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1. 发明授权

US3941723A Crystallized alkali metal silicate with sequestering agents 失效
标题翻译：结晶的碱金属硅酸盐与螯合剂
公开(公告)号：US3941723A
公开(公告)日：1976-03-02
申请号：US143626
申请日：1971-05-14
申请人： Helmut H. Weldes
发明人： Helmut H. Weldes
IPC分类号： C01B33/32 , C11D3/08 , B01J17/06 , B01J17/20 , C11D7/14 , C11D7/32
CPC分类号： C01B33/325 , C11D3/08
摘要： Composite crystals of alkali metal silicate, particularly hydrated sodium metasilicates such as sodium metasilicate pentahydrate with sequestering agents, are formed by co-crystallization of liquors that contain both alkali metal silicate and sequestering agents.
摘要翻译：通过使含有碱金属硅酸盐和螯合剂的液体的共结晶，形成碱金属硅酸盐，特别是水合的偏硅酸钠如偏硅酸钠五水合物的复合晶体，具有螯合剂。

2. 发明授权

US3796548A Boat structure in an apparatus for making semiconductor compound single crystals 失效
标题翻译：制造半导体化合物单晶的装置中的船体结构
公开(公告)号：US3796548A
公开(公告)日：1974-03-12
申请号：US3796548D
申请日：1971-09-13
申请人： IBM
发明人： BOSS D , HULL E , SCILLA S
IPC分类号： C30B11/00 , C30B11/06 , C30B11/14 , C30B29/40 , H01L21/208 , B01J17/06
CPC分类号： C30B11/14 , C30B11/003 , Y10S117/90 , Y10T117/1092
摘要： An apparatus useful for growing single crystal semiconductor material comprising a liquid melt section coaxially integrated with a seed cavity and having an annularly disposed integral thermal reflector means and a radiant heat dissipating member horizontally disposed and in a post linear direction from the seed cavity.
摘要翻译：一种用于生长单晶半导体材料的装置，包括与种子腔同轴一体化的液体熔融部分，并且具有环形布置的整体式热反射器装置和从种子腔水平放置并沿着直线方向的辐射散热构件。

3. 发明授权

US4077832A Epitaxial growth of bismuth rare earth iron garnet from a flux of bismuth oxide and alkali metal oxide 失效
标题翻译：铋稀土铁石榴石从氧化铋和碱金属氧化物的外延生长
公开(公告)号：US4077832A
公开(公告)日：1978-03-07
申请号：US729901
申请日：1976-10-06
申请人： John M. Robertson , John C. Brice , John E. Davies
发明人： John M. Robertson , John C. Brice , John E. Davies
IPC分类号： C01G49/00 , C30B9/00 , C30B19/02 , C30B19/06 , C30B29/28 , G02F1/09 , H01F41/28 , B01J17/04 , B01J17/06 , C01G29/00
CPC分类号： C30B19/062 , C30B19/02 , C30B29/28 , C30B9/00
摘要： A method of growing a monocrystalline bismuth rare earth iron garnet material from a melt in which a flux containing bismuth oxide and an alkali metal oxide is employed.
摘要翻译：从使用含有氧化铋和碱金属氧化物的助熔剂的熔体中生长单晶铋稀土铁石榴石材料的方法。

4. 发明授权

US3917506A Method of growing quartz crystals and seed plate therefor 失效
标题翻译：生长石英晶体和种子板的方法
公开(公告)号：US3917506A
公开(公告)日：1975-11-04
申请号：US37828273
申请日：1973-07-11
申请人： MOTOROLA INC
发明人： LIND THEODORE E , BURTON RICHARD J
IPC分类号： C30B7/00 , B01J17/06
CPC分类号： C30B7/00 , C30B29/18 , Y10S117/902
摘要： There is disclosed a method of growing monocrystalline quartz by use of a Z-plate seed. The Z-plate seed has facet inhibiting projections on certain edges to attenuate formation of major rhombohedral facets which limit the amount of useful material produced. The seed plate is of a generally rectangular shape having its length to width ratio of 10:1 or less.
摘要翻译：公开了通过使用Z板种子生长单晶石英的方法。 Z板种子在某些边缘具有小面抑制投影，以减弱主要菱形面的形成，这限制了所生产的有用材料的量。种子板具有其长宽比为10:1或更小的大致矩形形状。

