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91. 发明申请

WO2014164465A1 IMPROVEMENT OF BARRIER FILM PERFORMANCE WITH N2O DILUTION PROCESS FOR THIN FILM ENCAPSULATION 审中-公开
标题翻译：用于薄膜封装的N2O扩散工艺的阻挡膜电泳性能的改进
公开(公告)号：WO2014164465A1
公开(公告)日：2014-10-09
申请号：PCT/US2014/022498
申请日：2014-03-10
申请人： APPLIED MATERIALS, INC.
发明人： CHOI, Young Jin , PARK, Beom Soo , CHOI, Soo Young
IPC分类号： H01L51/52 , H01L21/205
CPC分类号： H01L51/5253 , H01L33/0075 , H01L33/44 , H01L33/52 , H01L33/56
摘要： A method and apparatus for depositing an inorganic layer onto a substrate is described. The inorganic layer may be part of an encapsulating film utilized in various display applications. The encapsulating film includes one or more inorganic layers as barrier layers to improve water-barrier performance. An oxygen containing gas, such as nitrous oxide, is introduced during the deposition of the inorganic layer. As a result, the inorganic layer is lower in stress and may obtain a water vapor transmission rate (WVTR) of less than 100 mg/m 2 -day.
摘要翻译：描述了一种将无机层沉积到基底上的方法和装置。无机层可以是用于各种显示应用中的封装膜的一部分。封装膜包括一个或多个作为阻挡层的无机层以改善防水性能。在无机层的沉积期间引入含氧气体，例如一氧化二氮。结果，无机层的应力较低，可得到小于100mg / m 2·日的水蒸气透过率（WVTR）。

92. 发明申请

WO2014163773A1 PLASMA CURING OF PECVD HMDSO FILM FOR OLED APPLICATIONS 审中-公开
标题翻译：用于OLED应用的PECVD HMDSO膜的等离子体固化
公开(公告)号：WO2014163773A1
公开(公告)日：2014-10-09
申请号：PCT/US2014/016103
申请日：2014-02-12
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Jrjyan Jerry , CHOI, Soo Young
IPC分类号： H01L51/56 , H05B33/10
CPC分类号： H01L51/56 , C09D183/04 , C23C16/401 , C23C16/50 , C23C16/56 , H01L51/0034 , H01L51/5256
摘要： Methods for forming an OLED device are described. An encapsulation layer having a buffer layer sandwiched between barrier layers is deposited over an OLED structure. The buffer layer is deposited on the first barrier layer and is cured with a fluorine-containing plasma at a temperature less than 100 degrees Celsius. The second barrier layer is then deposited on the buffer layer.
摘要翻译：描述用于形成OLED器件的方法。具有夹在阻挡层之间的缓冲层的封装层沉积在OLED结构上。缓冲层沉积在第一阻挡层上，并在低于100摄氏度的温度下用含氟等离子体固化。然后将第二阻挡层沉积在缓冲层上。

93. 发明申请

WO2014159033A1 VTH CONTROL METHOD OF MULTIPLE ACTIVE LAYER METAL OXIDE SEMICONDUCTOR TFT 审中-公开
标题翻译：多层活性层金属氧化物半导体TFT的VTH控制方法
公开(公告)号：WO2014159033A1
公开(公告)日：2014-10-02
申请号：PCT/US2014/021611
申请日：2014-03-07
申请人： APPLIED MATERIALS, INC.
发明人： YIM, Dong-Kil , LIM, Rodney Shunleong , SCHEER, Evelyn , WON, Tae Kyung , CHOI, Soo Young , YOU, Harvey
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： The present invention generally relates to TFTs and methods for fabricating TFTs. When multiple layers are used for the semiconductor material in a TFT, a negative Vth shift may result. By exposing the semiconductor layer to an oxygen containing plasma and/or forming an etch stop layer thereover, the negative Vth shift may be negated.
摘要翻译：本发明一般涉及TFT和TFT的制造方法。当TFT中的半导体材料使用多层时，可能产生负的Vth偏移。通过将半导体层暴露于含氧等离子体和/或在其上形成蚀刻停止层，可以否定负的Vth偏移。

94. 发明申请

WO2014149263A1 ADHESION IMPROVEMENT BETWEEN CVD DIELECTRIC FILM AND CU SUBSTRATE 审中-公开
标题翻译： CVD介质膜与铜基板之间的粘合改进
公开(公告)号：WO2014149263A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/016287
申请日：2014-02-13
申请人： APPLIED MATERIALS, INC.
发明人： WON, Tae K. , CUI, Yi , PARK, Beom Soo , CHOI, Soo Young
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/345 , C23C16/0245
摘要： Methods of forming dielectric layers on a copper substrate are disclosed herein. In one embodiment, a method of depositing a dielectric layer can include positioning a copper substrate in a process chamber, forming and delivering the cleaning plasma to the substrate to form a cleaned surface on the substrate, forming and delivering the adhesion plasma to the surface of the substrate to form a copper compound thereon and depositing a dielectric layer over the copper compound. In another embodiment, a method of depositing a dielectric layer can include positioning a copper substrate in a process chamber, delivering an adhesion plasma to the copper substrate to form a copper compound and flowing a deposition gas into the process chamber to deposit a dielectric layer over the copper compound, wherein the flow between the adhesion plasma and the deposition gas is continuous.
摘要翻译：本文公开了在铜基底上形成电介质层的方法。在一个实施例中，沉积电介质层的方法可以包括将铜衬底定位在处理室中，形成并将清洁等离子体输送到衬底，以在衬底上形成清洁表面，形成并将粘合等离子体输送到所述基板在其上形成铜化合物并在所述铜化合物上沉积介电层。在另一个实施例中，沉积电介质层的方法可以包括将铜衬底定位在处理室中，将粘合等离子体输送到铜衬底以形成铜化合物并将沉积气体流入处理室以沉积介电层铜化合物，其中粘附等离子体和沉积气体之间的流动是连续的。

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