专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08937272B2 Vertical JFET source follower for small pixel CMOS image sensors 有权
标题翻译：用于小像素CMOS图像传感器的垂直JFET源极跟随器
公开(公告)号：US08937272B2
公开(公告)日：2015-01-20
申请号：US13476784
申请日：2012-05-21
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H01L31/062 , H01L31/113 , H01L27/146 , G01J1/44
CPC分类号： H01L27/14689 , H01L27/1464 , H01L27/14643 , H01L27/14679
摘要： An image sensor pixel suitable for use in a back-side-illuminated or a front-side-illuminated sensor arrangement is provided. The image sensor pixel may be a small size pixel that includes a source follower implemented using a vertical junction field effect (JFET) transistor. The vertical JFET source follower may be integrated directly into the floating diffusion node, thereby eliminating excess metal routing and pixel area typically allocated for the source follower in conventional pixel configurations. Pixel area may instead be allocated for increasing the charge storage capacity of the photodiode or can be used to reduce pixel size while maintaining pixel performance. Using a vertical junction field effect transistor in this way simplifies pixel addressing operations and minimizes random telegraph signal (RTS) noise associated with small size metal-oxide-semiconductor (MOS) transistors.
摘要翻译：提供适用于背面照明或前侧照射传感器装置的图像传感器像素。图像传感器像素可以是包括使用垂直结场效应（JFET）晶体管实现的源极跟随器的小尺寸像素。垂直JFET源极跟随器可以直接集成到浮动扩散节点中，从而消除了常规像素配置中通常分配给源极跟随器的过量金属布线和像素区域。可以替代地分配像素区域来增加光电二极管的电荷存储容量，或者可以用于在保持像素性能的同时减小像素尺寸。以这种方式使用垂直结场效应晶体管简化了像素寻址操作，并使与小尺寸金属氧化物半导体（MOS）晶体管相关联的随机电报信号（RTS）噪声最小化。

2. 发明授权

US08703522B2 Methods of forming a stratified photodiode for high resolution CMOS image sensor implemented with STI technology 有权
标题翻译：用STI技术实现高分辨率CMOS图像传感器的分层光电二极管形成方法
公开(公告)号：US08703522B2
公开(公告)日：2014-04-22
申请号：US13562835
申请日：2012-07-31
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H01L21/00 , H01L21/74 , H01L21/265
CPC分类号： H01L27/14603 , H01L27/14643 , H01L27/14683
摘要： A stratified photodiode for high resolution CMOS image sensors implemented with STI technology is provided. The photodiode includes a semi-conductive layer of a first conductivity type, multiple doping regions of a second conductivity type, multiple doping regions of the first conductivity type, and a pinning layer. The multiple doping regions of the second conductivity type are formed to different depths in the semi-conductive layer. The multiple doping regions of the first conductivity type are disposed between the multiple doping regions of the second conductivity type and form multiple junction capacitances without full depletion. In particular, the stratified doping arrangement allows the photodiode to have a small size, high charge storage capacity, low dark current, and low operation voltages.
摘要翻译：提供了用STI技术实现的高分辨率CMOS图像传感器的分层光电二极管。光电二极管包括第一导电类型的半导体层，第二导电类型的多个掺杂区域，第一导电类型的多个掺杂区域和钉扎层。第二导电类型的多个掺杂区域在半导体层中形成为不同的深度。第一导电类型的多个掺杂区域设置在第二导电类型的多个掺杂区域之间并且形成多个结电容而没有完全耗尽。特别地，分层掺杂布置允许光电二极管具有小尺寸，高电荷存储容量，低暗电流和低操作电压。

3. 发明授权

US08618459B2 Image sensor array for the back side illumination with junction gate photodiode pixels 有权
标题翻译：用于背光照明的图像传感器阵列，具有结栅光电二极管像素
公开(公告)号：US08618459B2
公开(公告)日：2013-12-31
申请号：US13210615
申请日：2011-08-16
申请人： Jaroslav Hynecek , Hirofumi Komori , Xia Zhao
发明人： Jaroslav Hynecek , Hirofumi Komori , Xia Zhao
IPC分类号： H01L27/148 , H01L31/18
CPC分类号： H01L27/14679 , G01J1/4228 , G01J1/44 , H01L27/1464
摘要： The present invention relates to a junction gate photo-diode (JGP) pixel that includes a JGP for accumulating charge in response to impinging photons. The JGP is positioned on a substrate and includes a top n layer, a middle p layer and a bottom n layer forming a n-p-n junction, and a control terminal coupled to the top n layer. Also included is a floating diffusion (FD) positioned on the substrate and coupled to a pixel output line through an amplifier. Also included is a pinned barrier (PB) positioned on the substrate between the JGP and the FD, the PB temporarily blocks charge transfer between the JGP and the FD. The accumulated charge is transferred from the JGP to FD by applying a control voltage to the JGP control terminal.
摘要翻译：本发明涉及一种结栅光电二极管（JGP）像素，其包括用于响应入射光子累积电荷的JGP。 JGP位于衬底上，并且包括形成n-p-n结的顶部n层，中间p层和底部n层，以及耦合到顶部n层的控制端子。还包括位于衬底上并通过放大器耦合到像素输出线的浮动扩散（FD）。还包括位于JGP和FD之间的衬底上的钉扎屏障（PB），PB暂时阻止JGP和FD之间的电荷转移。通过向JGP控制端子施加控制电压，将累积电荷从JGP传送到FD。