5. 发明授权

US3424562A Separating alkali metal halates from halides by addition of a water-soluble alcohol 失效
标题翻译：通过添加水溶性醇来分离碱金属卤化物
公开(公告)号：US3424562A
公开(公告)日：1969-01-28
申请号：US3424562D
申请日：1966-04-08
申请人： DOW CHEMICAL CO
发明人： GASKA REMIGIUS A , GOODENOUGH ROBERT D
IPC分类号： C01B7/09 , C01B7/13 , C01B11/14 , C01B11/20 , C01B11/22 , B01D9/02 , B01J17/06 , C01B7/00
CPC分类号： C01B11/22 , C01B7/09 , C01B7/13 , C01B11/145 , C01B11/20

6. 发明授权

US4222814A Method for forming a crystalline film for a paramagnetic sodium thallium type intermetallic compound 失效
标题翻译：形成顺磁性钠铊型金属间化合物的结晶膜的方法
公开(公告)号：US4222814A
公开(公告)日：1980-09-16
申请号：US872625
申请日：1978-01-26
申请人： Norman E. Reitz
发明人： Norman E. Reitz
IPC分类号： C01G15/00 , C22C1/00 , C22F3/02 , C23C14/16 , C23C14/56 , C23C14/58 , C23C16/24 , C23C26/00 , C30B23/02 , C30B25/18 , H01F41/14 , H01L31/18 , B01J17/06 , B01J17/30
CPC分类号： C23C14/56 , C22F3/02 , C23C14/165 , C23C14/58 , C23C14/5806 , C23C14/5893 , C23C16/24 , C23C26/00 , C30B23/02 , C30B25/18 , H01L31/18 , H01L31/1804 , H01L31/1876 , Y02E10/547 , Y02P70/521
摘要： A crystalline dual diamond sodium thallium type intermetallic compound is formed on a substrate surface from lithium and either aluminum, zinc or cadmium. The compound is grown within a magnetic field and, as a result, the compound is formed with a major crystallographic plane thereof aligned generally parallel to the field. Apparatus is disclosed for accomplishing formation of the compound. Silicon may later be grown on the surface of the compound.
摘要翻译：在锂和铝，锌或镉的基板表面上形成结晶双金刚石钠铊型金属间化合物。化合物在磁场内生长，结果，化合物形成有大致平行于场的主要结晶平面。公开了用于实现化合物形成的装置。随后可以在化合物的表面上生长硅。

7. 发明授权

US3857679A Crystal grower 失效
标题翻译：水晶花岗岩
公开(公告)号：US3857679A
公开(公告)日：1974-12-31
申请号：US32974673
申请日：1973-02-05
申请人： UNIV SOUTHERN CALIFORNIA
发明人： ALLRED W
IPC分类号： C30B15/14 , C30B15/30 , F16J15/40 , B01J17/06 , B01J17/18
CPC分类号： F16J15/403 , C30B15/14 , C30B15/30 , Y10S117/90 , Y10T117/1016 , Y10T117/106 , Y10T117/1064
摘要： A crystal grower furnace assembly having a gastight housing, a crystal pulling rod extending into the housing coaxially with the vertical axis of the housing and the heating elements. The housing is divided into a first chamber adapted for growing a crystal by the Czochralski technique, from a melt of the crystalline material, a second chamber above the first chamber having a port for evacuation and admission of gases, and a narrow neck connecting the chambers in coaxial alignment. The rod extends through the neck and is adapted for rotational and vertical movement therein. One heater element, situated near the juncture of the neck portion and the second chamber, is employed to heat boron oxide to a liquid which is used to seal the space between the rod and the inner wall of the neck portion to seal off the first chamber from the second chamber during the crystal growth operation. The second heater is situated near the top of the first chamber and is employed to prevent the condensation of arsenic during crystal growth.
摘要翻译：一种具有密封壳体的晶体生长炉组件，与壳体的垂直轴线和加热元件同轴延伸到壳体中的晶体拉杆。壳体被分为适于通过切克劳斯基技术从晶体材料的熔体生长晶体的第一室，在第一室上方的第二室具有用于抽空和进入气体的端口，以及连接室的窄颈部同轴对齐。杆延伸穿过颈部并适于在其中旋转和垂直移动。使用位于颈部和第二腔的接合部附近的一个加热器元件将氧化硼加热到液体，该液体用于密封杆与颈部内壁之间的空间，以密封第一腔室在晶体生长操作期间从第二腔室。第二加热器位于第一室的顶部附近，并且用于防止在晶体生长期间砷的冷凝。

