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1. 发明公开

US20240235520A9 FILTER DEVICE AND MULTIPLEXER 审中-公开
公开(公告)号：US20240235520A9
公开(公告)日：2024-07-11
申请号：US18399792
申请日：2023-12-29
申请人： Murata Manufacturing Co., Ltd.
发明人： Tomoya SATO , Hiroyuki FURUSATO , Takayuki OKUDE , Seima KONDO , Kota OKUBO , Yoshinori KAMEOKA
IPC分类号： H03H9/05 , H03H9/02 , H03H9/64
CPC分类号： H03H9/0576 , H03H9/02574 , H03H9/02661 , H03H9/6433
摘要： A filter device includes a piezoelectric substrate, a dielectric layer on the piezoelectric substrate, a first IDT electrode on the dielectric layer, a second IDT electrode positioned on the piezoelectric substrate in an area where the dielectric layer is not provided such that the first and second IDT electrodes are side by side in an acoustic wave propagation direction extending along a principal surface of the piezoelectric substrate, a first reflector on the dielectric layer and adjacent to the first IDT electrode on a side of the second IDT electrode, and a second reflector on the piezoelectric substrate and adjacent to the second IDT electrode on a side of the first IDT electrode. The dielectric layer includes an edge portion between the first and second reflectors in planar view seen from a stacking direction of the piezoelectric substrate and the dielectric layer.

2. 发明公开

US20240137000A1 FILTER DEVICE AND MULTIPLEXER 审中-公开
公开(公告)号：US20240137000A1
公开(公告)日：2024-04-25
申请号：US18399792
申请日：2023-12-29
申请人： Murata Manufacturing Co., Ltd.
发明人： Tomoya SATO , Hiroyuki FURUSATO , Takayuki OKUDE , Seima KONDO , Kota OKUBO , Yoshinori KAMEOKA
IPC分类号： H03H9/05 , H03H9/02 , H03H9/64
CPC分类号： H03H9/0576 , H03H9/02574 , H03H9/02661 , H03H9/6433
摘要： A filter device includes a piezoelectric substrate, a dielectric layer on the piezoelectric substrate, a first IDT electrode on the dielectric layer, a second IDT electrode positioned on the piezoelectric substrate in an area where the dielectric layer is not provided such that the first and second IDT electrodes are side by side in an acoustic wave propagation direction extending along a principal surface of the piezoelectric substrate, a first reflector on the dielectric layer and adjacent to the first IDT electrode on a side of the second IDT electrode, and a second reflector on the piezoelectric substrate and adjacent to the second IDT electrode on a side of the first IDT electrode. The dielectric layer includes an edge portion between the first and second reflectors in planar view seen from a stacking direction of the piezoelectric substrate and the dielectric layer.

3. 发明公开

US20230336144A1 FREQUENCY TUNABLE RF PHASE SHIFTER OR CIRCULATOR HAVING A WIDE-BAND SAW-MULTIFERROIC HYBRID DEVICE 审中-公开
公开(公告)号：US20230336144A1
公开(公告)日：2023-10-19
申请号：US18339695
申请日：2023-06-22
申请人： Government of the United States, as represented by the Secretary of the Air Force
发明人： Michael R. Page , Derek A. Bas , Piyush J. Shah , Michael J. Newburger , Michael E. McConney , Amber N. Reed
IPC分类号： H03H9/02 , H03H9/17
CPC分类号： H03H9/02574 , H03H9/171 , H03H9/02661
摘要： A nonreciprocal microwave phase shifter or circulator includes a substrate, a transducer on a surface of the substrate and configured to reciprocally convert between electrical signals to acoustic waves, a first piezoelectric material configured to generate and transport acoustic waves from a signal applied to the transducer, and a thin film magnetic material configured to couple to acoustic waves through magnetoelastic coupling so as to have nonreciprocal magnetoelastic coupled acoustic wave transport. Phase shifts of acoustic waves through the thin film magnetic material in directions toward and away the transducer have significantly different magnitudes.

4. 发明公开

US20230223917A1 ACOUSTIC WAVE DEVICE WITH VERTICALLY MASS LOADED MULTI-LAYER INTERDIGITAL TRANSDUCER ELECTRODE FOR TRANSVERSE MODE SUPPRESSION 审中-公开
公开(公告)号：US20230223917A1
公开(公告)日：2023-07-13
申请号：US18069115
申请日：2022-12-20
申请人： Skyworks Solutions, Inc.
发明人： Rei Goto , Hironori Fukuhara
IPC分类号： H03H9/02 , H03H9/64 , H03H9/13
CPC分类号： H03H9/02661 , H03H9/6489 , H03H9/131 , H03H9/02614
摘要： An acoustic wave device has a multilayer piezoelectric substrate (MPS) structure and a multilayer interdigital transducer electrode (IDT). The multilayer piezoelectric substrate includes a piezoelectric layer over a support substrate. An additional (functional) layer can optionally be interposed between the piezoelectric layer and the support substrate, which can facilitate bonding between these layers and provide temperature compensation. The multilayer IDT is disposed over the piezoelectric layer and includes a first layer of a first material with higher density and a second layer of a different material with lower density. The interdigital transducer electrode also includes (mass loading) strips disposed over (e.g., adjacent, in contact with) the second layer, which advantageously facilitate suppression of transverse mode.

