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1. 发明申请

US20080173905A1 SOLID STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20080173905A1
公开(公告)日：2008-07-24
申请号：US11952755
申请日：2007-12-07
申请人： Masanori NAGASE , Jiro Matsuda , Tsuneo Sasamoto , Toshiaki Hayakawa
发明人： Masanori NAGASE , Jiro Matsuda , Tsuneo Sasamoto , Toshiaki Hayakawa
IPC分类号： H01L27/148 , H01L31/18
CPC分类号： H01L29/76858 , H01L27/14621 , H01L27/14683 , H01L27/14806 , H01L27/14818 , H01L27/14843
摘要： A solid state imaging device comprises: a photoelectric converting portion provided on a semiconductor substrate; a charge transfer path, formed in an adjacent position to the photoelectric converting portion, that receives a signal charge generated in the photoelectric converting portion and transfers the signal charge in a predetermined direction; and a gate electrode that transfers the signal charge from the photoelectric converting portion to the charge transfer path, wherein the gate electrode comprises polysilicon having a different conductive type from that of a semiconductor region forming a charge storing portion of the charge transfer path.
摘要翻译：固态成像装置包括：设置在半导体衬底上的光电转换部; 形成在与光电转换部相邻的位置的电荷传输路径，其接收在光电转换部中产生的信号电荷，并沿预定方向传送信号电荷; 以及栅极电极，其将信号电荷从光电转换部分传送到电荷传输路径，其中栅电极包括与形成电荷转移路径的电荷存储部分的半导体区域的导电类型不同的多晶硅。

2. 发明授权

US07274052B2 CCD charge-splitter adjustment by static charge gradient 失效
公开(公告)号：US07274052B2
公开(公告)日：2007-09-25
申请号：US11175975
申请日：2005-07-06
申请人： Michael P. Anthony , Edward Kohler
发明人： Michael P. Anthony , Edward Kohler
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： H01L29/768 , H01L29/1062 , H01L29/76858 , H01L29/76891
摘要： A charge splitter for separating an incoming charge packet into two outgoing packets while the charge is in a static state, i.e., not while it is flowing down a channel or over a barrier. A splitting gate may have a biasing charge impressed upon it, such as via the application of voltage or current sources to opposite ends thereof, applying a bias to a semiconductor body portion of the gate structure, or by physically separate the splitting gate into multiple sections that each have different applied voltages or currents When discharge barrier gates are operated, different amounts of charge will thus flow to different output storage gates.

3. 发明授权

US4963952A Multipinned phase charge-coupled device 失效
标题翻译：多相电荷耦合器件
公开(公告)号：US4963952A
公开(公告)日：1990-10-16
申请号：US321739
申请日：1989-03-10
申请人： James R. Janesick
发明人： James R. Janesick
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： H01L29/76858 , H01L27/1464 , H01L27/14831
摘要： A back illuminated, buried channel, multiphase charge-coupled device for imaging has a photosensitive volume bounded by silicon dioxide layers on both the front and back. The dark noise generated by these interfaces with the photosensitive volume is reduced by negative bias potential pinning the front at about -6V and the back at about -0.4V. To create fixed barrier phases at the front for accumulation within each pixel comprised of multiphase gates, positive ions are implanted at one phase gate while the others are phase clocked into channel inversion. Otherwise the phase clock of at least one gate must be controlled to provide accumulation to provide a "partial-inversion" technique. The negative bias at the back may be varied to adjust the quantum efficiency of the device, thus providing electronic shuttering.
摘要翻译：用于成像的背照明，埋入通道，多相电荷耦合器件具有在前面和后面由二氧化硅层界定的感光体。由这些接口与感光体积产生的暗噪声通过负偏置电位减小，前置电压约为-6V，背面约为-0.4V。为了在由多相门组成的每个像素内的前端产生固定的屏障相，在一个相位栅极处注入正离子，而另一个相位被时钟转换成沟道反转。否则，必须控制至少一个栅极的相位时钟以提供积累以提供“部分反转”技术。可以改变背面的负偏压以调节器件的量子效率，从而提供电子快门。

