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21. 发明申请

WO2012015594A1 MOLD SHAPE TO OPTIMIZE THICKNESS UNIFORMITY OF SILICON FILM 审中-公开
标题翻译：模具形状优化硅膜厚度均匀性
公开(公告)号：WO2012015594A1
公开(公告)日：2012-02-02
申请号：PCT/US2011043774
申请日：2011-07-13
申请人： 4CORNING INC 1 , COOK GLEN B , MAZUMDER PRANTIK , SUMAN BALRAM
发明人： COOK GLEN B , MAZUMDER PRANTIK , SUMAN BALRAM
IPC分类号： C30B11/00 , C30B15/00 , C30B19/06 , C30B29/06 , H01L31/18
CPC分类号： H01L31/182 , C30B15/007 , C30B15/06 , C30B29/06 , Y02E10/546 , Y02P70/521 , Y10T428/24479
摘要： A method of making a solid layer of a semiconducting material (140) involves selecting a mold (100) having a leading edge thickness (104) and a different trailing edge thickness (106) such that in respective plots of solid layer thickness versus effective submersion time for submersion of the leading and trailing edges into molten semiconducting material (120), a thickness of the solid layer adjacent to the leading and trailing edges are substantially equal. The mold is submersed into and withdrawn from the molten semiconducting material (120) to form a solid layer of semiconducting material over an external surface (102) of the mold.
摘要翻译：制备半导体材料（140）的固体层的方法涉及选择具有前缘厚度（104）和不同后缘厚度（106）的模具（100），使得在固体层厚度对有效浸没的各个图中将前缘和后缘浸入熔融半导体材料（120）的时间，与前缘和后缘相邻的固体层的厚度基本相等。模具浸没在熔融半导体材料（120）中并从熔融半导体材料（120）中取出，以在模具的外表面（102）上形成半导体材料的固体层。

22. 发明申请

WO2010132644A1 METHODS OF MAKING AN ARTICLE OF SEMICONDUCTING MATERIAL ON A MOLD COMPRISING PARTICLES OF A SEMICONDUCTING MATERIAL 审中-公开
标题翻译：在包含半导体材料颗粒的模具上制造半导体材料的方法
公开(公告)号：WO2010132644A1
公开(公告)日：2010-11-18
申请号：PCT/US2010/034674
申请日：2010-05-13
申请人： CORNING INCORPORATED , MAZUMDER, Prantik , POTAPENKO, Sergey , VENKATARAMAN, Natesan
发明人： MAZUMDER, Prantik , POTAPENKO, Sergey , VENKATARAMAN, Natesan
IPC分类号： C30B15/00 , C30B28/04 , C30B28/10 , C30B29/06
CPC分类号： C30B28/04 , C30B15/007 , C30B28/10 , C30B29/06
摘要： The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.
摘要翻译：本发明涉及制造由此形成的半导体材料制品和半导体材料制品的方法，例如可用于制造光伏电池的半导体材料制品。

