专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

WO2017149428A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体装置，其制造方法以及包含该半导体装置的显示装置
公开(公告)号：WO2017149428A1
公开(公告)日：2017-09-08
申请号：PCT/IB2017/051122
申请日：2017-02-27
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , KOEZUKA, Junichi , OKAZAKI, Kenichi , NAKAZAWA, Yasutaka
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L51/50 , H05B33/14
摘要： The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. One embodiment of the present invention is a semiconductor device which includes a gate electrode, an insulating film over the gate electrode, an oxide semiconductor film over the insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, and a third oxide semiconductor film over the second oxide semiconductor film. The first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film include the same element. The second oxide semiconductor film includes a region having lower crystallinity than one or both of the first oxide semiconductor film and the third oxide semiconductor film.
摘要翻译：包括氧化物半导体膜的晶体管的场效应迁移率和可靠性得到改善。本发明的一个实施例是一种半导体器件，其包括栅电极，栅电极上的绝缘膜，绝缘膜上的氧化物半导体膜以及氧化物半导体膜上的一对电极。氧化物半导体膜包括第一氧化物半导体膜，第一氧化物半导体膜上的第二氧化物半导体膜以及第二氧化物半导体膜上的第三氧化物半导体膜。第一氧化物半导体膜，第二氧化物半导体膜和第三氧化物半导体膜包括相同的元素。第二氧化物半导体膜包括具有比第一氧化物半导体膜和第三氧化物半导体膜中的一者或两者低的结晶度的区域。

22. 发明申请

WO2016151429A1 DISPLAY PANEL AND INFORMATION PROCESSING DEVICE 审中-公开
标题翻译：显示面板和信息处理设备
公开(公告)号：WO2016151429A1
公开(公告)日：2016-09-29
申请号：PCT/IB2016/051455
申请日：2016-03-15
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , HIRAKATA, Yoshiharu , ISHITANI, Tetsuji , OKAZAKI, Kenichi , KIMURA, Hajime
IPC分类号： G09F9/46 , H01L51/50
CPC分类号： H01L27/3232 , G02F1/13306 , G02F1/133345 , G02F1/13338 , G02F1/133553 , G02F1/136286 , G02F1/1368 , G02F2001/133626 , G02F2201/44 , G06F3/041 , G06F3/0412 , G06F3/0416 , H01L27/3244 , H01L29/7869
摘要： A novel display panel that can be used as a reflective display panel in an environment with strong external light and as a self-luminous display panel in a dim environment, for example and that has low power consumption and is highly convenient or reliable is provided. The display panel includes a pixel and a substrate that supports the pixel. The pixel includes a first display element (e.g., a reflective liquid crystal element) that includes a reflective film having an opening as a first conductive film and a second display element (e.g., an organic EL element) that emits light to the opening.
摘要翻译：提供了一种新颖的显示面板，其可以在具有强外部光线的环境中用作反射显示面板，并且作为例如在昏暗环境中的自发光显示面板，并且具有低功耗并且非常方便或可靠。显示面板包括像素和支撑像素的基板。像素包括第一显示元件（例如，反射型液晶元件），其包括具有作为第一导电膜的开口的反射膜和向开口发光的第二显示元件（例如，有机EL元件）。

23. 发明申请

WO2016139560A1 OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE INCLUDING THE OXIDE SEMICONDUCTOR FILM, AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：氧化物半导体膜，包括氧化物半导体膜的半导体器件和包括半导体器件的显示器件
公开(公告)号：WO2016139560A1
公开(公告)日：2016-09-09
申请号：PCT/IB2016/051020
申请日：2016-02-25
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： OKAZAKI, Kenichi , KOEZUKA, Junichi , OBONAI, Toshimitsu , SAITO, Satoru , YAMAZAKI, Shunpei
IPC分类号： C23C14/08 , G09F9/30 , H01L21/363 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/045 , H01L29/24 , H01L29/34 , H01L29/66969
摘要： A novel oxide semiconductor film. An oxide semiconductor film with a small amount of defects. An oxide semiconductor film in which a peak value of the density of shallow defect states at an interface between the oxide semiconductor film and an insulating film is small. The oxide semiconductor film includes In, M (M is Al, Ga, Y, or Sn), Zn, and a region in which a peak value of a density of shallow defect states is less than 1E13 per square cm per volt.
摘要翻译：一种新型氧化物半导体膜。具有少量缺陷的氧化物半导体膜。在氧化物半导体膜和绝缘膜之间的界面处的浅缺陷状态的密度的峰值小的氧化物半导体膜。氧化物半导体膜包括In，M（M是Al，Ga，Y或Sn），Zn以及浅缺陷状态的密度的峰值小于1E13 /平方厘米每伏的区域。

