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1. 发明申请

US20170217755A1 PRESSURE SENSOR, MANUFACTURING METHOD OF PRESSURE SENSOR, ALTIMETER, ELECTRONIC APPARATUS, AND MOVING OBJECT 有权
公开(公告)号：US20170217755A1
公开(公告)日：2017-08-03
申请号：US15417674
申请日：2017-01-27
申请人： Seiko Epson Corporation
发明人： Yusuke MATSUZAWA , Takuya KINUGAWA
IPC分类号： B81B3/00 , G01C5/06 , G01L9/00 , B81C1/00
CPC分类号： B81B3/001 , B81B2201/0264 , B81B2207/015 , B81C2203/0728 , G01C5/06 , G01L9/0054
摘要： A pressure sensor has a substrate having a diaphragm, a cavity portion that is positioned on one side of the diaphragm, and a ceiling portion that is disposed opposite to the diaphragm via the cavity portion, and unevenness is formed on a surface of the substrate facing the cavity portion. In addition, the unevenness has a plurality of recessed portions.

2. 发明授权

US09278850B2 MEMS device and method of manufacturing the same 有权
标题翻译： MEMS器件及其制造方法
公开(公告)号：US09278850B2
公开(公告)日：2016-03-08
申请号：US14642031
申请日：2015-03-09
申请人： SEIKO EPSON CORPORATION
发明人： Takahiko Yoshizawa
IPC分类号： H01L27/14 , B81B7/00 , B81C1/00
CPC分类号： B81B7/007 , B81B2207/092 , B81B2207/095 , B81C1/00246 , B81C1/00301 , B81C2203/0728 , B81C2203/0764 , H01L2224/24145
摘要： A present MEMS device includes: a semiconductor substrate in which a trench is formed; a functional element that is provided in the trench of the semiconductor substrate and includes a connection electrode; a structural member that forms a cavity surrounding the functional element; a lid portion that includes a conductive member electrically connected to the connection electrode and covers the cavity; an insulating layer that covers the main surface of the semiconductor substrate provided with the lid portion and a semiconductor circuit element; a first electrode that penetrates the insulating layer and is electrically connected to the conductive member; a second electrode that penetrates the insulating layer and is electrically connected to the semiconductor circuit element; and wiring that is provided on a surface of the insulating layer and brings the first electrode and the second electrode into electrical connection to each other.
摘要翻译：本MEMS装置包括：形成沟槽的半导体衬底; 设置在所述半导体衬底的沟槽中并包括连接电极的功能元件; 形成围绕所述功能元件的空腔的结构构件; 盖部分，包括电连接到连接电极并覆盖空腔的导电部件; 覆盖设置有盖部的半导体基板的主表面的绝缘层和半导体电路元件; 第一电极，其穿透绝缘层并电连接到导电构件; 穿过绝缘层并与半导体电路元件电连接的第二电极; 以及设置在绝缘层的表面上并使第一电极和第二电极彼此电连接的布线。

