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    • 7. 发明申请
    • SEMICONDUCTOR DEVICE WITH ANTIREFLECTIVE COATING
    • 具有抗反射涂层的半导体器件
    • WO2007076271A2
    • 2007-07-05
    • PCT/US2006062015
    • 2006-12-13
    • TEXAS INSTRUMENTS INCJACOBS SIMON JOSHUADEWALD DUANE SCOTTFILES LEIGH ABARTLETT TERRY A
    • JACOBS SIMON JOSHUADEWALD DUANE SCOTTFILES LEIGH ABARTLETT TERRY A
    • H01L21/00
    • G02B26/0841G02B1/115
    • A semiconductor device has an antireflective coating to improve image quality in an image display system. In one embodiment, the device hash a first high refractive index layer (215) overlying a reflective surface (205) of an integrated circuit, a first low refractive index layer (220) overlying the first high refractive index layer, a second high refractive index layer (225) overlying the first low refractive index layer, and a second low refractive index layer (230) overlying the second high refractive index layer. The alternating layers of high refractive index material and low refractive index material operate to form an optical trap, allowing light to pass through readily in one direction, but not so easily in a reverse direction. The dual alternating layer topology improves the antireflective properties of the antireflective layer and permits a wide range of adjustments for manipulating reflectivity and color point. A method of fabrication is also disclosed.
    • 半导体器件具有抗反射涂层以改善图像显示系统中的图像质量。 在一个实施例中,该器件散布覆盖集成电路的反射表面(205)的第一高折射率层(215),覆盖第一高折射率层的第一低折射率层(220),第二高折射率层 覆盖第一低折射率层的层(225)和覆盖第二高折射率层的第二低折射率层(230)。 高折射率材料和低折射率材料的交替层操作以形成光阱,允许光在一个方向上容易地通过,但在相反方向上不容易。 双交替层拓扑提高了抗反射层的抗反射性能,并且允许对操纵反射率和色点的宽范围的调整。 还公开了一种制造方法。