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1. 发明授权

US09954522B2 Hybrid switch including GaN HEMT and MOSFET 有权
公开(公告)号：US09954522B2
公开(公告)日：2018-04-24
申请号：US15639183
申请日：2017-06-30
申请人： HELLA GmbH & Co. KGaA
发明人： Juncheng Lu , Hua Bai , Hui Teng
IPC分类号： H03B1/00 , H03K3/00 , H03K17/284 , H01L29/78 , H01L29/16 , H01L29/778 , H01L29/20
CPC分类号： H03K17/284 , H01L27/0605 , H01L27/0629 , H01L27/0635 , H01L29/16 , H01L29/2003 , H01L29/7787 , H01L29/7805 , H02M3/3376 , H03K17/04123 , H03K17/122 , H03K17/163 , H03K17/602 , H03K17/6871 , H03K17/6872
摘要： A hybrid switch apparatus includes a gate drive circuit producing a gate drive signal, a GaN high electron mobility transistor (HEMT) having a first gate, a first drain, and a first source. A silicon (Si) MOSFET has a second gate, a second drain, and a second source. The GaN HEMT and the Si MOSFET are connected in a parallel arrangement so that (i) the first drain and the second drain are electrically connected and (ii) the first source and the second source are electrically connected. The second gate is connected to the gate drive circuit output to receive the gate drive signal. A delay block has an input connected to the gate drive circuit output and an delay block output is configured to produce a delayed gate drive signal for driving the GaN HEMT.

2. 发明授权

US09588626B2 Capacitive sensing button on chip 有权
标题翻译：电容式感应按钮芯片
公开(公告)号：US09588626B2
公开(公告)日：2017-03-07
申请号：US14632191
申请日：2015-02-26
申请人： Cypress Semiconductor Corporation
发明人： Rajagopal Narayanasamy , Mahadevan Krishnamurthy Narayana Swamy , David G. Wright , Steve Kolokowsky
IPC分类号： G01R27/26 , G06F3/041 , G06F3/045 , G06F3/044 , H03K17/96 , G01D5/24 , G06F3/01 , H03K17/60
CPC分类号： G06F3/044 , G01D5/2405 , G06F3/016 , G06F2203/04101 , G06F2203/04106 , H03K17/602 , H03K17/962 , H03K2017/9602 , H03K2217/960715 , H03K2217/960725 , H03K2217/960755
摘要： A method and apparatus include a plurality of sensor elements arranged within an integrated circuit package and a controller arranged within the integrated circuit package and coupled to the plurality of sensor elements. The controller is configured to apply a transmit signal to a first sensor element of the plurality of sensor elements and receive a receive signal from a second sensor element of the plurality of sensor elements. The receive signal represents a mutual capacitance of the first sensor element and the second sensor element.
摘要翻译：一种方法和装置包括布置在集成电路封装内的多个传感器元件和布置在集成电路封装内并耦合到多个传感器元件的控制器。控制器被配置为将发射信号施加到多个传感器元件中的第一传感器元件并且从多个传感器元件中的第二传感器元件接收接收信号。接收信号表示第一传感器元件和第二传感器元件的互电容。

