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    • 1. 发明申请
    • ROTOR OF ROTARY MACHINE
    • 旋转机转子
    • WO1997033357A1
    • 1997-09-12
    • PCT/JP1996000515
    • 1996-03-04
    • NIPPONDENSO CO., LTD.OGISHIMA, KenjiSHIGA, Tsutomu
    • NIPPONDENSO CO., LTD.
    • H02K01/32
    • H02K1/32
    • An air passage (523a) is defined in a rotor core (520) by a punch hole (523) opened in each core plate (521) so laminated as to constitute the rotor core (520), and communicating with each other. Because the core plates (521) are laminated under the state where they are rotated by a predetermined angle relative to one other, the air passage (523a) is twisted towards one of the sides in a circumferential direction. According to this construction, an air flow is generated in the air passage (523a) by the revolution of the rotor core (520), and the rotor core (520) can be cooled satisfactorily. This construction is also effective for blowing dust of wear of a brush.
    • 通过在每个芯板(521)上开口的冲孔(523)在转子芯(520)中限定空气通道(523a),以构成转子芯(520)并彼此连通。 由于芯板(521)在相对于彼此旋转了预定角度的状态下被层叠,因此空气通道(523a)朝向圆周方向的一侧扭转。 根据该结构,通过转子铁芯520的旋转,在空气通路523a中产生气流,能够令人满意地冷却转子铁心520。 这种结构对于吹刷器的磨损灰尘也是有效的。
    • 2. 发明申请
    • COMMUNICATION SYSTEM
    • 通讯系统
    • WO1996025016A1
    • 1996-08-15
    • PCT/JP1995002406
    • 1995-11-24
    • NIPPONDENSO CO., LTD.TAGUCHI, AkemiHYODO, Masahito
    • NIPPONDENSO CO., LTD.
    • H04Q09/00
    • B60R16/0315B60R2016/0322G05B19/0421H04Q9/14
    • A master device transmits a continuation (or stopping) message on a communication line without causing the message to collide with response messages continuously transmitted from a slave device in the communication channel. Upon elapsing a time T1 after the completion of the transmission of a request message, a fault diagnosing tester (5) (master) transmits the continuation message when the count value of an idle counter exceeds P3' and an engine controller (1) (slave) transmits the next response message when the count value of the idle counter exceeds P2' (>P3'). Thus, the continuation message can be transmitted from the tester (5) before the controller (1) transmits the next response message without causing both messages to collide with each other on the communication line.
    • 主设备在通信线路上发送连续(或停止)消息,而不会导致消息与在通信信道中从从设备连续发送的响应消息相冲突。 在完成发送请求消息之后经过时间T1时,当空闲计数器的计数值超过P3'时,故障诊断测试器(5)(主机)发送继续消息,以及发动机控制器(1) )当空闲计数器的计数值超过P2'(> P3')时,发送下一个响应消息。 因此,在控制器(1)发送下一个响应消息而不使两个消息在通信线路上相互冲突的情况下,可以从测试器(5)发送继续消息。
    • 3. 发明申请
    • BRAKE PRESSURE CONTROLLER FOR VEHICLES
    • 制动压力控制器
    • WO1996007571A1
    • 1996-03-14
    • PCT/JP1995001760
    • 1995-09-04
    • NIPPONDENSO CO., LTD.TANAKA, EijiKAWANO, Kyoji
    • NIPPONDENSO CO., LTD.
    • B60T08/48
    • B60T8/4291B60T8/348B60T8/365B60T8/4872B60T8/5037B60T8/5093
    • SM valves 50FL, 50FR are changed over to communication positions for opening a conduit at the time of turn-off of a power supply and to cut-off positions when power is supplied from a brake control device (30). Since these SM valves 50FL, 50FR have an integral structure with a pressure-regulating valve, the term "cut-off position" means the position (pressure-regulating position) at which they function as a pressure-regulating valve for opening the conduit when a pressure from W/C 2FL, 2FR side exceeding a predetermined level is applied. Throttles 50FLS, 50FRS for imparting a pressure between these throttles and an opening/closing position are disposed towards an M/C 34 side from the opening/closing position at which communication/cut-off of the SM valves 50FL, 50FR is made. In this way, vapor lock can be prevented by preventing aeration which occurs when a high oil pressure is applied to the M/C side.
