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1. 发明申请

US20030003523A1 Conductometric detection process 审中-公开
标题翻译：电导检测过程
公开(公告)号：US20030003523A1
公开(公告)日：2003-01-02
申请号：US10174869
申请日：2002-06-18
发明人： Mark Jensen
IPC分类号： C12Q001/26 , C25D003/46 , C12M001/34
CPC分类号： G01N33/581 , C12Q1/6832 , G01N27/041 , G01N33/5438 , C12Q2563/137 , C12Q2537/125
摘要： The present invention provides a method for determining in a sample the presence and the level of a substance to be detected that can specifically bind to a capture substance. The method involves providing complexes comprising the substance to be detected, the capture substance and an oxidative enzyme linked to the complexes on a base along a path defined by a pair of electrical conductors. The oxidative enzyme promotes amplifying deposition of a metal layer along the path such that the metal layer becomes more electrically conductive, thereby enhancing the detection sensitivity. One can determine the presence and the level of the detected substance by monitoring the current flow of an electric circuit that includes the path.
摘要翻译：本发明提供了一种用于在样品中测定可以特异性结合捕获物质的待检测物质的存在和水平的方法。该方法包括提供包含待检测物质的捕获物质，捕获物质和沿着由一对电导体限定的路径与基底上的复合物连接的氧化酶。氧化酶促进沿着路径放大金属层的沉积，使得金属层变得更加导电，从而提高检测灵敏度。可以通过监视包括路径的电路的电流来确定检测物质的存在和水平。

2. 发明申请

US20030066756A1 Plating bath and method for depositing a metal layer on a substrate 审中-公开
标题翻译：电镀浴和在基板上沉积金属层的方法
公开(公告)号：US20030066756A1
公开(公告)日：2003-04-10
申请号：US09971300
申请日：2001-10-04
申请人： Shipley Company, L.L.C.
发明人： David R. Gabe , Andrew J. Cobley , Leon R. Barstad , Mark J. Kapeckas , Erik Reddington , Wade Sonnenberg , Thomas Buckley
IPC分类号： C25D003/56 , C25D003/60 , C25D003/58 , C25D003/62 , C25D003/00 , C25D003/46 , C25D003/50 , C25D003/48 , C25D003/12 , C25D003/26 , C25D003/10 , C25D003/38
CPC分类号： C25D3/38 , C25D3/02 , H05K3/242
摘要： A metal plating bath and method for plating a metal on a substrate. The metal plating bath contains hydroxylamines that inhibit the consumption of additive bath components to improve the efficiency of metal plating processes. The additive bath components are added to metal plating baths to improve brightness of plated metal as well as the micro-throwing and macro-throwing power of the bath. In addition to brighteners, the additive bath components may include levelers, suppressors, hardeners, and the like. The hydroxylamines that inhibit additive consumption may be employed in metal plating baths for plating copper, gold, silver, platinum, palladium, cobalt, cadmium, nickel, bismuth, indium, tin, rhodium, iridium, ruthenium and alloys thereof.
摘要翻译：一种金属电镀浴和在基板上镀金属的方法。金属镀浴含有抑制添加剂浴组分消耗的羟胺，以提高金属电镀工艺的效率。将添加剂浴组分添加到金属电镀浴中以改善电镀金属的亮度以及镀液的微投掷和投掷抛光力。除了增白剂之外，添加剂浴组分可以包括矫平剂，抑制剂，硬化剂等。抑制添加剂消耗的羟胺可以用于镀铜，金，银，铂，钯，钴，镉，镍，铋，铟，锡，铑，铱，钌及其合金的金属电镀浴中。

3. 发明申请

US20030000846A1 Plating method 审中-公开
标题翻译：电镀方法
公开(公告)号：US20030000846A1
公开(公告)日：2003-01-02
申请号：US10139085
申请日：2002-05-04
申请人： Shipley Company, L.L.C.
发明人： Maria Anna Rzeznik , David L. Jacques
IPC分类号： C25D003/00 , C25D003/46
CPC分类号： H05K3/244 , C23C18/1637 , C23C18/1834 , C23C18/42 , C23C18/54
摘要： The present invention discloses compositions for increasing the adhesion of a layer of silver deposited from an immersion plating bath as well as methods of increasing the adhesion of silver layers obtained using these compositions. Such compositions and methods are particularly useful in the manufacture of electronic devices.
摘要翻译：本发明公开了用于增加浸渍镀浴中沉积的银层的粘附性的组合物，以及增加使用这些组合物获得的银层的粘附性的方法。这样的组合物和方法在电子设备的制造中特别有用。

