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11. 发明申请

WO2011034012A1 LOGIC CIRCUIT, LIGHT EMITTING DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE 审中-公开
标题翻译：逻辑电路，发光器件，半导体器件和电子器件
公开(公告)号：WO2011034012A1
公开(公告)日：2011-03-24
申请号：PCT/JP2010/065672
申请日：2010-09-06
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , OKAZAKI, Kenichi , OIKAWA, Yoshiaki , MARUYAMA, Hotaka , GODO, Hiromichi , YAMAZAKI, Shunpei
发明人： OKAZAKI, Kenichi , OIKAWA, Yoshiaki , MARUYAMA, Hotaka , GODO, Hiromichi , YAMAZAKI, Shunpei
IPC分类号： H01L29/786 , H01L21/28 , H01L29/417 , H01L29/423 , H01L29/49 , H03K17/30 , H03K19/0948 , H03K19/20
CPC分类号： H01L27/1233 , H01L27/0207 , H01L27/1214 , H01L27/1225 , H01L27/1288
摘要： An object is to obtain a desired threshold voltage of a thin film transistor using an oxide semiconductor. Another object is to suppress a change of the threshold voltage over time. Specifically, an object is to apply the thin film transistor to a logic circuit formed using a transistor having a desired threshold voltage. In order to achieve the above object, thin film transistors including oxide semiconductor layers with different thicknesses may be formed over the same substrate, and the thin film transistors whose threshold voltages are controlled by the thicknesses of the oxide semiconductor layers may be used to form a logic circuit. In addition, by using an oxide semiconductor film in contact with an oxide insulating film formed after dehydration or dehydrogenation treatment, a change in threshold voltage over time is suppressed and the reliability of a logic circuit can be improved.
摘要翻译：目的是获得使用氧化物半导体的薄膜晶体管的期望阈值电压。另一个目的是抑制阈值电压随时间的变化。具体地，目的是将薄膜晶体管施加到使用具有期望阈值电压的晶体管形成的逻辑电路。为了实现上述目的，可以在相同的衬底上形成包括具有不同厚度的氧化物半导体层的薄膜晶体管，并且其阈值电压由氧化物半导体层的厚度控制的薄膜晶体管可以用于形成逻辑电路。此外，通过使用与脱水或脱氢处理后形成的氧化物绝缘膜接触的氧化物半导体膜，抑制了阈值电压随时间的变化，并且可以提高逻辑电路的可靠性。

12. 发明申请

WO2021090105A1 DISPLAY DEVICE, DISPLAY MODULE, AND ELECTRONIC DEVICE 审中-公开
公开(公告)号：WO2021090105A1
公开(公告)日：2021-05-14
申请号：PCT/IB2020/060014
申请日：2020-10-26
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , OKAZAKI, Kenichi
IPC分类号： H01L51/42 , H01L31/12 , G09F9/30 , H01L27/32 , H01L29/786 , H05B33/02 , H01L51/50 , H05B33/14
摘要： A display device includes a first pixel circuit including a light-receiving element and a first transistor, and a second pixel circuit including a light-emitting element and a second transistor. The light-receiving element includes an active layer between a first pixel electrode and a common electrode, and the light-emitting element includes a light-emitting layer between a second pixel electrode and the common electrode. The first pixel electrode and the second pixel electrode are positioned on the same plane. The active layer and the light-emitting layer contain different organic compounds. A source or a drain of the first transistor is electrically connected to the first pixel electrode, and a source or a drain of the second transistor is electrically connected to the second pixel electrode. The first transistor includes a first semiconductor layer containing a metal oxide, and the second transistor includes a second semiconductor layer containing polycrystalline silicon.