    • 在从制动控制装置(30)供给电力时,将SM阀50FL,50FR切换为用于在电源断开时断开导管的通信位置和切断位置。 由于这些SM阀50FL,50FR具有与压力调节阀一体的结构,所以术语“切断位置”是指作为用于打开管道的压力调节阀的位置(压力调节位置) 施加来自W / C 2FL,2FR侧超过预定水平的压力。 用于在这些节流阀之间施加压力和打开/关闭位置的节流阀50FLS,50FRS设置成从制造SM阀50FL,50FR的连通/切断的打开/关闭位置朝向M / C 34侧。 以这种方式,可以通过防止在M / C侧施加高油压时发生的通气来防止气体锁定。
    • 4. 发明申请
    • METHOD OF MANUFACTURING PART HAVING UNDERCUT
    • 制造部件的方法
    • WO1996003236A1
    • 1996-02-08
    • PCT/JP1995001463
    • 1995-07-21
    • NIPPONDENSO CO., LTD.
    • NIPPONDENSO CO., LTD.KOUGA, ToshiyaMIYASHITA, ShuFUJII, HiroyukiIMAI, Toshihiro
    • B21K21/08
    • B21K21/08B21K21/14
    • A method of manufacturing a part having an undercut, which is formed to have a predetermined diameter, in a simple way without the use of any split pattern. A stock material for a material (50a) being worked, disposed above a tapered portion (53) of the material (50a) is subjected to swaging by pressing of a sleeve punch (20). Simultaneously, the stock material for the material (50a) disposed in the vicinity of the tapered portion (53) is subjected toironing by a shoulder (12) of a die (10) to undergo bulging deformation. The stock material for the material (50a) disposed in the vicinity of the tapered portion (53) flows toward the axis of the material (50a) to be drawn diametrically until it abuts against the outer wall of a mandrel (30), and a hole (52) of the material (50a) is gently tapered to be reduced in diameter to have a diameter (d2). The stock material for the material (50a) in a range (L3) disposed below the tapered portion (53) of the material (50a) is not reduced in diameter owing to forward extrusion, and is extruded forward to form a blind hole (42) in the form of an undercut having a depth (L4) which corresponds to a depth (L3).
    • 在没有使用任何分割图案的情况下,以简单的方式制造具有底切的具有预定直径的部分的方法。 在材料(50a)的锥形部分(53)的上方加工的材料(50a)的原料通过冲压套筒冲头(20)进行模锻。 同时,通过模具(10)的肩部(12)对布置在锥形部分(53)附近的材料(50a)的原料进行环氧化,以进行膨胀变形。 设置在锥形部分53附近的材料(50a)的原材料朝着材料(50a)的轴线流动以直径拉伸,直到其抵靠心轴(30)的外壁,并且 材料(50a)的孔(52)被轻轻地锥形成直径减小以具有直径(d2)。 在材料(50a)的锥形部分(53)下方的范围(L3)中的材料(50a)的原材料由于向前挤压而直径不减小,并且向前挤出以形成盲孔(42 )具有深度(L4)对应于深度(L3)的底切的形式。
    • 5. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • WO1994015360A1
    • 1994-07-07
    • PCT/JP1993001866
    • 1993-12-24
    • NIPPONDENSO CO., LTD.MIURA, ShojiIIDA, MakioSUGISAKA, TakayukiSAKAKIBARA, ToshioISHIHARA, Osamu
    • NIPPONDENSO CO., LTD.
    • H01L21/76
    • H01L29/7317H01L21/76264H01L21/76275H01L21/76286H01L29/0615H01L29/1075H01L29/1087H01L29/7322H01L2924/0002H01L2924/00
    • Both breakdown strength and integration degree of the device are enhanced. The PN junction of the buried collector region (3) and the region (4) for increasing the collector breakdown strength is reversely biased. The depletion layer reaches the side isolation region (9a) for isolating the collector breakdown strength increasing region (4) at their sides. The surrounding semiconductor region (14) adjacent to the region (4) through the isolation region (9a) has a potential which is more approximate to the base area (5) than to the buried collector region (3). As a result, the depletion layer is affected by the low potentials from both sides of the base region (5) and the circumferential semiconductor region (14). The field concentration at and near the corner sections between the side and bottom of the base region (5) are relaxed. Avalanche breakdown at these sections is suppressed, and the breakdown strength is thus enhanced.
