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2. 发明授权

US06209113B1 Method and apparatus for performing error correction on data read from a multistate memory 有权
标题翻译：对从多态存储器读取的数据执行纠错的方法和装置
公开(公告)号：US06209113B1
公开(公告)日：2001-03-27
申请号：US09144546
申请日：1998-09-01
申请人： Frankie F. Roohparvar
发明人： Frankie F. Roohparvar
IPC分类号： G11C1602
CPC分类号： G06F11/1072 , G11C7/1006 , G11C11/5621 , G11C11/5642 , G11C29/00
摘要： A method and apparatus for performing error correction on data read from a multistate memory are disclosed. According to one embodiment of the present invention a cell in a memory device is read to generate a read voltage determined by a state of the cell and one of an ordered succession of encoded signals is selected based on the read voltage, where each encoded signal corresponds to a field of bits and adjacent encoded signals correspond to respective fields of bits that are different only in a single bit. The selected encoded signal is decoded to generate a field of uncorrected bits and a field of syndrome bits indicating any error in the uncorrected bits. The syndrome bits are decoded to generate correction bits to correct the error, and the uncorrected bits are combined with the correction bits to generate a field of corrected bits.
摘要翻译：公开了一种用于对从多态存储器读取的数据执行纠错的方法和装置。根据本发明的一个实施例，读取存储器件中的单元以产生由单元的状态确定的读取电压，并且基于读取电压来选择编码信号的有序序列中的一个，其中每个编码信号对应于到比特的字段和相邻的编码信号对应于仅在单个比特中不同的比特的相应字段。所选择的编码信号被解码以产生未校正位的字段和指示未校正位中的任何错误的校正子位的字段。对校正位进行解码以产生校正位以校正误差，并且将未校正位与校正位组合以产生校正位的场。

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