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    • 1. 发明申请
    • A METHOD AND SYSTEM FOR CONTROLLING CHEMICAL MECHANICAL POLISHING THICKNESS REMOVAL
    • 用于控制化学机械抛光厚度去除的方法和系统
    • WO1998014306A1
    • 1998-04-09
    • PCT/US1997018346
    • 1997-10-03
    • EXCLUSIVE DESIGN COMPANY, INC.WILLIAMS, Roger, O.
    • EXCLUSIVE DESIGN COMPANY, INC.
    • B24B37/04
    • B24B37/013B24B37/042B24B49/03Y10S438/959
    • An improved method and apparatus for controlling the depth of removal by a chemical mechanical polishing of a selected material on a supporting semiconductor underlayer where it is desired to terminate removal of the selected material, such as silicon oxide, at a specified depth. In accordance with this novel method and system, the selected material such as a surface oxidization layer is polished to initiate removal thereof in the direction of the material-underlayer interface. This system includes three primary components: a chemical mechanical wafer polishing machine, a semiconductor thin film thickness measurement device, and statistical signal process algorithm and its associated computer system provides a chemical mechanical polishing system control by analysis and prediction of the current and future removal rates based on performance of past ratios for the before and after semiconductor thin film thickness measurements.
    • 一种改进的方法和装置,用于通过在支撑半导体底层上的所选材料的化学机械抛光来控制去除深度,其中期望在特定深度处终止所选材料(例如氧化硅)的移除。 根据这种新颖的方法和系统,抛光所选择的材料如表面氧化层,以在材料 - 底层界面的方向上开始去除它。 该系统包括三个主要组件:化学机械晶片抛光机,半导体薄膜厚度测量装置和统计信号处理算法及其相关的计算机系统通过分析和预测当前和未来的去除率来提供化学机械抛光系统控制 基于前后半导体薄膜厚度测量的性能。
    • 3. 发明申请
    • IMPROVED METHOD AND APPARATUS FOR CHEMICAL MECHANICAL POLISHING
    • 改进的化学机械抛光方法和装置
    • WO1996036459A1
    • 1996-11-21
    • PCT/US1996007119
    • 1996-05-17
    • EXCLUSIVE DESIGN COMPANY, INC.
    • EXCLUSIVE DESIGN COMPANY, INC.HOSHIZAKI, Jon, A.WILLIAMS, Roger, O.BUHLER, James, D.REICHEL, Charles, A.HOLLYWOOD, William, K.DE GEUS, RichardLEE, Lawrence, L.
    • B24B37/04
    • B24B37/105B24B7/241B24B37/042B24B37/30B24B37/32G05B19/182G05B2219/43142G05B2219/45058G05B2219/45232
    • A method and apparatus is disclosed for polishing the face of a semiconductor wafer. The wafer is held in position by a tooling head and is contacted by an abrasive pad. A table is provided on to which the abrasive pad is fixedly attached, both of which move in directions parallel to the face of the wafer being polished. A controller controls the motion of the table according to a predetermined polishing pattern and is capable of maintaining a constant velocity between the wafer and the abrasive pad. The tooling head includes a circular platen and a retention ring peripherally oriented about the outer edge of the platen which resists lateral forces on the wafer caused by engagement of the face of the wafer with the polishing surface. An adjustable coupling is mounted to the platen and the ring, and serves to adjustably position during polishing the height of the ring relative to the face of the wafer as well as to rigidly support during polishing the position of the retaining ring. A flexible disk is fixedly mounted between a support post and the platen and oriented substantially parallel to the face of the platen. The flexible disk is adapted to prevent rotation of the platen about the axis of the support post and to transmit forces between the platen and the post in directions parallel to the face of the platen.
    • 公开了一种用于抛光半导体晶片的表面的方法和装置。 晶片通过工具头保持在适当位置并且被研磨垫接触。 提供了一个桌子,研磨垫固定在该工作台上,两者都沿平行于待抛光晶片的表面的方向移动。 控制器根据预定的抛光图案控制工作台的运动,并且能够在晶片和研磨垫之间保持恒定的速度。 工具头包括圆形压板和围绕压板的外边缘周向定向的保持环,其抵抗由晶片的表面与抛光表面的接合引起的晶片上的横向力。 可调联接件安装到压板和环上,并且用于在抛光环相对于晶片表面的高度期间可调节地定位,并且在抛光保持环的位置期间刚性地支撑。 柔性盘固定地安装在支撑柱和压板之间并且基本上平行于压板的表面定向。 柔性盘适于防止压板围绕支柱的轴线旋转并且在平行于压板的表面的方向上在压板和柱之间传递力。