5. 发明授权

US08803625B2 Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit 有权
标题翻译：表面声波谐振器，表面声波振荡器和表面声波模块单元
公开(公告)号：US08803625B2
公开(公告)日：2014-08-12
申请号：US13724469
申请日：2012-12-21
申请人： Seiko Epson Corporation
发明人： Kunihito Yamanaka
IPC分类号： H03H9/25 , H01L41/04
CPC分类号： H03B5/32 , H03H9/02543 , H03H9/02551 , H03H9/02661 , H03H9/02685 , H03H9/0547 , H03H9/1071 , H03H9/14517 , H03H9/14535 , H03H9/25 , H03H9/643
摘要： It is possible to reduce the size of a surface acoustic wave (SAW) resonator by enhancing a Q value. In a SAW resonator in which an IDT having electrode fingers for exciting SAW is disposed on a crystal substrate, the IDT includes a first region disposed at the center of the IDT and a second region and a third region disposed on both sides of the first region. A frequency is fixed in the first region and a portion in which a frequency gradually decreases as it approaches an edge of the IDT is disposed in the second region and the third region. When the frequency of the first region is Fa, the frequency at an edge of the second region is FbM, and the frequency at an edge of the third region is FcN, the variations in frequency are in the ranges of 0.9815
摘要翻译：可以通过提高Q值来减小表面声波（SAW）谐振器的尺寸。在具有用于激发SAW的电极指的IDT设置在晶体基板上的SAW谐振器中，IDT包括设置在IDT的中心的第一区域和设置在第一区域两侧的第二区域和第三区域。频率固定在第一区域中，并且随着其接近IDT的边缘，频率逐渐减小的部分被布置在第二区域和第三区域中。当第一区域的频率为Fa时，第二区域的边缘处的频率为FbM，第三区域的边缘的频率为FcN，频率的变化范围为0.9815

6. 发明授权

US08476984B2 Vibration device, oscillator, and electronic apparatus 有权
标题翻译：振动装置，振荡器和电子设备
公开(公告)号：US08476984B2
公开(公告)日：2013-07-02
申请号：US13312276
申请日：2011-12-06
申请人： Kunihito Yamanaka
发明人： Kunihito Yamanaka
IPC分类号： H03B5/32 , H03H9/02
CPC分类号： H03H9/02661 , H03H9/0009 , Y10T29/42
摘要： A vibration device includes: a first vibrator having a 3rd-order function temperature characteristic in which a 3rd-order temperature coefficient is −γ1, where γ1>0; and a second vibrator which is connected to the first vibrator, and has a 3rd-order function temperature characteristic in which a 3rd-order temperature coefficient is γ2, where γ2>0, wherein a difference between inflection points of the first and second vibrators is equal to or lower than 19° C., and a relationship of 0
摘要翻译：振动装置包括：第一振动器，其具有三阶函数温度特性，其中三阶温度系数为-gamma1，其中γ1> 0; 以及第二振动器，其连接到所述第一振动器，并且具有三阶函数温度特性，其中三阶温度系数是γ2，其中γ2> 0，其中第一和第二振动器的拐点之间的差为等于或低于19℃，以及0 <|γ1| @ | 2.4gamma2 |的关系满意

7. 发明授权

US08358177B2 Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit 有权
标题翻译：表面声波谐振器，表面声波振荡器和表面声波模块单元
公开(公告)号：US08358177B2
公开(公告)日：2013-01-22
申请号：US13125255
申请日：2009-10-22
申请人： Kunihito Yamanaka
发明人： Kunihito Yamanaka
IPC分类号： H01L41/04 , H03H9/64 , H03B5/30
CPC分类号： H03B5/32 , H03H9/02543 , H03H9/02551 , H03H9/02661 , H03H9/02685 , H03H9/0547 , H03H9/1071 , H03H9/14517 , H03H9/14535 , H03H9/25 , H03H9/643
摘要： It is possible to reduce the size of a surface acoustic wave (SAW) resonator by enhancing a Q value. In a SAW resonator in which an IDT having electrode fingers for exciting SAW is disposed on a crystal substrate, the IDT includes a first region disposed at the center of the IDT and a second region and a third region disposed on both sides of the first region. A frequency is fixed in the first region and a portion in which a frequency gradually decreases as it approaches an edge of the IDT is disposed in the second region and the third region. When the frequency of the first region is Fa, the frequency at an edge of the second region is FbM, and the frequency at an edge of the third region is FcN, the variations in frequency are in the ranges of 0.9815
摘要翻译：可以通过提高Q值来减小表面声波（SAW）谐振器的尺寸。在具有用于激发SAW的电极指的IDT设置在晶体基板上的SAW谐振器中，IDT包括设置在IDT的中心的第一区域和设置在第一区域两侧的第二区域和第三区域。频率固定在第一区域中，并且随着其接近IDT的边缘，频率逐渐减小的部分被布置在第二区域和第三区域中。当第一区域的频率为Fa时，第二区域的边缘处的频率为FbM，并且第三区域的边缘处的频率为FcN，频率的变化范围为0.9815