13. 发明申请

WO2017137869A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体装置和包括半导体装置的显示装置
公开(公告)号：WO2017137869A1
公开(公告)日：2017-08-17
申请号：PCT/IB2017/050554
申请日：2017-02-02
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , OKAZAKI, Kenichi , TSUBUKU, Masashi , BABA, Haruyuki , SHIGENOBU, Sachie , KOEZUKA, Emi
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L21/8234 , H01L27/088
CPC分类号： H01L27/1225 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/78633 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： In a transistor including an oxide semiconductor, a variation in electrical characteristics is suppressed and reliability is improved. A semiconductor device includes a transistor. The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, a second gate electrode over the second insulating film, and a third insulating film over the oxide semiconductor film and the second gate electrode. The oxide semiconductor film includes a channel region overlapping with the second gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The first gate electrode and the second gate electrode are electrically connected to each other. A difference between a minimum value and a maximum value of the field-effect mobility in the case where the field-effect mobility in a saturation region of the transistor is measured.
摘要翻译：在包括氧化物半导体的晶体管中，电特性的变化得到抑制并且可靠性得到改善。半导体器件包括晶体管。晶体管包括：第一栅电极;在第一栅电极上的第一绝缘膜;在第一绝缘膜上的氧化物半导体膜;在氧化物半导体膜上的第二绝缘膜;在第二绝缘膜上的第二栅电极;以及第三绝缘膜覆盖氧化物半导体膜和第二栅电极。氧化物半导体膜包括与第二栅电极重叠的沟道区，与第三绝缘膜接触的源极区以及与第三绝缘膜接触的漏极区。第一栅电极和第二栅电极彼此电连接。在测量晶体管的饱和区域中的场效应迁移率的情况下场效应迁移率的最小值和最大值之间的差值。

14. 发明申请

WO2014061535A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2014061535A1
公开(公告)日：2014-04-24
申请号：PCT/JP2013/077541
申请日：2013-10-03
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , OKAZAKI, Kenichi , MASHIYAMA, Mitsuo , HANDA, Takuya , WATANABE, Masahiro , TOKUNAGA, Hajime
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/316 , H01L21/318 , H01L21/363 , H01L51/50 , H05B33/14
CPC分类号： H01L27/1248 , G02F1/1368 , H01L21/70 , H01L27/1052 , H01L27/1225 , H01L29/24 , H01L29/78648 , H01L29/7869 , H01L29/78693 , H01L51/50
摘要： Stable electrical characteristics of a transistor including an oxide semiconductor layer are achieved. A highly reliable semiconductor device including the transistor is provided. The semiconductor device includes a multilayer film formed of an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the oxide layer, and a gate electrode overlapping with the multilayer film with the gate insulating film interposed therebetween. The oxide layer contains a common element to the oxide semiconductor layer and has a large energy gap than the oxide semiconductor layer. The composition between the oxide layer and the oxide semiconductor layer gradually changes.
摘要翻译：实现了包括氧化物半导体层的晶体管的稳定的电特性。提供了包括晶体管的高可靠性半导体器件。半导体器件包括由氧化物层和氧化物半导体层形成的多层膜，与氧化物层接触的栅极绝缘膜，以及与多层膜重叠的栅电极，其间插入有栅极绝缘膜。氧化物层包含与氧化物半导体层共同的元素，并且具有比氧化物半导体层大的能隙。氧化物层和氧化物半导体层之间的组成逐渐变化。

15. 发明申请

WO2014003086A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2014003086A1
公开(公告)日：2014-01-03
申请号：PCT/JP2013/067590
申请日：2013-06-20
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , SASAKI, Toshinari , HAMOCHI, Takashi , MIYAMOTO, Toshiyuki , NOMURA, Masafumi , KOEZUKA, Junichi , OKAZAKI, Kenichi
IPC分类号： H01L21/336 , G02F1/1368 , G09F9/30 , H01L27/146 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L29/7869
摘要： To provide a semiconductor device including an oxide semiconductor in which a change in electrical characteristics is suppressed or whose reliability is improved. In a semiconductor device including an oxide semiconductor film in which a channel formation region is formed, an insulating film which suppresses entry of water and contains at least nitrogen and an insulating film which suppresses entry of nitrogen released form the insulating film are provided over the oxide semiconductor film. As water entering the oxide semiconductor film, water contained in the air, water in a film provided over the insulating film which suppresses entry of water, or the like can be given. Further, as the insulating film which suppresses entry of water, a nitride insulating film can be used, and the amount of hydrogen molecules released by heating from the nitride insulating film is smaller than 5.0 x10 21 molecules/cm 3 .
摘要翻译：提供一种包括氧化物半导体的半导体器件，其中电特性的变化被抑制或其可靠性提高。在包括其中形成沟道形成区域的氧化物半导体膜的半导体器件中，在氧化物上设置绝缘膜，其抑制水的入口并且至少包含氮和绝缘膜，该绝缘膜抑制从绝缘膜释放的氮的进入半导体膜。当进入氧化物半导体膜的水中，可以给出包含在空气中的水，设置在绝缘膜上的膜中的水，以抑制水的进入等。此外，作为抑制水的侵入的绝缘膜，可以使用氮化物绝缘膜，通过加热从氮化物绝缘膜释放的氢分子的量小于5.0×1021分/ cm 3。