4. 发明申请

US20100327327A1 PHOTOSENSITIVE CHARGE-COUPLED DEVICE COMPRISING VERTICAL ELECTRODES 有权
标题翻译：包含垂直电极的感光电荷耦合器件
公开(公告)号：US20100327327A1
公开(公告)日：2010-12-30
申请号：US12821820
申请日：2010-06-23
申请人： François Roy
发明人： François Roy
IPC分类号： H01L27/148 , H01L29/68
CPC分类号： H01L27/14812 , H01L29/76808 , H01L29/76816 , H01L29/7685 , H01L29/76858
摘要： A charge transfer device formed in a semiconductor substrate and including an array of electrodes forming rows and columns, wherein: the electrodes extend, in rows, in successive grooves with insulated walls, disposed in the substrate thickness and parallel to the charge transfer direction.
摘要翻译：一种电荷转移装置，其形成在半导体衬底中并且包括形成行和列的电极阵列，其中：电极以具有绝缘壁的连续凹槽中延伸设置在基板厚度上并平行于电荷传输方向。

5. 发明申请

US20060170002A1 Adjustable CCD charge splitter 失效
标题翻译：可调CCD电荷分配器
公开(公告)号：US20060170002A1
公开(公告)日：2006-08-03
申请号：US11177153
申请日：2005-07-06
申请人： Michael Anthony , Edward Kohler
发明人： Michael Anthony , Edward Kohler
IPC分类号： H01L21/00 , H01L29/732
CPC分类号： H01L29/76858 , G11C19/285 , H01L27/14812 , H01L29/76816
摘要： An adjustable charge coupled device (CCD) charge splitter includes a channel control structure and an associated plurality of output channels. Control signals applied to the channel control structure determine an amount of charge, which passes into each one of the plurality of output channels.
摘要翻译：可调电荷耦合器件（CCD）电荷分配器包括通道控制结构和相关联的多个输出通道。施加到信道控制结构的控制信号确定进入多个输出信道中的每一个的电荷量。

6. 发明授权

US5760431A Multidirectional transfer charge-coupled device 失效
标题翻译：多向传输电荷耦合器件
公开(公告)号：US5760431A
公开(公告)日：1998-06-02
申请号：US708610
申请日：1996-09-05
申请人： Eugene D. Savoye , Barry E. Burke , John Tonry
发明人： Eugene D. Savoye , Barry E. Burke , John Tonry
IPC分类号： H01L27/148 , H01L29/10 , H01L29/768
CPC分类号： H01L29/76858 , H01L27/1464 , H01L27/14831 , H01L29/1062
摘要： A multidirectional charge transfer device configured in a charge storage medium. The device includes an array of charge storage regions. Each of said charge storage regions includes a plurality of first gates, each of which is arranged in a first portion of each charge storage region, a plurality of second gates, each of which is arranged in a second portion of each charge storage region, a plurality of third gates, each of which is arranged in a third portion of each charge storage region, and a plurality of fourth gates, each of which is arranged in a fourth portion of each charge storage region. The plurality of gates and charge storage regions are configured to define at least three bidirectional charge transfer paths which are noncollinear with respect to each other. The plurality of gates are sequentially biased to establish charge transfer along one of said bidirectional charge transfer paths and forming blocking potentials to charge transfer in the remaining charge transfer paths.
摘要翻译：一种配置在电荷存储介质中的多向电荷转移装置。该装置包括电荷存储区域的阵列。每个所述电荷存储区域包括多个第一栅极，每个第一栅极布置在每个电荷存储区域的第一部分中，多个第二栅极，每个第二栅极布置在每个电荷存储区域的第二部分中，多个第三栅极，每个第三栅极布置在每个电荷存储区域的第三部分中，以及多个第四栅极，每个栅极布置在每个电荷存储区域的第四部分中。多个栅极和电荷存储区被配置为限定相对于彼此非共线的至少三个双向电荷传输路径。多个栅极被顺序地偏置以沿着所述双向电荷转移路径之一建立电荷转移，并形成阻挡电位以在剩余电荷转移路径中进行电荷转移。

7. 发明授权

US4266146A Charge transfer devices having switchable blocking electrodes 失效
标题翻译：电荷转移装置具有可切换的阻挡电极
公开(公告)号：US4266146A
公开(公告)日：1981-05-05
申请号：US948281
申请日：1978-10-03
申请人： Arthur H. M. Van Roermund
发明人： Arthur H. M. Van Roermund
IPC分类号： H03M1/44 , G11C11/34 , G11C11/56 , G11C19/28 , G11C27/00 , G11C27/04 , H01L21/339 , H01L27/105 , H01L29/10 , H01L29/762 , H01L29/768 , H01L29/78 , H03H15/02 , H03M1/00
CPC分类号： G11C11/34 , G11C19/28 , G11C19/285 , G11C19/287 , G11C27/00 , G11C27/04 , H01L27/1057 , H01L29/1062 , H01L29/76858 , H01L29/78 , H03H15/02
摘要： A charge transfer device having one or more control electrodes connected to switching means so that the electrode can perform two functions. Normally the electrode is used for charge transfer but it may be switched to act as a blocking electrode for blocking the charge present underneath it for one or more clock phases. This permits the device to be formed as a filter, an analog-to-digital converter or digital-to-analog converter in a simple and inexpensive manner. The charge transfer channel may be split into sections using isolation diffusions.
摘要翻译：一种电荷转移装置，具有连接到开关装置的一个或多个控制电极，使得电极可以执行两种功能。通常电极用于电荷转移，但是可以将其切换为用于阻挡其下面存在的电荷的一个或多个时钟相的阻断电极。这允许以简单且廉价的方式将器件形成为滤波器，模数转换器或数模转换器。可以使用隔离扩散将电荷转移通道分成多个部分。

