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1. 发明授权

US06621841B1 Phonon-pumped semiconductor lasers 失效
标题翻译：声子泵浦半导体激光器
公开(公告)号：US06621841B1
公开(公告)日：2003-09-16
申请号：US10132328
申请日：2002-04-23
申请人： Richard A. Soref , Gregory Sun
发明人： Richard A. Soref , Gregory Sun
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S1/00 , H01S5/04 , H01S5/0612 , H01S5/3022 , H01S5/3401 , H01S5/3402 , H01S5/3425
摘要： The first phonon-pumped semiconductor laser. The active region is an unbiased boron-doped Si0.94Ge0.06/Si superlattice with Si0.97Ge0.03 buffer layers embedded in a surface-plasmon strip waveguide. Warm and cool heat sinks create a temperature gradient across the waveguide. A heat buffer layer adjacent to the cool sink reflects optical phonons and transmits acoustic phonons. Within the resonator, the difference in effective temperatures of optical and acoustic phonons provides hole pumping for the lasing transition between the heavy-hole 2 (HH2) and heavy-hole 1(HH1) minibands. A gain of 280/cm at the 5THz emission frequency is predicted for 6×1017/cm3 doping at temperatures of 300K and 77K for optical and acoustic phonons, respectively.
摘要翻译：第一个声子泵浦半导体激光器。有源区是一个无偏硼掺杂的Si0.94Ge0.06 / Si超晶格，Si0.97Ge0.03缓冲层埋在表面等离子体激元条波导中。温暖和凉爽的散热器在波导上产生温度梯度。与冷却水槽相邻的热缓冲层反射光学声子并传输声学声子。在谐振器内，光学和声学声子的有效温度差异为重孔2（HH2）和重孔1（HH1）迷你型之间的激光过渡提供了空穴泵浦。在5THz发射频率下，对于光学和声学声子，在300K和77K的温度下分别预测6×10 17 / cm 3的掺杂增益为280 / cm。

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