8. 发明申请

US20120086308A1 Surface acoustic wave device, electronic apparatus, and sensor apparatus 有权
标题翻译：声表面波装置，电子仪器和传感器装置
公开(公告)号：US20120086308A1
公开(公告)日：2012-04-12
申请号：US13223411
申请日：2011-09-01
申请人： Naohisa Obata , Kunihito Yamanaka
发明人： Naohisa Obata , Kunihito Yamanaka
IPC分类号： H01L41/04 , H03B5/32
CPC分类号： H03H9/02834 , H03H9/02551 , H03H9/02661 , H03H9/14538
摘要： A SAW device has an IDT which is provided in the principal surface of a quartz crystal substrate having Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, |ψ|≠90°×n (where n=0, 1, 2, 3)) and excites a Rayleigh wave (wavelength: λ) in a stopband upper end mode. Inter-electrode-finger grooves are recessed between the electrode fingers of the IDT. The depth G of the inter-electrode-finger grooves is 0.01λ≦G≦0.07λ, and an electrode finger thickness H and an IDT line occupancy η satisfy a predetermined relationship. Thus, a frequency-temperature characteristic constantly has an inflection point between a maximum value and a minimum value in an operation temperature range, thereby suppressing a fluctuation in an inflection-point temperature due to a manufacturing variation in the IDT line occupancy η.
摘要翻译： SAW器件具有IDT，其设置在具有欧拉角（-1.5°＆lt; l1; n1E; 1.5°，117°＆nlE;＆amp; Thetas;＆nlE; 142°，|ψ|≠90°的石英晶体基板的主表面上 °×n（其中n = 0,1,2,3））并且在阻带上端模式中激发瑞利波（波长：λ）。电极间指状槽凹陷在IDT的电极指之间。电极指状槽的深度G为0.01λ＆lt; NlE; G＆nlE;0.07λ，电极指厚度H和IDT线占有率＆满足预定的关系。因此，频率温度特性在操作温度范围内始终具有最大值和最小值之间的拐点，从而抑制由于IDT线占有率的制造变化引起的拐点温度的波动。

9. 发明申请

US20120049969A1 SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND ELECTRONIC DEVICE 有权
标题翻译：表面声波谐振器，表面声波振荡器和电子设备
公开(公告)号：US20120049969A1
公开(公告)日：2012-03-01
申请号：US13212801
申请日：2011-08-18
申请人： Takuya OWAKI , Kunihito YAMANAKA
发明人： Takuya OWAKI , Kunihito YAMANAKA
IPC分类号： H03B5/32 , H01L41/08
CPC分类号： H03H9/0542 , H03H9/02551 , H03H9/02661 , H03H9/02897
摘要： A surface acoustic wave resonator has a quartz crystal substrate having Euler angles of (φ=0°, 110°≦θ≦150°, 88°≦ψ≦92°) and an IDT having a plurality of electrode fingers disposed on the quartz crystal substrate, and using a surface acoustic wave as an excitation wave, a plurality of grooves arranged in a propagation direction of the surface acoustic wave to form stripes is disposed on the quartz crystal substrate, and the electrode fingers are disposed one of between the grooves and inside the grooves.
摘要翻译：表面声波谐振器具有石英晶体基板，其具有欧拉角（＆amp; 0°，110°＆amp; n1E;＆amp; The; n1E; 150°，88°＆amp; nlE;ψ＆nlE; 92°）和具有多个电极指设置在石英晶体基板上，并且使用表面声波作为激发波，在石英晶体基板上设置沿声表面波的传播方向排列形成条纹的多个槽，并且电极指一个在凹槽之间和凹槽内。

10. 发明授权

US07425788B2 Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US07425788B2
公开(公告)日：2008-09-16
申请号：US11627537
申请日：2007-01-26
申请人： Michio Kadota , Tetsuya Kimura
发明人： Michio Kadota , Tetsuya Kimura
IPC分类号： H03H9/145
CPC分类号： H03H9/02559 , H03H3/10 , H03H9/02661 , H03H9/14541
摘要： In a surface acoustic wave device, a plurality of grooves are provided on a piezoelectric substrate, an electrode film defining an IDT electrode is formed by filling an electrode material in the grooves, an insulator layer, such as a SiO2 film, is arranged so as to cover the piezoelectric substrate and the electrode film formed in the grooves, and the surface of the insulator layer is flattened.
摘要翻译：在表面声波装置中，在压电基板上设置多个槽，通过在槽内填充电极材料形成限定IDT电极的电极膜，例如SiO 2， SUB膜被布置成覆盖形成在凹槽中的压电基板和电极膜，并且绝缘体层的表面变平。

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