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1. 发明授权

US07951694B2 Semiconductor structure and method of manufacture of same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US07951694B2
公开(公告)日：2011-05-31
申请号：US12200188
申请日：2008-08-28
申请人： Stewart Edward Hooper , Jonathan Heffernan
发明人： Stewart Edward Hooper , Jonathan Heffernan
IPC分类号： H01L21/20
CPC分类号： H01L21/02461 , C30B23/02 , C30B25/02 , C30B29/40 , C30B29/403 , C30B33/02 , H01L21/02381 , H01L21/02458 , H01L21/02463 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L29/2003
摘要： A method of manufacturing a nitride semiconductor structure includes disposing a semiconductor substrate in a molecular beam epitaxy reactor; growing a wetting layer comprising AlxInyGa(1−(x+y))As(0≦x+y≦1) or AlxInyGa(1−(x+y))P(0≦x+y≦1) on the substrate; in-situ annealing the wetting layer; growing a first AlGaInN layer on the wetting layer using plasma activated nitrogen as the source of nitrogen with an additional flux of phosphorous or arsenic; and growing a second AlGaInN layer on the first AlGaInN layer using ammonia as a source of nitrogen.
摘要翻译：制造氮化物半导体结构的方法包括将半导体衬底设置在分子束外延反应器中; 在衬底上生长包含Al x In y Ga（1-（x + y））As（0＆amp; nE; x + y＆nlE; 1）或Al x In y Ga（1-（x + y））P（0和nlE; x + y和nlE; 1）原位退火润湿层; 使用等离子体活化氮作为氮源，再加入磷或砷的助熔剂，在润湿层上生长第一AlGaInN层; 以及使用氨作为氮源在所述第一AlGaInN层上生长第二AlGaInN层。

2. 发明授权

US08900489B2 II-III-N semiconductor nanoparticles and method of making same 有权
标题翻译： II-III-N半导体纳米颗粒及其制备方法
公开(公告)号：US08900489B2
公开(公告)日：2014-12-02
申请号：US13188713
申请日：2011-07-22
申请人： Peter Neil Taylor , Jonathan Heffernan , Stewart Edward Hooper , Tim Michael Smeeton
发明人： Peter Neil Taylor , Jonathan Heffernan , Stewart Edward Hooper , Tim Michael Smeeton
IPC分类号： H01B1/02 , C09K11/62 , H01L31/032
CPC分类号： H01L33/06 , C01B21/0615 , C01B21/0632 , C01B21/072 , C09K11/623 , H01L31/032 , H01L33/26 , Y02E10/549 , Y10S977/773
摘要： The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated. The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.
摘要翻译：本申请提供了氮化物半导体纳米颗粒，例如纳米晶体，其由II-III-N型新型化合物半导体族的新组合物形成，例如ZnGaN，ZnInN，ZnInGaN，ZnAlN，ZnAlGaN， ZnAlInN和ZnAlGaInN。这种类型的化合物半导体纳米晶体在现有技术中不是先前已知的。本发明还公开了作为II-III-N族半导体纳米晶体的亚组的II-N半导体纳米晶体，例如ZnN纳米晶体。可以控制新型和新型II-III-N化合物半导体纳米晶体的组成和尺寸，以便调整其带隙和发光性能。证明了紫外 - 可见红外波长范围内的高效发光。本发明的产品可用作诸如太阳能电池，发光二极管，激光二极管以及用作LED和发光EL显示器的发光磷光体材料的光电器件的组成。

3. 发明申请

US20120025146A1 II-III-N SEMICONDUCTOR NANOPARTICLES AND METHOD OF MAKING SAME 有权
标题翻译： II-III-N半导体纳米粒子及其制备方法
公开(公告)号：US20120025146A1
公开(公告)日：2012-02-02
申请号：US13188713
申请日：2011-07-22
申请人： Peter Neil Taylor , Jonathan Heffernan , Stewart Edward Hooper , Tim Michael Smeeton
发明人： Peter Neil Taylor , Jonathan Heffernan , Stewart Edward Hooper , Tim Michael Smeeton
IPC分类号： C01B21/00 , C30B7/14 , C01F7/00 , C01F5/00 , C01B21/06 , C01G15/00 , B82Y40/00 , B82Y30/00
CPC分类号： H01L33/06 , C01B21/0615 , C01B21/0632 , C01B21/072 , C09K11/623 , H01L31/032 , H01L33/26 , Y02E10/549 , Y10S977/773
摘要： The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals.The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.
摘要翻译：本申请提供了氮化物半导体纳米颗粒，例如纳米晶体，其由II-III-N型新型化合物半导体族的新组合物形成，例如ZnGaN，ZnInN，ZnInGaN，ZnAlN，ZnAlGaN， ZnAlInN和ZnAlGaInN。这种类型的化合物半导体纳米晶体在现有技术中不是先前已知的。本发明还公开了作为II-III-N族半导体纳米晶体的亚组的II-N半导体纳米晶体，例如ZnN纳米晶体。可以控制新型和新型II-III-N化合物半导体纳米晶体的组成和尺寸，以便调整其带隙和发光性能。证明了紫外 - 可见红外波长范围内的高效发光。本发明的产品可用作诸如太阳能电池，发光二极管，激光二极管以及用作LED和发光EL显示器的发光磷光体材料的光电器件的组成。

