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1. 发明申请

US20100258758A1 HDD PATTERN APPARATUS USING LASER, E-BEAM, OR FOCUSED ION BEAM 有权
标题翻译：使用激光，电子束或聚焦离子束的硬盘图案设备
公开(公告)号：US20100258758A1
公开(公告)日：2010-10-14
申请号：US12759587
申请日：2010-04-13
申请人： Majeed A. Foad , Stephen Moffatt
发明人： Majeed A. Foad , Stephen Moffatt
IPC分类号： G03F7/20 , G03B27/42 , H01F1/00
CPC分类号： G03B27/42 , G11B5/8404 , H01F10/187 , H01F41/34
摘要： A method and apparatus for manufacturing magnetic storage media is provided. A structural substrate is coated with a magnetically active material, and a magnetic pattern is formed in the magnetically active material by treating portions of the material with energy from a laser, e-beam, or focused ion beam. The beam may be divided into a packet of beamlets by passing the beam through a divider, which may be a diffraction grating for laser energy, a thin film single crystal for electrons, or a perforated plate for ions, or the beam may be generated by an array of emitters. The beamlets are then focused to a desired dimension and distribution by optics or electric fields. The resulting beam packet may be shaped further by passing through an aperture of any desired shape. The resulting beam may be applied sequentially to exposure zones to treat an entire substrate or plurality of substrates.
摘要翻译：提供了一种用于制造磁存储介质的方法和装置。用磁性活性材料涂覆结构基材，通过用激光，电子束或聚焦离子束的能量处理材料的部分，在磁性活性材料中形成磁性图案。通过将光束通过分隔器（可以是用于激光能量的衍射光栅），用于电子的薄膜单晶或用于离子的多孔板，可以将光束分成束分束，或者可以通过一组发射器。然后通过光学或电场将子束聚焦到期望的尺寸和分布。所得到的束束可以进一步通过穿过任何所需形状的孔。所得到的光束可以顺序施加到曝光区域以处理整个基板或多个基板。

2. 发明授权

US07443635B2 Magnetic detector including antiferromagnetic layer, amorphous barrier layer, base layer, and hard layer arranged in that order and method for manufacturing magnetic detector 失效
标题翻译：磁性检测器，包括反铁磁性层，非晶形阻挡层，基层，以及按顺序布置的硬质层以及用于制造磁检测器的方法
公开(公告)号：US07443635B2
公开(公告)日：2008-10-28
申请号：US11249751
申请日：2005-10-04
申请人： Kenichi Tanaka , Eiji Umetsu , Masahiro Oshima , Naoya Hasegawa
发明人： Kenichi Tanaka , Eiji Umetsu , Masahiro Oshima , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： H01F10/3277 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3932 , H01F10/187 , H01F41/308 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048
摘要： A multilayer film is placed on a subatrate. The multilayer film includes an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic material layer, and a free magnetic layer. The multilayer film has recessed sections arranged in both side regions thereof, the recessed sections being formed by partly removing the multilayer film in a vacuum. The bottoms of the recessed sections are located between the upper face and lower face of the antiferromagnetic layer. Amorphous barrier layers with a thickness of Å are placed on the bottoms of the recessed sections, the amorphous barrier layers being formed in the same vacuum as that for forming the recessed sections sequentially to the step of forming the recessed sections.
摘要翻译：将多层膜放置在分层上。多层膜包括反铁磁层，钉扎磁性层，非磁性材料层和自由磁性层。多层膜具有布置在其两侧区域中的凹部，凹部通过在真空中部分去除多层膜而形成。凹陷部分的底部位于反铁磁层的上表面和下表面之间。厚度为10〜32的无定形阻挡层被放置在凹部的底部，与形成凹部的工序相同地形成与用于形成凹部的非晶形阻挡层相同的真空。

