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    • 1. 发明申请
    • Polymerization with living characteristics
    • 具有生活特性的聚合
    • US20040171777A1
    • 2004-09-02
    • US10784425
    • 2004-02-23
    • Tam Phuong LeGraeme MoadEzio RizzardoSan Hoa Thang
    • C08F012/30
    • C08K5/38C07C327/36C07C329/00C07F9/4065C08F2/38C08F12/08C08F293/00C08F293/005C08L25/06
    • This invention concerns a free radical polymerization process, selected chain transfer agents employed in the process and polymers made thereby, in which the process comprises preparing polymer of general Formula (A) and Formula (B) comprising contacting: (i) a monomer selected from the group consisting of vinyl monomers (of structure CH2nullCUV), maleic anhydride, N-alkylmaleimide, N-arylmaleimide, dialkyl fumarate and cyclopolymerizable monomers; (ii) a thiocarbonylthio compound selected from Formula (C) and Formula (D) having a chain transfer constant greater than about 0.1; and (iii) free radicals produced from a free radical source; the polymer of Formula (A) being made by contacting (i), (ii) C and (iii) and that of Formula (B) by contacting (i), (ii) D, and (iii); and (iv) controlling the polydispersity of the polymer being formed by varying the ratio of the number of molecules of (ii) to the number of molecules of (iii); wherein Q, R, U, V, Z, Znull, m, p and q are as defined in the text. 1
    • 本发明涉及自由基聚合方法,该方法中使用的选择的链转移剂和由此制备的聚合物,其中该方法包括制备通式(A)和式(B)的聚合物,其包括:(i)选自 由乙烯基单体(结构CH 2 = CUV),马来酸酐,N-烷基马来酰亚胺,N-芳基马来酰亚胺,富马酸二烷基酯和可环化聚合的单体组成的组; (ii)选自式(C)和式(D)的硫代羰基硫代化合物,其链转移常数大于约0.1; 和(iii)自由基产生的自由基; 式(A)的聚合物通过使(i),(ii)D和(iii)接触而使(i),(ii)C和(iii)与式(B) 和(iv)通过改变(ii)的分子数与(iii)的分子数之比来控制形成的聚合物的多分散性; 其中Q,R,U,V,Z,Z',m,p和q如文中所定义。
    • 10. 发明申请
    • Organic anti-reflective polymer and preparation thereof
    • 有机抗反射聚合物及其制备方法
    • US20030208018A1
    • 2003-11-06
    • US10438531
    • 2003-05-14
    • Hyundai Electronics Industries Co., Ltd.
    • Sung-eun HongMin-ho JungKi-ho Baik
    • C08F012/30
    • C08F20/58C07C303/28C07C309/73
    • The present invention relates to organic anti-reflective coating polymers suitable for use in a semiconductor device during a photolithograhy process for forming ultrafine patterns using 193 nm ArF beam radiation, and preparation method therefor. Anti-reflective coating polymers of the present invention contain a monomer having a pendant phenyl group having high absorbency at the 193 nm wavelength. When the polymers of the present invention are used in an anti-reflective coating in a photolithography process for forming ultrafine patterns, the polymers eliminate the standing waves caused by changes in the thickness of the overlying photosensitive film, by the spectroscopic property of lower layers on wafer and by changes in CD due to diffractive and reflective light originating from the lower layers. Use of the anti-reflective coating of the present invention results in the stable formation of ultrafine patters suitable for 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices and a great improvement in the production yield. The present invention also relates to anti-reflective coating compositions containing these polymers and to the anti-reflective coatings formed from these compositions, as well as preparation methods therefor.
    • 本发明涉及一种适用于半光装置的有机抗反射涂层聚合物,其用于使用193nm ArF光束辐射形成超细纹图案的光刻方法及其制备方法。 本发明的抗反射涂层聚合物含有在193nm波长处具有高吸收性的侧基苯基的单体。 当本发明的聚合物在用于形成超细图案的光刻工艺中的抗反射涂层中使用时,聚合物消除由上覆感光膜的厚度变化引起的驻波,通过下层的分光特性 晶片以及由于来自下层的衍射和反射光引起的CD变化。 使用本发明的抗反射涂层可以稳定地形成适用于64M,256M,1G,4G和16G DRAM半导体器件的超微图案,并且可以大大提高生产率。 本发明还涉及含有这些聚合物和由这些组合物形成的抗反射涂层的抗反射涂料组合物及其制备方法。