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1. 发明授权

US07777257B2 Bipolar Schottky diode and method 有权
标题翻译：双极肖特基二极管及方法
公开(公告)号：US07777257B2
公开(公告)日：2010-08-17
申请号：US11674886
申请日：2007-02-14
申请人： Vishnu K. Khemka , Amitava Bose , Todd C. Roggenbauer , Ronghua Zhu
发明人： Vishnu K. Khemka , Amitava Bose , Todd C. Roggenbauer , Ronghua Zhu
IPC分类号： H01L29/317 , H01L21/42
CPC分类号： H01L29/872 , H01L29/0634 , H01L29/402 , H01L29/456 , H01L29/47 , H01L29/66143
摘要： A low leakage bipolar Schottky diode (20, 40, 87) is formed by parallel lightly doped N (32, 52, 103) and P (22, 42, 100) regions adapted to form superjunction regions. First ends of the P regions (22, 42, 100) are terminated by P+ layers (21, 41, 121) and second, opposed ends of the N regions (32, 52, 103) are terminated by N+ layers (31, 51, 131). Silicide layers (24, 34, 44, 54, 134, 124) are provided in contact with both ends of the parallel N and P regions (22, 32, 42, 52, 100, 103), thereby forming at the first end ohmic contacts (28, 48) with the P+ regions (21, 41, 121) and Schottky contacts (37, 57) with the N regions 32, 52, 103) and at the second, opposite end, ohmic contacts (38, 58) with the N+ regions (31, 51, 131) and Schottky contacts (27, 47) with the P regions (22, 42, 100). When forward biased current flows in both N (32, 52) and P (22, 42) regions thereby reducing the forward drop. When reverse biased, a substantial portion of the voltage is dropped across the lightly doped N (32, 52) and P (22, 42) superjunction regions, thereby significantly reducing the reverse leakage.
摘要翻译：通过平行轻掺杂N（32,52,103）和适于形成超结区的P（22,42,100）区域形成低漏极双极肖特基二极管（20,40,87）。 P区域（22,42,100）的第一端由P +层（21,41,121）端接，并且N区域（32,52,103）的相对端由N +层（31,51 ，131）。提供与平行N和P区（22,32,42,52,100,103）的两端接触的硅化物层（24,34,44,54,134,124），从而在第一端形成欧姆具有P +区域（21,41,121）的触点（28,48）和具有N个区域32,52,103的肖特基触头（37,57）），并且在第二相对端，欧姆接触件（38,58）与P区（22,42,100）的N +区（31,51,131）和肖特基接触（27,47）。当正向偏置电流在N（32,52）和P（22,42）区域中流动时，从而减少向下的下降。当反向偏置时，电压的大部分在轻掺杂的N（32,52）和P（22,42）超结区域下降，从而显着减少反向泄漏。

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