3. 发明授权

US09444449B2 Circuits, methods, and systems with optimized operation of double-base bipolar junction transistors 有权
标题翻译：具有双基极双极结晶体管优化工作的电路，方法和系统
公开(公告)号：US09444449B2
公开(公告)日：2016-09-13
申请号：US14935344
申请日：2015-11-06
申请人： Ideal Power Inc.
发明人： William C. Alexander , Richard A. Blanchard
IPC分类号： H03K17/0412 , H03K17/60 , H01L29/747 , H01L29/74 , H01L29/872
CPC分类号： H03K17/66 , H01L27/0694 , H01L29/0804 , H01L29/0821 , H01L29/1004 , H01L29/1095 , H01L29/7302 , H01L29/732 , H01L29/735 , H01L29/7412 , H01L29/7416 , H01L29/747 , H01L29/872 , H02M1/08 , H02M7/219 , H02M2007/2195 , H03K17/60 , H03K17/602 , H03K17/687 , H03K2217/0054
摘要： The present application teaches, inter alia, methods and circuits for operating a B-TRAN (double-base bidirectional bipolar junction transistor). Exemplary base drive circuits provide high-impedance drive to the base contact region on the side of the device instantaneously operating as the collector. (The B-TRAN is controlled by applied voltage rather than applied current.) Current signals operate preferred implementations of drive circuits to provide diode-mode turn-on and pre-turnoff operation, as well as a hard ON state with low voltage drop (the “transistor-ON” state). In some preferred embodiments, self-synchronizing rectifier circuits provide adjustable low voltage for gate drive circuits. In some preferred embodiments, the base drive voltage used to drive the c-base region (on the collector side) is varied while base current at that terminal is monitored, so no more base current than necessary is applied. This solves the difficult challenge of optimizing base drive in a B-TRAN.
摘要翻译：本申请尤其教导了用于操作B-TRAN（双基极双极结型晶体管）的方法和电路。示例性的基本驱动电路向作为集电器瞬时操作的装置一侧的基极接触区域提供高阻抗驱动。（B-TRAN由施加的电压而不是施加电流控制。）电流信号操作驱动电路的优选实施方式，以提供二极管模式导通和预关断操作，以及具有低电压降的硬导通状态（ “晶体管导通”状态）。在一些优选实施例中，自同步整流电路为栅极驱动电路提供可调节的低电压。在一些优选实施例中，用于驱动c基极区域（集电极侧）的基极驱动电压随着该端子处的基极电流被监测而变化，因此不再施加所需的基极电流。这解决了在B-TRAN中优化基础驱动的困难挑战。

4. 发明授权

US07598781B2 Capacitive load driving device 有权
标题翻译：电容式负载驱动装置
公开(公告)号：US07598781B2
公开(公告)日：2009-10-06
申请号：US11878792
申请日：2007-07-26
申请人： Yutaka Takita
发明人： Yutaka Takita
IPC分类号： H03B1/00
CPC分类号： G02F1/0516 , G02F1/035 , G02F1/313 , H03K17/04126 , H03K17/602
摘要： A capacitive load driving device applies a multi-level voltage to a capacitive load to drive the capacitive load. In the capacitive load driving device, a voltage control signal generator unit generates a voltage control signal. A voltage amplifier unit amplifies a voltage of the voltage control signal. A current amplifier unit amplifies a current of an output of the voltage amplifier unit to perform charging of the capacitive load. A falling control signal generator unit generates a falling pulse having a predetermined pulse width when a width of falling of the voltage control signal exceeds a predetermined value. A switching unit performs discharging of the capacitive load in response to the falling pulse received.
摘要翻译：容性负载驱动装置将多电平电压施加到电容性负载以驱动电容性负载。在电容性负载驱动装置中，电压控制信号发生器单元产生电压控制信号。电压放大器单元放大电压控制信号的电压。电流放大器单元放大电压放大器单元的输出的电流以进行电容性负载的充电。当电压控制信号的下降宽度超过预定值时，下降控制信号发生器单元产生具有预定脉冲宽度的下降脉冲。开关单元响应于接收到的下降脉冲来执行电容性负载的放电。

5. 发明授权

US3860836A Stabilization of emitter followers 失效
标题翻译：发动机的稳定性
公开(公告)号：US3860836A
公开(公告)日：1975-01-14
申请号：US31105072
申请日：1972-12-01
申请人： HONEYWELL INC
发明人： PEDERSEN RICHARD A
IPC分类号： H01L21/00 , H01L27/07 , H03K17/60 , H03K19/003 , H01L19/00
CPC分类号： H03K19/00353 , H01L21/00 , H01L27/0755 , H03K17/602 , Y10S148/02 , Y10S148/055 , Y10S148/085 , Y10S148/122 , Y10S148/133 , Y10S148/136
摘要： A circuit and a device construction for stabilizing rapidly responsive emitter follower circuits particularly for use in rapid systems.
摘要翻译：用于稳定快速响应的射极跟随器电路的电路和器件结构，特别用于快速系统。