16. 发明申请

WO2011033911A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2011033911A1
公开(公告)日：2011-03-24
申请号：PCT/JP2010/064433
申请日：2010-08-19
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , SAKAKURA, Masayuki , KOYAMA, Jun , OIKAWA, Yoshiaki , MARUYAMA, Hotaka , JINTYOU, Masami , OKAZAKI, Kenichi
发明人： YAMAZAKI, Shunpei , SAKAKURA, Masayuki , KOYAMA, Jun , OIKAWA, Yoshiaki , MARUYAMA, Hotaka , JINTYOU, Masami , OKAZAKI, Kenichi
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225
摘要： An object is to realize low power consumption while manufacturing a semiconductor device including a thin film transistor whose parasitic capacitance is reduced. Part of an insulating layer covering the periphery of a gate electrode layer is formed to be thick. Specifically, a stack including a spacer insulating layer and a gate insulating layer is formed. The thick part of the insulating layer covering the periphery of the gate electrode layer reduces parasitic capacitance formed between the gate electrode layer of the thin film transistor and another electrode layer (another wiring layer) overlapping with the gate electrode layer.
摘要翻译：本发明的目的是在制造包括其寄生电容减小的薄膜晶体管的半导体器件的同时实现低功耗。覆盖栅电极层周围的绝缘层的一部分形成为较厚。具体地，形成包括间隔绝缘层和栅极绝缘层的堆叠。覆盖栅电极层周围的绝缘层的厚部减小了在薄膜晶体管的栅极电极层与与栅电极层重叠的另一电极层（另一布线层）之间形成的寄生电容。

17. 发明申请

WO2011001822A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO2011001822A1
公开(公告)日：2011-01-06
申请号：PCT/JP2010/060150
申请日：2010-06-09
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , OIKAWA, Yoshiaki , OKAZAKI, Kenichi , MARUYAMA, Hotaka
发明人： OIKAWA, Yoshiaki , OKAZAKI, Kenichi , MARUYAMA, Hotaka
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66969 , H01L21/02502 , H01L21/02565 , H01L21/02664 , H01L21/28008 , H01L27/1225 , H01L29/7869 , H01L29/78696
摘要： Disclosed is a method to manufacture a thin film transistor having an oxide semiconductor as a channel formation region. The method includes; forming an oxide semiconductor layer over a gate insulating layer; forming a source and drain electrode layers over and in contact with the oxide semiconductor layer so that at least portion of the oxide semiconductor layer is exposed; and forming an oxide insulating film over and in contact with the oxide semiconductor layer. The exposed portion of the oxide semiconductor may be exposed to a gas containing oxygen in the presence of plasma before the formation of the oxide insulating film. The method allows oxygen to be diffused into the oxide semiconductor layer, which contributes to the excellent characteristics of the thin film transistor.
摘要翻译：公开了一种制造具有氧化物半导体作为沟道形成区域的薄膜晶体管的方法。该方法包括：在栅极绝缘层上形成氧化物半导体层; 在所述氧化物半导体层上形成与所述氧化物半导体层接触的源电极层和漏电极层，使得所述氧化物半导体层的至少一部分露出; 以及在氧化物半导体层上形成氧化物绝缘膜并与氧化物半导体层接触。在形成氧化物绝缘膜之前，氧化物半导体的暴露部分可能在存在等离子体的情况下暴露于含氧气体。该方法允许氧扩散到氧化物半导体层中，这有助于薄膜晶体管的优异特性。