23. 发明申请

WO2010056350A2 METHODS FOR CASTING BY A FLOAT PROCESS AND ASSOCIATED APPRATUSES 审中-公开
标题翻译：通过浮选工艺和相关规定进行铸造的方法
公开(公告)号：WO2010056350A2
公开(公告)日：2010-05-20
申请号：PCT/US2009/006114
申请日：2009-11-13
申请人： CARNEGIE MELLON UNIVERSITY , YDSTIE, Birger Erik , RANJAN, Sudhir , SUKUMAR, Balaji , SEETHARAMAN, Sridhar
发明人： YDSTIE, Birger Erik , RANJAN, Sudhir , SUKUMAR, Balaji , SEETHARAMAN, Sridhar
IPC分类号： C01B33/02 , B22D11/00 , B22D11/01 , B22D21/00
CPC分类号： B22D11/01 , C01B33/037 , C30B15/002 , C30B15/007 , C30B15/06 , C30B15/14 , C30B15/22 , C30B15/28 , C30B15/30 , C30B29/06 , C30B29/60 , C30B29/64 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： A method for producing a solid layer material (42), comprising providing (70) a first layer (30); providing (72) a second liquid layer (32) on the first layer (30); providing (74) a third liquid layer (34) on the second liquid layer (32), wherein the third liquid layer has a melting point that is higher than a melting point of the second liquid layer, and wherein the second liquid layer is between the first and third layers; cooling (76) a surface of the third liquid layer to a temperature less than the melting point of the third liquid layer; forming (78) the solid layer from the third liquid layer while cooling the third layer liquid; and removing (80) the solid layer.
摘要翻译：一种制备固体层材料（42）的方法，包括提供（70）第一层（30）; 在第一层（30）上提供（72）第二液体层（32）; 在所述第二液体层（32）上提供（74）第三液体层（34），其中所述第三液体层具有高于所述第二液体层的熔点的熔点，并且其中所述第二液体层在第一和第三层; 将第三液体层的表面冷却（76）至低于第三液体层的熔点的温度; 在冷却第三层液体的同时，从第三液体层形成（78）固体层; 并去除（80）固体层。

24. 发明申请

WO2010021967A1 CONTROLLING TRANSPORT OF GAS BORNE CONTAMINANTS ACROSS A RIBBON SURFACE 审中-公开
标题翻译：通过RIBBON表面控制气体污染物的运输
公开(公告)号：WO2010021967A1
公开(公告)日：2010-02-25
申请号：PCT/US2009/053991
申请日：2009-08-17
申请人： EVERGREEN SOLAR, INC. , HARVEY, David , HUANG, Weidong , REITSMA, Scott , LE, Minh, Sy
发明人： HARVEY, David , HUANG, Weidong , REITSMA, Scott , LE, Minh, Sy
IPC分类号： C30B15/00 , C30B29/06 , C30B29/60
CPC分类号： C30B29/06 , C30B15/007 , C30B15/14 , C30B29/64 , Y10T117/1036 , Y10T117/1044 , Y10T117/1068
摘要： A method of growing a ribbon crystal provides a crucible containing molten material and passes string through the molten material to grow the ribbon crystal. The method further directs gas flow around the ribbon crystal such that the gas flows down along the ribbon crystal toward the crucible.
摘要翻译：生长带状晶体的方法提供了一种含有熔融材料的坩埚，并将线穿过熔融材料以使带状晶体生长。该方法进一步引导气体流过带状晶体，使得气体沿着带状晶体朝向坩埚向下流动。

25. 发明申请

WO2008070458A1 SYSTEM AND METHOD OF FORMING A CRYSTAL 审中-公开
标题翻译：形成晶体的系统和方法
公开(公告)号：WO2008070458A1
公开(公告)日：2008-06-12
申请号：PCT/US2007/085359
申请日：2007-11-21
申请人： EVERGREEN SOLAR, INC. , HUANG, Weidong , HARVEY, David , WALLACE, Richard , SACHS, Emanuel , VAN GLABBEEK, Leo
发明人： HUANG, Weidong , HARVEY, David , WALLACE, Richard , SACHS, Emanuel , VAN GLABBEEK, Leo
IPC分类号： C30B15/00 , C30B15/10 , C30B29/06
CPC分类号： C30B15/005 , C30B15/002 , C30B15/007 , C30B15/10 , C30B15/24 , C30B29/06 , Y10T117/1044
摘要： A system for producing a crystal formed from a material with impurities has a crucible for containing the material. The crucible has, among other things, a crystal region for forming the crystal, an introduction region for receiving the material, and a removal region for removing a portion of the material. The crucible is configured to produce a generally one directional flow of the material (in liquid form) from the introduction region toward the removal region. This generally one directional flow causes the removal region to have a higher concentration of impurities than the introduction region.
摘要翻译：用于制造由具有杂质的材料形成的晶体的系统具有容纳该材料的坩埚。坩埚尤其具有用于形成晶体的晶体区域，用于接收材料的引入区域和用于去除材料的一部分的去除区域。坩埚被配置为产生从引入区域朝向移除区域的材料（液体形式）的大致一个方向的流动。这通常一个定向流使得去除区域具有比引入区域更高的杂质浓度。

