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1. 发明申请

WO2015156957A1 METHODS FOR FORMING METAL ORGANIC TUNGSTEN FOR MIDDLE OF THE LINE (MOL) APPLICATIONS 审中-公开
标题翻译：用于形成线（MOL）应用的金属有机钨矿的方法
公开(公告)号：WO2015156957A1
公开(公告)日：2015-10-15
申请号：PCT/US2015/020503
申请日：2015-03-13
申请人： APPLIED MATERIALS, INC.
发明人： WU, Liqi , YU, Sang Ho , DAITO, Kazuya , PARK, Kie Jin , WU, Kai , THOMPSON, David
IPC分类号： H01L21/28
CPC分类号： H01L21/76877 , C23C16/045 , C23C16/06 , C23C16/45536 , H01L21/28556 , H01L21/76843 , H01L21/76876
摘要： Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface.
摘要翻译：本文提供了用于生产中间线（MOL）应用的金属有机钨的方法。在一些实施例中，处理衬底的方法包括向处理室提供衬底，其中衬底包括形成在衬底的电介质层的第一表面中的特征; 将衬底暴露于由包括金属有机钨前体的第一气体形成的等离子体，以在该介电层的顶部和特征内形成钨阻挡层，其中在形成钨阻挡层期间处理室的温度小于约 225摄氏度; 以及在所述钨阻挡层上沉积钨填充层以将所述特征填充到所述第一表面。

2. 发明申请

WO2014058536A1 TUNGSTEN GROWTH MODULATION BY CONTROLLING SURFACE COMPOSITION 审中-公开
标题翻译：通过控制表面组成调节生长调节
公开(公告)号：WO2014058536A1
公开(公告)日：2014-04-17
申请号：PCT/US2013/055833
申请日：2013-08-20
申请人： APPLIED MATERIALS, INC.
发明人： WU, Kai , PARK, Kie Jin , YU, Sang Ho , LEE, Sang-Hyeob , DAITO, Kazuya , COLLINS, Joshua , WANG, Benjamin C.
IPC分类号： H01L21/205 , H01L21/20
CPC分类号： C23C16/452 , C23C16/08 , C23C16/50
摘要： A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.
摘要翻译：本文公开了一种用于在催化体积CVD沉积期间选择性地控制催化材料的沉积速率的方法。该方法可以包括将衬底定位在包括表面区域和间隙区域的处理室中，将包含钨的第一成核层保形地沉积在衬底的暴露表面上，用活性氮处理至少一部分第一成核层，其中将活化的氮优选沉积在表面区域上，使包含卤化钨和含氢气体的第一沉积气体优先沉积钨填充层以在衬底的间隙区域中反应，使包含卤化钨的成核气体反应形成第二使包含卤化钨和含氢气体的第二沉积气体反应以沉积钨场层。

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