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1. 发明授权

US06444482B1 Method of monitoring power supplied to heat a substrate 失效
标题翻译：监测供应以加热基板的功率的方法
公开(公告)号：US06444482B1
公开(公告)日：2002-09-03
申请号：US09525777
申请日：2000-03-15
申请人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
发明人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
IPC分类号： C23C1646
CPC分类号： H01L28/84 , C23C16/24 , C23C16/56 , H01L21/02532 , H01L21/02667 , H01L21/2022 , H01L21/3205 , H01L22/26 , Y10S148/003 , Y10S148/122 , Y10S438/964
摘要： Methods for monitoring power supplied to a substrate to form a doped or undoped crystalline semiconductor material are disclosed. The methods include providing a layer of an amorphous semiconductor material, doped or undoped, on a substrate and heating the substrate while monitoring the power applied to a heating element to heat the substrate so as to maintain a desired temperature. A decrease in the power supplied to the substrate is indicative of a conversion of the amorphous semiconductor material to a crystalline form thereof, at which time the power supplied to the heating element is terminated. By selecting the degree of crystallinity of the layer of doped or undoped amorphous semiconductor material on a substrate, the grain size of the resulting crystalline material can be controlled.
摘要翻译：公开了用于监测提供给衬底以形成掺杂或未掺杂的结晶半导体材料的功率的方法。所述方法包括在衬底上提供掺杂或未掺杂的非晶半导体材料层并加热衬底，同时监测施加到加热元件的功率以加热衬底以便保持所需温度。提供给基板的功率的降低表示非晶半导体材料转变为其结晶形式，此时提供给加热元件的功率终止。通过在衬底上选择掺杂或未掺杂的非晶半导体材料层的结晶度，可以控制所得结晶材料的晶粒尺寸。

2. 发明授权

US06302966B1 Temperature control system for plasma processing apparatus 有权
标题翻译：等离子体处理装置的温度控制系统
公开(公告)号：US06302966B1
公开(公告)日：2001-10-16
申请号：US09439675
申请日：1999-11-15
申请人： Andrew D. Bailey, III , Alan M. Schoepp , Michael G. R. Smith , Andras Kuthi
发明人： Andrew D. Bailey, III , Alan M. Schoepp , Michael G. R. Smith , Andras Kuthi
IPC分类号： C23C1646
CPC分类号： H01J37/32522
摘要： A plasma processing system that includes a temperature management system and method that can achieve very accurate temperature control over a plasma processing apparatus is disclosed. In one embodiment, the temperature management system and method operate to achieve tight temperature control over surfaces of the plasma processing apparatus which interact with the plasma during fabrication of semiconductor devices. The tight temperature control offered by the invention can be implemented with combination heating and cooling blocks such that both heating and cooling can be provided from the same thermal interface.
摘要翻译：公开了一种等离子体处理系统，其包括能够对等离子体处理装置实现非常精确的温度控制的温度管理系统和方法。在一个实施例中，温度管理系统和方法用于在半导体器件的制造期间实现与等离子体相互作用的等离子体处理装置的表面的紧密温度控制。本发明提供的严格的温度控制可以通过组合加热和冷却块实现，使得可以从相同的热界面提供加热和冷却。

3. 发明授权

US06692575B1 Apparatus for supporting a substrate in a reaction chamber 失效
标题翻译：用于在反应室中支撑基底的装置
公开(公告)号：US06692575B1
公开(公告)日：2004-02-17
申请号：US09484821
申请日：2000-01-18
申请人： Thomas R. Omstead , Panya Wongsenakhum , William J. Messner , Edward J. Nagy , William Starks , Mehrdad M. Moslehi
发明人： Thomas R. Omstead , Panya Wongsenakhum , William J. Messner , Edward J. Nagy , William Starks , Mehrdad M. Moslehi
IPC分类号： C23C1646
CPC分类号： C23C16/45565 , C23C16/4408 , C23C16/4412 , C23C16/45521 , C23C16/45589 , C23C16/4585 , Y10S438/905
摘要： A method and system for fabricating a device on a substrate with a process gas, such as with chemical vapor deposition. A reaction chamber and support chuck cooperate to form a low conductance configuration for axisymetric process gas flow over the substrate and to form a high conductance configuration for enhanced evacuation of residual process gas from the reaction chamber upon completion of the process. A dual conductance chuck has an indented region that aligns with the exhaust port of the reaction chamber to restrict process gas flow in the low conductance configuration, and that moves distal a showerhead and the exhaust port to provide reduced restriction of process gas flow for reaction chamber evacuation. The chuck includes thermal control for enhancing film deposition on the substrate and for reducing residual film deposition on the chuck. An evacuation opening in the housing provides independent evacuation of residual gas from the housing. The present invention enhance throughput of device formation by reducing purge and process cycle times.
摘要翻译：一种用工艺气体（例如化学气相沉积）在衬底上制造器件的方法和系统。反应室和支撑卡盘配合以形成用于轴向测量工艺气体流过衬底的低电导结构，并且形成高电导配置，以在工艺完成时增强从反应室抽出残余工艺气体。双电导卡盘具有与反应室的排气口对准的缩进区域，以限制低导电构造中的工艺气体流动，并且在喷头和排气口的远端移动以减少对反应室的工艺气体流量的限制疏散。卡盘包括用于增强基板上的膜沉积并减少卡盘上的残留膜沉积的热控制。壳体中的排气开口可以从壳体中独立排出残留气体。本发明通过减少吹扫和处理循环时间来增强器件形成的生产能力。