24. 发明申请

WO2015193766A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE HAVING THE SAME 审中-公开
标题翻译：具有该半导体器件和显示器件的半导体器件和显示器件
公开(公告)号：WO2015193766A1
公开(公告)日：2015-12-23
申请号：PCT/IB2015/054335
申请日：2015-06-09
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： OKAZAKI, Kenichi , KOEZUKA, Junichi , JINTYOU, Masami , IGUCHI, Takahiro
IPC分类号： H01L21/336 , G02F1/1368 , H01L21/318 , H01L21/471 , H01L21/473 , H01L29/786 , H01L21/316
CPC分类号： H01L27/1225 , H01L29/513 , H01L29/66969 , H01L29/7869
摘要： A change in electrical characteristics can be inhibited and reliability can be improved in a semiconductor device including an oxide semiconductor. The semiconductor device including an oxide semiconductor film includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a third insulating film over the second insulating film. The second insulating film includes oxygen and silicon, the third insulating film includes nitrogen and silicon, and indium is included in a vicinity of an interface between the second insulating film and the third insulating film.
摘要翻译：在包括氧化物半导体的半导体器件中，可以抑制电特性的变化并提高可靠性。包括氧化物半导体膜的半导体器件包括第一绝缘膜，第一绝缘膜上的氧化物半导体膜，氧化物半导体膜上的第二绝缘膜，以及在第二绝缘膜上的第三绝缘膜。第二绝缘膜包括氧和硅，第三绝缘膜包括氮和硅，并且铟包括在第二绝缘膜和第三绝缘膜之间的界面附近。

25. 发明申请

WO2014014039A1 DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE DISPLAY DEVICE 审中-公开
标题翻译：显示装置和包括显示装置的电子装置
公开(公告)号：WO2014014039A1
公开(公告)日：2014-01-23
申请号：PCT/JP2013/069456
申请日：2013-07-10
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： HOSAKA, Yasuharu , SHIMA, Yukinori , OKAZAKI, Kenichi , YAMAZAKI, Shunpei
IPC分类号： G09F9/30 , G02F1/135 , G02F1/1368 , H01L21/336 , H01L27/32 , H01L29/786 , H01L51/50 , H05B33/04 , H05B33/14 , H05B33/22
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/133512 , G02F1/1337 , G02F1/13454 , H01L27/1214 , H01L27/1225 , H01L27/1248
摘要： The display device comprises a pixel portion(142) and a driver circuit portion(140). The pixel portion comprises a first transistor(101), a first insulating film(114) over the first transistor, a second insulating film(116) over the first insulating film, a third insulating film(120) over the second insulating film, a first electrode(122) over the third insulating film and a first alignment film(124) over the first electrode. The driver circuit portion comprises a second transistor(103), the first insulating film over the second transistor, the second insulating film over the first insulating film and the first alignment film over the second insulating film. The first insulating film comprises an inorganic insulating material. The second insulating film comprises an organic insulating material. The third insulating film comprises an inorganic insulating material. The first alignment film is entirely in contact with the second insulating film in the driver circuit portion.
摘要翻译：显示装置包括像素部分（142）和驱动器电路部分（140）。像素部分包括第一晶体管（101），第一晶体管上的第一绝缘膜（114），第一绝缘膜上的第二绝缘膜（116），第二绝缘膜上的第三绝缘膜（120）第一绝缘膜上的第一电极（122）和第一电极上的第一取向膜（124）。驱动器电路部分包括第二晶体管（103），第二晶体管上的第一绝缘膜，第一绝缘膜上的第二绝缘膜和第二绝缘膜上的第一取向膜。第一绝缘膜包括无机绝缘材料。第二绝缘膜包括有机绝缘材料。第三绝缘膜包括无机绝缘材料。第一取向膜与驱动电路部分中的第二绝缘膜完全接触。