4. 发明授权

US07629237B2 MBE growth of a semiconductor layer structure 失效
标题翻译：半导体层结构的MBE增长
公开(公告)号：US07629237B2
公开(公告)日：2009-12-08
申请号：US10525499
申请日：2003-08-18
申请人： Valerie Bousquet , Stewart Edward Hooper , Jennifer Mary Barnes , Jonathan Heffernan
发明人： Valerie Bousquet , Stewart Edward Hooper , Jennifer Mary Barnes , Jonathan Heffernan
IPC分类号： H01L21/36 , H01L21/20
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L33/007
摘要： A method of MBE growth of a semiconductor layer structure comprises growing a first (Al,Ga)N layer (step 13) over a substrate at the first substrate temperature (T1) using ammonia as the nitrogen precursor. The substrate is then cooled (step 14) to a second-substrate temperature (T2) which is lower than the first substrate temperature. An (In,Ga)N quantum well structure is then grown (step 15) over the first (Al,Ga)N layer by MBE using ammonia as the nitrogen precursor. The supply of ammonia to the substrate is maintained continuously during the first growth step, the cooling step, and the second growth step. After completion of the growth of the (In,Ga)N quantum well structure, the substrate may be heated to a third temperature (T3) which is greater than the second substrate temperature (T2). A second (Al,Ga)N layer is then grown over the (In,Ga)N quantum well structure (step 17).
摘要翻译：半导体层结构的MBE生长的方法包括使用氨作为氮前体，在第一衬底温度（T1）的衬底上生长第一（Al，Ga）N层（步骤13）。然后将衬底冷却（步骤14）至低于第一衬底温度的第二衬底温度（T2）。然后通过使用氨作为氮前体的MBE在第一（Al，Ga）N层上生长（In，Ga）N量子阱结构（步骤15）。在第一生长步骤，冷却步骤和第二生长步骤期间，向基材供应氨持续保持。在（In，Ga）N量子阱结构的生长完成之后，衬底可以被加热到大于第二衬底温度（T2）的第三温度（T3）。然后在（In，Ga）N量子阱结构上生长第二（Al，Ga）N层（步骤17）。

5. 发明授权

US07358112B2 Method of growing a semiconductor layer 有权
标题翻译：生长半导体层的方法
公开(公告)号：US07358112B2
公开(公告)日：2008-04-15
申请号：US10480203
申请日：2002-06-13
申请人： Jennifer Mary Barnes , Valerie Bousquet , Stewart Edward Hooper , Jonathan Heffernan
发明人： Jennifer Mary Barnes , Valerie Bousquet , Stewart Edward Hooper , Jonathan Heffernan
IPC分类号： H01L21/00
CPC分类号： H01L21/02579 , C30B23/02 , C30B29/40 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02631 , Y10S438/933
摘要： A method of growing a p-type nitride semiconductor material having magnesium as a p-type dopant by molecular beam epitaxy (MBE), comprises supplying ammonia gas, gallium and magnesium to an MBE growth chamber containing a substrate so as to grow a p-type nitride semiconductor material over the substrate. Magnesium is supplied to the growth chamber at a beam equivalent pressure of at least 1 10-9 mbar, and preferably in the range from 1 10-9 mbar to 1 10-7 mbar during the growth process. This provides p-type GaN that has a high concentration of free charge carriers and eliminates the need to activate the magnesium dopant atoms by annealing or irradiating the material.
摘要翻译：通过分子束外延（MBE）生长具有镁作为p型掺杂剂的p型氮化物半导体材料的方法包括向含有衬底的MBE生长室供给氨气，镓和镁，以生长p型氮化物半导体材料，氮化物半导体材料。在生长过程中，以至少1×10 -9毫巴的束当量压力，优选在1×10 -9毫巴至1×10-7毫巴的范围内向生长室供应镁。这提供了具有高浓度的自由电荷载流子的p型GaN，并且不需要通过退火或照射材料来激活镁掺杂剂原子。

