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1. 发明授权

US4307411A Nonvolatile semiconductor memory device and method of its manufacture 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US4307411A
公开(公告)日：1981-12-22
申请号：US873603
申请日：1978-01-30
申请人： James E. Carnes , Murray H. Woods
发明人： James E. Carnes , Murray H. Woods
IPC分类号： H01L21/8247 , H01L29/78 , H01L29/788 , H01L29/792
CPC分类号： H01L29/792 , H01L29/78
摘要： An MNOS nonvolatile semiconductive memory device of the type which has a thick gate insulating layer overlapping the source and drain regions and a thin gate insulator layer in the memory portion of the device includes a region of relatively high concentration of impurities of the same type conductivity as the substrate in the portion of the channel which is beneath the thin gate insulating layer. This increases the values of both the low threshold and the high threshold states of the memory portion of the device so as to increase the threshold voltage window of the device.
摘要翻译：具有与栅极和漏极区重叠的厚栅极绝缘层和器件的存储器部分中的薄栅极绝缘体层的类型的MNOS非易失性半导体存储器件包括具有相同类型导电性的相对高浓度杂质的区域位于薄栅极绝缘层下方的沟道部分中的衬底。这增加了器件的存储器部分的低阈值和高阈值状态的值，以便增加器件的阈值电压窗口。

2. 发明授权

US4126836A Balanced capacitance charge transfer device 失效
标题翻译：平衡电容电荷转移装置
公开(公告)号：US4126836A
公开(公告)日：1978-11-21
申请号：US782753
申请日：1977-03-30
申请人： James E. Carnes , Robert H. Dawson
发明人： James E. Carnes , Robert H. Dawson
IPC分类号： G11C27/04 , H01L27/105 , H03H15/02 , H03H7/28 , G11C19/28 , H01L27/10 , H03K17/60
CPC分类号： H03H15/02 , G11C27/04 , H01L27/1057
摘要： An arrangement of charge transfer devices comprising a main signal transfer path defined by first and second sets of charge transfer electrodes, and an auxiliary path independent of the main path including a predetermined number of electrodes. Capacitances are respectively associated with the electrodes forming the first and second sets of electrodes of the main path, and with the electrodes of the auxiliary path. The electrodes of the auxiliary path are connected to the one of the sets of electrodes of the main channel to establish a desired relationship (e.g., balance) between the capacitances of the first and second sets of electrodes.
摘要翻译：电荷转移装置的布置包括由第一和第二组电荷转移电极限定的主信号传输路径，以及独立于包括预定数量的电极的主路径的辅助路径。电容分别与形成主路径的第一和第二组电极的电极以及辅助路径的电极相关联。辅助路径的电极连接到主通道的一组电极，以在第一和第二组电极的电容之间建立期望的关系（例如平衡）。

3. 发明授权

US4217605A Comb filter employing a charge transfer device with plural mutually proportioned signal charge inputs 失效
标题翻译：梳状滤波器采用具有多个相互成比例的信号电荷输入的电荷转移装置
公开(公告)号：US4217605A
公开(公告)日：1980-08-12
申请号：US930379
申请日：1978-08-02
申请人： James E. Carnes , Robert H. Dawson , Walter F. Kosonocky
发明人： James E. Carnes , Robert H. Dawson , Walter F. Kosonocky
IPC分类号： H04N9/67 , H01L27/105 , H03H15/00 , H03H15/02 , H04N9/78 , H04N9/535
CPC分类号： H01L27/1057 , H03H15/00 , H03H15/02 , H04N9/78
摘要： A comb filter comprising a charge transfer device (CTD) structure for separating frequency interleaved luminance and chrominance components of a composite color television signal directly within the CTD structure. The CTD structure has first and second pairs of input sections of substantially identical geometry, one input section of the second pair being preceded by a signal inverter. Signal charge as applied to the first and second input pairs are delayed such that signal charge from the first input pair exhibits a 1H delay relative to signal charge from the second input pair, when the signal charge from the respective input pairs are combined with each other. A first charge summing well combines mutually in-phase signal charge at multiples of the line scanning frequency from the first and second inputs to provide a combed luminance signal charge component, while a second well combines mutually inverted or out-of-phase signal charge at these frequencies from the first and second inputs to provide a combed chrominance signal charge component.
摘要翻译：一种梳状滤波器，包括电荷转移装置（CTD）结构，用于直接在CTD结构内分离复合彩色电视信号的频率交错亮度和色度分量。 CTD结构具有基本相同几何形状的第一和第二对输入部分，第二对的一个输入部分在信号反相器之前。当来自相应输入对的信号电荷彼此组合时，施加到第一和第二输入对的信号电荷被延迟使得来自第一输入对的信号电荷相对于来自第二输入对的信号电荷显示1H延迟。第一电荷求和井将来自第一和第二输入的线扫描频率的倍数处的相互同相信号电荷组合以提供精梳亮度信号电荷分量，而第二阱将相互反相或异相信号电荷组合在来自第一和第二输入的这些频率以提供精梳色度信号电荷分量。

4. 发明授权

US4001861A Double-layer, polysilicon, two-phase, charge coupled device 失效
标题翻译：双层，多晶硅，两相，充电耦合器件
公开(公告)号：US4001861A
公开(公告)日：1977-01-04
申请号：US406052
申请日：1973-10-12
申请人： James E. Carnes
发明人： James E. Carnes
IPC分类号： H01L29/768 , H01L31/0224 , H01L29/78 , H01L29/04
CPC分类号： H01L31/022408 , H01L29/76875
摘要： In a two-phase, charge-coupled device having alternate rows of internal andverlapping external electrodes, the external electrodes are fabricated from polysilicon instead of aluminum as heretofore, the internal electrodes also being of polysilicon. Sets of corresponding electrodes are then connected to a bus bar at each end, each bus bar for the same set of corresponding electrodes carrying the same phase, or clocking, signal.

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