氧化物以形成用于制造存储盘的铝基板。蚀刻剂还保留了基材的尺寸完整性，并为锌酸盐沉积制备了表面。在相同的金属电镀工艺中，非常优选使用本发明的蚀刻剂和锌酸盐浴来提供增强的工艺和金属镀覆的产品。蚀刻剂或锌化浴也可以单独用于需要这种类型的底物处理的其它电镀工艺中。

28. 发明申请

WO2022019339A1 金属部材、金属樹脂複合体、及び金属部材の製造方法审中-公开
公开(公告)号：WO2022019339A1
公开(公告)日：2022-01-27
申请号：PCT/JP2021/027416
申请日：2021-07-21
申请人：三井化学株式会社
发明人：島▲崎▼　絢也 , 住田　大樹
IPC分类号： C23F1/20 , B29C45/14 , B29C65/70 , B32B3/30 , B32B15/08 , B32B27/06
摘要：金属部材は、表面に樹枝状層が形成された領域を有する。前記領域の算術平均粗さＲａは、２０．０μｍ以下である。

29. 发明申请

WO2021222159A1 METHOD FOR PRODUCING OPTICAL ARTICLE WITH ANTI-REFLECTIVE SURFACE, AND OPTICAL ARTICLE WITH ANTI-REFLECTIVE SURFACE 审中-公开
公开(公告)号：WO2021222159A1
公开(公告)日：2021-11-04
申请号：PCT/US2021/029278
申请日：2021-04-27
申请人： GLINT PHOTONICS, INC.
发明人： KOZODOY, Peter , LLOYD, John
IPC分类号： G02B1/118 , G02B1/11 , B29C45/73 , C25D11/02 , C23F1/20
摘要： Methods for forming optical articles with antireflective nanostructured (ARN) surfaces. An aluminum layer is deposited or otherwise applied to the cavity of an injection mold tool. Sequential chemical treatments such as anodization and etching steps form an 5 ARN mold texture on the interior surface of the cavity. The ARN mold texture is a negative of a desired surface texture of the article. During injection molding, the desired ARN surface is thereby produced in the optical article.

30. 发明申请

WO2020110544A1 磁気ディスク用アルミニウム合金基板及びその製造方法、磁気ディスク用アルミニウム合金基盤及びその製造方法、ならびに、磁気ディスク及びその製造方法审中-公开
公开(公告)号：WO2020110544A1
公开(公告)日：2020-06-04
申请号：PCT/JP2019/041970
申请日：2019-10-25
申请人：株式会社UACJ , 古河電気工業株式会社
发明人：村田　拓哉 , 北脇　高太郎 , 米光　誠 , 畠山　英之 , 坂本　遼 , 太田　裕己
IPC分类号： G11B5/73 , C22C21/00 , C22F1/04 , C23C18/18 , C23C18/31 , C23C18/36 , C23F1/20 , G11B5/84 , C22F1/00
摘要：Ｆｅ：０．１～３．０ｍａｓｓ％、Ｃｕ：０．００５～１．０００ｍａｓｓ％、Ｚｎ：０．００５～１．０００ｍａｓｓ％を含有し、残部Ａｌ及び不可避不純物からなるアルミニウム合金からなり、外周面において、最長径１０μｍ以上の孔が２００個／ｍｍ２以下であることを特徴とする磁気ディスク用アルミニウム合金基板、これを用いた磁気ディスク用アルミニウム合金基盤及び磁気ディスク、ならびに、これらの製造方法。

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