6. 发明公开

US20230327663A1 SUPER SOURCE FOLLOWER WITH FEEDBACK RESISTOR AND INDUCTIVE PEAKING 审中-公开
公开(公告)号：US20230327663A1
公开(公告)日：2023-10-12
申请号：US17718139
申请日：2022-04-11
申请人： Avago Technologies International Sales Pte. Limited.
发明人： Guansheng Li , Delong Cui , Jun Cao
IPC分类号： H03K17/60
CPC分类号： H03K17/602 , H04B10/40
摘要： A system including a source follower circuit is disclosed. The source follower circuit configured as a voltage buffer that includes a first common-drain transistor that passes an input signal at the gate to an output loading capacitor at the source, and a second common-drain transistor that is used as a bias current source. The source follower circuit includes a first resistor at the drain of the first transistor generating a first voltage that is fed back through a first path through the gate of the second transistor so as to produce additional current to help the output signal catch up with the input voltage. The source follower circuit further includes an inductive element and bias circuit, which along with the first resistor, increases bandwidth and reduced settling time.

7. 发明申请

US20170324406A1 BRIDGE LEG CIRCUIT ASSEMBLY AND FULL-BRIDGE CIRCUIT ASSEMBLY 审中-公开
公开(公告)号：US20170324406A1
公开(公告)日：2017-11-09
申请号：US15586646
申请日：2017-05-04
申请人： General Electric Company
发明人： Tao WU , Fei LI
IPC分类号： H03K17/66 , H01L23/482 , H03K17/06 , H03K17/567 , H03K17/60 , H05K1/05
CPC分类号： H03K17/66 , H01L23/4821 , H01L23/538 , H01L25/072 , H03K17/063 , H03K17/567 , H03K17/602 , H05K1/0203 , H05K1/05 , H05K1/182 , H05K3/0061
摘要： A bridge leg circuit assembly comprising: a circuit board, a first active switch die, and a second active switch die. The circuit board having an insulating plate with a first and second side and a first and second conducting layer on the first and second sides of the insulating plate, respectively. The second conducting layer having a first and second conducting region that are insulated from each other. The first active switch die having an opposing first side, facing and coupled with the first conducting region, and an opposing second side, coupled with the second conducting region, which are embedded into the circuit board. The second active switch die having an opposing first side, coupled with the second conducting region, and an opposing second side, coupled with the first conducting layer, which are embedded into the circuit board.

8. 发明授权

US09787302B2 Source driver circuit and control method thereof 有权
公开(公告)号：US09787302B2
公开(公告)日：2017-10-10
申请号：US14944329
申请日：2015-11-18
申请人： Silergy Semiconductor Technology (Hangzhou) LTD
发明人： Jian Deng , Guojia Liu
IPC分类号： H02M3/158 , H03K17/60 , H03K17/687
CPC分类号： H03K17/602 , H02M3/158 , H03K17/6871
摘要： A source driver circuit can include: (i) a control transistor having a control terminal and first and second power terminals, where the control transistor is coupled between a power terminal of a main switching transistor and ground; (ii) a power supply capacitor coupled between the control terminal of the main switching transistor and ground, where the power supply capacitor is configured to receive a bias voltage that is substantially constant; (iii) a freewheeling diode having a cathode coupled to a control terminal of the main switching transistor, and an anode coupled to the second power terminal of the main switching transistor; and (iv) the control transistor being controllable to be periodically turned on and off to control the main switching transistor to correspondingly follow on and off states of the control transistor.

