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    • 8. 发明授权
    • PTC element and process for producing the same
    • PTC元件及其制造方法
    • US5817423A
    • 1998-10-06
    • US607636
    • 1996-02-27
    • Hiroshi KajimaruKeiichi AsamiYoshiaki IwayaYoshiaki EchigoAkira Ito
    • Hiroshi KajimaruKeiichi AsamiYoshiaki IwayaYoshiaki EchigoAkira Ito
    • H01C7/02H01C17/065B32B15/08B29C65/00B30B11/00H01C7/00
    • H01C7/027H01C17/06573Y10T428/31678Y10T428/31692Y10T428/31855
    • A PTC element comprising a conductive sheet of a crystalline polyolefin matrix and a conductive filler, having provided on both sides thereof an electrode of a metallic foil, the PTC element having a resistivity at 20.degree. C. (.rho..sub.20) of not more than 1.8 .OMEGA..multidot.cm, a peak resistivity (.rho..sub.p) of not less than 2.0.times.10.sup.6 .OMEGA..multidot.cm, and a temperature difference �T.sub.a (0.degree.C.)-T.sub.b (.degree.C.)! of not greater than 10.degree. C., wherein T.sub.a (.degree.C.) is a temperature at which the resistivity is 10.sup.6 times the resistivity at 20.degree. C. (.rho..sub.20) and T.sub.b (.degree.C.) is a temperature at which the resistivity is 10 times the resistivity at 20.degree. C. (.rho..sub.20). The PTC element is produced by a process comprising mixing a crystalline polyolefin and a conductive filler, molding the mixture into a conductive sheet, press bonding under heat a metallic foil to both sides of the conductive sheet, and repeatedly subjecting the conductive sheet to a heating and cooling cycle consisting of heating at a temperature of not lower than (the melting point of the crystalline polyolefin minus 5.degree. C.) and then cooling to a temperature lower than (the melting point of the crystalline polyolefin minus 5.degree. C.). The PTC elements exhibit an extremely low resistivity at 20.degree. C. and a high resistivity at a peak temperature, showing a very steep increase in resistance in a narrow temperature range.
    • 一种PTC元件,包括结晶聚烯烃基质和导电填料的导电片,其两侧均设有金属箔的电极,PTC元件的电阻率在20℃(rho 20)不大于1.8 OMEGA xcm,峰值电阻率(rho p)不小于2.0×10 6欧姆×xcm,温度差[Ta(0℃)-Tb(℃)]为10℃以下,其中Ta (℃)是电阻率为20℃时电阻率的106倍的温度(rho 20),Tb(℃)是电阻率为20℃电阻率10倍的温度。 (rho 20)。 PTC元件通过包括混合结晶聚烯烃和导电填料的方法制备,将该混合物成型为导电片,在导热片的两侧将金属箔加热压接,并重复地对导电片进行加热 和冷却循环由不低于(结晶聚烯烃的熔点减去5℃)的温度加热,然后冷却到低于(结晶聚烯烃的熔点减去5℃)的温度。 PTC元件在20℃下表现出非常低的电阻率,在峰值温度下表现出高电阻率,表现出在窄温度范围内电阻非常陡峭的增加。