4. 发明授权

US06177127B1 Method of monitoring emissivity 失效
标题翻译：监测发射率的方法
公开(公告)号：US06177127B1
公开(公告)日：2001-01-23
申请号：US09191236
申请日：1998-11-13
申请人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
发明人： Ronald A. Weimer , Avishai Kepten , Michael Sendler
IPC分类号： C23C1646
CPC分类号： H01L28/84 , C23C16/24 , C23C16/56 , H01L21/02532 , H01L21/02667 , H01L21/2022 , H01L21/3205 , H01L22/26 , Y10S148/003 , Y10S148/122 , Y10S438/964
摘要： A method for reliably forming polysilicon of a desired surface roughness includes providing a layer of doped or undoped amorphous silicon on a substrate and heating said substrate while monitoring the emission of said substrate and comparing the monitored emission with an expected emission attributable to the heating regime employed. An increase in the monitored emission not attributable to the heating regime signals a transition of the layer of amorphous silicon to rough polysilicon. A decrease in the monitored emission not attributable to the heating regime signals a transition to smooth polysilicon. The increases and decreases in the monitored emission can be used to end the heating regime at the time at which the desired surface roughness of polysilicon is formed, or merely to passively monitor the process. The power supplied to heat the substrate to a desired temperature can also be monitored, in that a drop in required power is indicative of the formation of polysilicon. By selecting the degree of crystallinity of the layer of doped or undoped amorphous silicon on a substrate, the grain size of the resulting HSG polysilicon can be controlled.
摘要翻译：可靠地形成期望表面粗糙度的多晶硅的方法包括在衬底上提供掺杂或未掺杂的非晶硅层并加热所述衬底，同时监测所述衬底的发射并将所监测的发射与可归因于所采用的加热方式的预期发射。不能归因于加热方式的监测发射的增加表明非晶硅层向粗多晶硅的转变。不受加热制度影响的监测排放的减少表明向多晶硅平滑过渡。监测发射的增加和减少可以用于在形成期望的多晶硅表面粗糙度的时候终止加热状态，或者仅仅被动地监视该过程。为了将衬底加热到所需温度，提供的功率也可以被监测，因为所需功率的下降指示多晶硅的形成。通过选择衬底上掺杂或未掺杂的非晶硅层的结晶度，可以控制得到的HSG多晶硅的晶粒尺寸。

5. 发明授权

US06589608B2 Process for the vacuum coating of metal components 失效
标题翻译：金属部件真空镀膜工艺
公开(公告)号：US06589608B2
公开(公告)日：2003-07-08
申请号：US09821856
申请日：2001-03-30
申请人： Carsten Deus , Joachim Senf , Lutz Wolkers
发明人： Carsten Deus , Joachim Senf , Lutz Wolkers
IPC分类号： C23C1646
CPC分类号： C23C28/3215 , C23C8/02 , C23C8/10 , C23C28/321 , C23C28/345
摘要： A process for producing a homogeneous oxide layer on metal components includes uniformly heating the components, in all their regions, in a vacuum chamber and, after a predetermined temperature has been reached, exposing the components to an oxygen-containing gas for a predetermined period and at a predetermined pressure. The metal components are coated with MCrAlY or PtAl. The preheating temperature is between 750 and 850° C., preferably, approximately 800° C. Preferably, the thickness of the homogeneous oxide layer is between 0.01 and 5 &mgr;m. The heating is preferably by electron radiation. The predetermined period is approximately 10 minutes, and the predetermined pressure is between 1×10−3 and 8×10−2 mbar.
摘要翻译：用于在金属部件上制造均匀氧化物层的方法包括在真空室中在其所有区域中均匀加热组分，并且在达到预定温度之后，将组分暴露于含氧气体一段预定时间，在预定压力下。金属组分涂覆有MCrAlY或PtAl。预热温度为750-850℃，优选为约800℃。优选地，均匀氧化物层的厚度为0.01至5μm。加热优选通过电子辐射。预定时间约为10分钟，预定压力为1×10 -3至8×10 -2毫巴。

