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1. 发明授权

US10128289B2 Embedded image sensor semiconductor packages and related methods 有权
公开(公告)号：US10128289B2
公开(公告)日：2018-11-13
申请号：US15262116
申请日：2016-09-12
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Weng-Jin Wu
IPC分类号： H01L27/146 , H01L29/765 , H01L21/8234
摘要： An embedded image sensor package including a transparent cover having a first side and an opposing second side. A first layer couples over the second side of the transparent cover and has an opening. An electrically conductive layer couples in or over the first layer and electrically couples with one or more electrical contacts exposed on an outer surface of the package. An image sensor chip having a first side with an image sensor and an opposing second side electrically couples with the electrically conductive layer at the first side of the image sensor chip. The image sensor chip couples over the first layer so the first side of the image sensor chip faces the second side of the transparent cover through the opening. The image sensor chip, first layer, and transparent cover at least partially define a cavity hermetically sealed using an underfill material. The package includes no wirebonds.

2. 发明申请

US20180069080A1 LOW-VOLTAGE CHARGE-COUPLED DEVICES WITH A HETEROSTRUCTURE CHARGE-STORAGE WELL 审中-公开
公开(公告)号：US20180069080A1
公开(公告)日：2018-03-08
申请号：US15679003
申请日：2017-08-16
申请人： ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY
发明人： Zhaoyu He , Yong-Hang Zhang
IPC分类号： H01L29/15 , H01L29/765 , H01L29/205 , H01L27/148
CPC分类号： H01L27/148 , H01L27/14806 , H01L29/157 , H01L29/205 , H01L29/765
摘要： A CCD with an internal heterostructure well to store the photogenerated carriers is realized by using barrier and absorber semiconductors with a type-II band alignment in nBn or pBp photodetectors to form a specific barrier configured to confine the depletion region and a well to trap and store the photogenerated minority carriers. Depending on the spectral regime, (InAs/InAsSb)/(InAs/AlGaSb) superlattices can be used in the infrared, Si/Ge or AlP/GaP in the visible portion of optical spectrum, and GaN/ZnO in the UV portion. The resulting device not only leverages the advantages of the conventional CCD (such as in-pixel signal integration to suppress the noise), but also boasts an advantageously low operational voltage, thereby ensuring the low power consumption and low band-to-band tunneling current/noise (in particular, for use as an infrared photodetector). In comparison with IR FPAs of related art, the cost of the device is reduced and no flip-chip mount on a read-out integrated circuit is required during the fabrication process.

3. 发明授权

US07154134B2 Adjustable CCD charge splitter 失效
公开(公告)号：US07154134B2
公开(公告)日：2006-12-26
申请号：US11177153
申请日：2005-07-06
申请人： Michael P. Anthony , Edward J. Kohler
发明人： Michael P. Anthony , Edward J. Kohler
IPC分类号： H01L29/765
CPC分类号： H01L29/76858 , G11C19/285 , H01L27/14812 , H01L29/76816
摘要： An adjustable charge coupled device (CCD) charge splitter includes a channel control structure and an associated plurality of output channels. Control signals applied to the channel control structure determine an amount of charge, which passes into each one of the plurality of output channels.

4. 发明授权

US5546438A BCD low noise high sensitivity charge detection amplifier for high performance image sensors 失效
标题翻译： BCD低噪声高灵敏度电荷检测放大器，用于高性能图像传感器
公开(公告)号：US5546438A
公开(公告)日：1996-08-13
申请号：US299686
申请日：1994-09-01
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H01L27/148 , G11C19/28 , H01L29/765
CPC分类号： H01L27/148
摘要： The image sensor charge detection amplifier has a charge storage well 60, a charge sensor 32 for sensing charge levels in the charge storage well 60, a charge drain 28 adjacent to the charge storage well 60, and charge transfer structures for transferring charge from the charge storage well 60 to the charge drain 28.
摘要翻译：图像传感器电荷检测放大器具有电荷存储阱60，用于感测电荷存储阱60中的电荷水平的电荷传感器32，与电荷存储阱60相邻的电荷漏极28以及用于从电荷转移电荷的电荷转移结构存储阱60连接到电荷漏极28。

