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1. 发明申请

US20110254610A1 Distributive Resistive Mixer 失效
标题翻译：分布式电阻式搅拌机
公开(公告)号：US20110254610A1
公开(公告)日：2011-10-20
申请号：US13063001
申请日：2009-08-28
申请人： Ullrich Pfeiffer , Erik Oejefors , Hartmut G. Roskos , Alvydas Lisauskas
发明人： Ullrich Pfeiffer , Erik Oejefors , Hartmut G. Roskos , Alvydas Lisauskas
IPC分类号： G06G7/16
CPC分类号： H03D7/125 , H03D1/18 , H03D9/0675 , H03D2200/0074
摘要： The invention relates to devices comprising field effect transistors to detect the power of an electromagnetic high frequency signal VRF. According to the prior art, the high frequency signal is coupled into the gate G and via a capacitor CGD into the drain D of the field effect transistor FET, the gate G being biased with a direct voltage Vg which corresponds to the threshold value of the FET transistor. The resulting current at the source S contains a direct current portion Ids which is proportional to the square of the amplitude of the high frequency signal. The operating frequency of said power detectors is limited to a few gigahertz (GHz) by the discrete arrangement and especially by the predetermined gate length of the field effect transistor. The aim of the invention is to improve a resistive mixer in such a manner that it can be operated at high gigahertz and terahertz frequencies. For this purpose, the resistive mixer comprises a line which has a first and a second electrical conductor having respective connecting contacts so that an electrical high frequency signal can be coupled into the line, the first conductor having a plurality of series-connected voltage-dependent resistor elements (R) and at least one capacitive element (C) being interposed between the first and the second conductor.
摘要翻译：本发明涉及包含用于检测电磁高频信号VRF的功率的场效应晶体管的装置。根据现有技术，高频信号通过电容器CGD耦合到栅极G中，并且通过电容器CGD耦合到场效应晶体管FET的漏极D中，栅极G被直接电压Vg偏置，直流电压Vg对应于 FET晶体管。源S处的结果电流包含与高频信号幅度的平方成比例的直流电流部分Ids。所述功率检测器的工作频率通过离散布置限制在几千兆赫兹（GHz），特别是场效应晶体管的预定栅极长度。本发明的目的是改进电阻式混频器，使得它可以在高千兆赫兹和太赫兹频率下工作。为此，电阻式混合器包括具有第一和第二电导体的线，其具有相应的连接触点，使得电气高频信号可以耦合到线路中，第一导体具有多个串联连接的电压依赖性电阻元件（R）和至少一个电容元件（C）插入在第一和第二导体之间。

2. 发明授权

US4751744A Monolithic distributed mixer 失效
标题翻译：单片分布式混频器
公开(公告)号：US4751744A
公开(公告)日：1988-06-14
申请号：US737770
申请日：1985-05-28
申请人： Anthony M. Pavio, Jr.
发明人： Anthony M. Pavio, Jr.
IPC分类号： H03D7/00 , H03D7/12 , H03D9/06 , H04B1/28 , H04B1/26
CPC分类号： H03D9/0675 , H03D2200/0007 , H03D2200/0076 , H03D7/125
摘要： A monolithic distributed mixer includes a plurality of dual gate field effect transistors (FETs) and first and second corresponding pluralities of T shaped constant K-filters connected respectively to first and second gates of the dual gate FETs for delaying in time the LO and RF voltages applied thereto whereby the phase shift is the same at each filter and the phase difference between the LO and RF at each FET is equal. Thus, the IF energy developed at each drain is in phase. The plurality of dual gate FETs have their drains commonly connected for summing the IF outputs thereof to provide a flat response throughout the bandwidth which is limited only by the cutoff voltages of the FETs or first and second pluralities of K-filters which act as low pass filters.
摘要翻译：单片分布式混频器包括多个双栅极场效应晶体管（FET）以及分别连接到双栅极FET的第一和第二栅极的第一和第二对应多个T形常数K滤波器，用于在时间上延迟LO和RF电压每个滤波器上的相移相同，并且每个FET处的LO和RF之间的相位差相等。因此，在每个漏极处产生的IF能量是同相的。多个双栅极FET通常连接其漏极，用于对其IF输出求和，以提供整个带宽中的平坦响应，该带宽仅受限于FET或第一和第二多个K滤波器的截止电压的限制，这些K滤波器作为低通过滤器。