3. 发明申请

US20080204943A1 Magnetoresistive element, magnetic memory, magnetic head, and magnetic recording/reproducing device 有权
标题翻译：磁阻元件，磁存储器，磁头和磁记录/再现装置
公开(公告)号：US20080204943A1
公开(公告)日：2008-08-28
申请号：US11902657
申请日：2007-09-24
申请人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
发明人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
IPC分类号： G11B5/33
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11C11/161 , H01F10/187 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , Y10T428/1121
摘要： A magnetoresistive element includes: a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer provided between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer and the second magnetic layer has a magnetic compound that is expressed by M1aM2bXc (where 5≦a≦68, 10≦b≦73, and 22≦c≦85) M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, Cr, and Mn. X is at least one element selected from the group consisting of N, O, and C.
摘要翻译：磁阻元件包括：其磁化方向基本上朝向一个方向固定的第一磁性层; 其磁化方向响应于外部磁场而改变的第二磁性层; 以及设置在第一磁性层和第二磁性层之间的间隔层。第一磁性层和第二磁性层中的至少一个具有由M 1 aM 2 bXc（其中5≤a≤68,10≤b≤73且22 <= c < = 85）M 1是选自Co，Fe和Ni中的至少一种元素。 M 2是选自Ti，V，Cr和Mn中的至少一种元素。 X是选自N，O和C中的至少一种元素。

4. 发明授权

US5772797A Soft magnetic thin film, method for preparing same and magnetic head 失效
标题翻译：软磁薄膜，制备方法及磁头
公开(公告)号：US5772797A
公开(公告)日：1998-06-30
申请号：US775518
申请日：1997-01-02
申请人： Kanji Nakanishi , Osamu Shimizu , Satoshi Yoshida , Masaaki Katayama , Tatsuya Isomura
发明人： Kanji Nakanishi , Osamu Shimizu , Satoshi Yoshida , Masaaki Katayama , Tatsuya Isomura
IPC分类号： G11B5/147 , G11B5/187 , G11B5/21 , G11B5/31 , H01F1/153 , H01F10/13 , H01F10/14 , H01F10/187 , H01F1/147
CPC分类号： G11B5/21 , G11B5/147 , G11B5/1878 , G11B5/31 , G11B5/313 , G11B5/3186 , H01F1/15308 , H01F10/131 , H01F10/147 , H01F10/187 , G11B5/3109 , H01F10/265
摘要： A soft magnetic thin micro-crystalline film of FeT.sub.b N.sub.c (at %) wherein T is at least one of Zr, Hf, Ti, Nb, Ta, V, Mo and W, and 0
摘要翻译： FeTbNc（at％）的软磁性薄的微晶薄膜，其中T是Zr，Hf，Ti，Nb，Ta，V，Mo和W中的至少一种，0

5. 发明授权

US5736240A Amorphous rare earth oxides 失效
标题翻译：无定形稀土氧化物
公开(公告)号：US5736240A
公开(公告)日：1998-04-07
申请号：US550570
申请日：1995-10-31
申请人： Michael B. Hintz
发明人： Michael B. Hintz
IPC分类号： C01F17/00 , G11B11/10 , G11B11/105 , H01F10/18 , H01F10/187 , H01F41/32 , H01F41/34 , G11B5/66
CPC分类号： C01F17/0043 , G11B11/10584 , G11B11/10586 , G11B11/10589 , H01F10/187 , H01F10/265 , C01P2002/02 , C01P2002/72 , C01P2002/77 , C01P2006/42 , Y10S428/90 , Y10T428/26 , Y10T428/265
摘要： A stable amorphous rare earth oxide, such as Y.sub.2 O.sub.3, including a stabilizer, such as carbon, silicon carbide, or hafnium oxide. The stable amorphous rare earth oxide can be used in a dielectric layer in a magneto-optical recording medium.
摘要翻译：稳定的无定形稀土氧化物，例如Y 2 O 3，包括稳定剂，例如碳，碳化硅或氧化铪。稳定的无定形稀土氧化物可用于磁光记录介质中的电介质层。