3. 发明申请

US20150192486A1 PRESSURE SENSOR HAVING A BOSSED DIAPHRAGM 有权
标题翻译：压力传感器
公开(公告)号：US20150192486A1
公开(公告)日：2015-07-09
申请号：US14543074
申请日：2014-11-17
申请人： Honeywell International Inc.
发明人： Carl Stewart , Richard Davis , Gilberto Morales
IPC分类号： G01L9/00 , B81B3/00 , B81C1/00 , G01L7/08
CPC分类号： B81C1/00158 , B81B3/0021 , B81B3/007 , B81B2201/0264 , B81B2203/0127 , B81C2201/014 , B81C2201/0198 , B81C2203/0728 , G01L7/08 , G01L9/0042 , G01L9/0044 , G01L9/0047 , G01L9/0054 , G01L9/0055
摘要： A pressure sensor having a diaphragm having a boss with a pattern. The diaphragm having a boss may be regarded as a bossed diaphragm. The bossed diaphragm may have higher sensitivity than a flat plate diaphragm having the same area as the bossed diaphragm. The bossed diaphragm may incorporate a simple cross pattern that can further improve the sensitivity and linearity of a pressure response of the diaphragm at low pressures. Reduction of sharp edges and corners of the boss and its legs around the periphery of the diaphragm may reduce high stress points and thus increase the burst pressure rating of the bossed diaphragm.
摘要翻译：一种压力传感器，具有具有带图案的凸台的隔膜。具有凸台的隔膜可以被认为是凸起的隔膜。凸起的隔膜可能具有比具有与凸起隔膜相同面积的平板隔膜更高的灵敏度。凸起的隔膜可以包括简单的交叉图案，其可以进一步提高隔膜在低压下的压力响应的灵敏度和线性。凸起及其围绕隔膜周边的腿的尖锐边缘和拐角的减小可能会降低高应力点，从而提高凸起隔膜的爆破压力等级。

4. 发明授权

US08319312B2 Devices for fabricating tri-layer beams 有权
标题翻译：用于制造三层梁的装置
公开(公告)号：US08319312B2
公开(公告)日：2012-11-27
申请号：US12178554
申请日：2008-07-23
申请人： Arthur S. Morris, III , Dana DeReus , Shawn J. Cunningham
发明人： Arthur S. Morris, III , Dana DeReus , Shawn J. Cunningham
IPC分类号： H01L29/00
CPC分类号： B81C1/00095 , B81B3/0072 , B81C2203/0728 , B81C2203/0771
摘要： Methods and devices for fabricating tri-layer beams are provided. In particular, disclosed are methods and structures that can be used for fabricating multilayer structures through the deposition and patterning of at least an insulation layer, a first metal layer, a beam oxide layer, a second metal layer, and an insulation balance layer.
摘要翻译：提供了用于制造三层梁的方法和装置。特别地，公开了可以通过至少绝缘层，第一金属层，光束氧化物层，第二金属层和绝缘平衡层的沉积和图案化来用于制造多层结构的方法和结构。

5. 发明授权

US07935556B2 Microelectromechanical system and process of making the same 有权
标题翻译：微机电系统及其制造过程
公开(公告)号：US07935556B2
公开(公告)日：2011-05-03
申请号：US11845780
申请日：2007-08-27
申请人： Li-Ken Yeh , I-Hsiang Chiu
发明人： Li-Ken Yeh , I-Hsiang Chiu
IPC分类号： H01L21/00
CPC分类号： B81C1/00246 , B81C2203/0728
摘要： A micro electromechanical system and a fabrication method thereof, which has trenches formed on a substrate to prevent circuits from interfering each other, and to prevent over-etching of the substrate when releasing a microstructure.
摘要翻译：一种微机电系统及其制造方法，其具有形成在基板上的沟槽，以防止电路彼此干扰，并且在释放微结构时防止基板过度蚀刻。

6. 发明授权

US07863069B2 Method of forming an integrated MEMS resonator 有权
标题翻译：形成集成MEMS谐振器的方法
公开(公告)号：US07863069B2
公开(公告)日：2011-01-04
申请号：US11535698
申请日：2006-09-27
申请人： Jason W. Weigold
发明人： Jason W. Weigold
IPC分类号： H01L21/00
CPC分类号： B81C1/00246 , B81B2201/0271 , B81C2203/0728 , H03H3/0073 , H03H9/2431 , H03H2009/02354 , H03H2009/02503
摘要： A method of producing an integrated MEMS resonator includes providing a substrate including single crystal silicon and partially forming a resonator in a first portion of the substrate, the resonator having a resonating element formed by the substrate and an electrode, the resonating element and the electrode forming a variable capacitor. The method also includes forming circuitry in a second portion of the substrate, the circuitry configured for detecting capacitance of the variable capacitor and finish forming the resonator and integrating the resonator with the circuitry so that the electrode is in communication with the circuitry.
摘要翻译：一种制造集成MEMS谐振器的方法包括提供包括单晶硅的衬底并在衬底的第一部分中部分地形成谐振器，所述谐振器具有由衬底和电极形成的谐振元件，谐振元件和形成电极的电极一个可变电容器。该方法还包括在衬底的第二部分中形成电路，所述电路被配置用于检测可变电容器的电容并完成形成谐振器并且将谐振器与电路集成，使得电极与电路连通。

