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21. 发明申请

WO2010019007A3 VAPOR DEPOSITION REACTOR FOR FORMING THIN FILM 审中-公开
标题翻译：用于形成薄膜的蒸气沉积反应器
公开(公告)号：WO2010019007A3
公开(公告)日：2010-04-15
申请号：PCT/KR2009004528
申请日：2009-08-13
申请人： SYNOS TECHNOLOGY INC , LEE SANG IN
发明人： LEE SANG IN
IPC分类号： H01L21/205
CPC分类号： C23C16/45551 , C23C16/4412
摘要： A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.
摘要翻译：气相沉积反应器包括填充有第一材料的腔室和腔室中的至少一个反应模块。反应模块可以被配置成通过基底和反应模块之间的相对运动使基底通过反应模块。反应模块可以包括用于将第二材料注入到基底的注入单元。形成薄膜的方法包括将衬底放置在腔室中，在腔室中填充第一材料，相对于腔室中的反应模块移动衬底，以及在衬底通过反应模块时向衬底注入第二材料。

22. 发明申请

WO2013165889A1 RADICAL REACTOR WITH INVERTED ORIENTATION 审中-公开
标题翻译：具有反转方向的辐射反应器
公开(公告)号：WO2013165889A1
公开(公告)日：2013-11-07
申请号：PCT/US2013/038624
申请日：2013-04-29
申请人： SYNOS TECHNOLOGY, INC.
发明人： LEE, Daniel, Ho , PAK, Samuel, S. , YANG, Hyoseok , LEE, Sang, In
IPC分类号： C23C16/50
CPC分类号： C23C16/4412 , C23C16/4488 , C23C16/452 , C23C16/4583 , C23C16/50 , H01J37/3244 , H01J37/32458 , H01J37/32568
摘要： A radical reactor including an elongated structure received within a chamber of a body of the radical reactor. Radicals are generated within a radical chamber formed in the elongated structure by applying a voltage signal across the elongated structure and an electrode extending within the radical chamber. The radicals generated in the radical chamber are routed via a discharge port of the elongated structure and a conduit formed in the body of the radical reactor onto the substrate. The discharge port and the conduit are not aligned so that irradiation generated in the radical chamber is not directed to the substrate
摘要翻译：一种自由基反应器，包括接收在自由基反应器主体的室内的细长结构。通过在细长结构上施加电压信号和在自由腔内延伸的电极，在形成于细长结构中的自由基室内产生自由基。在自由腔中产生的自由基通过细长结构的排出口和形成在自由基反应器的主体中的管道被引导到基底上。排出口和管道不对准，使得在自由室中产生的照射不被引导到基底

23. 发明申请

WO2013109545A1 DEPOSITION OF GRAPHENE OR CONJUGATED CARBONS USING RADICAL REACTOR 审中-公开
标题翻译：使用雷达反应器沉积石墨或结合碳
公开(公告)号：WO2013109545A1
公开(公告)日：2013-07-25
申请号：PCT/US2013/021590
申请日：2013-01-15
申请人： SYNOS TECHNOLOGY, INC.
发明人： LEE, Sang, In , HWANG, Chang, Wan
IPC分类号： C23C16/44 , H05H1/24
CPC分类号： C23C16/26 , C23C16/452 , H01J37/32082
摘要： Depositing a layer of graphene or conjugate carbons on a surface of a substrate using carbon radicals generated by exposing a carbon material to radicals of a gas. The radicals of the gas are generated by injecting the gas into a plasma chamber and then applying voltage difference to electrodes within or surrounding the plasma chamber. The radicals of the gas come into contact with the carbon material (e.g., graphite) and excite carbon radicals. The excited carbon radicals are injected onto the surface of the substrate, passes through a constriction zone of the reactor assembly and are then exhausted through a discharge portion of the reactor assembly. When the excited carbon radicals come into contact with the substrate, the carbon radicals form a layer of graphene or conjugated carbons on the substrate.
摘要翻译：使用通过将碳材料暴露于气体的自由基而产生的碳自由基，在基体的表面上沉积一层石墨烯或共轭碳。气体的自由基通过将气体注入到等离子体室中，然后将电压差施加到等离子体室内或周围的电极而产生。气体的自由基与碳材料（例如石墨）接触并激发碳自由基。将激发的碳自由基注入基材的表面，通过反应器组件的收缩区域，然后通过反应器组件的排出部分排出。当激发的碳自由基与基底接触时，碳自由基在基底上形成一层石墨烯或共轭碳。