4. 发明申请

US20020038764A1 Sequential electrodeposition of metals using modulated electric fields for manufacture of circuit boards having features of different sizes 失效
标题翻译：使用调制电场连续电沉积金属，以制造具有不同尺寸特征的电路板
公开(公告)号：US20020038764A1
公开(公告)日：2002-04-04
申请号：US09823750
申请日：2001-04-03
发明人： E. Jennings Taylor , Jenny J. Sun , Maria E. Inman
IPC分类号： C25D005/18 , C25D005/02 , C25D003/00 , C25D003/46 , C25D003/48 , C25D003/12 , C25D003/04 , C25D003/38 , C25D003/34 , C25D003/30 , C25D003/22 , B32B015/04 , B32B003/00 , B32B003/30 , B22F005/00 , C25D003/56 , C25D003/58
CPC分类号： H05K3/423 , C25D5/18 , H05K3/4644 , H05K2201/09563 , H05K2203/1476 , H05K2203/1492 , Y10S205/92 , Y10T428/12396 , Y10T428/31678
摘要： A continuous layer of a metal is electrodeposited onto a substrate having both hydrodynamically inaccessible recesses and hydrodynamically accessible recesses on its surface by a twostep process in which the hydrodynamically inaccessible recesses are plated using a pulsed reversing current with cathodic pulses having a duty cycle of less than about 50% and anodic pulses having a duty cycle of greater than about 50% and the hydrodynamically accessible recesses are then plated using a pulsed reversing current with cathodic pulses having a duty cycle of greater than about 50% and anodic pulses having a duty cycle of less than about 50%.
摘要翻译：连续的金属层通过两步法在其表面上电沉积到具有流体动力学不可接近的凹陷和流体动力学可访问的凹部的基底上，其中使用具有占空比小于等于的阴极脉冲的脉冲反转电流对流体动力学不可访问的凹陷进行电镀约50％的阳极脉冲和占空比大于约50％的阳极脉冲，然后使用具有大于约50％的占空比的阴极脉冲的脉冲反向电流来对流体动力学可访问的凹陷进行电镀，并且具有占空比为小于约50％。

5. 发明申请

US20030085132A1 Plating bath and method for depositing a metal layer on a substrate 有权
公开(公告)号：US20030085132A1
公开(公告)日：2003-05-08
申请号：US09970271
申请日：2001-10-02
申请人： Shipley Company, L.L.C.
发明人： Andrew J. Cobley , Mark J. Kapeckas , Erik Reddington , Wade Sonnenberg , Leon R. Barstad , Thomas Buckley
IPC分类号： C25C007/00 , C25B009/00 , C25D017/00 , C25D003/00 , C25D003/54 , C25D003/46 , C25D003/50 , C25D003/48
CPC分类号： C25D3/38 , C25D3/02 , H05K3/242
摘要： A metal plating bath and metal plating process that contains aldehyde compounds that prevent or reduce the consumption of metal plating bath additives. The metal plating baths provide for an efficient plating method because the plating process need not be interrupted to replenish the plating bath with additives. The Metal plating baths may be employed to plate metals such as copper, gold, silver, palladium, cobalt, chromium, cadmium, bismuth, indium, rhodium, iridium, and ruthenium.

6. 发明申请

US20020033341A1 Pulse reverse electrodeposition for metallization and planarization of semiconductor substrates 失效
标题翻译：用于半导体衬底的金属化和平坦化的脉冲反电沉积
公开(公告)号：US20020033341A1
公开(公告)日：2002-03-21
申请号：US09823751
申请日：2001-04-03
发明人： E. Jennings Taylor , Chengdong Zhou , Jenny J. Sun
IPC分类号： C25D005/18 , C25D005/02 , C25D003/56 , C25D003/58 , C25D003/48 , C25D003/00 , C25D003/46 , C25D003/12 , C25D003/04 , C25D003/38 , C25D003/22 , B32B003/00 , B32B003/30 , B22F005/00
CPC分类号： B23H5/08 , B23H2300/12 , C25D3/38 , C25D5/18 , H01L21/2885 , H01L21/76877 , H05K3/423 , Y10T428/12396
摘要： A smooth layer of a metal is electroplated onto a microrough electrically conducting substrate by immersing the substrate and a counterelectrode in an electroplating bath of the metal to be electroplated and passing a modulated reversing electric current between the electrodes. The current contains pulses that are cathodic with respect to said substrate and pulses that are anodic with respect to said substrate. The cathodic pulses have a duty cycle less than about 50% and said anodic pulses have a duty cycle greater than about 50%, the charge transfer ratio of the cathodic pulses to the anodic pulses is greater than one, and the frequency of said pulses ranges from about 10 Hertz to about 12000 Hertz. The plating bath is substantially devoid of levelers and may be devoid of brighteners.
摘要翻译：将金属的平滑层通过将基板和反电极浸入要电镀的金属的电镀槽中并在电极之间传递调制的反向电流而电镀到微导电基板上。电流包含相对于所述衬底阴极的脉冲和相对于所述衬底是阳极的脉冲。阴极脉冲具有小于约50％的占空比，并且所述阳极脉冲具有大于约50％的占空比，阴极脉冲对阳极脉冲的电荷传输比大于1，并且所述脉冲的频率范围从约10赫兹到约12000赫兹。电镀浴基本上没有调理剂，可能没有增白剂。

