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1. 发明申请

US20030208018A1 Organic anti-reflective polymer and preparation thereof 失效
标题翻译：有机抗反射聚合物及其制备方法
公开(公告)号：US20030208018A1
公开(公告)日：2003-11-06
申请号：US10438531
申请日：2003-05-14
申请人： Hyundai Electronics Industries Co., Ltd.
发明人： Sung-eun Hong , Min-ho Jung , Ki-ho Baik
IPC分类号： C08F012/30
CPC分类号： C08F20/58 , C07C303/28 , C07C309/73
摘要： The present invention relates to organic anti-reflective coating polymers suitable for use in a semiconductor device during a photolithograhy process for forming ultrafine patterns using 193 nm ArF beam radiation, and preparation method therefor. Anti-reflective coating polymers of the present invention contain a monomer having a pendant phenyl group having high absorbency at the 193 nm wavelength. When the polymers of the present invention are used in an anti-reflective coating in a photolithography process for forming ultrafine patterns, the polymers eliminate the standing waves caused by changes in the thickness of the overlying photosensitive film, by the spectroscopic property of lower layers on wafer and by changes in CD due to diffractive and reflective light originating from the lower layers. Use of the anti-reflective coating of the present invention results in the stable formation of ultrafine patters suitable for 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices and a great improvement in the production yield. The present invention also relates to anti-reflective coating compositions containing these polymers and to the anti-reflective coatings formed from these compositions, as well as preparation methods therefor.
摘要翻译：本发明涉及一种适用于半光装置的有机抗反射涂层聚合物，其用于使用193nm ArF光束辐射形成超细纹图案的光刻方法及其制备方法。本发明的抗反射涂层聚合物含有在193nm波长处具有高吸收性的侧基苯基的单体。当本发明的聚合物在用于形成超细图案的光刻工艺中的抗反射涂层中使用时，聚合物消除由上覆感光膜的厚度变化引起的驻波，通过下层的分光特性晶片以及由于来自下层的衍射和反射光引起的CD变化。使用本发明的抗反射涂层可以稳定地形成适用于64M，256M，1G，4G和16G DRAM半导体器件的超微图案，并且可以大大提高生产率。本发明还涉及含有这些聚合物和由这些组合物形成的抗反射涂层的抗反射涂料组合物及其制备方法。

2. 发明申请

US20030100695A1 Organic polymer for organic anti-reflective coating layer and preparation thereof 失效
标题翻译：有机抗反射涂层用有机聚合物及其制备方法
公开(公告)号：US20030100695A1
公开(公告)日：2003-05-29
申请号：US10313480
申请日：2002-12-04
申请人： Hyundai Electronics Industries Co., Ltd.
发明人： Jae-chang Jung , Keun-kyu Kong , Min-ho Jung , Sung-eun Hong , Ki-ho Baik
IPC分类号： C08F118/00
CPC分类号： C08F220/28 , C08F212/08 , G03F7/091
摘要： Disclosed is an organic anti-reflective film composition suitable for use in submicrolithography, comprising a compound of Formula 13 and a compound of Formula 14 . The organic anti-reflective film effectively absorbs the light penetrating through the photoresist film coated on top of the anti-reflective film, thereby greatly reducing the standing wave effect. Use of organic anti-reflective films of the present invention allows patterns to be formed in a well-defined, ultrafine configuration, providing a great contribution to the high integration of semiconductor devices. 1 wherein b, c, Rnull, Rnull, R1, R2, R3, and R4 are those defined herein.
摘要翻译：公开了适用于亚微光刻的有机抗反射膜组合物，其包含式13化合物和式14化合物。有机抗反射膜有效地吸收穿过抗反射膜顶部的光致抗蚀剂膜的光，从而大大降低了驻波效应。使用本发明的有机抗反射膜允许以良好限定的超细结构形成图案，为半导体器件的高集成度提供了巨大的贡献。其中b，c，R'，R“，R 1，R 2，R 3和R 4是本文所定义的那些。

3. 发明申请

US20020137826A1 Organic anti-reflective polymer and method for manufacturing thereof 有权
标题翻译：有机抗反射聚合物及其制造方法
公开(公告)号：US20020137826A1
公开(公告)日：2002-09-26
申请号：US10095852
申请日：2002-03-11
申请人： Hyundai Electronics Industries Co., Ltd.
发明人： Min-ho Jung , Sung-eun Hong , Ki-ho Baik
IPC分类号： C08K005/09
CPC分类号： C08F220/34 , C07C251/66 , C08F2220/281 , C08F2220/325 , C08F220/14
摘要： Polymers are disclosed having the following formula 1 or 2: 1 Polymers of the present invention can be used as an ARC material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain a chromophore substituent that exhibits sufficient absorbance at the wavelengths useful for the submicrolithography process. The ARC prevents back reflection of light from lower layers and the alteration of the CD by diffracted and reflected light from the lower layers. The ARC also eliminates standing waves and reflective notching due to the optical properties of lower layers on the wafer and to changes in the thickness of the photosensitive film applied thereon, thereby resulting in the stable formation of ultrafine patterns suitable for 64M, 256M, 1G, 4G and 16G DRAMs and a great improvement in the production yield.
摘要翻译：公开了具有下式1或2的聚合物：本发明的聚合物可以用作ARC光学材料，用于使用248nm KrF，193nm ArF和157nm F2激光的亚微光刻工艺。聚合物含有在用于亚微光刻工艺的波长处表现出足够吸光度的发色团取代基。 ARC防止来自下层的光的背反射和来自下层的衍射和反射光的CD的改变。由于晶片上的较低层的光学特性和施加在其上的感光膜的厚度的变化，ARC还消除了驻波和反射凹陷，从而稳定地形成适合于64M，256M，1G， 4G和16G DRAM，并且生产产量大大提高。

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