
基本信息:
- 专利标题: ORGANIC CIS IMAGE SENSOR
- 申请号:US17772907 申请日:2020-07-27
- 公开(公告)号:US20220344390A1 公开(公告)日:2022-10-27
- 发明人: Akira FURUKAWA , Sho NISHIDA , Hideaki TOGASHI , Takushi SHIGETOSHI , Shinpei FUKUOKA , Junpei YAMAMOTO
- 申请人: SONY SEMICONDUCTOR SOLUTIONS CORPORATION , SONY GROUP CORPORATION
- 申请人地址: JP Kanagawa; JP Tokyo
- 专利权人: SONY SEMICONDUCTOR SOLUTIONS CORPORATION,SONY GROUP CORPORATION
- 当前专利权人: SONY SEMICONDUCTOR SOLUTIONS CORPORATION,SONY GROUP CORPORATION
- 当前专利权人地址: JP Kanagawa; JP Tokyo
- 优先权: JP2019-196273 20191029
- 国际申请: PCT/JP2020/028664 WO 20200727
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H04N5/361 ; H04N5/369 ; H01L27/148
摘要:
To reduce a dark current of an image sensor including a photoelectric conversion unit disposed on a back surface of a semiconductor substrate.
The image sensor includes a photoelectric conversion unit, a through-electrode, a charge holding unit, a back-side high impurity concentration region, and a front-side high impurity concentration region. The photoelectric conversion unit is disposed on a back surface of a semiconductor substrate and performs photoelectric conversion of incident light. The through-electrode is formed in a shape penetrating from the back surface to a front surface of the semiconductor substrate and transmits a charge generated by the photoelectric conversion. The charge holding unit is disposed on the front surface of the semiconductor substrate and holds the transmitted charge. The back-side high impurity concentration region is disposed in a region adjacent to the through-electrode on the back surface of the semiconductor substrate and is formed to have a higher impurity concentration than an impurity concentration of a region adjacent to the through-electrode at the central portion of the semiconductor substrate. The front-side high impurity concentration region is disposed in a region adjacent to the through-electrode on the front surface of the semiconductor substrate and is formed to have a higher impurity concentration than the impurity concentration of the region adjacent to the through-electrode at the central portion of the semiconductor substrate.
The image sensor includes a photoelectric conversion unit, a through-electrode, a charge holding unit, a back-side high impurity concentration region, and a front-side high impurity concentration region. The photoelectric conversion unit is disposed on a back surface of a semiconductor substrate and performs photoelectric conversion of incident light. The through-electrode is formed in a shape penetrating from the back surface to a front surface of the semiconductor substrate and transmits a charge generated by the photoelectric conversion. The charge holding unit is disposed on the front surface of the semiconductor substrate and holds the transmitted charge. The back-side high impurity concentration region is disposed in a region adjacent to the through-electrode on the back surface of the semiconductor substrate and is formed to have a higher impurity concentration than an impurity concentration of a region adjacent to the through-electrode at the central portion of the semiconductor substrate. The front-side high impurity concentration region is disposed in a region adjacent to the through-electrode on the front surface of the semiconductor substrate and is formed to have a higher impurity concentration than the impurity concentration of the region adjacent to the through-electrode at the central portion of the semiconductor substrate.
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
--------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的;包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
----------H01L27/144 | ..由辐射控制的器件 |
------------H01L27/146 | ...图像结构 |