6. 发明授权

US06485603B1 Method and apparatus for conserving energy within a process chamber 有权
标题翻译：用于在处理室内节约能量的方法和装置
公开(公告)号：US06485603B1
公开(公告)日：2002-11-26
申请号：US09346073
申请日：1999-07-01
申请人： Nelson Yee , Matthew Tsai
发明人： Nelson Yee , Matthew Tsai
IPC分类号： C23C1646
CPC分类号： H01L21/67115 , H01L21/67103
摘要： An apparatus for redirecting energy applied to a susceptor of a substrate process chamber. Specifically, a shield comprising one or more reflector members is disposed below said susceptor whereby thermal energy radiated from a backside of said susceptor is reflected back to the susceptor. The apparatus comprises a bracket member attached to the reflector members and a pedestal assembly disposed below said susceptor. The reflector members are fabricated from a low emissivity material such as stainless steel (which can be polished to a highly reflective condition). Also, the first and second reflector members can be annealed.
摘要翻译：一种用于重定向施加到衬底处理室的基座的能量的装置。具体地，包括一个或多个反射器构件的屏蔽件设置在所述基座的下方，由此从所述基座的背面辐射的热能被反射回到所述基座。该装置包括附接到反射器构件的支架构件和设置在所述基座下方的基座组件。反射器构件由诸如不锈钢的低发射率材料制成（其可以被抛光到高反射性条件）。此外，第一和第二反射器构件可以退火。

7. 发明授权

US06413579B1 Temperature control of CVD method for reduced haze 失效
标题翻译：降低雾度的CVD法的温度控制
公开(公告)号：US06413579B1
公开(公告)日：2002-07-02
申请号：US09492593
申请日：2000-01-27
申请人： Douglas Nelson , Steven Phillips
发明人： Douglas Nelson , Steven Phillips
IPC分类号： C23C1646
CPC分类号： C03C17/3417
摘要： The invention is a method of making a coated glass substrate having a low haze. A soda-lime glass substrate having at least one surface upon which a coating may be deposited is provided. The glass substrate is heated and maintained at a temperature sufficient to volatilize salts that may be formed during the depositing of a first coating on the glass substrate. A first gaseous precursor mixture including a halogen containing precursor, a metal precursor, an oxidizing agent, and an inert to carrier gas is directed toward and along the surface to be coated and reacting the mixture at or near the surface of the glass substrate to form a first coating containing a metal oxide coating. The glass substrate is cooled to a temperature to reduce crystalline growth in a second coating to be applied over the first coating. A second gaseous precursor mixture including a second metal precursor, an oxidizing agent, and an inert carrier gas is directed toward and along the coated surface of the glass substrate and reacting the mixture at or near the coated surface to form a metal containing coating. The glass substrate is cooled to an ambient temperature. The invention also includes a coated glass substrate produced in accordance with the aforementioned method.
摘要翻译：本发明是制造具有低雾度的涂覆玻璃基板的方法。提供了具有可以沉积涂层的至少一个表面的钠钙玻璃基板。将玻璃基底加热并保持在足以挥发在玻璃基底上沉积第一涂层期间可能形成的盐的温度。包含含卤素的前体，金属前体，氧化剂和对载气惰性的第一气态前体混合物被引向并沿着待涂覆的表面，并使混合物在玻璃基底的表面处或附近反应形成含有金属氧化物涂层的第一涂层。将玻璃基底冷却至温度以减少第二涂层上的结晶生长以施加在第一涂层上。包括第二金属前体，氧化剂和惰性载气的第二气态前体混合物被引向并沿着玻璃基底的涂覆表面，并使混合物在涂覆表面处或附近反应以形成含金属的涂层。将玻璃基板冷却至环境温度。本发明还包括根据上述方法生产的涂覆玻璃基板。

