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    • 93. 发明申请
    • ELECTRONIC CIRCUIT WITH CASCODE AMPLIFIER
    • 带CASCODE放大器的电子电路
    • WO2009060095A1
    • 2009-05-14
    • PCT/EP2008/065231
    • 2008-11-10
    • NXP B.V.HEIJDEN, Mark PieterLEENAERTS, DominicusAPOSTOLIDOU, Melina
    • HEIJDEN, Mark PieterLEENAERTS, DominicusAPOSTOLIDOU, Melina
    • H03F1/22
    • H03F1/223H03F1/0266H03F3/45188H03F2200/18
    • An electronic circuit has an amplifier with an amplifying transistor (260) and a cascode transistor (262). A capacitive voltage divider (268) applies a fraction of an RF signal swing from the drain of the cascode transistor (262) to the gate of the cascode transistor (262), the fraction being determined by a ratio between capacitance values. In addition a bias voltage supply circuit (29, 290, 266) is provided. The bias voltage supply circuit is configured to define a relation between an average gate voltage of the cascode transistor (262) and an average drain supply voltage at the drain of the cascode transistor (262). This relation increases the average gate voltage with increasing average drain voltage, and the relation provides a non zero average gate voltage when extrapolated to zero average drain supply voltage.
    • 电子电路具有放大器,具有放大晶体管(260)和共源共栅晶体管(262)。 电容分压器(268)将来自共源共栅晶体管(262)的漏极的RF信号摆动的一部分施加到共源共栅晶体管(262)的栅极,该分数由电容值之间的比率确定。 此外,还提供了偏压供给电路(29,290,266)。 偏置电压供给电路被配置为限定共源共栅晶体管(262)的平均栅极电压与共源共栅晶体管(262)的漏极处的平均漏极电源电压之间的关系。 这种关系通过增加平均漏极电压来增加平均栅极电压,并且当外推到零平均漏极电源电压时,该关系提供非零平均栅极电压。
    • 95. 发明申请
    • AN ASIP ARCHITECTURE FOR DECODING AT LEAST TWO DECODING METHODS
    • 用于解码至少两个解码方法的ASIP架构
    • WO2009043918A2
    • 2009-04-09
    • PCT/EP2008/063259
    • 2008-10-02
    • INTERUNIVERSITAIR MICROELECTRONICA CENTRUM vzwPRIEWASSER, RobertBOUGARD, BrunoNAESSENS, Frederik
    • PRIEWASSER, RobertBOUGARD, BrunoNAESSENS, Frederik
    • H03M13/1105H03M13/2775H03M13/296H03M13/6508H03M13/6513H03M13/6569H03M13/6577
    • The present invention provides a system for execution of a decoding method, the system being capable of executing at least two data decoding methods which are different in underlying coding principle, whereby at least one of said data decoding methods requires data shuffling operations on said data. A system according to embodiments of the present invention comprises: - at least one application specific processor having an instruction set comprising arithmetic operators excluding multiplication, division and power, the processor being selected for execution of approximations of each of said at least two data decoding methods, - at least a first memory unit, e.g. background memory, for storing data, - a transfer means for transferring data from the first memory unit towards said at least one programmable processor, said transfer means including a data shuffler, and - a controller for controlling the data shuffler independent from the processor.
    • 本发明提供了一种用于执行解码方法的系统,该系统能够执行底层编码原理不同的至少两种数据解码方法,由此至少一种所述数据解码方法需要对所述数据进行数据混洗操作。 根据本发明的实施例的系统包括: - 至少一个应用专用处理器,具有包括除乘法,除法和功率的算术运算符的指令集,所述处理器被选择用于执行所述至少两个数据解码方法中的每一个的近似 , - 至少第一存储单元,例如 用于存储数据的后台存储器, - 用于将数据从第一存储器单元传送到所述至少一个可编程处理器的传送装置,所述传送装置包括数据洗牌器,以及 - 用于独立于处理器控制数据洗牌器的控制器。
    • 98. 发明申请
    • JUNCTION-PHOTOVOLTAGE METHOD AND APPARATUS FOR CONTACTLESS DETERMINATION OF SHEET RESISTANCE AND LEAKAGE CURRENT OF SEMICONDUCTOR
    • 用于连续测定半导体片层电阻和漏电流的接头光伏方法和装置
    • WO2009007164A2
    • 2009-01-15
    • PCT/EP2008/056132
    • 2008-05-19
    • INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZWSCHAUS, FredericCLARYSSE, Trudo
    • SCHAUS, FredericCLARYSSE, Trudo
    • G01R31/265
    • G01R31/311G01R31/2648
    • The invention relates to a junction-photo voltage method and apparatus for contactless determination of an electrical and/or physical parameter of a semiconductor structure comprising at least one p-n junction located at a surface, wherein the method comprises the steps of: illuminating the surface with the p-n junction of the semiconductor structure with a light beam of a first wavelength to create excess carriers at the surface; modulating the light intensity of the light beam at a single predefined frequency; determining a first photo-voltage at a first position inside the illuminated area and determining a second photo-voltage at at least a second position outside the illuminated area; and calculating an electrical and/or physical parameter of the semiconductor structure based on the first photo-voltage and on the second photo- voltage. In this way, a fast, accurate and easy to use possibility for contactless determination of an electrical and/or physical parameter of a semiconductor structure is provided.
    • 本发明涉及用于非接触确定半导体结构的电和/或物理参数的结 - 光电压方法和装置,其包括位于表面处的至少一个pn结,其中所述方法包括以下步骤:用 半导体结构的pn结与第一波长的光束在表面产生过量的载流子; 以单个预定频率调制光束的光强度; 确定所述照明区域内的第一位置处的第一光电压,并在所述照明区域外的至少第二位置处确定第二光电压; 以及基于所述第一光电压和所述第二光电压来计算所述半导体结构的电和/或物理参数。 以这种方式,提供了用于非接触地确定半导体结构的电和/或物理参数的快速,准确和易于使用的可能性。