专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

101. 发明申请

WO99008117A2 MAGNETIC FIELD SENSOR 审中-公开
标题翻译：磁场传感器
公开(公告)号：WO99008117A2
公开(公告)日：1999-02-18
申请号：PCT/US1998/015558
申请日：1998-07-27
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08 , G01R
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3954 , G11B2005/3996
摘要： A magnetic field sensing structure for sensing magnetic field changes provided therein having a pair of pole structures with a gap space between them that each includes permeable material and end in substantially a common surface. A plurality of field sensing structures is positioned successively in the gap space to be supported between the pole structures with each having an end thereof substantially in the common surface. These sensing structures are formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers, at least two of which are separated from one another by a nonmagnetic, electrically conductive layer positioned between them. They are electrically connected to one another adjacent the common surface, and may be electrically connected to one of the pole structures.
摘要翻译：用于感测磁场变化的磁场感测结构具有一对磁极结构，它们之间具有间隙，每个磁极结构各自包括可渗透材料并且终止于基本上共同的表面。多个场感测结构连续地定位在间隙空间中，以支撑在磁极结构之间，每个磁极结构的端部基本上在公共表面中。这些感测结构由多个磁阻，各向异性的铁磁性薄膜层形成，其中至少两个通过位于它们之间的非磁性导电层彼此分离。它们相邻于公共表面彼此电连接，并且可以电连接到极结构中的一个。

102. 发明申请

WO98037550A3 MULTI-CHANNEL MAGNETIC HEAD WITH MAGNETORESISTIVE ELEMENTS 审中-公开
标题翻译：具有磁性元件的多通道磁头
公开(公告)号：WO98037550A3
公开(公告)日：1998-11-19
申请号：PCT/IB1998/000092
申请日：1998-01-22
IPC分类号： G11B5/11 , G11B5/235 , G11B5/29 , G11B5/39 , G11B5/40
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/11 , G11B5/3903 , G11B5/3925 , G11B5/3945 , G11B5/3951 , G11B5/40 , G11B2005/3996
摘要： Multi-channel magnetic head having a high channel density, provided with a head face (1) which extends in a first direction (I) in which a record carrier is relatively movable with respect to said magnetic head, and in a second direction (II) transverse to the first direction. The magnetic head has a structure of layers which, viewed in the first direction, are situated one on top of the other and extend substantially in the second direction and in a third direction (III) transverse to the first and the second direction. Viewed in the second direction, adjacent magnetoresistive sensors (S1, S2, S3) are distinguishable in the structure, each comprising a magnetoresistive measuring element (5), a first magnetic element (7) and a second magnetic element (9). The magnetic elements of adjacent sensors are electrically conducting and have electric connection faces (70a, 9a), while the measuring element in each sensor is electrically arranged in series between the first and the second magnetic element for passing a measuring current (i) through the measuring element substantially in the third direction.

103. 发明申请

WO98039102A1 INSULATOR CURE PROCESS FOR GIANT MAGNETORESISTIVE HEADS 审中-公开
标题翻译：绝缘子固定头的绝缘子固化工艺
公开(公告)号：WO98039102A1
公开(公告)日：1998-09-11
申请号：PCT/US1998/004264
申请日：1998-03-03
IPC分类号： B05D5/12 , B05B5/08 , B05C9/14 , G03F7/00 , G11B5/31 , G11B5/39 , B05B5/025 , B05C13/00 , B05D3/00 , B32B9/00 , B32B15/04 , C08J7/04 , C08J7/18
CPC分类号： B82Y25/00 , B82Y10/00 , G03F7/0035 , G11B5/3109 , G11B5/3113 , G11B5/313 , G11B5/3163 , G11B5/3967 , G11B2005/3996
摘要： A process for making a magnetic head including the steps of forming a first pole piece (103) comprising magnetic material and depositing a gap forming layer comprising nonmagnetic material (117) over the first pole piece. A first patterned layer (118) is cured by electron irradiation at a temperature less than about 175 DEG C to cross-link the polymer. A conductive coil (105) is formed on the cured first patterned layer and a second patterned layer of uncross-linked polymer (701) is formed over the conductive coil (105). The second patterned layer (701) is cured by electron irradiation at a temperature less than about 175 DEG C to cross-link the polymer. A second pole piece layer of magnetic material (104) is formed to complete the magnetic head.
摘要翻译：一种用于制造磁头的方法，包括以下步骤：形成包括磁性材料的第一极片（103），并在第一极片上沉积包含非磁性材料（117）的间隙形成层。第一图案化层（118）通过电子辐射在小于约175℃的温度下固化以交联聚合物。在固化的第一图案化层上形成导电线圈（105），并且在导电线圈（105）上形成未交联聚合物（701）的第二图案化层。第二图案层（701）通过电子辐射在小于约175℃的温度下固化以交联聚合物。形成磁性材料（104）的第二极片层以完成磁头。