8. 发明授权

US07154134B2 Adjustable CCD charge splitter 失效
公开(公告)号：US07154134B2
公开(公告)日：2006-12-26
申请号：US11177153
申请日：2005-07-06
申请人： Michael P. Anthony , Edward J. Kohler
发明人： Michael P. Anthony , Edward J. Kohler
IPC分类号： H01L29/765
CPC分类号： H01L29/76858 , G11C19/285 , H01L27/14812 , H01L29/76816
摘要： An adjustable charge coupled device (CCD) charge splitter includes a channel control structure and an associated plurality of output channels. Control signals applied to the channel control structure determine an amount of charge, which passes into each one of the plurality of output channels.

9. 发明授权

US06573541B1 Charge coupled device with channel well 有权
标题翻译：电荷耦合器件通道良好
公开(公告)号：US06573541B1
公开(公告)日：2003-06-03
申请号：US09670595
申请日：2000-09-29
申请人： William A. Klaasen , Gary D. Pittman , Jed H. Rankin
发明人： William A. Klaasen , Gary D. Pittman , Jed H. Rankin
IPC分类号： H01L27148
CPC分类号： H01L29/76858 , H01L27/14887
摘要： A solid-state CCD device suitable for forming into arrays and for use with suitable hardware to form video image capture devices and methods for fabricating same are provided.
摘要翻译：提供了适合于形成阵列并与合适的硬件一起使用以形成视频图像捕获装置的固态CCD装置及其制造方法。

10. 发明授权

US4809048A Charge-coupled device having channel region with alternately changing potential in a direction perpendicular to charge transfer 失效
标题翻译：电荷耦合器件具有在垂直于电荷转移的方向上具有交替变化的电位的沟道区
公开(公告)号：US4809048A
公开(公告)日：1989-02-28
申请号：US013189
申请日：1987-02-09
申请人： Masafumi Kimata , Natsuro Tsubouchi
发明人： Masafumi Kimata , Natsuro Tsubouchi
IPC分类号： H01L29/772 , H01L21/339 , H01L27/148 , H01L29/10 , H01L29/423 , H01L29/76 , H01L29/762 , H01L29/768 , H01L29/78 , G11C19/28
CPC分类号： H01L29/42396 , H01L29/1062 , H01L29/76858
摘要： A charge-coupled device comprises a p type silicon substrate (130), a plurality of n type impurity regions (121) of a high impurity concentration, a plurality of n type impurity regions (140) of a low impurity concentration, a silicon oxide film (150) for defining a channel region (10), a gate oxide film (110), a plurality of gate electrodes (21, 31, 41, 51, 22, 32, 42 and 52) and clock bus lines (70, 80, 90 and 100) for applying a clock signal to the respective gate electrodes. The n type impurity regions (121) and (140) are formed alternately in the channel region (10) along a direction perpendicular to the charge transfer direction, whereby the potential in the channel region (10) changes in the above described perpendicular direction. The change of the potential causes a strong electric field in the channel region (10) in the above described perpendicular direction, which serves to prevent carriers from freezing to an impurity level at a low temperature. Thus, the transfer efficiency of carriers is improved.
摘要翻译：电荷耦合器件包括ap型硅衬底（130），杂质浓度高的多个n型杂质区（121），杂质浓度低的多个n型杂质区（140），氧化硅膜（150），用于限定沟道区（10），栅极氧化膜（110），多个栅电极（21,31,41,51,22,32,32和52）和时钟总线（70,80），90和100），用于将时钟信号施加到各个栅电极。 n型杂质区域（121）和（140）沿着与电荷传输方向垂直的方向在沟道区域（10）中交替地形成，由此沟道区域（10）中的电位在上述垂直方向上变化。电位的变化在上述垂直方向上在沟道区域（10）中产生强电场，其用于防止载流子在低温下冻结到杂质水平。因此，载波的传送效率提高。

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