7. 发明申请

US20090057817A1 Microelectromechanical System and Process of Making the Same 有权
标题翻译：微机电系统及其制造过程
公开(公告)号：US20090057817A1
公开(公告)日：2009-03-05
申请号：US11845780
申请日：2007-08-27
申请人： Li-Ken YEH , I-Hsiang CHIU
发明人： Li-Ken YEH , I-Hsiang CHIU
IPC分类号： H01L29/00 , H01L21/311
CPC分类号： B81C1/00246 , B81C2203/0728
摘要： A micro electromechanical system and a fabrication method thereof, which has trenches formed on a substrate to prevent circuits from interfering each other, and to prevent over-etching of the substrate when releasing a microstructure.
摘要翻译：一种微机电系统及其制造方法，其具有形成在基板上的沟槽，以防止电路彼此干扰，并且在释放微结构时防止基板过度蚀刻。

8. 发明授权

US07258012B2 Integrated monolithic tri-axial micromachined accelerometer 有权
标题翻译：集成单片三轴微加工加速度计
公开(公告)号：US07258012B2
公开(公告)日：2007-08-21
申请号：US11363293
申请日：2006-02-21
申请人： Huikai Xie
发明人： Huikai Xie
IPC分类号： G01P15/125
CPC分类号： H03H9/02338 , B81B3/0062 , B81B2201/0235 , B81C1/00246 , B81C2203/0728 , G01P15/0802 , G01P15/125 , G01P15/18 , G01P2015/082
摘要： A monolithic integrated 3-axis accelerometer chip includes a single crystal substrate, the substrate including at least one single crystal membrane layer portion. A single sensor microstructure made from the single crystal membrane senses acceleration in each of the three orthogonal directions. At least one electronic circuit can also be disposed on the chip, such as a circuit for driving, detecting, controlling and signal processing.
摘要翻译：单片集成3轴加速度计芯片包括单晶衬底，该衬底包括至少一个单晶膜层部分。由单晶膜制成的单个传感器微结构感测三个正交方向中的每一个的加速度。至少一个电子电路也可以设置在芯片上，例如用于驱动，检测，控制和信号处理的电路。

9. 发明授权

US06518084B1 Method of producing a micromechanical structure for a micro-electromechanical element 失效
标题翻译：微机电元件的微机械结构的制造方法
公开(公告)号：US06518084B1
公开(公告)日：2003-02-11
申请号：US09868402
申请日：2001-09-12
申请人： Stefan Seitz , Leonhard Hoefter , Juergen Kruckow , Karl Neumeier , Dieter Bollmann
发明人： Stefan Seitz , Leonhard Hoefter , Juergen Kruckow , Karl Neumeier , Dieter Bollmann
IPC分类号： H01L2100
CPC分类号： G01P15/0802 , B81B2203/0127 , B81C1/00246 , B81C2201/019 , B81C2203/0728 , G01L9/0042 , G01L9/0073
摘要： In a method of producing a micromechanical structure for a micro-electromechanical element, a first intermediate layer, which is applied to a first main surface of a first semiconductor wafer, is structured in a first step so as to produce a recess. The first semiconductor wafer is then connected via the first intermediate layer to a second semiconductor wafer in such a way that a hermetically sealed cavity is defined by the recess. Finally, one of the wafers is thinned from a surface facing away from said first intermediate layer so as to produce a diaphragm-like structure on top of the cavity. At least one further intermediate layer is provided between the two semiconductor wavers which, prior to the connection of the two semiconductor wafers, is structured in such a way that the structure formed in said at least one further intermediate layer and the recess in said first intermediate layer define the cavity.
摘要翻译：在制造微电子机电元件的微机械结构的方法中，施加到第一半导体晶片的第一主表面的第一中间层被构造成第一步骤以产生凹陷。然后将第一半导体晶片经由第一中间层连接到第二半导体晶片，使得由凹部限定气密密封腔。最后，其中一个晶片从背离所述第一中间层的表面变薄，从而在空腔的顶部产生隔膜状结构。在两个半导体波幅之间提供至少一个另外的中间层，其在两个半导体晶片的连接之前被构造成使得在所述至少一个另外的中间层中形成的结构和所述第一中间层层定义空腔。