4. 发明授权

US08497546B2 Back-side-illuminated image sensors with bulk-charge-modulated image sensor pixels 有权
标题翻译：具有体电荷调制图像传感器像素的背面照明图像传感器
公开(公告)号：US08497546B2
公开(公告)日：2013-07-30
申请号：US13008784
申请日：2011-01-18
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H01L29/788
CPC分类号： H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14656
摘要： Image sensor arrays may include bulk-charge-modulated-device (BCMD) sensor pixels. The BCMD sensor pixels may be used in back-side-illuminated (BSI) image sensors. A BCMD sensor pixel need not include a dedicated addressing transistor. The BCMD sensor pixel may include a gated drain reset (GDR) structure that is used to perform reset operations. The GDR structure may be shared among multiple pixels, which provides increased charge storage capacity for high resolution image sensors. A negative back body bias may be applied to the BCMD pixel array, allowing the depletion region under each BCMD pixel to extend all the way to the back silicon surface. Extending the depletion region by negatively biasing the back silicon surface may serve to minimize pixel crosstalk.
摘要翻译：图像传感器阵列可以包括体电荷调制装置（BCMD）传感器像素。 BCMD传感器像素可用于背面照明（BSI）图像传感器。 BCMD传感器像素不需要包括专用寻址晶体管。 BCMD传感器像素可以包括用于执行复位操作的门控漏极复位（GDR）结构。 GDR结构可以在多个像素之间共享，这为高分辨率图像传感器提供了增加的电荷存储容量。可以向BCMD像素阵列施加负的后体偏置，从而允许每个BCMD像素下的耗尽区域一直延伸到后硅表面。通过负偏置背硅表面来延伸耗尽区域可以用于最小化像素串扰。

5. 发明申请

US20120273654A1 IMAGE SENSOR ARRAY FOR BACK SIDE ILLUMINATION WITH GLOBAL SHUTTER USING A JUNCTION GATE PHOTODIODE 有权
标题翻译：图像传感器阵列，用于使用一个连接门光电子体的全球快门进行背面照明
公开(公告)号：US20120273654A1
公开(公告)日：2012-11-01
申请号：US13210619
申请日：2011-08-16
申请人： Jaroslav Hynecek , Hirofumi Komori
发明人： Jaroslav Hynecek , Hirofumi Komori
IPC分类号： H01L27/148 , H01L31/18
CPC分类号： H01L27/1464 , H01L27/14641 , H01L27/14679
摘要： The present invention provides a junction gate photo-diode (JGP) pixel that includes a JGP accumulating charge in response to impinging photons. The JGP is positioned on a substrate and includes a top n layer, a middle p layer and a bottom n layer forming a n-p-n junction, and a control terminal coupled to the top n layer. Also includes is a floating diffusion (FD) positioned on the substrate and coupled to a pixel output line through an amplifier. Also includes is a pinned barrier (PB) and a storage gate (SG) positioned on the substrate between the JGP and the FD. The PB temporarily blocks charge transfer between the JGP and the FD, and the SG stores the accumulated charge from the JGP, and transfers the stored charge to the FD for readout.
摘要翻译：本发明提供一种结栅光电二极管（JGP）像素，其包括响应于入射光子的JGP累积电荷。 JGP位于衬底上，并且包括形成n-p-n结的顶部n层，中间p层和底部n层，以及耦合到顶部n层的控制端子。还包括位于衬底上并通过放大器耦合到像素输出线的浮动扩散（FD）。还包括位于JGP和FD之间的衬底上的钉扎屏障（PB）和存储门（SG）。 PB临时阻止JGP和FD之间的电荷传输，SG存储来自JGP的累积电荷，并将存储的电荷传送到FD以进行读出。

6. 发明申请

US20100171157A1 IMAGE SENSOR WITH COMPACT PIXEL LAYOUT 有权
标题翻译：具有紧凑像素布局的图像传感器
公开(公告)号：US20100171157A1
公开(公告)日：2010-07-08
申请号：US12725396
申请日：2010-03-16
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14643
摘要： Solid-state image sensors, specifically image sensor pixels, which have three or four transistors, high sensitivity, low noise, and low dark current, are provided. The pixels have separate active regions for active components, row-shared photodiodes and may also contain a capacitor to adjust the sensitivity, signal-to-noise ratio and dynamic range. The low dark current is achieved by using pinned photodiodes.
摘要翻译：提供具有三个或四个晶体管，高灵敏度，低噪声和低暗电流的固态图像传感器，特别是图像传感器像素。像素具有用于有源分量，行共享光电二极管的分离的有源区，并且还可以包含用于调节灵敏度，信噪比和动态范围的电容器。低暗电流通过使用pinned光电二极管实现。

