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    • 4. 发明申请
    • Chip-Resistor Manufacturing Method
    • 芯片电阻制造方法
    • US20160163433A1
    • 2016-06-09
    • US14905459
    • 2014-07-09
    • KOA CORPORATION
    • Yuya TAKEUETodaro UEGANEKentaro MATSUMOTO
    • H01C17/28H01C17/22H01C17/06
    • H01C17/28H01C17/006H01C17/06H01C17/22H01C17/242
    • The invention is to provide a chip-resistor manufacturing method in which chipping can be restrained from occurring in an intersection portion between each primary segmentation groove and each secondary segmentation groove. Primary segmentation grooves 21 each having an uneven depth are formed in one surface of a large substrate 20. Pairs of surface electrodes 3 extending across the primary segmentation grooves 21, resistive elements 5 each striding between the surface electrodes 3 paired with each other, etc. are formed in the one surface of the large substrate 20. Then, primary segmentation is performed on the large substrate 20 along the primary segmentation grooves 21 so as to open the surface side where the surface electrodes 3, the resistive elements 5, etc. are formed. Thus, a plurality of strip-like substrates 30 are obtained from the large substrate 20. During the primary segmentation, each primary segmentation groove 21 begins to break from electrode formation regions which are small in groove depth but strong, and then breaks in intersection portions which are large in groove depth but brittle. Accordingly, it is possible to perform primary segmentation on the primary segmentation groove 21 without applying a large load to the intersection portions which are low in strength. Thus, it is possible to prevent chipping from occurring in the intersection portions.
    • 本发明是提供一种芯片电阻器制造方法,其中可以抑制在每个主分割槽和每个二次分割槽之间的交叉部分发生碎裂。 每个具有不均匀深度的主分割槽21形成在大基板20的一个表面中。一对表面电极3延伸穿过主分割凹槽21,电阻元件5各自跨越彼此配对的表面电极3等。 形成在大基板20的一个表面上。然后,沿着主分割槽21对大基板20进行主分割,以便打开表面电极3,电阻元件5等的表面侧 形成。 因此,从大基板20获得多个条状基板30.在主分割期间,每个主分割凹槽21开始从凹槽深度小但较强的电极形成区域断裂,然后在交叉部分中断 其深度大,但脆。 因此,可以对主分割槽21进行主分割,而不对强度低的交点进行大的负载。 因此,可以防止在交叉部分发生切屑。
    • 7. 发明授权
    • Semiconductor heater and method for making
    • 半导体加热器及其制造方法
    • US6023091A
    • 2000-02-08
    • US565735
    • 1995-11-30
    • Daniel J. KochKenneth G. GoldmanKeith G. KamekonaMark D. Summers
    • Daniel J. KochKenneth G. GoldmanKeith G. KamekonaMark D. Summers
    • H01C17/22B41J2/335H01L21/822H01L27/04H01L29/00
    • B41J2/3357B41J2/33585
    • A sealable air gap (14) is formed between a heating element (16) and a base (11) to improve the thermal isolation of a semiconductor heater (10). A top layer (17) is formed over the heating element (16) which seals the air gap (14) so that the sealable air gap (14) can be at either atmospheric pressure or under a vacuum. The semiconductor heater (10) can be used in a variety of applications including as a heat source to adjust the resistivity of an overlying resistive layer (18). The embodiments of the semiconductor heater (10) also include a chemical sensor (20). Heat from a heating element (26) is used to keep an overlying layer of chemical sensing material (28) at an optimal temperature. The embodiments of the present invention also include a transducer (40) to heat a fluid (52) in a well (55) such as in an ink jet application.
    • 在加热元件(16)和基座(11)之间形成可密封气隙(14),以改善半导体加热器(10)的热隔离。 在加热元件(16)上形成顶层(17),其密封气隙(14),使得可密封气隙(14)可以处于大气压力或真空下。 半导体加热器(10)可以用于各种应用,包括作为热源来调节上覆电阻层(18)的电阻率。 半导体加热器(10)的实施例还包括化学传感器(20)。 使用来自加热元件(26)的热量将化学感测材料(28)的上层保持在最佳温度。 本发明的实施例还包括用于加热诸如喷墨应用中的井(55)中的流体(52)的换能器(40)。
    • 10. 发明授权
    • Method of manufacturing wound items from coaxial microwire and device
therefor
    • 从同轴微线制造伤口物品的方法及其装置
    • US4372497A
    • 1983-02-08
    • US205445
    • 1980-09-08
    • Sergei N. DimitrakiLolita S. Dimitraki
    • Sergei N. DimitrakiLolita S. Dimitraki
    • H01F41/06H01C17/04H01C17/22H01C17/24H01F41/04
    • H01C17/04H01C17/24H01F41/04Y10T29/49004Y10T29/49071Y10T29/49096
    • A method of manufacturing wound items from coaxial microwire by the use of a device executing said method, which essentially consists in determining frequency f.sub.1 of a generator at which a phase shift between current vector in a sheath and voltage vector between the sheath and conductor of a microwire of the item being manufactured equals 180.degree. when the item being manufactured has a parameter exceeding a corresponding rating. When the parameter of the item fully complies with the corresponding rating, frequency f.sub.2 of a second generator is set so that a phase shift between the current vector in the sheath and the voltage vector between the sheath and the conductor of the microwire is 180.degree.. A frequency changer is then used to convert voltages at f.sub.1 and f.sub.2 into a voltage at f.sub.X which is fed to the sheath of the item. A drive is utilized to unwind the microwire, while an amplifier and converter unit continuously compares a current vector phase in the sheath of the unwound microwire with a voltage vector phase between the conductor and the sheath of said microwire. The unwinding of the microwire is stopped after said phase difference reaches 180.degree..
    • PCT No.PCT / SU80 / 00001 Sec。 371日期1980年9月8日第 102(e)1980年9月3日PCT PCT 1980年1月8日PCT公布。 出版物WO80 / 01431 日本1980年7月10日。一种通过使用执行所述方法的装置从同轴微线制造伤口物品的方法,其基本上在于确定发生器的频率f1,其中护套中的电流矢量与电压矢量 当制造的物品的参数超过相应的等级时,所制造的物品的微线的护套和导体之间的距离等于180°。 当该项目的参数完全符合相应的等级时,第二发电机的频率f2被设定为使得护套中的电流矢量与护套与微线的导体之间的电压矢量之间的相移为180度。 然后使用变频器将f1和f2处的电压转换成fX的电压,该电压被馈送到物品的护套。 驱动器用于展开微线,而放大器和转换器单元将展开的微线的护套中的电流矢量相位与导线与所述微线的护套之间的电压矢量相位连续地进行比较。 在所述相位差达到180度后,停止微丝的退绕。