104. 发明申请

WO1998029871A1 HARD DISK DRIVE HAVING CONTACT WRITE AND RECESSED MAGNETORESISTIVE READ HEAD 审中-公开
标题翻译：硬盘驱动器具有接触式写入和磁记录读取头
公开(公告)号：WO1998029871A1
公开(公告)日：1998-07-09
申请号：PCT/US1997024192
申请日：1997-12-30
申请人： CENSTOR CORPORATION
发明人： CENSTOR CORPORATION , LAIRSON, Bruce , LAUER, Mark
IPC分类号： G11B05/60
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/1278 , G11B5/3967 , G11B5/40 , G11B5/4886 , G11B5/58 , G11B5/60 , G11B5/6011 , G11B19/04 , G11B33/14 , G11B2005/3996
摘要： A hard disk drive has a head (22) with a read element (33) adjacent to a write element (30), with the write element extending closer to the disk (25) than the read element so that the write element is close to the disk for writing sharp patterns and the read element is removed from the disk to avoid wear and thermal asperities. The write element is encompassed with diamond-like carbon (DLC) to allow at least occasional dynamic contact with the disk while the read element, which includes a magnetoresistive material, is disposed in a recessed area and may be covered with a thin coating of DLC to avert corrosion. The disk may have a multilayer granular media for low-noise, high-strength perpendicular data storage. Perpendicular data storage may also be provided by keeping the write element in such close proximity to the media that perpendicular write fields predominate, while perpendicular signals from the media are favored by the read element.
摘要翻译：硬盘驱动器具有与读取元件（30）相邻的读取元件（33）的头部（22），写入元件比读取元件更靠近盘片（25），使得写入元件接近于用于写入锐利图案的磁盘和读取元件从磁盘中移除以避免磨损和热凹凸。写入元件包含类金刚石碳（DLC），以允许至少偶尔与盘的动态接触，而包括磁阻材料的读取元件设置在凹陷区域中并且可被DLC的薄涂层覆盖避免腐蚀。磁盘可能具有用于低噪声，高强度垂直数据存储的多层颗粒介质。垂直数据存储还可以通过保持写入元件紧密接近垂直写入字段占优势的介质来提供，而来自介质的垂直信号被读取元件所青睐。

105. 发明申请

WO1998022636A1 SPUTTERING TARGET AND ANTIFERROMAGNETIC FILM AND MAGNETO-RESISTANCE EFFECT ELEMENT FORMED BY USING THE SAME 审中-公开
标题翻译：使用它们形成的溅射目标和抗病毒膜和抗磁化效应元件
公开(公告)号：WO1998022636A1
公开(公告)日：1998-05-28
申请号：PCT/JP1997004232
申请日：1997-11-20
申请人： KABUSHIKI KAISHA TOSHIBA , YAMANOBE, Takashi , FUJIOKA, Naomi , ISHIGAMI, Takashi , KATSUI, Nobuo , FUKE, Hiromi , SAITO, Kazuhiro , IWASAKI, Hitoshi , SAHASHI, Masashi , WATANABE, Takashi
发明人： KABUSHIKI KAISHA TOSHIBA
IPC分类号： C23C14/34
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C23C14/14 , C23C14/3414 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3218 , H01F10/3268 , H01F41/183 , H01F41/302 , H01L43/12 , Y10S428/90 , Y10T428/1121 , Y10T428/26 , Y10T428/265
摘要： A sputtering target which is substantially composed of at least one R element selected from among Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re, and Mn. The target contains at least one kind of alloy or compound phase selected from among the alloy and compound phases of the R element and Mn in at least part of its target texture. In addition, the target contains
摘要翻译：基本上由选自Ni，Pd，Pt，Co，Rh，Ir，V，Nb，Ta，Cu，Ag，Au，Ru，Os，Cr，Mo，W中的至少一种R元素构成的溅射靶，和Re和Mn。目标含有至少一种选自R元素的合金和化合物相中的合金或化合物相，并且其目标结构的至少部分中含有Mn。此外，靶含有