7. 发明申请

US20010050232A1 Methods of overplating surfaces of microelectromechanical structure 有权
标题翻译：微机电结构表面超镀的方法
公开(公告)号：US20010050232A1
公开(公告)日：2001-12-13
申请号：US09809538
申请日：2001-03-15
发明人： Edward Hill , Robert L. Wood , Ramaswamy Mahadevan
IPC分类号： C25D021/12 , C25D005/02 , C25D003/56 , C25D003/62 , C25D003/46 , C25D003/48 , C25D003/50
CPC分类号： H02N10/00 , B81B3/0024 , B81B3/0081 , H01H1/0036 , H01H2001/0042
摘要： MEMS structures are provided that compensate for ambient temperature changes, process variations, and the like, and can be employed in many applications. These structures include an active microactuator adapted for thermal actuation to move in response to the active alteration of its temperature. The active microactuator may be further adapted to move in response to ambient temperature changes. These structures also include a temperature compensation element, such as a temperature compensation microactuator or frame, adapted to move in response to ambient temperature changes. The active microactuator and the temperature compensation element move cooperatively in response to ambient temperature changes. Thus, a predefined spatial relationship is maintained between the active microactuator and the associated temperature compensation microactuator over a broad range of ambient temperatures absent active alteration of the temperature of the active microactuator. In an alternative embodiment wherein the active microactuator is suspended within a frame above the substrate, the MEMS structure holds at least a portion of the active microactuator in a fixed position relative to the substrate over a broad range of ambient temperatures absent active alteration of the temperature of the active microactuator. By actively altering the temperature of the active microactuator, the active microactuator can be controllably moved relative to the temperature compensation microactuator and/or the underlying substrate. Related methods of compensating for the effects of ambient temperature variations are provided. Further, an overplating technique is provided for precisely sizing a gap defined within a MEMS structure.
摘要翻译：提供了补偿环境温度变化，工艺变化等的MEMS结构，并且可以用于许多应用中。这些结构包括适于热致动以响应于其温度的主动改变而移动的主动微型致动器。活性微致动器可以进一步适于响应于环境温度变化而移动。这些结构还包括适于响应于环境温度变化而移动的温度补偿元件，例如温度补偿微致动器或框架。活动微型致动器和温度补偿元件响应于环境温度变化而协同运动。因此，在活动微型致动器的温度的有效改变的情况下，在宽的环境温度范围内，在有源微致动器和相关联的温度补偿微致动器之间保持预定的空间关系。在其中将活性微致动器悬挂在衬底上方的框架内的MEMS替代实施例中，MEMS结构将活性微致动器的至少一部分在宽的环境温度范围内保持在相对于衬底的固定位置，而没有主动改变温度的活性微致动器。通过主动地改变活性微致动器的温度，可以相对于温度补偿微致动器和/或底层衬底可控地移动活性微致动器。提供了补偿环境温度变化影响的相关方法。此外，提供了一种用于精确地确定在MEMS结构内限定的间隙的过平面技术。

8. 发明申请

US20010004048A1 Method for manufacturing a metallic composite strip 失效
标题翻译：金属复合带的制造方法
公开(公告)号：US20010004048A1
公开(公告)日：2001-06-21
申请号：US09774146
申请日：2001-01-30
发明人： Udo Adler , Klaus Schleicher
IPC分类号： C23C014/34 , C25D003/46 , C25C001/20
CPC分类号： C23C28/021 , C23C2/08 , C23C2/26 , C23C2/40 , C23C28/023 , C25D3/30 , C25D3/46
摘要： A method for manufacturing a metal composite strip for the production of electrical contact components. A film made of tin or a tin alloy is first applied onto an initial material made of an electrically conductive base material. A film of silver is then deposited thereonto. Copper or a copper alloy is preferably used as the base material. The tin film can be applied in the molten state, and the silver film by electroplating. Furthermore, both the tin film and the silver film can be deposited by electroplating. A further alternative provides for manufacturing the tin film in the molten state and the silver film by cathodic sputtering. The diffusion operations which occur in the coating result in a homogeneous film of a tin-silver alloy. This formation can be assisted by way of a heat treatment of the composite strip.
摘要翻译：一种用于制造用于生产电接触部件的金属复合带材的方法。首先将由锡或锡合金制成的膜施加到由导电基材制成的初始材料上。然后将银膜沉积在其上。优选使用铜或铜合金作为基材。锡膜可以以熔融状态施加，银膜通过电镀。此外，锡膜和银膜都可以通过电镀沉积。另一替代方案是通过阴极溅射制造熔融状态的锡膜和银膜。在涂层中发生的扩散操作产生锡 - 银合金的均匀薄膜。这种形成可以通过复合带的热处理来辅助。

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