5. 发明授权

US5491354A Floating gate charge detection node 失效
标题翻译：浮栅电荷检测节点
公开(公告)号：US5491354A
公开(公告)日：1996-02-13
申请号：US297460
申请日：1994-08-19
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H01L29/762 , H01L21/339 , H01L27/148 , H01L29/768 , H04N5/357 , H01L29/765 , G11C19/28
CPC分类号： H01L29/76816 , H01L27/148
摘要： The charge coupled device charge detection node includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type in the substrate; virtual gate regions of the first conductivity type formed in the second semiconductor layer, the virtual gate regions forming virtual phase potential areas; an insulating layer on the second semiconductor layer; a floating gate formed on the insulating layer, the floating gate is located above a portion of the second semiconductor layer that is between virtual gate regions, the floating gate forming a floating gate potential well in response to a voltage; a first transfer gate formed on the insulating layer and separated from the floating gate by a virtual gate region, the first transfer gate forming a transfer potential area in response to a voltage; and an electrode coupled to one of the virtual gate regions on the opposite side of the floating gate from the first transfer gate, the electrode increases the potential of the virtual phase potential area below the electrode in response to a voltage.
摘要翻译：电荷耦合器件电荷检测节点包括第一导电类型的第一半导体层; 在所述衬底中的第二导电类型的第二半导体层; 形成在第二半导体层中的第一导电类型的虚拟栅极区域，虚拟栅极区域形成虚拟相位电位区域; 第二半导体层上的绝缘层; 形成在所述绝缘层上的浮置栅极，所述浮栅位于所述第二半导体层的位于虚拟栅极区域之间的一部分上，所述浮置栅极响应于电压形成浮置栅极势阱; 形成在所述绝缘层上并通过虚拟栅极区与所述浮动栅极分离的第一传输栅极，所述第一传输栅极响应于电压形成传输电位区域; 以及电极，其耦合到浮置栅极与第一传输栅极的相对侧上的虚拟栅极区域中的一个，电极响应于电压而增加虚拟相电位区域在电极下方的电位。

6. 发明授权

US5128734A Surface channel hact 失效
标题翻译：表面通道
公开(公告)号：US5128734A
公开(公告)日：1992-07-07
申请号：US591656
申请日：1990-10-02
申请人： Donald E. Cullen , Sears W. Merritt , William J. Tanski , Emilio J. Branciforte , Robert N. Sacks , Roger D. Carroll
发明人： Donald E. Cullen , Sears W. Merritt , William J. Tanski , Emilio J. Branciforte , Robert N. Sacks , Roger D. Carroll
IPC分类号： H01L29/765 , H03H9/02
CPC分类号： H01L29/765 , H03H9/02976
摘要： A simplified heterostructure charge transport device has a GaAs transport layer that is the top layer of the device, deposited on an (Al,Ga) As barrier layer for vertical confinement of charge packets. Confinement at the top surface is provided by pinning of the conduction band surface states.
摘要翻译：简化的异质结电荷传输器件具有作为器件顶层的GaAs传输层，其沉积在用于垂直限制电荷包的（Al，Ga）As阻挡层上。顶表面的限制是通过固定导带表面状态来提供的。

7. 发明授权

US4779124A Virtual phase buried channel CCD 失效
标题翻译：虚相埋通道CCD
公开(公告)号：US4779124A
公开(公告)日：1988-10-18
申请号：US008154
申请日：1987-01-22
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H01L27/108 , H01L27/148 , H01L29/765 , H01L29/78 , H01L27/14 , H01L29/56 , H01L29/80
CPC分类号： H01L27/148 , H01L27/108 , H01L29/765
摘要： A virtual phase, buried channel CCD with the usual metal gate/oxide structure replaced by a reverse biased junction (possibly a heterojunction) or Schottky barrier is disclosed. Such gate substitution for a standard three phase or multiphase CCD and other devices compatibly fabricated with such gate are also disclosed.
摘要翻译：公开了具有由反向偏置结（可能是异质结）或肖特基势垒替代的通常的金属栅极/氧化物结构的虚拟相位掩埋沟道CCD。还公开了用这种栅极兼容制造的标准三相或多相CCD和其它器件的这种栅极替代。

