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    • 12. 发明申请
    • APPARATUS AND METHOD FOR CONTROLLING THE FREE SURFACE OF LIQUID IN A WELL PLATE
    • 用于控制井壁中的液体的自由表面的装置和方法
    • WO03039760A2
    • 2003-05-15
    • PCT/US0235619
    • 2002-11-05
    • EDC BIOSYSTEMS INCWILLIAMS ROGER OCHOW HUMPHREYREICHEL CHARLES ASINCLAIR JAMES EFORBUSH MICHAEL JVAN TUYL MICHAEL
    • WILLIAMS ROGER OCHOW HUMPHREYREICHEL CHARLES ASINCLAIR JAMES EFORBUSH MICHAEL JVAN TUYL MICHAEL
    • B01L3/00B41J2/14G01N35/10B05C
    • B01L3/50853B01L3/5085B01L2200/0642B01L2200/14B01L2300/047B01L2300/0838B01L2400/0406B41J2/14008G01N2035/1041
    • Devices useful in liquid transfer applications and in particular, devices for controlling the free surface of a source liquid in acoustic liquid ejection systems are disclosed. The devices advantageously maintain a source liquid to be transferred at a constant height and reduce disturbances formed in the liquid due to droplet ejection. In one variation, a well plate includes a plurality of wells each having a capillary. Source liquid in a well moves up the capillary due to capillary action and arrives at a certain height. The height arrived at remains constant despite the source liquid depleting from the well during the ejection process. The capillary can be separately joined or integral with the well plate, In another variation, an insert includes a capillary tube and at least one support attached thereto. In another variation, a device includes a plurality of capillary tubes joined together by a frame or other substrate. The device is positioned atop a well plate such that the capillary tubes align with and extend into the wells. In yet another variation, an insert includes a tubular member having a liquid restricting inlet. The restricting inlet is sufficiently small such that liquid forms a meniscus at the inlet. Methods for controlling the free surface of a source liquid in a source fluid container are also disclosed.
    • 公开了可用于液体转移应用的装置,特别是用于控制声学液体喷射系统中源液体的自由表面的装置。 这些装置有利地将待传输的源液体保持在恒定的高度并且减少由于液滴喷射而在液体中形成的干扰。 在一个变型中,孔板包括多个具有毛细管的孔。 井中的源液体由于毛细作用而向上移动毛细管并达到一定的高度。 尽管在喷射过程中源的液体从井中耗尽,达到的高度保持恒定。 毛细管可以单独地与孔板连接或成一体。在另一个实施例中,插入件包括毛细管和附接到其上的至少一个支撑件。 在另一个实施例中,一种装置包括通过框架或其它基底连接在一起的多个毛细管。 该装置位于孔板顶部,使得毛细管与孔对准并延伸到孔中。 在又一个变型中,插入件包括具有液体限制入口的管状构件。 限制入口足够小,使得液体在入口处形成弯液面。 还公开了用于控制源流体容器中源液体的游离表面的方法。
    • 13. 发明申请
    • A METHOD AND SYSTEM FOR CONTROLLING CHEMICAL MECHANICAL POLISHING THICKNESS REMOVAL
    • 用于控制化学机械抛光厚度去除的方法和系统
    • WO1998014306A1
    • 1998-04-09
    • PCT/US1997018346
    • 1997-10-03
    • EXCLUSIVE DESIGN COMPANY, INC.WILLIAMS, Roger, O.
    • EXCLUSIVE DESIGN COMPANY, INC.
    • B24B37/04
    • B24B37/013B24B37/042B24B49/03Y10S438/959
    • An improved method and apparatus for controlling the depth of removal by a chemical mechanical polishing of a selected material on a supporting semiconductor underlayer where it is desired to terminate removal of the selected material, such as silicon oxide, at a specified depth. In accordance with this novel method and system, the selected material such as a surface oxidization layer is polished to initiate removal thereof in the direction of the material-underlayer interface. This system includes three primary components: a chemical mechanical wafer polishing machine, a semiconductor thin film thickness measurement device, and statistical signal process algorithm and its associated computer system provides a chemical mechanical polishing system control by analysis and prediction of the current and future removal rates based on performance of past ratios for the before and after semiconductor thin film thickness measurements.
    • 一种改进的方法和装置,用于通过在支撑半导体底层上的所选材料的化学机械抛光来控制去除深度,其中期望在特定深度处终止所选材料(例如氧化硅)的移除。 根据这种新颖的方法和系统,抛光所选择的材料如表面氧化层,以在材料 - 底层界面的方向上开始去除它。 该系统包括三个主要组件:化学机械晶片抛光机,半导体薄膜厚度测量装置和统计信号处理算法及其相关的计算机系统通过分析和预测当前和未来的去除率来提供化学机械抛光系统控制 基于前后半导体薄膜厚度测量的性能。