26. 发明申请

WO2005104244A1 METHOD AND DEVICE FOR PRODUCING METAL FOILS 审中-公开
标题翻译：用于生产金属箔的方法和装置
公开(公告)号：WO2005104244A1
公开(公告)日：2005-11-03
申请号：PCT/NL2005/000310
申请日：2005-04-26
申请人： STICHTING ENERGIEONDERZOEK CENTRUM NEDERLAND , SCHÖNECKER, Axel, Georg , STEINBACH, Karl, Ingo
发明人： SCHÖNECKER, Axel, Georg , STEINBACH, Karl, Ingo
IPC分类号： H01L31/18
CPC分类号： C30B15/007
摘要： The invention relates to a method and device for producing metal foils using the foil-casting principle. The method comprises the steps of filling a casting frame with liquid metal, moving a substrate through the bottom of the casting frame, with the substrate belt being at a lower temperature than the melting point of the liquid metal in the bottom of the casting frame, so that a bottom layer of the liquid metal crystallizes on the substrate and a metal foil is formed on the substrate on one side of the casting frame. The method is characterized by the steps of measuring at least one out of the thickness and weight of the metal foil, and adjusting the contact surface area between the liquid metal and the substrate as a function of the measured value for the thickness and/or weight of the foils produced.
摘要翻译：本发明涉及使用箔铸造原理制造金属箔的方法和装置。该方法包括以下步骤：用液态金属填充铸造框架，使基板移动通过铸造框架的底部，衬底带的温度低于铸造框架底部的液态金属的熔点，使得液态金属的底层在基板上结晶，并且在铸造框架一侧的基板上形成金属箔。该方法的特征在于测量金属箔的厚度和重量中的至少一个，并且根据厚度和/或重量的测量值调节液体金属和基底之间的接触表面积的箔。

27. 发明申请

WO2004042122A1 METHOD AND APPARATUS FOR GROWING MULTIPLE CRYSTALLINE RIBBONS FROM A SINGLE CRUCIBLE 审中-公开
标题翻译：用于从单个可克隆生长多种结晶蛋白的方法和装置
公开(公告)号：WO2004042122A1
公开(公告)日：2004-05-21
申请号：PCT/US2003/034221
申请日：2003-10-28
申请人： EVERGREEN SOLAR, INC
发明人： WALLACE, Richard, Lee
IPC分类号： C30B15/00
CPC分类号： C30B15/34 , C30B15/005 , C30B15/007 , C30B15/24 , C30B29/06 , Y10T117/1036 , Y10T117/1044 , Y10T117/1052
摘要： Methods and apparatus for concurrent growth of multiple crystalline ribbons from a single crucible employ meniscus shapers to facilitate continuous growth of discrete and substantially flat crystalline ribbons having controlled width.
摘要翻译：用于从单个坩埚同时生长多个结晶带的方法和装置采用弯液面成形器以促进具有受控宽度的离散和基本平坦的结晶带的连续生长。

28. 发明申请

WO2004035877A2 METHOD AND APPARATUS FOR CRYSTAL GROWTH 审中-公开
标题翻译：晶体生长的方法和设备
公开(公告)号：WO2004035877A2
公开(公告)日：2004-04-29
申请号：PCT/US2003/032851
申请日：2003-10-17
申请人： EVERGREEN SOLAR, INC.
发明人： SACHS, Emanuel, Michael
IPC分类号： C30B
CPC分类号： C30B29/06 , C30B15/007 , C30B15/10 , Y10S117/903 , Y10T117/10 , Y10T117/1044 , Y10T117/1048
摘要： A method and apparatus for growing a crystalline or poly-crystalline body from a melt is described, wherein the melt is retained by capillary attachment to edge features of a mesa crucible. The boundary profile of the resulting melt surface results in an effect which induces a ribbon grown from the surface of the melt to grow as a flat body. Further, the size of the melt pool is substantially reduced by bringing these edges close to the ribbon, thereby reducing the materials cost and electric power cost associated with the process.
摘要翻译：描述了一种用于从熔体生长晶体或多晶体的方法和设备，其中熔体通过毛细附着到台面坩埚的边缘特征来保持。所得到的熔体表面的边界轮廓导致从熔体表面生长的带状物作为扁平体而生长的效果。此外，通过使这些边缘靠近带状物来大大减小熔池的尺寸，从而降低与该工艺相关的材料成本和电力成本。