9. 发明申请

US20160204714A1 Variable-Voltage Self-Synchronizing Rectifier Circuits, Methods, and Systems 审中-公开
标题翻译：可变电压自同步整流电路，方法和系统
公开(公告)号：US20160204714A1
公开(公告)日：2016-07-14
申请号：US14935336
申请日：2015-11-06
申请人： Ideal Power Inc.
发明人： William C. Alexander
IPC分类号： H02M7/219
CPC分类号： H03K17/66 , H01L27/0694 , H01L29/0804 , H01L29/0821 , H01L29/1004 , H01L29/1095 , H01L29/7302 , H01L29/732 , H01L29/735 , H01L29/7412 , H01L29/7416 , H01L29/747 , H01L29/872 , H02M1/08 , H02M7/219 , H02M2007/2195 , H03K17/60 , H03K17/602 , H03K17/687 , H03K2217/0054
摘要： The present application teaches, among other innovations, methods and circuits for operating a B-TRAN (double-base bidirectional bipolar junction transistor). A base drive circuit is described which provides high-impedance drive to the base contact region on whichever side of the device is operating as the collector (at a given moment). (The B-TRAN, unlike other bipolar junction transistors, is controlled by applied voltage rather than applied current.) The preferred implementation of the drive circuit is operated by control signals to provide diode-mode turn-on and pre-turnoff operation, as well as a hard ON state with a low voltage drop (the “transistor-ON” state). In some but not necessarily all preferred embodiments, an adjustable low voltage for the gate drive circuit is provided by a self-synchronizing rectifier circuit. Also, in some but not necessarily all preferred embodiments, the base drive voltage used to drive the c-base region (on the collector side) is varied while the base current at that terminal is monitored, so that no more base current than necessary is applied. This solves the difficult challenge of optimizing base drive in a B-TRAN.
摘要翻译：除了其他创新之外，本申请教导了用于操作B-TRAN（双基极双极结型晶体管）的方法和电路。描述了一种基本驱动电路，其在设备的任何一侧作为收集器（在给定时刻）提供对基底接触区域的高阻抗驱动。（B-TRAN与其他双极结型晶体管不同，由施加的电压而不是施加的电流控制。）驱动电路的优选实现由控制信号操作，以提供二极管模式导通和预关断操作，如以及具有低电压降（“晶体管接通”状态）的硬导通状态。在一些但不一定所有的优选实施例中，栅极驱动电路的可调低电压由自同步整流电路提供。此外，在一些但不一定所有优选实施例中，用于驱动c-基极区域（集电极侧）的基极驱动电压在监测该端子处的基极电流的同时被改变，使得不再需要基极电流应用。这解决了在B-TRAN中优化基础驱动的困难挑战。

10. 发明授权

US08970230B2 Capacitive sensing button on chip 有权
标题翻译：电容式感应按钮芯片
公开(公告)号：US08970230B2
公开(公告)日：2015-03-03
申请号：US13340667
申请日：2011-12-29
申请人： Rajagopal Narayanasamy , Mahadevan Krishnamurthy Narayana Swamy , David Wright , Steven Kolokowsky
发明人： Rajagopal Narayanasamy , Mahadevan Krishnamurthy Narayana Swamy , David Wright , Steven Kolokowsky
IPC分类号： G01R27/26 , G06F3/041 , G06F3/045 , H03K17/96 , G01D5/24 , G06F3/044 , H03K17/60
CPC分类号： G06F3/044 , G01D5/2405 , G06F3/016 , G06F2203/04101 , G06F2203/04106 , H03K17/602 , H03K17/962 , H03K2017/9602 , H03K2217/960715 , H03K2217/960725 , H03K2217/960755
摘要： An embodiment of an integrated circuit device may comprise an integrated circuit package, a sensor element attached within the integrated circuit package, a capacitance sensor coupled with the sensor element and situated within the integrated circuit package, wherein the capacitance sensor is configured to measure a capacitance of the sensor element, and an output pin positioned at the exterior of the integrated circuit package, wherein the output pin is configured to carry a signal based on the measured capacitance of the sensor element.
摘要翻译：集成电路器件的实施例可以包括集成电路封装，附接在集成电路封装内的传感器元件，与传感器元件耦合并位于集成电路封装内的电容传感器，其中电容传感器被配置为测量电容以及位于所述集成电路封装外部的输出引脚，其中所述输出引脚被配置为基于所测量的所述传感器元件的电容来承载信号。

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