26. 发明申请

WO2013054823A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2013054823A1
公开(公告)日：2013-04-18
申请号：PCT/JP2012/076260
申请日：2012-10-03
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , OKAZAKI, Kenichi , MIYAMOTO, Toshiyuki , HAMOCHI, Takashi , NOMURA, Masafumi
发明人： OKAZAKI, Kenichi , MIYAMOTO, Toshiyuki , HAMOCHI, Takashi , NOMURA, Masafumi
IPC分类号： H01L21/336 , G02F1/1368 , G09F9/30 , H01L29/786 , H01L51/50 , H05B33/04 , H05B33/14
CPC分类号： H01L21/02211 , H01L21/0214 , H01L21/02274 , H01L27/3258 , H01L27/3272 , H01L27/3276 , H01L29/7869
摘要： In a transistor using an oxide semiconductor, entry of hydrogen atoms into an oxide semiconductor film adversely affects reliability. Water is a typical substance including a hydrogen atom, which could enter a semiconductor device after manufacture. Thus, an object of the invention is to reduce the amount of substances including a hydrogen atom, particularly water, entering a semiconductor device using an oxide semiconductor. It was found that a silicon oxynitride film with high density sufficiently prevents entry of water, and does not swell much even in the atmosphere containing water. Accordingly, a silicon oxynitride film with high density is provided as a protective film so as to prevent entry of water into a semiconductor device using an oxide semiconductor. Specifically, a silicon oxynitride film used as the protective film has a density of 2.32 g/cm 3 or more.
摘要翻译：在使用氧化物半导体的晶体管中，氢原子进入氧化物半导体膜不利地影响可靠性。水是包含氢原子的典型物质，其可在制造后进入半导体器件。因此，本发明的目的是减少使用氧化物半导体进入半导体器件的包括氢原子，特别是水的物质的量。发现具有高密度的氮氧化硅膜足以防止水的进入，并且即使在含水的气氛中也不会膨胀。因此，提供高密度氧氮化硅膜作为保护膜，以防止水进入使用氧化物半导体的半导体器件中。具体地，用作保护膜的氮氧化硅膜的密度为2.32g / cm 3以上。

27. 发明申请

WO2011034068A1 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：WO2011034068A1
公开(公告)日：2011-03-24
申请号：PCT/JP2010/065887
申请日：2010-09-08
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , EGUCHI, Shingo , OIKAWA, Yoshiaki , OKAZAKI, Kenichi , MARUYAMA, Hotaka
发明人： EGUCHI, Shingo , OIKAWA, Yoshiaki , OKAZAKI, Kenichi , MARUYAMA, Hotaka
IPC分类号： G09F9/30 , C01B13/14 , H01L21/02 , H01L21/28 , H01L21/336 , H01L27/12 , H01L27/32 , H01L29/786 , H01L51/50 , H05B33/10 , H05B33/12
CPC分类号： H01L51/5012 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L27/3262 , H01L27/3272 , H01L27/3276 , H01L29/78678 , H01L29/7869 , H01L51/0097
摘要： An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
摘要翻译：本发明的目的是提高发光装置的可靠性。本发明的另一个目的是为具有使用氧化物半导体膜的薄膜晶体管的发光器件提供灵活性。发光器件在一个柔性基板上具有包括用于驱动电路的薄膜晶体管和包括用于像素的薄膜晶体管的像素部分的驱动电路部分。用于驱动电路的薄膜晶体管和用于像素的薄膜晶体管是包括与氧化物绝缘层的一部分接触的氧化物半导体层的倒置交错薄膜晶体管。

28. 发明申请

WO2017115222A1 METAL OXIDE FILM AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：金属氧化物薄膜和半导体器件
公开(公告)号：WO2017115222A1
公开(公告)日：2017-07-06
申请号：PCT/IB2016/057846
申请日：2016-12-21
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： HOSAKA, Yasuharu , OBONAI, Toshimitsu , SHIMA, Yukinori , JINTYOU, Masami , KUROSAKI, Daisuke , HAMOCHI, Takashi , KOEZUKA, Junichi , OKAZAKI, Kenichi , YAMAZAKI, Shunpei
IPC分类号： C01G15/00 , C23C14/08 , H01L21/8242 , H01L27/108 , H01L29/786
CPC分类号： H01L29/24 , C03C17/245 , C03C2217/23 , C03C2218/151 , C04B35/01 , C04B35/453 , C04B35/62218 , C04B2235/3217 , C04B2235/3225 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/787 , C04B2235/96 , C23C14/08 , C23C14/5853 , H01L29/7782 , H01L29/7786 , H01L29/7869
摘要： A metal oxide film includes indium, M , ( M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20 percent and lower than or equal to 60 percent.
摘要翻译：金属氧化物膜包括铟，M（M是Al，Ga，Y或Sn）和锌，并包括一个区域其中通过X射线衍射在垂直于膜表面的方向上观察到衍射强度来源于晶体结构的峰。此外，在透射电子显微镜图像中在垂直于膜表面的方向上观察到多个结晶部分。除晶体部分以外的区域的比例高于或等于20％且低于或等于60％。