29. 发明申请

WO02059399A2 MAGNETIC FIELD FURNACE AND A METHOD OF USING THE SAME TO MANUFACTURE SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：磁场炉及使用其制造半导体衬底的方法
公开(公告)号：WO02059399A2
公开(公告)日：2002-08-01
申请号：PCT/US0150541
申请日：2001-12-28
申请人： EBARA SOLAR INC
发明人： GLAVISH HILTON F , ISOZAKI HIDEYUKI , MAISHIGI KEIJI , FUJITA KENTARO
IPC分类号： C30B29/06 , C30B15/00 , C30B15/30 , C30B29/02 , C30B29/64 , C30B30/04
CPC分类号： C30B29/06 , C30B15/007 , C30B15/206 , C30B15/305 , Y10T117/10 , Y10T117/1068 , Y10T117/1072
摘要： An apparatus and method is provided for manufacturing a semiconductor substrate such as web crystals. The apparatus includes a chamber.and a growth hardware assembly housed within the chamber.A magnetic field system produces a vertical magnetic field within the chamber.
摘要翻译：提供了一种用于制造诸如网状晶体的半导体衬底的设备和方法。该装置包括腔室和容纳在腔室内的生长硬件组件。磁场系统在腔室内产生垂直磁场。

30. 发明申请

WO1988005835A1 A METHOD FOR THE PREPARATION OF A THIN SEMICONDUCTOR FILM 审中-公开
标题翻译：一种制备薄膜半导体膜的方法
公开(公告)号：WO1988005835A1
公开(公告)日：1988-08-11
申请号：PCT/GB1987000095
申请日：1987-02-06
申请人： THE BOC GROUP PLC
发明人： THE BOC GROUP PLC , ROBILLARD, Jean, Jules, Achille
IPC分类号： C30B15/00
CPC分类号： C30B15/08 , C23C26/02 , C30B15/00 , C30B15/007 , C30B29/605
摘要： A method of preparing a thin film of a semiconductor material on a substrate, in which charged microdroplets of the semiconductor material (12) or a constituent thereof are generated by electrohydrodynamic (EHD) extraction of the droplets from a meniscus (16) formed at an elongate tip (14) of a nozzle (11) containing the material in a molten state, the EHD extraction occurring under the influence of a high electric field produced by an extractor electrode (17) adjacent the tip (14) of the nozzle (11). The microdroplets are then accelerated away from the elongate tip (14) of the nozzle (11) to form a two-dimensional ribbon-like beam or blanket (19) of the charged microdroplets. The two-dimensional beam (19) is directed onto the trailing edge of a target (26) carried on a moving substrate (27) such that a film of the semiconductor material is formed on the substrate by deposition of the microdroplets on the trailing edge of the moving target.
摘要翻译：一种在基板上制备半导体材料的薄膜的方法，其中半导体材料（12）或其组成物的带电微滴通过电子流体动力学（EHD）从形成于其上的弯液面（16）提取液滴而产生包含处于熔融状态的材料的喷嘴（11）的细长尖端（14），所述EHD提取在由与喷嘴（11）的尖端（14）相邻的抽出器电极（17）产生的高电场的影响下发生）。然后将微滴从喷嘴（11）的细长尖端（14）加速，以形成带电微滴的二维带状束或毛毯（19）。二维光束（19）被引导到承载在移动的衬底（27）上的靶（26）的后缘上，使得半导体材料的膜通过在后缘上沉积微滴而形成在衬底上的移动目标。

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