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    • 3. 发明授权
    • Process for producing halogenated benzene compound
    • 卤代苯化合物的制备方法
    • US06307045B1
    • 2001-10-23
    • US09608217
    • 2000-06-30
    • Hiroshi KomoriKazuhiko Nishioka
    • Hiroshi KomoriKazuhiko Nishioka
    • C07B3900
    • C07D243/24C07B39/00C07B59/001C07B59/002C07C201/12C07C201/16C07C205/12
    • The present invention provides a process for producing halogenated benzene compounds. In the process, an organometallic compound represented by the general formula [I]: wherein M represents an R13Sn group, an R13Si group, an R13Ge group, an (R2CO2)Hg group, a ClHg group or an (R3O)2B group wherein each R1 independently represents a C1-C8 alkyl group, R2 represents a C1-C3 alkyl group or a C1-C3 haloalkyl group, R3 represents a hydrogen atom or a C1-C3 alkyl group, n represents an integer of from 0 to 4, m represents an integer of from 0 to 1, each A independently represents a fluorine atom, a nitro group, a cyano group, a C1-C8 alkyl group, a C1-C8 alkoxy group or a C2-C8 acyloxy group, and Q represents an organic residue, is reacted in a solvent with a halide ion represented by the general formula X−, under light irradiation conditions in the presence of a semiconductor catalyst with a photocatalytic activity.
    • 本发明提供了制备卤化苯化合物的方法。 在该方法中,由通式[I]表示的有机金属化合物:其中M表示R 13 Sn基团,R 13 Si基团,R 13 Ge基团,(R 2 CO 2)Hg基团,Cl Hg基团或(R 3 O) R1独立地表示C1-C8烷基,R2表示C1-C3烷基或C1-C3卤代烷基,R3表示氢原子或C1-C3烷基,n表示0〜4的整数,m 表示0〜1的整数,A各自独立地表示氟原子,硝基,氰基,C 1〜C 8烷基,C 1〜C 8烷氧基或C 2〜C 8酰氧基,Q表示 有机残余物在溶剂中与通式X-表示的卤离子在光照射条件下在具有光催化活性的半导体催化剂的存在下反应。