3. 发明授权

US4723113A Very high frequency harmonic generator 失效
标题翻译：超高频谐波发生器
公开(公告)号：US4723113A
公开(公告)日：1988-02-02
申请号：US903350
申请日：1986-09-03
申请人： Jean-Felicien Marcoux
发明人： Jean-Felicien Marcoux
IPC分类号： H03B19/00 , H03B19/14 , H03D7/12 , H03D9/06
CPC分类号： H03D7/125 , H03B19/14 , H03D9/0675 , H03B19/00 , H03B2200/007
摘要： A very high frequency harmonic generator utilizes a type III-V (e.g. GaAs) FET. An input signal is applied to the gate of the FET at a sufficient level to induce non-linear functioning of the FET. This causes an output signal to appear between the source and drain having frequency components of at least the tenth harmonic of the input signal. The device is particularly applicable to the generation of microwave signals.
摘要翻译：一个非常高频的谐波发生器利用III-V型（例如GaAs）FET。输入信号以足够的电平施加到FET的栅极，以引起FET的非线性功能。这导致在源极和漏极之间出现输出信号，其频率分量至少为输入信号的十次谐波。该装置特别适用于产生微波信号。

4. 发明申请

US20100081409A1 MINIATURIZED DUAL-BALANCED MIXER CIRCUIT BASED ON A MULTILAYER DOUBLE SPIRAL LAYOUT ARCHITECTURE 有权
标题翻译：基于多层双螺旋布置架构的微型双平衡混合器电路
公开(公告)号：US20100081409A1
公开(公告)日：2010-04-01
申请号：US12391790
申请日：2009-02-24
申请人： Che-Chung Kuo , Huei Wang
发明人： Che-Chung Kuo , Huei Wang
IPC分类号： H04B1/26
CPC分类号： H03D9/0633 , H03D9/0675
摘要： A miniaturized dual-balanced mixer circuit based on a multilayer double spiral layout architecture is proposed, which is designed for use to provide a frequency mixing function for millimeter wave (MMW) signals, and which features a downsized circuit layout architecture that allows IC implementation to be more miniaturized than the conventional star-type dual-balanced mixer (DBM). The proposed miniaturized dual-balanced mixer circuit is distinguished from the conventional star-type DBM particularly in the use of a 3-dimensional double-spiral circuit layout architecture for the layout of two balun circuit units. This feature allows the required layout area to be only about 15% of that of the conventional star-type DBM.
摘要翻译：提出了一种基于多层双螺旋布局架构的小型化双平衡混频器电路，其设计用于提供毫米波（MMW）信号的混频功能，其特征在于使电路布局架构简化，允许IC实现比传统的星型双平衡混合器（DBM）更小型化。所提出的小型化双平衡混频器电路与传统的星型DBM不同，特别是使用三维双螺旋电路布局架构来布置两个平衡 - 不平衡转换器单元。该特征允许所需的布局面积仅为常规星型DBM的约15％。

5. 发明申请

US20100079189A1 MINIATURIZED DUAL-BALANCED MIXER CIRCUIT BASED ON A DOUBLE SPIRAL LAYOUT ARCHITECTURE 有权
标题翻译：基于双螺旋布置架构的微型双平衡混频器电路
公开(公告)号：US20100079189A1
公开(公告)日：2010-04-01
申请号：US12391622
申请日：2009-02-24
申请人： Che-Chung Kuo , Huei Wang
发明人： Che-Chung Kuo , Huei Wang
IPC分类号： G06G7/12
CPC分类号： H03D9/0633 , H03D9/0675
摘要： A miniaturized dual-balanced mixer circuit based on a double spiral layout architecture is proposed, which is designed for use to provide a frequency mixing function for millimeter wave (MMW) signals, and which features a downsized circuit layout architecture that allows IC implementation to be more miniaturized than the conventional star-type dual-balanced mixer (DBM). The proposed miniaturized dual-balanced mixer circuit is distinguished from the conventional star-type DBM particularly in the use of a double spiral layout architecture for the layout of two balun circuit units. This feature allows the required layout area to be only about 15% of that of the conventional star-type DBM.
摘要翻译：提出了一种基于双螺旋布局架构的小型双平衡混频器电路，其设计用于提供毫米波（MMW）信号的混频功能，其特征在于使IC实现成为可能性小的电路布局架构比传统的星型双平衡混频器（DBM）更小型化。所提出的小型化双平衡混频器电路与传统的星型DBM不同，特别是在使用双螺旋布局架构来布置两个平衡 - 不平衡转换器单元的情况下。该特征允许所需的布局面积仅为常规星型DBM的约15％。