8. 发明授权

US3695941A Preparation of eutectic material 失效
标题翻译：保护材料的制备
公开(公告)号：US3695941A
公开(公告)日：1972-10-03
申请号：US3695941D
申请日：1970-05-04
申请人： GEOFFREY WILLIAM GREEN , DONALD THOMAS JAMES HURLE
发明人： GREEN GEOFFREY WILLIAM , HURLE DONALD THOMAS JAMES
IPC分类号： C30B21/02 , C30B21/04 , C30B21/06 , B01J17/06
CPC分类号： C30B21/06 , C30B21/02 , C30B21/04
摘要： A METHOD OF PREPARING SOLID EUTECTIC MATERIAL BY CONTROLLED SOLIDIFICATION FROM THE MELT INCLUDES THE APPLICATION OF A STEADY DIRECTIONAL MAGNETIC FIELD TO THE LIQUIDSOLID INTERFACE IN ORDER TO REDUCE BANDING PERPENDICULAR TO THE DIRECTION OF GROWTH. THE METHOD IS APPLIED WHEN NO EXTERNAL SOURCE OF ELECTRIC CURRENT IS ELECTRICALLY CONNECTED TO THE MATERIAL, AND THE SOLIDIFICATION PROCESS MAY INCLUDE PULLING FROM THE MELT, ZONE MELTING OR NORMAL FREEZING.

9. 发明授权

US3437451A Selective precipitation of potassium chloride from brine using organoamines 失效
标题翻译：使用有机酸从碱性氯酸钾中选择性降解
公开(公告)号：US3437451A
公开(公告)日：1969-04-08
申请号：US3437451D
申请日：1965-12-28
申请人： CONTINENTAL OIL CO
发明人： EVERY RICHARD L , THIEME JAMES O , CASAD BURTON M
IPC分类号： C01D17/00 , B01J17/06
CPC分类号： C01D17/006

10. 发明授权

US4169755A Growth of crystalline rods of gallium arsenide in a crucible of specially treated fibrous silicon dioxide 失效
标题翻译：在特殊处理的纤维状二氧化硅的坩埚中生长砷化镓结晶棒
公开(公告)号：US4169755A
公开(公告)日：1979-10-02
申请号：US886406
申请日：1978-03-14
申请人： Jean-Pierre Besselere
发明人： Jean-Pierre Besselere
IPC分类号： C30B11/00 , C30B13/14 , C30B29/40 , B01J17/06
CPC分类号： C30B13/14 , C30B11/002 , Y10S117/90
摘要： A method of manufacturing a rod of crystalline material in a crucible formed at least partly by a fabric of refractory fibrous material.Prior to its use the crucible is subjected to a preparatory treatment consisting mainly of wetting the inner face by means of gallium.Application: Manufacture of rods of semiconductor material.
摘要翻译：至少部分由耐火纤维材料织物形成的坩埚中制造结晶材料棒的方法。

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