24. 发明申请

WO2012112712A1 DEPOSITING THIN LAYER OF MATERIAL ON PERMEABLE SUBSTRATE 审中-公开
标题翻译：在可渗透基材上沉积薄层材料
公开(公告)号：WO2012112712A1
公开(公告)日：2012-08-23
申请号：PCT/US2012/025297
申请日：2012-02-15
申请人： SYNOS TECHNOLOGY, INC , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： H01M4/82
CPC分类号： C23C16/045 , C23C16/403 , C23C16/45551
摘要： Embodiments relate to depositing a layer of material on a permeable substrate by passing the permeable substrate between a set of reactors. The reactors may inject source precursor, reactant precursor, purge gas or a combination thereof onto the permeable substrate as the permeable substrate passes between the reactors. Part of the gas injected by a reactor penetrates the permeable substrate and is discharged by the other reactor. The remaining gas injected by the reactor moves in parallel to the surface of the permeable substrate and is discharged via an exhaust portion formed on the same reactor.
摘要翻译：实施例涉及通过在一组反应器之间通过可渗透基底将一层材料沉积在可渗透基底上。当可渗透的基底通过反应器之前，反应器可将源前体，反应物前体，吹扫气体或其组合注入到可渗透基底上。由反应器注入的气体的一部分穿透可渗透的基底并被另一个反应器排出。由反应器喷射的剩余气体平行于可渗透基底的表面移动，并经由形成在同一反应器上的排气部排出。

25. 发明申请

WO2012061278A1 RADICAL REACTOR WITH MULTIPLE PLASMA CHAMBERS 审中-公开
标题翻译：具有多个等离子体气泡的雷达反应器
公开(公告)号：WO2012061278A1
公开(公告)日：2012-05-10
申请号：PCT/US2011/058552
申请日：2011-10-31
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C23C16/00
CPC分类号： H01J37/32899 , C23C16/45538 , C23C16/45551
摘要： Two or more plasma chambers are provided in a radical reactor to generate radicals of gases under different conditions for use in atomic layer deposition (ALD) process. The radical reactor has a body with multiple channels and corresponding process chambers. Each plasma chamber is surrounded by an outer electrode and has an inner electrode extending through the chamber. When voltage is applied across the outer electrode and the inner electrode with gas present in the plasma chamber, radicals of the gas is generated in the plasma chamber. The radicals generated in the plasma chamber are then injected into a mixing chamber for mixing with radicals of another gas from another plasma chamber, and injected onto the substrate. By providing two or more plasma chambers, different radicals of gases can be generated within the same radical reactor, which obviates the need for separate radical generators.
摘要翻译：在自由基反应器中提供两个或更多个等离子体室，以在用于原子层沉积（ALD）工艺的不同条件下产生气体自由基。自由基反应器具有多个通道的主体和相应的处理室。每个等离子体室被外部电极包围，并且具有延伸穿过该室的内部电极。当通过存在于等离子体室中的气体在外电极和内电极上施加电压时，在等离子体室中产生气体的自由基。然后将等离子体室中产生的自由基注入到混合室中，以与来自另一等离子体室的另一种气体的自由基混合，并注入到基板上。通过提供两个或更多个等离子体室，可以在相同的自由基反应器内产生不同的气体基团，这消除了对单独的自由基发生器的需要。

26. 发明申请

WO2012054323A1 DEPOSITION OF LAYER USING DEPOSITING APPARATUS WITH RECIPROCATING SUSCEPTOR 审中-公开
标题翻译：使用沉积装置与复合材料沉积层的沉积
公开(公告)号：WO2012054323A1
公开(公告)日：2012-04-26
申请号：PCT/US2011/056285
申请日：2011-10-14
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In , HWANG, Chang, Wan
发明人： LEE, Sang, In , HWANG, Chang, Wan
IPC分类号： C23C16/06
CPC分类号： C23C16/45551 , C23C16/403 , C23C16/45536
摘要： Atomic layer deposition is performed by reciprocating a susceptor in two directions, subjecting a substrate on the susceptor to two different sequences of processes. By subjecting the susceptor to different sequences of processes, the substrate undergoes different processes that otherwise would have required an additional set of injectors or reactors. The reduced number of injectors or reactors enables a more compact deposition device, and reduces the cost associated with the deposition device.
摘要翻译：通过使感受器沿两个方向往复移动来进行原子层沉积，对基座上的基底进行两个不同的处理顺序。通过对基座进行不同的工艺顺序，衬底经历不同的工艺，否则将需要额外的一组注射器或反应器。减少注射器或反应器的数量使得能够实现更紧凑的沉积装置，并降低与沉积装置相关的成本。