6. 发明授权

US07263115B2 Semiconductor device and a method of manufacturing a semiconductor device 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07263115B2
公开(公告)日：2007-08-28
申请号：US10815603
申请日：2004-04-01
申请人： Rakesh Roshan , Brendan Poole , Stewart Edward Hooper , Jonathan Heffernan
发明人： Rakesh Roshan , Brendan Poole , Stewart Edward Hooper , Jonathan Heffernan
IPC分类号： H01S5/00
CPC分类号： H01S5/065
摘要： A semiconductor device comprises an active region (4), a cladding layer (5,7), and a saturable absorbing layer (6) disposed within the cladding layer. The saturable absorbing layer comprises at least one portion (11a) that is absorbing for light emitted by the active region and comprises at least portion (11b) that is not absorbing for light emitted by the active region.The fabrication method of the invention enables the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) to produced after the device structure has been fabricated. This allows the degree of overlap between the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) and the optical mode of the laser to be altered after the device has been grown.
摘要翻译：半导体器件包括有源区（4），包覆层（5,7）和设置在包覆层内的可饱和吸收层（6）。可饱和吸收层包括吸收由有源区发射的光的至少一部分（11a），并且包括至少部分（11b），该部分不吸收由有源区发射的光。本发明的制造方法能够在器件结构制造之后产生可饱和吸收层（6）的非吸收部分（11b）。这允许在器件生长之后，可饱和吸收层（6）的非吸收部分（11b）和激光器的光学模式之间的重叠程度将被改变。

7. 发明授权

US07115167B2 Method of growing a semiconductor multi-layer structure 失效
标题翻译：生长半导体多层结构的方法
公开(公告)号：US07115167B2
公开(公告)日：2006-10-03
申请号：US10079269
申请日：2002-02-19
申请人： Stewart Edward Hooper , Jennifer Mary Barnes , Valerie Bousquet , Jonathan Heffernan
发明人： Stewart Edward Hooper , Jennifer Mary Barnes , Valerie Bousquet , Jonathan Heffernan
IPC分类号： C30B25/04
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： The invention provides a method of growing an (In, Ga)N multiplayer structure by molecular beam epitaxy. Each GaN or InGaN layer in the multilayer structure is grown at a substrate temperature of at least 650° C., and this provides improved material quality. Ammonia gas is used as the source of nitrogen for the growth process. Ammonia and gallium are supplied to the growth chamber at substantially constant rates, and the supply rate of indium to the growth chamber is varied to select the desired composition for the layer being grown. This allows the structure to be grown at a substantially constant growth rate. The substrate temperature is preferably kept constant during the growth process, to avoid the need to interrupt the growth process to vary the substrate temperature between the growth of one layer and the growth of another layer.
摘要翻译：本发明提供通过分子束外延生长（In，Ga）N多层结构的方法。多层结构中的每个GaN或InGaN层在至少650℃的衬底温度下生长，这提供了改进的材料质量。氨气用作生长过程的氮源。氨和镓以基本恒定的速率供应到生长室，并且改变生长室的铟的供应速率以选择所生长层的期望组成。这允许以基本上恒定的生长速率生长结构。衬底温度优选在生长过程中保持恒定，以避免需要中断生长过程以改变一层生长和另一层生长之间的衬底温度。