18. 发明申请

WO2018047067A1 DISPLAY DEVICE AND ELECTRONIC DEVICE 审中-公开
标题翻译：显示装置和电子装置
公开(公告)号：WO2018047067A1
公开(公告)日：2018-03-15
申请号：PCT/IB2017/055351
申请日：2017-09-06
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , KOEZUKA, Junichi , OKAZAKI, Kenichi
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/336 , H01L51/50 , H05B33/14
CPC分类号： H01L27/1225 , G09G3/3233 , G09G3/3648 , G09G3/3677 , G09G3/3688 , G09G5/39 , G09G2320/103 , G09G2330/021 , G09G2330/04 , G09G2340/0407 , G09G2360/144 , G09G2360/18 , H01L27/0251 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： A novel display device is provided. The display device includes a pixel portion and a driver circuit for driving the pixel portion. The driver circuit includes a first transistor having a dual-gate structure. The pixel portion includes a second transistor having a single-gate structure and a pixel electrode electrically connected to the second transistor. The first transistor and the second transistor each include a first metal oxide film functioning as a channel. The metal oxide films each include a first region and a second region. The first region contains In or Zn, and oxygen. The second region contains In or an element M , and oxygen. The first region and the second region are dispersed or distributed in a mosaic pattern.
摘要翻译：提供了一种新颖的显示装置。显示装置包括像素部分和用于驱动像素部分的驱动电路。驱动器电路包括具有双栅极结构的第一晶体管。像素部分包括具有单栅结构的第二晶体管和电连接到第二晶体管的像素电极。第一晶体管和第二晶体管各自包括用作沟道的第一金属氧化物膜。金属氧化物膜各自包括第一区域和第二区域。第一个区域包含In或Zn和氧气。第二区域含有In或元素M和氧。第一区域和第二区域以马赛克图案分散或分布。

19. 发明申请

WO2017199128A1 SEMICONDUCTOR DEVICE OR DISPLAY DEVICE INCLUDING THE SAME 审中-公开
标题翻译：半导体器件或包括该器件的显示器件
公开(公告)号：WO2017199128A1
公开(公告)日：2017-11-23
申请号：PCT/IB2017/052712
申请日：2017-05-10
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , KUROSAKI, Daisuke , NAKAZAWA, Yasutaka , OKAZAKI, Kenichi
IPC分类号： H01L29/786 , C23C14/08 , G02F1/1368 , H01L21/336 , H01L21/363 , H01L21/477 , H01L51/50 , H05B33/14
摘要： To provide a novel method for manufacturing a semiconductor device. To provide a method for manufacturing a highly reliable semiconductor device at relatively low temperature. The method includes a first step of forming a first oxide semiconductor film in a deposition chamber and a second step of forming a second oxide semiconductor film over the first oxide semiconductor film in the deposition chamber. Water vapor partial pressure in an atmosphere in the deposition chamber is lower than water vapor partial pressure in atmospheric air. The first oxide semiconductor film and the second oxide semiconductor film are formed such that the first oxide semiconductor film and the second oxide semiconductor film each have crystallinity. The second oxide semiconductor film is formed such that the crystallinity of the second oxide semiconductor film is higher than the crystallinity of the first oxide semiconductor film.
摘要翻译：为了提供用于制造半导体器件的新颖方法。提供一种在较低温度下制造高可靠半导体器件的方法。该方法包括在沉积室中形成第一氧化物半导体膜的第一步骤和在沉积室中的第一氧化物半导体膜上形成第二氧化物半导体膜的第二步骤。沉积室中的气氛中的水蒸气分压低于大气中的水蒸气分压。第一氧化物半导体膜和第二氧化物半导体膜形成为使得第一氧化物半导体膜和第二氧化物半导体膜各自具有结晶性。第二氧化物半导体膜形成为使得第二氧化物半导体膜的结晶度高于第一氧化物半导体膜的结晶度。

20. 发明申请

WO2017178912A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体装置和包括半导体装置的显示装置
公开(公告)号：WO2017178912A1
公开(公告)日：2017-10-19
申请号：PCT/IB2017/051751
申请日：2017-03-28
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , OKAZAKI, Kenichi , KUROSAKI, Daisuke , NAKAZAWA, Yasutaka
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/30 , H01L51/50 , H05B33/14
摘要： To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. A semiconductor device includes an oxide semiconductor film, a gate electrode, an insulating film over the gate electrode, the oxide semiconductor film over the insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film, include the same element. The first oxide semiconductor film includes a region having lower crystallinity than the second oxide semiconductor film.
摘要翻译：为了提高包括氧化物半导体膜的晶体管的场效应迁移率和可靠性，一种半导体器件包括氧化物半导体膜，栅电极，栅电极上的绝缘膜，绝缘膜上的氧化物半导体膜以及氧化物半导体膜上的一对电极。氧化物半导体膜包括第一氧化物半导体膜和在第一氧化物半导体膜上的第二氧化物半导体膜。第一氧化物半导体膜和第二氧化物半导体膜包括相同的元素。第一氧化物半导体膜包括结晶度比第二氧化物半导体膜低的区域。

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