    • 提高了器件的击穿强度和集成度。 掩埋集电极区域(3)和区域(4)的PN结用于提高集电极击穿强度是相反的。 耗尽层到达侧面隔离区域(9a),用于在其侧面隔离集电极击穿强度增加区域(4)。 通过隔离区(9a)与区域(4)相邻的周围半导体区域(14)的电位比埋藏集电极区域(3)更靠近基极区域(5)。 结果,耗尽层受到基极区域(5)和周向半导体区域(14)两侧的低电位的影响。 在基部区域(5)的侧面和底部之间的角部和其附近的场浓度被放宽。 抑制这些部位的雪崩击穿,从而提高击穿强度。
    • 7. 发明申请
    • METHOD FOR FABRICATION OF SEMICONDUCTOR DEVICE
    • 半导体器件制造方法
    • WO1993008596A1
    • 1993-04-29
    • PCT/JP1992001326
    • 1992-10-12
    • NIPPONDENSO CO., LTD.MIURA, ShojiSUGISAKA, TakayukiKOMURA, AtsushiSAKAKIBARA, Toshio
    • NIPPONDENSO CO., LTD.
    • H01L21/76
    • H01L21/763H01L21/76264H01L21/76275H01L21/76281H01L21/76286H01L21/76802Y10S148/05Y10S148/135Y10S438/977
    • This invention is directed to prevent step breakage and short-circuit of wires resulting from steps of isolation trenches formed in an SOI substrate. An oxide film for a pad is formed on a main plane of an SOI layer formed on an insulating substrate and furthermore, a silicon nitride film and an SiO2 film are sequentially formed. Thereafter, isolation trenches reaching the insulating substrate are formed by RIE using the SiO2 film as the mask. An insulating film is then formed on the inner wall of the isolation grooves by thermal oxidation, and polycrystalline silicon is filled into the insolation trenches. This polycrystalline silicon is etched back while control is made so that the upper end of polycrystalline silicon inside the isolation trenches is above the upper end of the silicon nitride film, and the excessive polycrystalline silicon deposited on the substrate surface is removed. Next, polycrystalline silicon inside the isolation trenches and the silicon nitride film are used as an etching stopper to etch and remove the SiO2 film used as the mask at the time of the formation of the isolation trenches. Since this etching and removal of the SiO2 film used as the mask is carried out after polycrystalline silicon is filled into the isolation trenches, the oxide film for isolating the substrates inside the SOI substrate is not etched when the mask is removed. When the masking SiO2 film is etched and removed, polycrystalline silicon and the silicon nitride film inside the isolation trenches function as the etching stopper, and the oxide film for the pad as the lower layer and the insulating film formed on the inner wall of the trenches are prevented from being etched, and flatness in the trench portions is not lost.
    • 10. 发明申请
    • DIE CASTING METHOD
    • DIE铸造方法
    • WO1980001657A1
    • 1980-08-21
    • PCT/JP1979000034
    • 1979-02-14
    • NIPPONDENSO CO LTDSUZUKI HHASHIMOTO S
    • NIPPONDENSO CO LTD
    • B22D17/00
    • B22D27/11B22D17/00B22D17/10B22D17/32
    • Die casting method in which a molten metal is injected into a die cavity (30) for cast products through a sprue (31) and also applied with pressure by means of a pressure plunger (36) through a pressure channel (17) communicating with the die cavity (30) at a location other than the sprue (31). According to this invention, upon the application of pressure, the molten metal in the pressure channel (17) may be extruded into the die cavity to form an expanded flow so that the application of pressure is always carried out with a stable pressure. A part of the die-cast product solidified in the die cavity (30), which part is substantially opposed to the pressure channel (17), is cut along the moving direction of the plunger (36) across a sectional area larger than that of the pressure channel (17), in order to remove a portion where surface defects and/or segregation may be apt to grow so that the strength and/or workability of the die-cast products is/are deteriorated. Further, holes or grooves caused by said cutting are used for parts of configuration of products. This method is adapted for the mass production of products such as housings of compressors, pumps and the like, which is to be used under high-pressure conditions or to be subjected to precision working.
    • 压铸方法,其中熔融金属通过浇道(31)注入用于铸造产品的模腔(30)中,并且还通过压力柱塞(36)通过压力通道(17)施加压力,该压力通道(17)与 模具腔(30)在除了浇口(31)之外的位置处。 根据本发明,在施加压力时,压力通道(17)中的熔融金属可以被挤出到模腔中以形成膨胀的流动,使得压力的施加总是以稳定的压力进行。 在模具腔(30)中固化的部分基本上与压力通道(17)相对的部分在柱塞(36)的移动方向上被切割,横截面积大于 压力通道(17),以便除去表面缺陷和/或偏析易于生长的部分,使得压铸产品的强度和/或可加工性降低。 此外,由所述切割引起的孔或凹槽用于产品构造的部分。 该方法适用于在高压条件下使用或要进行精密加工的诸如压缩机,泵等的壳体的大量生产。