6. 发明授权

US5625307A Low cost monolithic gallium arsenide upconverter chip 失效
标题翻译：低成本单片砷化镓上变频芯片
公开(公告)号：US5625307A
公开(公告)日：1997-04-29
申请号：US845293
申请日：1992-03-03
申请人： Norman R. Scheinberg
发明人： Norman R. Scheinberg
IPC分类号： H03D7/12 , H03D7/14 , H03D7/18 , H03D9/06 , H03B19/00 , H01L25/00 , H04B1/28
CPC分类号： H03F3/45197 , H03D7/125 , H03D7/14 , H03D7/1408 , H03D7/1441 , H03D7/1458 , H03D7/1483 , H03D7/1491 , H03D9/0675 , H01L2924/0002 , H03D2200/0019 , H03D2200/0025 , H03D2200/0027 , H03D2200/0043 , H03D2200/0084 , H03D7/18 , H03F2203/45228 , H03F2203/45256 , H03F2203/45258 , H03F2203/45458 , H03F2203/45464 , H03F2203/45466
摘要： A monolithic upconverter integrated circuit is described which performs the first frequency conversion of a dual conversion cable television (CATV) receiver. The upconverter chip includes three functional blocks: a Gilbert type image-rejecting mixer, a phase splitter, and a voltage-controlled oscillator. Mixing is performed by a novel Gilbert type mixer including image-rejection inductors to improve the noise figure of the mixer. A differential circuit topology allows the monolithic upconverter chip to utilize a plastic dual inline batwing package without considerable performance loss. On-chip RF bypass networks, in the form of series RC terminations, also help compensate for the undesirable effects of pin inductances in the dual inline package. A resistor-based DC biasing scheme dramatically reduces power-up latency, allowing faster testing.
摘要翻译：描述了执行双转换有线电视（CATV）接收机的第一次频率转换的单片上变频器集成电路。上变频器芯片包括三个功能块：吉尔伯特型图像抑制混频器，分相器和压控振荡器。混合是通过一种新颖的吉尔伯特式混合器进行，包括镜像抑制电感器，以改善混频器的噪声系数。差分电路拓扑结构允许单片上变频器芯片利用塑料双列直插蝙蝠包装，而不会造成相当大的性能损失。以串联RC端接形式的片上RF旁路网络还有助于补偿双列直插封装中引脚电感的不良影响。基于电阻器的直流偏置方案可大大降低上电延迟，从而实现更快的测试。

7. 发明授权

US5563545A Low cost monolithic GaAs upconverter chip 失效
标题翻译：低成本单片GaAs上变频芯片
公开(公告)号：US5563545A
公开(公告)日：1996-10-08
申请号：US312730
申请日：1994-09-27
申请人： Norman R. Scheinberg
发明人： Norman R. Scheinberg
IPC分类号： H03D7/12 , H03D7/14 , H03D7/18 , H03D9/06 , H03K17/16 , H03K17/687
CPC分类号： H03F3/45197 , H03D7/125 , H03D7/14 , H03D7/1408 , H03D7/1441 , H03D7/1458 , H03D7/1483 , H03D7/1491 , H03D9/0675 , H01L2924/0002 , H03D2200/0019 , H03D2200/0025 , H03D2200/0027 , H03D2200/0043 , H03D2200/0084 , H03D7/18 , H03F2203/45228 , H03F2203/45256 , H03F2203/45258 , H03F2203/45458 , H03F2203/45464 , H03F2203/45466
摘要： A monolithic upconverter integrated circuit is described which performs the first frequency conversion of a dual conversion cable television (CATV) receiver. The upconverter chip includes three functional blocks: a Gilbert type image-rejecting mixer, a phase splitter, and a voltage-controlled oscillator. Mixing is performed by a novel Gilbert type mixer including image-rejection inductors to improve the noise figure of the mixer. A differential circuit topology allows the monolithic upconverter chip to utilize a plastic dual inline batwing package without considerable performance loss. On-chip RF bypass networks, in the form of series RC terminations, also help compensate for the undesirable effects of pin inductances in the dual inline package. A resistor-based DC biasing scheme dramatically reduces power-up latency, allowing faster testing.
摘要翻译：描述了执行双转换有线电视（CATV）接收机的第一次频率转换的单片上变频器集成电路。上变频器芯片包括三个功能块：吉尔伯特型图像抑制混频器，分相器和压控振荡器。混合是通过一种新颖的吉尔伯特式混合器进行，包括镜像抑制电感器，以改善混频器的噪声系数。差分电路拓扑结构允许单片上变频器芯片利用塑料双列直插蝙蝠包装，而不会造成相当大的性能损失。以串联RC端接形式的片上RF旁路网络还有助于补偿双列直插封装中引脚电感的不良影响。基于电阻器的直流偏置方案可大大降低上电延迟，从而实现更快的测试。