8. 发明申请

US20120204957A1 METHOD FOR GROWING AlInGaN LAYER 审中-公开
标题翻译：生长AlInGaN层的方法
公开(公告)号：US20120204957A1
公开(公告)日：2012-08-16
申请号：US13024377
申请日：2011-02-10
申请人： David NICHOLLS , Tim Michael Smeeton , Valerie Berryman-Bousquet , Stewart Edward Hooper
发明人： David NICHOLLS , Tim Michael Smeeton , Valerie Berryman-Bousquet , Stewart Edward Hooper
IPC分类号： H01L21/20 , H01L29/20 , H01L31/0304 , H01L33/32
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02458 , H01L21/02631 , H01L29/2003 , H01L31/03044 , H01L31/03048 , H01L31/1848 , H01L31/1856 , H01L33/0075 , Y02E10/544
摘要： A method for growing an In(x)Al(y)Ga(1−x−y)N layer (where x is greater than zero and less than or equal to one, y is greater than or equal to zero and less than or equal to one and the sum of x and y is less than or equal to one). The method includes supplying plasma-activated nitrogen atoms as a source of nitrogen for the In(x)Al(y)Ga(1−x−y)N layer to a growth surface, where a flux of the plasma-activated nitrogen atoms supplied to the growth surface is at least four times higher than a total flux of aluminium and gallium atoms also supplied to the growth surface, where either the aluminium or gallium flux may or may not be zero; and simultaneously supplying indium atoms and nitrogen-containing molecules to the growth surface.
摘要翻译：用于生长In（x）Al（y）Ga（1-x-y）N层的方法（其中x大于零且小于或等于1，y大于或等于零且小于或等于0，等于1，x和y的和小于或等于1）。该方法包括将等离子体激活的氮原子作为In（x）Al（y）Ga（1-x-y）N层的氮源提供给生长表面，其中提供了等离子体激活的氮原子的通量生长表面比也提供给生长表面的铝和镓原子的总通量高至少四倍，其中铝或镓焊剂可以是或不是零; 同时向生长表面提供铟原子和含氮分子。

9. 发明授权

US07858962B2 AlInGaN light-emitting device 有权
标题翻译： AlInGaN发光器件
公开(公告)号：US07858962B2
公开(公告)日：2010-12-28
申请号：US12354317
申请日：2009-01-15
申请人： Katherine Louise Smith , Mathieu Xavier Sénès , Tim Michael Smeeton , Stewart Edward Hooper
发明人： Katherine Louise Smith , Mathieu Xavier Sénès , Tim Michael Smeeton , Stewart Edward Hooper
IPC分类号： H01L29/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/08 , H01L33/32 , H01S5/0213 , H01S5/341 , H01S5/3412
摘要： A semiconductor light-emitting device fabricated in the (Al,Ga,In)N materials system has an active region for light emission (3) comprising InGaN quantum dots or InGaN quantum wires. An AlGaN layer (6) is provided on a substrate side of the active region. This increases the optical output of the light-emitting device. This increased optical output is believed to result from the AlxGa1-xN layer serving, in use, to promote the injection of carriers into the active region.
摘要翻译：在（Al，Ga，In）N材料体系中制造的半导体发光器件具有包含InGaN量子点或InGaN量子线的用于发光的有源区（3）。在有源区的基板侧设置AlGaN层（6）。这增加了发光装置的光输出。这种增加的光输出被认为是由AlxGa1-xN层在使用中产生的，以促进载流子注入有源区。

10. 发明申请

US20090045394A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURE THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090045394A1
公开(公告)日：2009-02-19
申请号：US12189972
申请日：2008-08-12
申请人： Tim Michael Smeeton , Katherine Louise Smith , Mathieu Xavier Senes , Stewart Edward Hooper
发明人： Tim Michael Smeeton , Katherine Louise Smith , Mathieu Xavier Senes , Stewart Edward Hooper
IPC分类号： H01L33/00 , H01L31/0352 , H01L21/20
CPC分类号： H01L31/101 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L29/127 , H01L29/2003 , H01L33/06 , H01S5/3412 , H01S5/34333 , H01S5/4087
摘要： A method of manufacturing a semiconductor device comprises depositing a semiconductor layer over a semiconductor surface having at least one first region with a first (average surface lattice) parameter value and at least one second region having a second parameter value different from the first. The semiconductor layer is deposited to a thickness so self-organised islands form over both the first and second regions. The difference in the parameter value means the islands over the first region have a first average parameter value and the islands over the second region have a second average parameter value different from the first. A capping layer is deposited over islands and has a greater forbidden bandgap than the islands whereby the islands form quantum dots, which have different properties over the first and second regions due to difference(s) between the first and second region islands.
摘要翻译：一种制造半导体器件的方法包括在半导体表面上沉积半导体层，所述半导体表面具有至少一个具有第一（平均表面晶格）参数值的第一区域和至少一个第二区域，该第二区域具有与第一参数值不同的第二参数值。半导体层被沉积成厚度，从而在第一和第二区域上形成自组织的岛状物。参数值的差异意味着第一区域上的岛具有第一平均参数值，并且第二区域上的岛具有与第一区不同的第二平均参数值。覆盖层沉积在岛上并且具有比岛更大的禁止带隙，由此岛由于第一和第二区域之间的差异而形成量子点，其在第一和第二区域上具有不同的性质。

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