10. 发明授权

US5814554A Semiconductor device provided with a microcomponent having a fixed and a movable electrode 失效
标题翻译：设置有具有固定和可动电极的微元件的半导体器件
公开(公告)号：US5814554A
公开(公告)日：1998-09-29
申请号：US561573
申请日：1995-11-21
申请人： Mark A. De Samber , Wilhelmus Peters
发明人： Mark A. De Samber , Wilhelmus Peters
IPC分类号： G01L1/18 , B81B3/00 , G01P15/08 , G01P15/125 , G01P15/135 , H01L21/283 , H01L21/302 , H01L21/311 , H01L29/84 , H01L21/44
CPC分类号： B81C1/00246 , G01P15/0802 , G01P15/135 , B81B2201/0235 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C2203/0728
摘要： A method of manufacturing a semiconductor device is disclosed in which semiconductor switching elements (2) and an integrated microcomponent (3) with a fixed electrode (6) and an electrode (7) which is movable relative to the fixed electrode (6) are provided adjacent a surface of a semiconductor slice (1), which slice (1) is subsequently subdivided into individual semiconductor devices. After the semiconductor switching elements (2) have been provided, metal conductor tracks (20) of a first level are provided on the surface which form the fixed electrode (6) and electrical connections (9), over which an insulating layer (21) and metal conductor tracks (22) of a second level are provided, which form the movable electrode (7) and further electrical connections (8), after which the insulating layer (21) between the fixed (6) and the movable electrode (7) is removed. The semiconductor switching elements (2) are thus manufactured first, after which during the application of the metallization of the device the microcomponent (3) is also manufactured. Since the electrodes (6, 7) of the microcomponent are manufactured by means of conductor tracks (20, 22) at the two metallization levels, it suffices to adapt the metallization stage ("back end") of the manufacturing process only for the creation of a microcomponent (3). A standard process may accordingly be taken for the manufacture of the semiconductor elements (2). The manufacture of the device thereby becomes simpler and cheaper.
摘要翻译：公开了一种制造半导体器件的方法，其中设置有可相对于固定电极（6）移动的具有固定电极（6）和电极（7）的半导体开关元件（2）和集成微型组件（3）邻近半导体薄片（1）的表面，该切片（1）随后被细分为各个半导体器件。在设置了半导体开关元件（2）之后，在形成固定电极（6）的表面和电连接（9）上设置第一电平的金属导体轨道（20），绝缘层（21），并且设置有第二级的金属导体轨道（22），其形成可动电极（7）和另外的电连接（8），此后，固定（6）和可动电极（7）之间的绝缘层（21））被删除。因此首先制造半导体开关元件（2），之后在器件的金属化应用期间也制造微组件（3）。由于微组件的电极（6,7）通过在两个金属化层级的导体轨道（20,22）制造，所以只需要使制造过程的金属化阶段（“后端”）适应于创建的微量组件（3）。因此可以采用标准工艺来制造半导体元件（2）。因此，该装置的制造变得更加简单和便宜。

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