8. 发明授权

US5345194A FET having two gate bonding pads for use in high frequency oscillator 失效
标题翻译： FET具有用于高频振荡器的两个栅极焊盘
公开(公告)号：US5345194A
公开(公告)日：1994-09-06
申请号：US914209
申请日：1992-07-14
申请人： Isamu Nagasako
发明人： Isamu Nagasako
IPC分类号： H01L27/06 , H01L21/338 , H01L21/8232 , H01L29/423 , H01L29/812 , H03B5/18 , H03B7/14 , H03D9/06 , H04B1/26
CPC分类号： H01L29/42316 , H03B5/1852 , H03D9/0675 , H01L2224/48091 , H01L2224/73265 , H01L2924/12032 , H03B7/14
摘要： A FET comprising two or more gate pads or terminals, and a reflection type oscillator including the above-mentioned FET. In this oscillator, a dielectric resonator is connected through a coupling line to the first gate pad of the FET and an output terminal is connected to the second pad. When the drain pad of the FET is connected to ground, and a suitable value of capacitive reactance is added to the source pad, then a negative resistance -R appears on the first gate pad, and thus oscillation occurs at a resonance frequency fo of the dielectric resonator. If the load resistance value viewed from the second gate pad is set to R, the maximum oscillation output occurs. Accordingly this oscillator enables to set the oscillation conditions between the source and gate pads of the FET, and the output matching conditions between the second gate pad and the output terminal separately, and thus allows to set the oscillation conditions and the output matching conditions, respectively, simultaneously to the optimum values.
摘要翻译：包括两个或更多个栅极焊盘或端子的FET和包括上述FET的反射型振荡器。在该振荡器中，通过耦合线将介质谐振器连接到FET的第一栅极焊盘，并且输出端子连接到第二焊盘。当FET的漏极焊盘连接到地，并且将适当的电容电抗值加到源极焊盘上时，在第一栅极焊盘上出现负的电阻-R，因此，振荡发生在谐振频率fo 介质谐振器。如果从第二栅极焊盘观察的负载电阻值设定为R，则发生最大振荡输出。因此，该振荡器能够分别设置FET的源极和栅极焊盘之间的振荡条件以及第二栅极焊盘和输出端子之间的输出匹配条件，并且因此允许分别设置振荡条件和输出匹配条件，同时达到最佳值。

9. 发明授权

US5136720A Matrixed mixer 失效
标题翻译： MATRIXED MIXER
公开(公告)号：US5136720A
公开(公告)日：1992-08-04
申请号：US444193
申请日：1989-11-30
申请人： Ward S. Titus , Paul A. Bernkopf
发明人： Ward S. Titus , Paul A. Bernkopf
IPC分类号： H03D7/12 , H03D7/14 , H03D9/06 , H03F3/60
CPC分类号： H03D7/1441 , H03D9/0675 , H03F3/607 , H03D2200/0007 , H03D2200/0023 , H03D2200/0043 , H03D2200/0076 , H03D7/125 , H03F2200/198
摘要： A matrix mixer includes an amplifier having a plurality of successively coupled transistors and a mixer stage comprised of a plurality of mixer elements successively connected by a common transmission line to output of the plurality of transistors of the amplifier. A matrix provides a circuit having improved gain characteristics and improved isolation between the local oscillator and the input RF signal terminals. Moreover, due to shared transmission lines, smaller circuit sizes is also provided.

10. 发明授权

US5027163A High level wide band RF mixer 失效
标题翻译：高级宽带射频混频器
公开(公告)号：US5027163A
公开(公告)日：1991-06-25
申请号：US281156
申请日：1988-12-06
申请人： Pierre Dobrovolny
发明人： Pierre Dobrovolny
IPC分类号： H03D7/12 , H03D7/14 , H03D9/06
CPC分类号： H03D9/0675 , H03D2200/0023 , H03D2200/0088 , H03D2200/009 , H03D7/125 , H03D7/14
摘要： A wide band RF mixer includes a first bifilar balun transformer coupling a high level source of RF signal to the input winding of a trifilar balun transformer. The two output windings of the trifilar balun transformer are connected in series with the drain-source circuits of a pair of GaAs FET transistors. The source of each FET transistor is connected to ground. A local oscillator has a symmetric output signal that is coupled to a self-bias network and also to the gate electrodes of said FETs. An IF output signal is taken between ground and a common junction of the output balun windings. The arrangement provides a high level mixer with good intermodulation characteristics for ultra high frequencies.
摘要翻译：宽带RF混频器包括将高信号RF信号耦合到三相平衡 - 不平衡变压器的输入绕组的第一双平衡 - 不平衡变压器变压器。三相平衡不平衡变压器的两个输出绕组与一对GaAs FET晶体管的漏 - 源电路串联连接。每个FET晶体管的源极接地。本地振荡器具有对称输出信号，其耦合到自偏压网络并且还耦合到所述FET的栅电极。在输出平衡 - 不平衡转换绕组的地与公共端之间采用中频输出信号。该装置为超高频提供了具有良好互调特性的高电平混频器。

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