27. 发明申请

WO2011137127A1 VAPORIZING OR ATOMIZING OF ELECTRICALLY CHARGED DROPLETS 审中-公开
标题翻译：蒸发或电动充电滴灌
公开(公告)号：WO2011137127A1
公开(公告)日：2011-11-03
申请号：PCT/US2011/033989
申请日：2011-04-26
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C23C16/00
CPC分类号： C23C16/4486 , B05B5/001 , B05B5/043 , C23C16/45551
摘要： A vaporizing apparatus includes a chamber, a nozzle for dispersing a liquid into droplets, an electrode electrically isolated from the nozzle, and a heater for generating a vapor by applying heat to the droplets. The voltage source applies charges to the droplets by applying a voltage between the nozzle and the electrode. The vaporizing apparatus may be used to devices that deposit organic or inorganic thin films by chemical vapor deposition and/or atomic layer deposition processes, devices for supplying precursor materials that are deposited to form a thin film in organic light emitting diodes, devices that supply organic or inorganic precursor materials for encapsulation, and devices for supplying organic or inorganic polymer.
摘要翻译：蒸发装置包括室，用于将液体分散到液滴中的喷嘴，与喷嘴电隔离的电极，以及通过向液滴施加热而产生蒸气的加热器。电压源通过在喷嘴和电极之间施加电压来向液滴施加电荷。蒸发装置可用于通过化学气相沉积和/或原子层沉积工艺沉积有机或无机薄膜的装置，用于供应在有机发光二极管中沉积以形成薄膜的前体材料的装置，供应有机或用于封装的无机前体材料，以及用于供应有机或无机聚合物的装置。

28. 发明申请

WO2010095901A3 METHOD FOR FORMING THIN FILM USING RADICALS GENERATED BY PLASMA 审中-公开
标题翻译：使用等离子体生成的放射线形成薄膜的方法
公开(公告)号：WO2010095901A3
公开(公告)日：2010-11-25
申请号：PCT/KR2010001076
申请日：2010-02-22
申请人： SYNOS TECHNOLOGY INC , LEE SANG IN
发明人： LEE SANG IN
IPC分类号： H01L21/205
CPC分类号： C23C16/45538 , C23C16/06 , C23C16/34 , C23C16/45517 , C23C16/45523 , C23C16/45551 , C23C16/45563 , C23C16/50 , C23C16/545
摘要： A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.
摘要翻译：使用由等离子体产生的自由基形成薄膜的方法可以包括使用等离子体产生反应物前体的自由基; 通过将衬底暴露于反应物前体的自由基和源前体的混合物，在衬底上形成第一薄膜; 将基底暴露于源前体; 以及通过将所述衬底暴露于所述反应物前体和所述源前体的自由基的混合物而在所述衬底上形成第二薄膜。由于在第一薄膜的形成和第二薄膜的形成之间将基板暴露于源极前体，因此可以提高沉积速率。

29. 发明申请

WO2010019008A3 VAPOR DEPOSITION REACTOR 审中-公开
标题翻译：蒸气沉积反应器
公开(公告)号：WO2010019008A3
公开(公告)日：2010-04-15
申请号：PCT/KR2009004529
申请日：2009-08-13
申请人： SYNOS TECHNOLOGY INC , LEE SANG IN
发明人： LEE SANG IN
IPC分类号： H01L21/205
CPC分类号： C23C16/4412 , C23C16/45551 , C23C16/45563
摘要： A vapor deposition reactor includes a reaction module includes a first injection unit for injecting a first material onto a substrate. At least one second injection unit is placed within the first injection unit for injecting a second material onto the substrate. The substrate passes the reaction module through a relative motion between the substrate and the reaction module. The vapor deposition reactor advantageously injects a plurality of materials onto the substrate while the substrate passes the reaction module without exposing the substrate to the atmosphere in a chamber.
摘要翻译：气相沉积反应器包括反应模块，其包括用于将第一材料注入到基底上的第一注射单元。至少一个第二注射单元被放置在第一注射单元内，用于将第二材料注射到基底上。基板通过反应模块通过基板和反应模块之间的相对运动。气相沉积反应器有利地将多种材料注入到衬底上，同时衬底通过反应模块而不将衬底暴露在腔室中的大气中。

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