7. 发明申请

US20100044824A1 STRATIFIED PHOTODIODE FOR HIGH RESOLUTION CMOS IMAGE SENSOR IMPLEMENTED WITH STI TECHNOLOGY 有权
标题翻译：用于STI技术实现的高分辨率CMOS图像传感器的分光光度
公开(公告)号：US20100044824A1
公开(公告)日：2010-02-25
申请号：US12608731
申请日：2009-10-29
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H01L31/101
CPC分类号： H01L27/14603 , H01L27/14643 , H01L27/14683
摘要： A stratified photodiode for high resolution CMOS image sensors implemented with STI technology is provided. The photodiode includes a semi-conductive layer of a first conductivity type, multiple doping regions of a second conductivity type, multiple doping regions of the first conductivity type, and a pinning layer. The multiple doping regions of the second conductivity type are formed to different depths in the semi-conductive layer. The multiple doping regions of the first conductivity type are disposed between the multiple doping regions of the second conductivity type and form multiple junction capacitances without full depletion. In particular, the stratified doping arrangement allows the photodiode to have a small size, high charge storage capacity, low dark current, and low operation voltages.
摘要翻译：提供了用STI技术实现的高分辨率CMOS图像传感器的分层光电二极管。光电二极管包括第一导电类型的半导体层，第二导电类型的多个掺杂区域，第一导电类型的多个掺杂区域和钉扎层。第二导电类型的多个掺杂区域在半导体层中形成为不同的深度。第一导电类型的多个掺杂区域设置在第二导电类型的多个掺杂区域之间并且形成多个结电容而没有完全耗尽。特别地，分层掺杂布置允许光电二极管具有小尺寸，高电荷存储容量，低暗电流和低操作电压。

8. 发明申请

US20100044812A1 STRATIFIED PHOTODIODE FOR HIGH RESOLUTION CMOS IMAGE SENSOR IMPLEMENTED WITH STI TECHNOLOGY 有权
公开(公告)号：US20100044812A1
公开(公告)日：2010-02-25
申请号：US12608734
申请日：2009-10-29
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H01L31/101
CPC分类号： H01L27/14603 , H01L27/14643 , H01L27/14683
摘要： A stratified photodiode for high resolution CMOS image sensors implemented with STI technology is provided. The photodiode includes a semi-conductive layer of a first conductivity type, multiple doping regions of a second conductivity type, multiple doping regions of the first conductivity type, and a pinning layer. The multiple doping regions of the second conductivity type are formed to different depths in the semi-conductive layer. The multiple doping regions of the first conductivity type are disposed between the multiple doping regions of the second conductivity type and form multiple junction capacitances without full depletion. In particular, the stratified doping arrangement allows the photodiode to have a small size, high charge storage capacity, low dark current, and low operation voltages.

9. 发明授权

US07468500B2 High performance charge detection amplifier for CCD image sensors 有权
标题翻译： CCD图像传感器的高性能电荷检测放大器
公开(公告)号：US07468500B2
公开(公告)日：2008-12-23
申请号：US11224812
申请日：2005-09-13
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H01L27/00
CPC分类号： H04N5/335 , H01L27/148 , H03F1/38 , H03F3/08 , H03F3/345 , H03F3/505 , H03F2203/5015
摘要： The CCD charge detection amplifier includes a floating diffusion charge detection node biased from a voltage reference node; a reset device coupled between the floating Diffusion charge detection node and the voltage reference node; a first source follower stage having a control node coupled to the charge detection node; and a positive feedback device coupled in series with the source follower stage and having a control node biased from the voltage reference node.
摘要翻译： CCD电荷检测放大器包括从电压参考节点偏置的浮动扩散电荷检测节点; 耦合在浮动扩散电荷检测节点和电压参考节点之间的复位装置; 具有耦合到所述电荷检测节点的控制节点的第一源极跟随器级; 以及与源极跟随器级串联耦合并且具有从电压参考节点偏置的控制节点的正反馈装置。

10. 发明申请

US20080087922A1 Image sensor with improved color crosstalk 有权
标题翻译：图像传感器具有改善的色彩串扰
公开(公告)号：US20080087922A1
公开(公告)日：2008-04-17
申请号：US11730177
申请日：2007-03-29
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H01L27/148
CPC分类号： H01L31/18 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/1463 , H01L27/14645
摘要： An image sensor comprises a substrate of a first conductivity type. First and second pixels are arrayed over the substrate. A potential barrier is formed in a region of the substrate corresponding to the first pixel but not in a region of the substrate corresponding to the second pixel. The second pixel is responsive to a color having a wavelength longer than the color to which the first pixel is responsive. The potential barrier is doped with dopants by a high energy ion implantation dopants or by an ion implantation or diffusion during epitaxial growth of the P-type epitaxial layer.
摘要翻译：图像传感器包括第一导电类型的衬底。第一和第二像素排列在衬底上。在与第一像素相对应的衬底的区域中形成势垒，但不对应于第二像素的衬底的区域中形成势垒。第二像素响应于具有比第一像素响应的颜色长的波长的颜色。在P型外延层的外延生长期间，势垒通过高能离子注入掺杂剂或者通过离子注入或扩散掺杂掺杂剂。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式