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    • 3. 发明授权
    • Method for heat treating materials at high temperatures, and a furnace
bottom construction for high temperature furnaces
    • 高温处理材料的方法和高温炉的炉底结构
    • US6072821A
    • 2000-06-06
    • US88919
    • 1998-06-02
    • Niclas Axelsson
    • Niclas Axelsson
    • F27B5/08F27B5/14F27D1/00F27D1/16F27D5/00H05B3/60
    • F27B5/08F27D1/0043F27D5/00F27B2005/143
    • A method and apparatus for heat-treating a material at high temperatures wherein the material from which the bottom of a furnace chamber is made forms a eutectic with the material to be heat-treated, and does so at a temperature lower than the heat treatment temperature. A part of the furnace chamber bottom, which part can include the whole or a portion of the furnace chamber bottom, and on which the material to be heat-treated rests is formed at least in part of a material that has the same chemical composition as, or a chemical composition similar to, the chemical composition of the material to be heat-treated. The furnace bottom part on which the material to be heat-treated rests is positioned so that it has no physical contact with the remaining furnace bottom material within the furnace chamber. The furnace bottom part is positioned such that the contact location between the bottom part and the furnace lining material at which the bottom part is arranged, will assume during the heat-treatment process a temperature that is lower than the temperature at which a molten phase will be formed between the materials that are in contact with one another at the contact location.
    • 一种用于在高温下热处理材料的方法和装置,其中制造炉室的底部的材料与待热处理的材料形成共晶,并且在低于热处理温度的温度下进行 。 炉室底部的一部分,其部分可以包括炉室底部的整个或一部分,并且待热处理的材料搁置在其上的部分至少部分地由具有与 ,或类似于待热处理材料的化学成分的化学组成。 被热处理的材料放置在其上的炉底部分被定位成使其与炉室内剩余的炉底材料没有物理接触。 炉底部分被定位成使得底部部分与底部部分布置的炉衬材料之间的接触位置在热处理过程中将呈现出比熔融相温度低的温度 形成在接触位置处彼此接触的材料之间。
    • 4. 发明授权
    • Continuous pressure cooker and cooler with controlled liquid flow
    • 连续压力锅和冷却器,控制液体流动
    • US4169408A
    • 1979-10-02
    • US781405
    • 1977-03-25
    • Samuel A. Mencacci
    • Samuel A. Mencacci
    • A23L3/36A23L3/00A23L3/02A23L3/12A23L3/14B65B55/04B65B55/06F25D1/02F27B5/08A47J27/08
    • A23L3/025A23L3/003A23L3/02A23L3/12A23L3/14
    • Method and apparatus for continuously processing filled containers with liquid heat treatment mediums maintained under superatmospheric pressure by an overriding air pressure. A minimum of liquid is used during processing with the liquid level being maintained above the containers at all times. The liquid is controllably circulated through container filled tunnels defined within carts, from one end of the tunnel to the other, to assure equal heat treatment of all containers in the batch of containers in each tunnel. The carts may either be non-agitating or agitating carts. One embodiment of the continuous pressure cooker and cooler includes a pressure vessel having two pressure locks to provide a pressure cooking chamber with high pressure cooling being performed in a mini-cooler defined by the outlet pressure lock followed by additional atmospheric cooling. Another embodiment of the invention comprises three pressure lock means to positively divide the pressure vessel into cooking and cooling chambers; and a third embodiment substitutes a plurality of baffles for the intermediate pressure lock thereby effectively dividing the pressure vessel into a cooking chamber and cooling chamber.
    • 用于通过超压空气压力连续处理在超大气压下保持的液体热处理介质的填充容器的方法和装置。 在处理过程中使用最少的液体,液面始终保持在容器上方。 液体可控地循环通过在车内定义的容器填充的隧道,从隧道的一端到另一端,以确保在每个隧道中的批次容器中的所有容器的相等的热处理。 推车可能是非搅拌或搅拌车。 连续压力锅和冷却器的一个实施例包括具有两个压力锁的压力容器,以在由出口压力锁定以及额外的大气冷却所限定的微型冷却器中执行高压冷却以提供压力烹饪室。 本发明的另一个实施例包括三个压力锁定装置,用于将压力容器正向分成烹饪和冷却室; 并且第三实施例将多个挡板代替中间压力锁定,从而有效地将压力容器分成烹饪室和冷却室。
    • 10. 发明授权
    • Substrate processing apparatus, heating device, and semiconductor device manufacturing method
    • 基板加工装置,加热装置以及半导体装置的制造方法
    • US08030599B2
    • 2011-10-04
    • US12429462
    • 2009-04-24
    • Masakazu Shimada
    • Masakazu Shimada
    • F27B5/00F27B5/08F27B5/14C23C16/00
    • H01L21/67109
    • Provided are a substrate processing apparatus, a heating device, and a semiconductor device manufacturing method. The substrate processing apparatus comprises a process chamber configured to process a substrate. A heating element is installed at a peripheral side of the process chamber. An annular inner wall is installed at a peripheral side of the heating element. An annular outer wall is installed at a peripheral side of the inner wall with a space being formed therebetween. An annular cooling member is installed at the space for cooling. An actuating mechanism moves the cooling member between a contacting position where the cooling member makes contact with at least one of the inner wall and the outer wall and a non-contacting position where the cooling member does not make contact with any one of the inner wall and the outer wall. A control unit controls at least the actuating mechanism.
    • 提供了一种基板处理装置,加热装置和半导体装置的制造方法。 基板处理装置包括被配置为处理基板的处理室。 加热元件安装在处理室的周边。 环形内壁安装在加热元件的周边。 环形外壁安装在内壁的周边,其间形成有空间。 环形冷却件安装在冷却空间。 致动机构将冷却部件移动到冷却部件与内壁和外壁之中的至少一个接触的接触位置和冷却部件不与内壁中的任何一个接触的非接触位置 和外墙。 控制单元至少控制致动机构。