106. 发明申请

WO1998012758A1 MAGNETO-RESISTANCE EFFECT DEVICE 审中-公开
标题翻译：磁阻效应器件
公开(公告)号：WO1998012758A1
公开(公告)日：1998-03-26
申请号：PCT/JP1997003270
申请日：1997-09-16
申请人： SANYO ELECTRIC CO., LTD. , MAEDA, Atsushi
发明人： SANYO ELECTRIC CO., LTD.
IPC分类号： H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01L43/08
摘要： A structure of a novel magneto-resistance effect device having a higher MR change than the conventional ones. The device comprises a multilayer film (3) having a multilayer structure in which a non-magnetic conductive layer (5) is sandwiched between a pair of ferromagnetic layers, a pair of electrodes (7 and 8) for feeding a detection electric current through the multilayer film (3), and filter layers (1 and 2) interposed between at least one of the paired ferromagnetic layers (4 and 6) and the electrodes (7 and 8) and made of a ferromagnetic material for giving spin-polarized electrons to the ferromagnetic layers (4 and 6). The magneto-resistance effect device is characterized in that the moving distance of the spin-polarized electrons in the ferromagnetic layers (4 and 6) is shorter than the spin diffusion length.
摘要翻译：具有比常规MR变化更高的MR变化的新型磁阻效应器件的结构。该装置包括具有多层结构的多层膜（3），其中非磁性导电层（5）夹在一对铁磁层之间，一对电极（7和8）用于将检测电流通过多层膜（3）和介于至少一个铁磁层（4和6）和电极（7和8）之间的滤波器层（1和2），并由用于给出自旋极化电子的铁磁材料制成铁磁层（4和6）。磁阻效应器件的特征在于，铁磁层（4和6）中的自旋极化电子的移动距离短于自旋扩散长度。

107. 发明申请

WO1997044781A1 CURRENT PERPENDICULAR-TO-THE-PLANE SPIN VALVE TYPE MAGNETORESISTIVE TRANSDUCER 审中-公开
标题翻译：当前的平面旋转阀类型磁传感器
公开(公告)号：WO1997044781A1
公开(公告)日：1997-11-27
申请号：PCT/US1997008601
申请日：1997-05-20
申请人： MKE-QUANTUM COMPONENTS COLORADO LLC
发明人： MKE-QUANTUM COMPONENTS COLORADO LLC , DYKES, John, West , KIM, Young, Keun
IPC分类号： G11B05/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3954 , G11B5/399 , G11B2005/3996
摘要： A transducer includes a spin valve ("SV") structure comprising a pinned ferromagnetic layer (98) adjoining a first end portion thereof and a freely rotating ferromagnetic layer (94) adjoining an oppositely disposed second end portion thereof. First and second current conductors (92, 104) adjoint the first and second end portions of the spin valve structure respectively in a current perpendicular-to-the-plane configuration ("cpp"). In a particular embodiment disclosed herein, a differential CPP transducer (120) includes a pair of SV structures (SV1, SV2) having first and second current conductors (132, 152) with a common current conductor (142) intermediate the SV structures.
摘要翻译：传感器包括自旋阀（“SV”）结构，其包括邻接其第一端部的钉扎铁磁层（98）和邻接其相对设置的第二端部的自由旋转铁磁层（94）。第一和第二电流导体（92,104）分别以当前的垂直于平面的配置（“cpp”）配合自旋阀结构的第一和第二端部。在本文公开的特定实施例中，差分CPP换能器（120）包括具有在SV结构之间的公共电流导体（142）的第一和第二电流导体（132,152）的一对SV结构（SV1，SV2）。