8. 发明授权

US10608101B2 Detection circuit for photo sensor with stacked substrates 有权
公开(公告)号：US10608101B2
公开(公告)日：2020-03-31
申请号：US15861588
申请日：2018-01-03
申请人： Facebook Technologies, LLC
发明人： Xinqiao Liu
IPC分类号： H01L29/765 , H01L27/146 , H03K17/78
摘要： Embodiments relate to a stacked photo sensor assembly where two substrates are stacked vertically. The two substrates are connected via interconnects at a pixel level to provide a signal from a photodiode at a first substrate to circuitry on a second substrate. The circuitry on the second substrate performs operations that were conventionally performed on first substrate. More specifically, charge storage of the first substrate is replaced with capacitors on the second substrate. A voltage signal corresponding to the amount of charge in the first substrate is generated and processed in the second substrate. By stacking the first and second substrates, the photo sensor assembly can be made more compact while increasing or at least retaining the photodiode fill factor of the photo sensor assembly.

9. 发明申请

US20080111159A1 IMAGE SENSOR INCLUDING SPATIALLY DIFFERENT ACTIVE AND DARK PIXEL INTERCONNECT PATTERNS 有权
标题翻译：图像传感器包括空间不同的主动和深色像素互连图案
公开(公告)号：US20080111159A1
公开(公告)日：2008-05-15
申请号：US11560019
申请日：2006-11-15
申请人： Jeffrey P. Gambino , Mark D. Jaffe , Robert K. Leidy , Richard J. Rassel
发明人： Jeffrey P. Gambino , Mark D. Jaffe , Robert K. Leidy , Richard J. Rassel
IPC分类号： H01L31/101 , H01L29/765 , H01L23/52 , H01L21/339
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14645 , H01L27/14687
摘要： An interconnect layout, an image sensor including the interconnect layout and a method for fabricating the image sensor each use a first electrically active physical interconnect layout pattern within an active pixel region and a second electrically active physical interconnect layout pattern spatially different than the first electrically active physical interconnect layout pattern within a dark pixel region. The second electrically active physical interconnect layout pattern includes at least one electrically active interconnect layer interposed between a light shield layer and a photosensor region aligned therebeneath, thus generally providing a higher wiring density. The higher wiring density within the second layout pattern provides that that the image sensor may be fabricated with enhanced manufacturing efficiency and a reduction of metallization levels.
摘要翻译：互连布局，包括互连布局的图像传感器和用于制造图像传感器的方法各自使用有源像素区域内的第一电活性物理互连布局图案和在空间上不同于第一电活动的第二电活动物理互连布局图案物理互连布局图案在暗像素区域内。第二电活动物理互连布局图案包括插入在遮光层和在其下对准的光电传感器区域之间的至少一个电活动互连层，因此通常提供更高的布线密度。在第二布局图案中更高的布线密度提供了图像传感器可以制造成具有增强的制造效率和金属化水平的降低。

10. 发明申请

US20080042169A1 Doped plug for CCD gaps 有权
标题翻译：用于CCD间隙的掺杂插头
公开(公告)号：US20080042169A1
公开(公告)日：2008-02-21
申请号：US11807911
申请日：2007-05-30
申请人： William Washkurak , Michael Anthony , Gerhard Sollner
发明人： William Washkurak , Michael Anthony , Gerhard Sollner
IPC分类号： H01L21/339 , H01L29/765
CPC分类号： H01L29/768 , G11C19/282 , G11C19/285 , H01L29/66954
摘要： A method and structure of providing a doped plug to improve the performance of CCD gaps is discussed. A highly-doped region is implemented in a semiconductor, aligned beneath a gap. The plug provides a highly-conductive region at the semiconductor surface, therefore preventing the development of a region where potential is significantly influenced by surface charges.
摘要翻译：讨论了提供掺杂插塞以提高CCD间隙性能的方法和结构。在半导体中实现高掺杂区域，在间隙下对齐。插头在半导体表面提供了高导电性区域，因此防止了电位受到表面电荷的显着影响的区域的发展。

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