8. 发明授权

US06179924B2 Heater for use in substrate processing apparatus to deposit tungsten 失效
标题翻译：用于衬底处理装置的加热器以沉积钨
公开(公告)号：US06179924B2
公开(公告)日：2001-01-30
申请号：US09067618
申请日：1998-04-28
申请人： Jun Zhao , Talex Sajoto , Leonid Selyutin
发明人： Jun Zhao , Talex Sajoto , Leonid Selyutin
IPC分类号： C23C1646
CPC分类号： C23C16/45521 , C23C16/14 , C23C16/4586 , C23C16/46 , C23C16/52 , H01L21/67109
摘要： The present invention provides a simplified heater design that is scaleable for equipment processing different diameter substrates and that can efficiently and economically process substrates to meet stringent film requirements such as film uniformity for fabricating high integration devices. The present invention is particularly useful for economically and efficiently producing integrated devices using increasingly larger diameter substrates, such as 12-inch (or 300-mm) diameter and even larger substrates. According to one embodiment, the present invention provides a heater assembly for use in a substrate processing apparatus. The heater assembly includes a metal pedestal including a surface for supporting a substrate, and a resistive heating element disposed in the metal pedestal. The heater assembly also includes a purge gas channel system disposed in the metal pedestal. The purge gas channel system includes a central purge gas inlet located substantially at a center of the metal pedestal. The central purge gas inlet is for providing a purge gas. The purge gas channel system also includes multiple radial purge gas channels radiating from the central purge gas inlet out toward a perimeter of the metal pedestal, and an annular purge gas channel formed in the metal pedestal at the perimeter. The purge gas channels form a substantially symmetric pattern, and each of the purge gas channels are substantially the same length. In a specific embodiment, the assembly includes an annular purge gas channel coupled to the surface via multiple holes near the perimeter to provide a purge guide ring integral to the metal pedestal. Other embodiments of the present invention are also provided.
摘要翻译：本发明提供了一种简化的加热器设计，其可用于设备处理不同直径的基底并且可以有效地和经济地处理基底以满足严格的膜要求，例如用于制造高集成器件的膜均匀性。本发明对于经济地和有效地生产使用越来越大直径的基底（例如12英寸（或300mm）直径和甚至更大的基底）的集成装置特别有用。根据一个实施例，本发明提供一种用于基板处理装置的加热器组件。加热器组件包括金属基座，其包括用于支撑基板的表面和设置在金属基座中的电阻加热元件。加热器组件还包括设置在金属基座中的吹扫气体通道系统。吹扫气体通道系统包括基本上位于金属基座的中心处的中央吹扫气体入口。中央吹扫气体入口用于提供净化气体。吹扫气体通道系统还包括从中央吹扫气体入口向金属基座的周边辐射的多个径向吹扫气体通道，以及形成在金属基座周边的环形吹扫气体通道。吹扫气体通道形成基本上对称的图案，并且每个吹扫气体通道基本上是相同的长度。在具体实施例中，组件包括通过靠近周边的多个孔耦合到表面的环形吹扫气体通道，以提供与金属基座一体的清洗引导环。还提供了本发明的其它实施例。

9. 发明授权

US06171641B2 Vacuum processing apparatus, and a film deposition apparatus and a film deposition method both using the vacuum processing apparatus 失效
标题翻译：真空处理装置，以及使用真空处理装置的成膜装置和成膜方法
公开(公告)号：US06171641B2
公开(公告)日：2001-01-09
申请号：US08260321
申请日：1994-06-15
申请人： Akira Okamoto , Shigeru Kobayashi , Hideaki Shimamura , Susumu Tsuzuku , Eisuke Nishitani , Satosi Kisimoto , Yuji Yoneoka
发明人： Akira Okamoto , Shigeru Kobayashi , Hideaki Shimamura , Susumu Tsuzuku , Eisuke Nishitani , Satosi Kisimoto , Yuji Yoneoka
IPC分类号： C23C1646
CPC分类号： C23C16/463 , H01L21/67109 , H01L21/67248
摘要： A vacuum processing apparatus for performing various processes on a wafer in a vacuum chamber, and a film deposition method and a film deposition apparatus using this vacuum processing apparatus. The vacuum processing apparatus, the film deposition method and the film deposition apparatus using the vacuum processing apparatus according to this invention are characterized in that temperature control of the wafer is performed in a film deposition process, and particularly characterized in that after the emissivity calibration using a combination of a temperature calibration stage and a shutter is performed, the substrate is transferred to stages in a vacuum film deposition process chamber, and a film is deposited on the substrate by controlling the substrate temperature to a specified temperature.
摘要翻译：一种用于在真空室中的晶片上进行各种处理的真空处理设备，以及使用该真空处理设备的成膜方法和成膜设备。使用本发明的真空处理装置的真空处理装置，成膜方法和成膜装置的特征在于，在薄膜沉积工艺中进行晶片的温度控制，其特征在于，在使用执行温度校准阶段和快门的组合，将衬底转移到真空膜沉积处理室中的阶段，并且通过将衬底温度控制到指定温度将膜沉积在衬底上。

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