108. 发明申请

WO1996024955A1 MAGNETORESISTIVE STRUCTURE WITH ALLOY LAYER 审中-公开
标题翻译：合金层的磁结构
公开(公告)号：WO1996024955A1
公开(公告)日：1996-08-15
申请号：PCT/US1996001580
申请日：1996-02-06
申请人： NONVOLATILE ELECTRONICS, INCORPORATED
发明人： NONVOLATILE ELECTRONICS, INCORPORATED , DAUGHTON, James, M.
IPC分类号： H01L43/02
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3945 , G11B5/3948 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01L43/08 , H01L43/10
摘要： A magnetoresistive layered structure having on a substrate (10) two or more magnetoresistive, anisotropic ferromagnetic thin-films each two of which are separated by an intermediate layer on a substrate (10) of less than 50 Angstroms thickness formed of a substantially nonmagnetic, conductive alloy having two immiscible components therein. A further component to provide temperature stability in some circumstances is to be at least partially miscible in the first two components. Such structures can be formed as a sensor by having them electrically connected together with one positioned in a gap between magnetic material masses and one shielded by one of such masses. The magnetic material mass being used for shielding can be divided into two masses with one of those masses farthest from the gap serving as the shield.
摘要翻译：一种磁阻层状结构，在基板（10）上具有两个或更多个磁阻各向异性铁磁薄膜，每个磁阻薄膜由两层之间的中间层隔开，所述中间层由小于50埃的厚度基本上由非磁性导电合金在其中具有两个不混溶的组分。在某些情况下提供温度稳定性的另一组分是在前两种组分中至少部分混溶。这样的结构可以通过将它们电连接在一起而形成为传感器，其中一个位于磁性材料块之间的间隙中，一个被这种质量之一屏蔽。用于屏蔽的磁性材料质量可以分为两个质量，其中一个质量最远离用作屏蔽的间隙。

109. 发明申请

WO1995010123A1 MAGNETO-RESISTANCE DEVICE, AND MAGNETIC HEAD EMPLOYING SUCH A DEVICE 审中-公开
标题翻译：磁阻电阻器，以及采用这种器件的磁头
公开(公告)号：WO1995010123A1
公开(公告)日：1995-04-13
申请号：PCT/IB1994000275
申请日：1994-09-13
申请人： PHILIPS ELECTRONICS N.V. , PHILIPS NORDEN AB
发明人： PHILIPS ELECTRONICS N.V. , PHILIPS NORDEN AB , GIJS, Martinus, Adela, Maria , KELLY, Paul, Joseph
IPC分类号： H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3213 , H01F10/324 , H01F10/3254 , H01L43/10
摘要： A magneto-resistance device comprising two layers of ferromagnetic material mutually separated by at least one interposed layer of non-ferromagnetic material, in which at least one of the layers of ferromagnetic material comprises half-metallic material, and preferably both ferromagnetic layers are principally comprised of half-metallic material.
摘要翻译：磁阻装置包括由至少一个介于非铁磁材料层之间相互隔开的两层铁磁材料，其中铁磁材料层中的至少一层包含半金属材料，并且优选两个铁磁层主要包括的半金属材料。

110. 发明申请

WO1993026018A1 GIANT MAGNETORESISTANT SINGLE FILM ALLOYS 审中-公开
标题翻译：巨型磁性单层薄膜合金
公开(公告)号：WO1993026018A1
公开(公告)日：1993-12-23
申请号：PCT/US1993005667
申请日：1993-06-11
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , BERKOWITZ, Ami
IPC分类号： H01F01/00
CPC分类号： C23C14/5806 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/165 , C23C14/58 , C23C14/584 , G01R33/093 , G11B5/39 , G11B5/3903 , G11B2005/3996 , H01F41/18 , H01F41/301 , H01L43/10 , Y10T428/1107 , Y10T428/12014 , Y10T428/12097 , Y10T428/12118 , Y10T428/12465 , Y10T428/12486
摘要： A single layer film is deposited onto a substrate at room temperature from two sources, one source being a magnetic material, the other being a non-magnetic or weakly-magnetic material. The film is annealed for predetermined time in order to induce phase separation between the magnetic clusters and the non-magnetic matrix, and to form stable clusters of a size such that each magnetic particle, or cluster, comprises a single domain and has no dimensions greater than the mean free path within the particle.
摘要翻译：单层膜在室温下从两个源沉积到基板上，一个源为磁性材料，另一个为非磁性或弱磁性材料。将膜退火预定时间以便引起磁簇和非磁性基体之间的相分离，并形成尺寸的稳定簇，使得每个磁性颗粒或簇包含单个畴并且没有更大的尺寸比颗粒内的平均自由程。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式