6. 发明授权

US08431911B2 HDD pattern apparatus using laser, E-beam, or focused ion beam 有权
标题翻译：使用激光，电子束或聚焦离子束的HDD图案设备
公开(公告)号：US08431911B2
公开(公告)日：2013-04-30
申请号：US12759587
申请日：2010-04-13
申请人： Majeed A. Foad , Stephen Moffatt
发明人： Majeed A. Foad , Stephen Moffatt
IPC分类号： A61B6/00 , G01N21/64 , G11B5/02 , G11B21/02 , G11B11/00 , G03G13/00 , G03G19/00
CPC分类号： G03B27/42 , G11B5/8404 , H01F10/187 , H01F41/34
摘要： A method and apparatus for manufacturing magnetic storage media is provided. A structural substrate is coated with a magnetically active material, and a magnetic pattern is formed in the magnetically active material by treating portions of the material with energy from a laser, e-beam, or focused ion beam. The beam may be divided into a packet of beamlets by passing the beam through a divider, which may be a diffraction grating for laser energy, a thin film single crystal for electrons, or a perforated plate for ions, or the beam may be generated by an array of emitters. The beamlets are then focused to a desired dimension and distribution by optics or electric fields. The resulting beam packet may be shaped further by passing through an aperture of any desired shape. The resulting beam may be applied sequentially to exposure zones to treat an entire substrate or plurality of substrates.
摘要翻译：提供了一种用于制造磁存储介质的方法和装置。用磁性活性材料涂覆结构基材，通过用激光，电子束或聚焦离子束的能量处理材料的部分，在磁性活性材料中形成磁性图案。通过将光束通过分隔器（可以是用于激光能量的衍射光栅），用于电子的薄膜单晶或用于离子的多孔板，光束可以被分成小束束，或者可以通过一组发射器。然后通过光学或电场将子束聚焦到期望的尺寸和分布。所得到的束束可以进一步通过穿过任何所需形状的孔。所得到的光束可以顺序施加到曝光区域以处理整个基板或多个基板。

7. 发明申请

US20120206838A1 MAGNETORESISTIVE ELEMENT HAVING A MAGNETIC COMPOUND, MAGNETIC MEMORY, MAGNETIC HEAD, AND A MAGNETIC RECORDING/REPRODUCING DEVICE 有权
标题翻译：具有磁性化合物，磁记录，磁头和磁记录/再现装置的磁元件
公开(公告)号：US20120206838A1
公开(公告)日：2012-08-16
申请号：US13454846
申请日：2012-04-24
申请人： Yoshihiko FUJI , Hideaki FUKUZAWA , Hiromi YUASA
发明人： Yoshihiko FUJI , Hideaki FUKUZAWA , Hiromi YUASA
IPC分类号： G11B5/39 , G11C11/16
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11C11/161 , H01F10/187 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , Y10T428/1121
摘要： An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer. At least one of the first magnetic layer and the second magnetic layer includes a magnetic compound layer including a magnetic compound that is expressed by M1aM2bOc (where 5≦a≦68, 10≦b≦73, and 22≦c≦85). M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, and Cr.
摘要翻译：示例性磁阻元件包括其磁化方向基本上朝向一个方向固定的第一磁性层; 其磁化方向响应于外部磁场而改变的第二磁性层; 和间隔层。第一磁性层和第二磁性层中的至少一个包括由M1aM2bOc（其中5和nlE; a＆nlE; 68,10和nlE; b＆nlE; 73和22＆nlE; c＆nlE; 85）表示的磁性化合物的磁性化合物层。 M1是选自Co，Fe和Ni中的至少一种元素。 M2是选自Ti，V和Cr中的至少一种元素。

8. 发明授权

US08184410B2 Magnetoresistive element having free layer magnetic compound expressed by M1M2O 有权
标题翻译：具有由M1M2O表示的自由层磁性化合物的磁阻元件
公开(公告)号：US08184410B2
公开(公告)日：2012-05-22
申请号：US11902657
申请日：2007-09-24
申请人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
发明人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
IPC分类号： G11B5/39 , G11C11/16
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11C11/161 , H01F10/187 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , Y10T428/1121
摘要： An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer provided between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer and the second magnetic layer has a magnetic compound that is expressed by M1aM2bXc(where 5≦a≦68, 10≦b≦73, and 22≦c≦85). M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, Cr, and Mn. X is at least one element selected from the group consisting of N, O, and C.
摘要翻译：示例性磁阻元件包括其磁化方向基本上朝向一个方向固定的第一磁性层; 其磁化方向响应于外部磁场而改变的第二磁性层; 以及设置在第一磁性层和第二磁性层之间的间隔层。第一磁性层和第二磁性层中的至少一个具有由M1aM2bXc（其中5＆nlE; a＆nlE; 68,10＆amp; nlE; b＆nlE; 73和22＆nlE; c＆nlE; 85）表示的磁性化合物。 M1是选自Co，Fe和Ni中的至少一种元素。 M2是选自Ti，V，Cr和Mn中的至少一种元素。 X是选自N，O和C中的至少一种元素。