29. 发明申请

WO2017042749A1 DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：其显示装置及其制造方法
公开(公告)号：WO2017042749A1
公开(公告)日：2017-03-16
申请号：PCT/IB2016/055420
申请日：2016-09-12
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： OIKAWA, Yoshiaki , KOEZUKA, Junichi , OKAZAKI, Kenichi
IPC分类号： G09F9/30 , G02F1/1368 , G09F9/46 , H01L21/336 , H01L29/786
CPC分类号： G02F1/1368 , G02F1/133305 , G02F1/13336 , G02F1/13338 , G02F1/133553 , G02F1/133555 , G02F2001/133357 , G02F2001/133368 , G02F2001/13685 , G02F2201/123 , G02F2202/10 , G06F1/1652 , G06F3/0412 , G06F3/044 , G06F2203/04103 , H01L27/1225 , H01L29/78648
摘要： A novel display device that is highly convenient or reliable is provided. Furthermore, a display with low power consumption and high display quality is provided. The display device includes a first display element (430), a second display element (630 ), a first transistor (Tr1), and second transistor (Tr3). The first display element (430) includes a first pixel electrode and a liquid crystal layer. The second display element (630) includes a second pixel electrode and a light-emitting layer. The first transistor (Tr1) is electrically connected to the first pixel electrode. The second transistor (Tr3) is electrically connected to the second pixel electrode. The first transistor (Tr1) and the second transistor (Tr3) each include an oxide semiconductor film. The first pixel electrode and the second pixel electrode each include at least one metal element contained in the oxide semiconductor film.
摘要翻译：提供了一种非常方便或可靠的新型显示装置。此外，提供具有低功耗和高显示质量的显示器。显示装置包括第一显示元件（430），第二显示元件（630），第一晶体管（Tr1）和第二晶体管（Tr3）。第一显示元件（430）包括第一像素电极和液晶层。第二显示元件（630）包括第二像素电极和发光层。第一晶体管（Tr1）电连接到第一像素电极。第二晶体管（Tr3）电连接到第二像素电极。第一晶体管（Tr1）和第二晶体管（Tr3）各自包括氧化物半导体膜。第一像素电极和第二像素电极各自包括包含在氧化物半导体膜中的至少一个金属元素。

30. 发明申请

WO2016147074A1 TOUCH PANEL 审中-公开
标题翻译：触控面板
公开(公告)号：WO2016147074A1
公开(公告)日：2016-09-22
申请号：PCT/IB2016/051214
申请日：2016-03-04
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： HIRAKATA, Yoshiharu , KUBOTA, Daisuke , OKAZAKI, Kenichi , YAMAZAKI, Shunpei
IPC分类号： G06F3/041 , G02F1/1333 , G02F1/1343 , G06F3/044 , H01L21/28 , H01L21/336 , H01L29/786
CPC分类号： G06F3/0412 , G06F3/0416 , G06F3/044 , G06F2203/04107 , G06F2203/04111 , G06F2203/04112
摘要： To provide a thin touch panel, a touch panel with high visibility, a lightweight touch panel, or a touch panel with low power consumption. A pair of conductive layers included in a capacitive touch sensor have a mesh shape including a plurality of openings. Furthermore, the pair of conductive layers included in the touch sensor are provided between a pair of substrates included in the touch panel, and a light-transmitting conductive layer capable of supplying a constant potential is provided between a circuit which drives a display element and the pair of conductive layers.
摘要翻译：提供薄触摸面板，具有高可见度的触摸面板，轻巧的触摸面板或具有低功耗的触摸面板。包括在电容式触摸传感器中的一对导电层具有包括多个开口的网状。此外，包括在触摸传感器中的一对导电层设置在包括在触摸面板中的一对基板之间，并且能够提供恒定电位的透光导电层设置在驱动显示元件的电路和一对导电层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式