9. 发明授权

US4080478A Method for producing an InSb thin film 失效
标题翻译：制造InSb薄膜的方法
公开(公告)号：US4080478A
公开(公告)日：1978-03-21
申请号：US603529
申请日：1975-08-11
申请人： Naoki Yamamoto , Tetsu Oi , Kikuji Sato
发明人： Naoki Yamamoto , Tetsu Oi , Kikuji Sato
IPC分类号： H01L43/12 , C30B13/00 , C30B19/00 , H01F10/187 , H01F41/14 , H01L43/14 , H01F10/02
CPC分类号： C30B29/40 , C30B13/00 , C30B19/00 , H01F10/187 , H01F41/14 , H01L43/14
摘要： A method for producing a unique InSb thin film element which comprises the steps of forming a thin film of InSb polycrystal on a substrate of insulating material, forming an oxide film on the InSb thin film, zone-melting the InSb thin film by heating the thin film covered with the oxide film to a temperature above the melting point of InSb in a controlled gaseous heat-treating atmosphere comprising an inert gas containing from 1 ppm to 3 .times. 10.sup.4 ppm of oxygen, which is replaceable by an addition of a tenfold amount of aqueous vapor to the extent of 10.sup.2 ppm of oxygen, and cooling the resultant element. An InSb thin film element produced in this way is suitable as a material for a magnetosensitive element of good performance, especially a low noise level or a high S/N ratio.
摘要翻译：一种制造独特的InSb薄膜元件的方法，包括以下步骤：在绝缘材料的衬底上形成InSb多晶薄膜，在InSb薄膜上形成氧化膜，通过加热薄片在含有1ppm至3×104ppm氧气的惰性气体的受控气体热处理气氛中，氧化膜覆盖的温度高于InSb熔点的温度，该惰性气体可以通过加入十倍量的水蒸汽至102ppm的氧气，并冷却所得元件。以这种方式制造的InSb薄膜元件适用于具有良好性能，特别是低噪声水平或高S / N比的磁敏元件的材料。

10. 发明授权

US3943570A Semiconductor magnetic head 失效
标题翻译：半导体磁头
公开(公告)号：US3943570A
公开(公告)日：1976-03-09
申请号：US505972
申请日：1974-09-13
申请人： Naoki Yamamoto , Kikuji Sato , Tetsu Oi
发明人： Naoki Yamamoto , Kikuji Sato , Tetsu Oi
IPC分类号： G11B5/37 , G11B5/39 , H01F10/187 , G11B5/38 , G01R33/02
CPC分类号： G11B5/3993 , G11B5/376 , H01F10/187
摘要： A semiconductor magnetic head in which a polycrystal thin film of a semiconductor material containing at least a crystal particle having a longitudinal diameter of at least 30 .mu.m is employed as a magneto-sensitive element is disclosed. The semiconductor thin film containing the crystal particle of the longitudinal diameter at least 30 .mu.m can be easily formed with a good reproducibility by evaporating the semiconductor material on an insulation film containing not less than 3 mol % of alumina and then being subjected to a zone melting treatment.
摘要翻译：公开了一种半导体磁头，其中至少含有具有至少30μm的纵向直径的晶体的半导体材料的多晶薄膜被用作磁敏元件。含有至少30μm的纵向直径的晶体颗粒的半导体薄膜可以通过在含有不少于3mol％的氧化铝的绝缘膜上蒸发半导体材料然后经受一个区域而容易地形成具有良好的再现性熔化处理。

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